SearcharxivSearch

arXiv subjects

Xiaotian Ge

Publications and source records attributed to Xiaotian Ge.

3 recordsLinked to original sources

Stochastic curve shortening flow driven by a transport-type pure jump Lévy noise

We study the existence and uniqueness, the regularity, and the long-time behavior of strong solutions to stochastic curve shortening flow driven by a transport-type pure jump Lévy noise. To obtain the existence and uniqueness of strong solutions, we transform the equation into its equivalent Itô-type stochastic partial differential equation via a transport equation, and apply the monotone method with Lyapunov-type conditions. The obstacles to investigate the long-time behavior are the weak dissipativity and singularity inherent in the equation. To this end, we establish an improved regularity and prove that these solutions converge pathwise to zero at an exponential rate.

math.PR

Ergodicity of Stochastic two-phase Stefan problem driven by pure jump Lévy noise

In this paper, we consider stochastic two-phase Stefan problem driven by general jump Lévy noise. We first obtain the existence and uniqueness of the strong solution and then establish the ergodicity of the stochastic Stefan problem. Moreover, we give a precise characterization of the support of the invariant measures which provides the regularities of the stationary solutions of the stochastic free boundary problems.

math.PR

Chargeable photoconductivity in Van der Waals heterojunctions

Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, show great potential for the development of eco-friendly and high-efficiency nano-devices. Considerable research has been performed and has reported valuable applications of photovoltaic cells, photodetectors, etc. However, simultaneous energy conversion and storage in a single device has not been achieved. Here, we demonstrate a simple strategy to construct a vdW p-n junction between a WSe2 layer and quasi-2D electron gas. After once optical illumination, the device stores the light-generated electrons and holes for up to seven days, and then releases a very large photocurrent of 2.9 mA with bias voltage applied in darkness; this is referred to as chargeable photoconductivity (CPC), which completely differs from any previously observed photoelectric phenomenon. In normal photoconductivity, the recombination of electron-hole pairs takes place at the end of their lifetime, causing a release of heat; in contrast, infinite-lifetime photocarriers can be generated in CPC devices without a thermal loss. The photoelectric conversion and storage are completely self-excited during the charging process. The ratio between currents in full- and empty-energy states below the critical temperature reaches as high as 109, with an external quantum efficiency of 4410000% during optical charging. A theoretical model developed to explain the mechanism of this effect is in good agreement with the experimental data. This work paves a path towards storage-type photoconductors and high-efficiency entropy-decreasing devices.

cond-mat.mtrl-sci