P-orbital spin generator with large spin Hall angle and long spin diffusion length
High density data storage and spin-logic devices require highly efficient all-electric control of spin moments. So far, charge-to-spin conversion through the spin Hall effect (SHE) highly limits to d-orbital materials associated with strong spin-orbit coupling (SOC), especially heavy metals. However, d-orbital heavy metals with strong SOC results in a short spin diffusion length, which restricts the spin transport and accumulation in spintronic devices. Therefore, it is urgent to discovery new SHE materials with both large spin Hall conductivity and high spin transport ability beyond d-orbital materials. Here, we experimentally report a large charge to spin conversion in a p-orbital In2Bi alloy, exhibiting the coexistence of a large spin Hall angle and a long spin diffusion length (4 times that of Pt). Our first-principles calculations reveal that small gap openings near the Fermi level lead to large Berry curvature-related spin Hall conductivity. Due to the delocalized nature of p-orbitals of In2Bi, its spin current can overcome the physical barriers between spin Hall angle and spin diffusion length in d-orbital metals, thereby advancing the development of high performance spintronic devices.