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Xiaolin Wan

Publications and source records attributed to Xiaolin Wan.

4 recordsLinked to original sources

Floquet second-order topological insulator in strained graphene

Graphene provides a canonical setting for Floquet band engineering, where circularly polarized light can dynamically open topological gaps at Dirac points and generate nonequilibrium Hall responses. Here we show that uniaxial strain and off-resonant circularly polarized light with tunable incidence angle enable a controllable route to Floquet higher-order topology in graphene. Using a strained honeycomb tight-binding model with Peierls coupling and a high-frequency expansion for the effective Floquet Hamiltonian, we find that strain drives the Dirac cones toward the Dirac-merging (semi-Dirac) critical regime, where the light-induced mass becomes strongly anisotropic. For oblique incidence, the projected drive is effectively elliptically polarized and, in combination with strain, stabilizes a phase with gapped edges but robust in-gap corner modes in finite geometries, realizing a Floquet second-order topological insulator. We characterize the phase diagram via the Chern number and a crystalline-symmetry-quantized polarization invariant. Finally, first-principles-informed tight-binding calculations corroborate the predicted topological evolution in strained graphene nanostructures. Our results identify driven strained graphene as a realistic and tunable platform for realizing and diagnosing Floquet higher-order topological phases.

cond-mat.mes-hall

Chiral Superconductivity in Periodically Driven Altermagnet/Superconductor Heterostructures

The interplay between magnetism and superconductivity provides a fertile ground for engineering exotic topological phases, while dynamical control via periodic driving offers a unique avenue to access quantum states that are inaccessible in static equilibrium. Here, we propose a strategy to achieve the Floquet chiral topological superconductivity in an altermagnet-superconductor heterostructure driven by elliptically polarized light. We show that for $s$-wave pairing, the system undergoes a transition from a trivial to a chiral topological superconducting phase. More strikingly, with the introduction of mixed $s+d$-wave pairing, we find that the system can access Floquet chiral topological superconducting phases with highly tunable Chern numbers up to N=4. These exotic phases are attributed to the intertwining of altermagnetism, superconducting pairing, and the periodic driving field. Our work establishes the light-driven altermagnetic heterostructure as a versatile platform for exploring and manipulating high-Chern-number chiral topological superconductivity.

cond-mat.supr-con

Higher-Order Band Topology in Twisted Bilayer Kagome Lattice

Topologically protected corner states serve as a key indicator for two-dimensional higher-order topological insulators, yet they have not been experimentally identified in realistic materials. Here, by utilizing the effective tight-binding model and symmetry arguments, we establish a connection between higher-order topological insulators and twisted bilayer kagome lattices. We find that the topologically nontrivial bulk band gap arises in the twisted bilayer kagome lattice system due to twist-induced intervalley scattering, leading to the emergence of higher-order topological insulators with a range of commensurate twist angles, and the higher-order band topology is verified by the second Stiefel-Whitney number and fractionally quantized corner charges. Moreover, we investigate the influence of disorder and charge density wave order on the stability of higher-order topological insulator phases. The results show that the corner states of twisted bilayer kagome lattice systems are robust with respect to disorder and charge density wave. Our work not only provides a feasible approach to realize the readily controllable higher-order topological insulator phases by employing a simple twist technique, but also demonstrates that the twisted bilayer kagome lattice systems exhibit the robustness of higher-order band topology, making it feasible to check above prediction in experiments.

cond-mat.mes-hall

Photoinduced High-Chern-Number Quantum Anomalous Hall Effect from Higher-Order Topological Insulators

Quantum anomalous Hall (QAH) insulators with high Chern number host multiple dissipationless chiral edge channels, which are of fundamental interest and promising for applications in spintronics and quantum computing. However, only a limited number of high-Chern-number QAH insulators have been reported to date. Here, we propose a dynamic approach for achieving high-Chern-number QAH phases in periodically driven two-dimensional higher-order topological insulators (HOTIs).In particular, we consider two representative kinds of HOTIs which are characterized by a quantized quadruple moment and the second Stiefel-Whitney number, respectively. Using the Floquet formalism for periodically driven systems, we demonstrate that QAH insulators with tunable Chern number up to four can be achieved. Moreover, we show by first-principles calculations that the monolayer graphdiyne, a realistic HOTI, is an ideal material candidate. Our work not only establishes a strategy for designing high-Chern-number QAH insulators in periodically driven HOTIs, but also provides a powerful approach to investigate exotic topological states in nonequilibrium cases.

cond-mat.mes-hall