arXiv subjects

Xiaosong Wu

Publications and source records attributed to Xiaosong Wu.

At least 19 recordsLinked to original sources

arXiv2026

Symmetry Origins of the Field-Free Superconducting Diode Effect in the Kagome Superconductor CsV$_3$Sb$_5$

Field-free superconducting diode effects require both inversion-symmetry breaking and an internal time-reversal-symmetry (TRS) breaking field, making them sensitive probes of hidden order in superconductors. In centrosymmetric kagome AV$_3$Sb$_5$, the inversion symmetry generally should generally preclude the observation of the superconducting diode effect. Furthermore, though TRS breaking has been reported in the superconducting regime of CsV$_3$Sb$_5$, whether it is generated by superconductivity or inherited from charge-density-wave (CDW) order remains unresolved. Here we show that pristine CsV$_3$Sb$_5$ devices exhibit no intrinsic field-free superconducting diode effect, whereas surface oxidation or asymmetric etching activates a large nonreciprocal supercurrent. Moreover, the response is stochastic, with sweep-dependent polarity and magnitude, indicating metastable TRS-breaking domain configurations. Small out-of-plane magnetic fields stabilize the superconducting diode response, consistent with field selection of such domains. Finally, when long-range CDW order is suppressed by Ti doping, the SDE disappears. Our results establish the symmetry requirements for the field-free SDE in CsV$_3$Sb$_5$, reveal its stochastic domain-controlled character, and link superconducting-state TRS breaking to CDW-related order.

cond-mat.supr-con↗

arXiv2026

People, IT, and Structuration (PIS): An Integrative Theoretical Framework for Management Information Systems

The Management Information Systems (MIS) discipline has long grappled with how to theorize the complex, mutually constitutive relationships among people, information technology, and organizational structures. Decades of research have produced influential but fragmented theoretical streams from socio-technical systems theory to technology acceptance models, from adaptive structuration theory to sociomateriality, and each illuminating important facets while leaving integrative questions unresolved. This paper proposes the People - IT - Structuration (PIS) framework as a unifying theoretical lens that synthesizes these streams. Drawing on Giddens' structuration theory, we conceptualize People (P), Information Technology (I), and Structure (S) not as independent variables but as mutually constitutive elements engaged in ongoing structuration processes. We trace the intellectual history of MIS theorizing to demonstrate how PIS resolves persistent tensions in the field,e.g. between technological and social determinism, between variance and process approaches, and between micro-level interaction and macro-level institutional dynamics. We develop a set of formal propositions articulating the mechanisms through which P, I, and S co-evolve, and extend the framework to address contemporary phenomena including artificial intelligence, algorithmic management, and human-AI collaboration. The PIS framework offers both a retrospective lens for understanding the discipline's theoretical evolution and a prospective tool for guiding research in the AI era.

cs.HC↗

arXiv2024

Orbital Magneto-Nonlinear Anomalous Hall Effect in Kagome Magnet Fe$_3$Sn$_2$

It has been theoretically predicted that perturbation of the Berry curvature by electromagnetic fields gives rise to intrinsic nonlinear anomalous Hall effects that are independent of scattering. Two types of nonlinear anomalous Hall effects are expected. The electric nonlinear Hall effect has recently begun to receive attention, while very few studies are concerned with the magneto-nonlinear Hall effect. Here, we combine experiment and first-principles calculations to show that the kagome ferromagnet Fe$_3$Sn$_2$ displays such a magneto-nonlinear Hall effect. By systematic field angular and temperature-dependent transport measurements, we unambiguously identify a large anomalous Hall current that is linear in both applied in-plane electric and magnetic fields, utilizing a unique in-plane configuration. We clarify its dominant orbital origin and connect it to the magneto-nonlinear Hall effect. The effect is governed by the intrinsic quantum geometric properties of Bloch electrons. Our results demonstrate the significance of the quantum geometry of electron wave functions from the orbital degree of freedom and open up a new direction in Hall transport effects.

cond-mat.mes-hall↗

arXiv2023

Magnetoresistance signature of two-dimensional electronic states in Co$_3$Sn$_2$S$_2$

Two-dimensional (2D) Dirac bands and flat bands are characteristics of a kagome lattice. However, experimental studies on their electrical transport are few, because three-dimensional (3D) bulk bands of kagome materials, consisting of stacked 2D kagome layers, dominate the transport. We report a magnetoresistance (MR) study of a kagome material, Co$_3$Sn$_2$S$_2$. Based on analysis of the temperature, magnetic field, and field angle dependence of the resistivity, we obtain a complete anatomy of MR. Besides a magnon MR, a chirality-dependent MR, and a chiral-anomaly-induced MR, the most intriguing feature is an orbital MR that scales only with the out-of-plane field, which strongly indicates its 2D nature. We attribute it to the Dirac band of the kagome lattice.

cond-mat.mes-hall↗

arXiv2023

Magnetotransport induced by anomalous Hall effect

In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall angle or the anomalous Hall angle is not small. Using the proper conductivity relation, we reveal an unexpected magnetoresistance (MR) induced by the anomalous Hall effect (AHE). A $B$-linear MR arises and the sign of the slope depends on the sign of the anomalous Hall angle, giving rise to a characteristic bowtie shape. The Hall resistance in a single-band system can exhibit a nonlinearity which is usually considered as a characteristic of a two-band system. A $B$-symmetric component appears in the Hall. These effects reflect the fundamental difference between the ordinary Hall effect and the AHE. Furthermore, we experimentally reproduce the unusual MR and Hall reported before in Co$_3$Sn$_2$S$_2$ and show that these observations can be well explained by the proposed mechanism. MR often observed in quantum anomalous Hall insulators provides further confirmation of the picture. The effect may also account for the large MR observed in non-magnetic three-dimensional topological Dirac semimetals.

cond-mat.mes-hall↗

arXiv2022

Rational design of large anomalous Nernst effect in Dirac semimetals

Anomalous Nernst effect generates a transverse voltage perpendicular to the temperature gradient. It has several advantages compared with the longitudinal thermoelectricity for energy conversion, such as decoupling of electronic and thermal transports, higher flexibility, and simpler lateral structure. However, a design principle beyond specific materials systems for obtaining a large anomalous Nernst conductivity (ANC) is still absent. In this work, we theoretically demonstrate that a pair of Dirac nodes under a Zeeman field manifests a double-peak anomalous Hall conductivity curve with respect to the chemical potential and a compensated carriers feature, leading to an enhanced ANC pinning at the Fermi level compared with that of a simple Weyl semimetal with two Weyl nodes. Based on first-principles calculations, we then provide two Dirac semimetal candidates, i.e., Na3Bi and NaTeAu, and show that under a Zeeman field they exhibit a sizable ANC value of 0.4 A/(m*K) and 1.3 A/(m*K), respectively, near the Fermi level. Our work provides a design principle with a prototype band structure for enhanced ANC pinning at Fermi level, shedding light on the inverse design of other specific functional materials base on electronic structure.

cond-mat.mtrl-sci↗

arXiv2022

Anomalous magneto-thermoelectric behavior in massive Dirac materials

Extensive studies of electron transport in Dirac materials have shown positive magneto-resistance (MR) and positive magneto-thermopower (MTP) in a magnetic field perpendicular to the excitation current or thermal gradient. In contrast, measurements of electron transport often show a negative longitudinal MR and negative MTP for a magnetic field oriented along the excitation current or thermal gradient; this is attributed to the chiral anomaly in Dirac materials. Here, we report a very different magneto-thermoelectric transport behavior in the massive Dirac material ZrTe5. Although thin flakes show a commonly observed positive MR in a perpendicular magnetic field, distinct from other Dirac materials, we observe a sharp negative MTP. In a parallel magnetic field, we still observe a negative longitudinal MR, however, a remarkable positive MTP is observed for the fields parallel to the thermal gradients. Our theoretical calculations suggest that this anomalous magneto-thermoelectric behavior can be attributed to the screened Coulomb scattering. This work demonstrates the significance of impurity scattering in the electron transport of topological materials and provides deep insight into the novel magneto-transport phenomena in Dirac materials.

cond-mat.mtrl-sci↗

arXiv2022

On the Onsager-Casimir reciprocal relations in a tilted Weyl semimetal

The Onsager-Casimir reciprocal relations are a fundamental symmetry of nonequilibrium statistical systems. Here we study an unusual chirality-dependent Hall effect in a tilted Weyl semimetal Co$_3$Sn$_2$S$_2$ with broken time reversal symmetry. It is confirmed that the reciprocal relations are satisfied. Since two Berry curvature effects, an anomalous velocity and a chiral chemical potential, contribute to the observed Hall effect, the reciprocal relations suggest their intriguing connection.

cond-mat.mes-hall↗

arXiv2022

Antisymmetric Seebeck effect in a tilted Weyl semimetal

Tilting the Weyl cone breaks the Lorentz invariance and enriches the Weyl physics. Here, we report the observation of a magnetic-field-antisymmetric Seebeck effect in a tilted Weyl semimetal, Co$_3$Sn$_2$S$_2$. Moreover, it is found that the Seebeck effect and the Nernst effect are antisymmetric in both the in-plane magnetic field and the magnetization. We attribute these exotic effects to the one-dimensional chiral anomaly and phase space correction due to the Berry curvature. The observation is further reproduced by a theoretical calculation, taking into account the orbital magnetization.

cond-mat.mes-hall↗

arXiv2022

Asymmetric Fraunhofer pattern in Josephson junctions from heterodimensional superlattice V$_5$S$_8$

Introduction of spin-orbit coupling (SOC) in a Josephson junction (JJ) gives rise to unusual Josephson effects. We investigate JJs based on a newly discovered heterodimensional superlattice V$_5$S$_8$ with a special form of SOC. The unique homointerface of our JJs enables elimination of extrinsic effects due to interfaces and disorder. We observe asymmetric Fraunhofer patterns with respect to both the perpendicular magnetic field and the current. The asymmetry is influenced by an in-plane magnetic field. Analysis of the pattern points to a nontrivial spatial distribution of the Josephson current that is intrinsic to the SOC in V$_5$S$_8$.

cond-mat.supr-con↗

arXiv2022

Homointerface planar Josephson junction based on inverse proximity effect

The quality of a superconductor-normal metal-superconductor Josephson junction (JJ) depends crucially on the transparency of the superconductor-normal metal (S/N) interface. We demonstrate a technique for fabricating planar JJs with perfect S/N interfaces. The technique utilizes a strong inverse proximity effect discovered in Al/V$_5$S$_8$ bilayers, by which the Al layer is driven into the resistive state. The highly transparent S/N homointerface and the peculiar normal metal enable the flow of Josephson supercurrent across a 2.9 $μ$m long weak link. Moreover, our JJ exhibits a giant critical current and a large product of the critical current and the normal state resistance.

cond-mat.supr-con↗

arXiv2021

Magneto-transport evidence for strong topological insulator phase in ZrTe5

The identification of a non-trivial band topology usually relies on directly probing the protected surface/edge states. But, it is difficult to achieve electronically in narrow-gap topological materials due to the small (meV) energy scales. Here, we demonstrate that band inversion, a crucial ingredient of the non-trivial band topology, can serve as an alternative, experimentally accessible indicator. We show that an inverted band can lead to a four-fold splitting of the non-zero Landau levels, contrasting the two-fold splitting (spin splitting only) in the normal band. We confirm our predictions in magneto-transport experiments on a narrow-gap strong topological insulator, zirconium pentatelluride (ZrTe$_5$), with the observation of additional splittings in the quantum oscillations and also an anomalous peak in the extreme quantum limit. Our work establishes an effective strategy for identifying the band inversion as well as the associated topological phases for future topological materials research.

cond-mat.mtrl-sci↗

arXiv2020

Observation of a thermoelectric Hall plateau in the extreme quantum limit

The thermoelectric Hall effect is the generation of a transverse heat current upon applying an electric field in the presence of a magnetic field. Here we demonstrate that the thermoelectric Hall conductivity $α_{xy}$ in the three-dimensional Dirac semimetal ZrTe$_5$ acquires a robust plateau in the extreme quantum limit of magnetic field. The plateau value is independent of the field strength, disorder strength, carrier concentration, or carrier sign. We explain this plateau theoretically and show that it is a unique signature of three-dimensional Dirac or Weyl electrons in the extreme quantum limit. We further find that other thermoelectric coefficients, such as the thermopower and Nernst coefficient, are greatly enhanced over their zero-field values even at relatively low fields.

cond-mat.mtrl-sci↗

arXiv2018

V$_5$S$_8$: a Kondo lattice based on intercalation of van der Waals layered transition metal dichalcogenide

Since the discovery of graphene, a tremendous amount of two dimensional (2D) materials have surfaced. Their electronic properties can usually be well understood without considering correlations between electrons. On the other hand, strong electronic correlations are known to give rise to a variety of exotic properties and new quantum phases, for instance, high temperature superconductivity, heavy fermions and quantum spin liquids. The study of these phenomena has been one of the main focuses of condensed matter physics. There is a strong incentive to introduce electronic correlations into 2D materials. Via intercalating a van der Waals layered compound VS$_2$, we show an emergence of a Kondo lattice, an extensively studied strongly correlated system, by magnetic, specific heat, electrical and thermoelectric transport studies. In particular, an exceptionally large Sommerfeld coefficient, 440 mJ$\cdot$K$^{-2}\cdot$mol$^{-1}$, indicates a strong electron correlation. The obtained Kadowaki-Woods ratio, $2.7\times 10^{-6}$ $μΩ\cdot$cm$\cdot$mol$^2\cdot$K$^2\cdot$mJ$^{-2}$, also supports the strong electron-electron interaction. The temperature dependence of the resistivity and thermopower corroborate the Kondo lattice picture. The intercalated compound is one of a few rare examples of $d$-electron Kondo lattices. We further show that the Kondo physics persists in ultra-thin films. This work thus demonstrates a route to generate strong correlations in 2D materials.

cond-mat.mtrl-sci↗

arXiv2018

Facile and fast growth of high mobility nanoribbons of ZrTe$_5$

Recently, ZrTe$_5$ has received a lot of attention as it exhibits various topological phases, such as weak and strong topological insulators, a Dirac semimetal, and a quantum spin Hall insulator in the monolayer limit. While most of studies have been focused on the three-dimensional bulk material, it is highly desired to obtain nanostructured materials due to their advantages in device applications. We report the synthesis and characterizations of ZrTe$_5$ nanoribbons. Via a silicon-assisted chemical vapor transport method, long nanoribbons with thickness as thin as 20 nm can be grown. The growth rate is over an order of magnitude faster than the previous method for growth of bulk crystals. Moreover, transport studies show that nanoribbons are of low unintentional doping and high carrier mobility, over 30,000 cm$^2$/Vs, which enable reliable determination of the Berry phase of $π$ in the $ac$ plane from quantum oscillations. Our method holds great potential in growth of high quality ultra-thin nanostructures of ZrTe$_5$.

cond-mat.mtrl-sci↗

arXiv2017

Anomalous Hall effect and magnetic orderings in nanothick V$_5$S$_8$

The rise of graphene marks the advent of two-dimensional atomic crystals, which have exhibited a cornucopia of intriguing properties, such as the integer and fractional quantum Hall effects, valley Hall effect, charge density waves and superconductivity, to name a few. Yet, magnetism, a property of extreme importance in both science and technology, remains elusive. There is a paramount need for magnetic two-dimensional crystals. With the availability of many magnetic materials consisting of van der Waals coupled two-dimensional layers, it thus boils down to the question of how the magnetic order will evolve with reducing thickness. Here we investigate the effect of thickness on the magnetic ordering in nanothick V$_5$S$_8$. We uncover an anomalous Hall effect, by which the magnetic ordering in V$_5$S$_8$ down to 3.2 nm is probed. With decreasing thickness, a breakdown of antiferromagnetism is evident, followed by a spin-glass-like state. For thinnest samples, a weak ferromagnetic ordering emerges. The results not only show an interesting effect of reducing thickness on the magnetic ordering in a potential candidate for magnetic two-dimensional crystals, but demonstrate the anomalous Hall effect as a useful characterization tool for magnetic orderings in two-dimensional systems.

cond-mat.mes-hall↗

arXiv2017

Scanning tunneling microscopy and spectroscopy of nanoscale twisted bilayer graphene

Nanoscale twisted bilayer graphene (TBG) is quite instable and will change its structure to Bernal (or AB-stacking) bilayer with a much lower energy. Therefore, the lack of nanoscale TBG makes its electronic properties not accessible in experiment up to now. In this work, a special confined TBG is obtained in the overlaid area of two continuous misoriented graphene sheets. The width of the confined region of the TBG changes gradually from about 22 nm to 0 nm. By using scanning tunnelling microscopy, we studied carefully the structure and the electronic properties of the nanoscale TBG. Our results indicate that the low-energy electronic properties, including twist-induced van Hove singularities (VHSs) and spatial modulation of local density-of-state, are strongly affected by the translational symmetry breaking of the nanoscale TBG. Whereas, the electronic properties above the energy of the VHSs are almost not influenced by the quantum confinement even when the width of the TBG is reduced to only a single moire spot.

cond-mat.mes-hall↗

arXiv2017

Ultrafast Epitaxial Growth of Metre-Sized Single-Crystal Graphene on Industrial Cu Foil

A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 minutes, of a graphene film of 5 x 50 cm2 dimension with > 99% ultra-highly oriented grains. This growth was achieved by: (i) synthesis of sub-metre-sized single-crystal Cu(111) foil as substrate; (ii) epitaxial growth of graphene islands on the Cu(111) surface; (iii) seamless merging of such graphene islands into a graphene film with high single crystallinity and (iv) the ultrafast growth of graphene film. These achievements were realized by a temperature-driven annealing technique to produce single-crystal Cu(111) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ~ 23,000 cm2V-1s-1 at 4 K and room temperature sheet resistance of ~ 230 ohm/square. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.

cond-mat.mtrl-sci↗