arXiv subjects

Xiaoli Lu

Publications and source records attributed to Xiaoli Lu.

4 recordsLinked to original sources

arXiv2026

Drift-free characterization of electro-optic tuning efficiency in lithium niobate photonic nanocavities

Lithium niobate photonic crystal nanobeam cavity (PCNBC) represents a premier platform for integrated electro-optics, offering deep sub-wavelength mode confinement, enhanced light-matter interactions, and ultralow power consumption. However, accurate characterization of the electro-optic (EO) tuning efficiency in such high-Q devices is fundamentally impeded by DC drift, a time-dependent spectral instability arising from charge redistribution, surface screening, or buffer layer relaxation under sustained electric fields. Here, we report the systematic analysis of DC drift dynamics in lithium niobate nanocavities and demonstrate that conventional quasi-static DC voltage scanning yields highly unreliable characterization data. To circumvent this limitation, we introduce a drift-free, dynamic measurement methodology that employs high-frequency triangular-wave voltage sweeps to effectively decouple the instantaneous electronic Pockels response from slow charge-relaxation processes. Validated across 35 devices with varying electrode geometries, our method delivers reproducible tuning efficiency of 4.3-4.5 pm/V with a low coefficient of variation of 1.1%, showing excellent quantitative agreement with three-dimensional finite-element simulations. This robust, drift-free measurement technique establishes a rigorous standard for the characterization and optimization of resonant cavity electro-optics, accelerating the development of high-performance thin-film lithium niobate photonic integrated circuits.

physics.optics↗

arXiv2024

In-situ tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas

Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to produce extremely large electrical anisotropy via grating gating of a semiconductor two-dimensional electron gas (2DEG) of AlGaN/GaN. We show that periodically modulated electric potential in the 2DEG induces in-plane electrical anisotropy, which is significantly enhanced in a magnetic field, leading to an ultra large electrical anisotropy. This is induced by a giant positive magnetoresistance and a giant negative magnetoresistance under two orthogonally oriented in-plane current flows, respectively. This giant electrical anisotropy is in-situ tunable by tailoring both the grating gate voltage and the magnetic field. Our semiconductor device with controllable giant electrical anisotropy will stimulate new device applications, such as multi-terminal memtransistors and bionic synapses.

cond-mat.mes-hall↗

arXiv2013

Standard form of the scattering matrix for time reversal symmetric system

In this paper, we present the standard form of the scattering matrix of mesocopic system with spin-orbital coupling which preserves time reversal symmetry. We found some analytical structure of the scattering matrix related to the sub-matrices between arbitrary two channels. In particular, we proved that in the two-terminal mono-channel scattering problem, the transmission matrix is proportional to a SU(2) matrix. We obtained these properties through direct and elementary way and found it in agreement with polar decomposition known before.

cond-mat.mes-hall↗

arXiv2010

S-wave superconductivity with orbital dependent sign change in the checkerboard models of iron-based superconductors

We study three different multi-orbital models for iron-based superconductors (iron-SCs) in the solvable limit of weakly coupled square plaquettes. The strongest superconducting (SC) pairing is in the $A_{1g}$ $s$-wave channel and its development is correlated with the emergence of the next-nearest-neighbour antiferromagnetism (NNN-AFM). For the models with more than three orbitals, this study suggests that the signs of the intra-orbital pairing order parameters of the $d_{xy}$ and the $d_{xz}$ (or $d_{yz}$) orbitals must be {\it opposite}. Such sign difference stems from the intrinsic symmetry properties of inter-orbital hoppings and might, ultimately, lead to the sign-change of the SC orders between the hole Fermi pockets at the $Γ$ point and produce anisotropic or even gapless SC gaps in the electron Fermi pockets around the $M$ point in reciprocal space, as restoring back to the homogeneous limit.

cond-mat.supr-con↗