arXiv subjects

Xiaoxin Wang

Publications and source records attributed to Xiaoxin Wang.

15 recordsLinked to original sources

arXiv2026

Investigation of GeSn aspect ratio trapping growth up to 8% Sn

Aspect ratio trapping (ART) growth of germanium-tin (GeSn) is a promising approach to target important objectives on the quest towards commercialization of complementary metal-oxide-semiconductor (CMOS)-compatible GeSn optoelectronics devices. Its local growth on patterned substrate allows for versatile device integration into photonics integrated circuit or for stand-alone structure like focal plane array imager. Additionally, high aspect ratio from nano-sized window can terminate early threading dislocation propagation on the oxide sidewalls, leaving subsequent growth defect-free and potentially improving the device performance. Knowledge remains missing regarding GeSn ART growth kinetics, morphology and how they evolve from thin film growth, with successful growth itself yet to be demonstrated. In this work, we report GeSn ART growth up to 8% Sn. Two configurations -- self-induced Ge core/GeSn shell for Sn content between 6% and 8%, and bulk GeSn ART for Sn content below 1% -- are observed. We present a comprehensive study on GeSn ART growth kinetics through different growth rounds and designs, showing a link between pyramid shape of ART island and successful Sn incorporation, as well as the role of growth selectivity and local heating.

cond-mat.mtrl-sci↗

arXiv2026

Large-Aperture All-Solid-State Cascaded Liquid-Crystal Beam Steering for High-Resolution Wide-Field Imaging

High-resolution wide-field imaging is essential for applications requiring simultaneous global coverage and local detail, yet conventional approaches face a fundamental trade-off: wide-FOV cameras sacrifice spatial sampling density by distributing finite detector pixels over a broad angular range, while telephoto systems resolve fine features at the cost of scene coverage. Beam-steering devices can mitigate this trade-off but are currently limited in achieving simultaneously all-solid-state, large aperture, and high-speed operation. Here, we report an all-solid-state large-aperture cascaded liquid-crystal beam-steering (CaLiBS) imaging system that extends the effective angular range of a high-resolution narrow-FOV camera by electrically steering sub-FOVs. The CaLiBS module comprises cascaded liquid crystal waveplates and liquid crystal Pancharatnam-Berry phase gratings; a theoretical voltage-prediction model with a hierarchical search algorithm enables efficient calibration under oblique incidence and 10 times faster calibration speed compared with conventional methods. The calibrated system addresses sub-FOVs across 30.3{\deg} * 30.3{\deg} at 2{\deg} intervals with diffraction efficiency above 60%. Sequential sub-FOV acquisition reconstructs a 34.7 * 34.7 composite image, an 8.6-fold enhancement in spatial-bandwidth product over a single-shot wide-FOV camera using the same detector. Combined with object tracking methods, sub-FOV switching further enables high-resolution tracking of moving vehicles within the wide-area scene. This cascaded LC architecture offers a scalable pathway toward compact, vibration-free, and high-resolution wide-field observation.

physics.optics↗

arXiv2026

Study of GeSn Selective Area Growth with Demonstration of SWIR Light Detection

As germanium-tin (GeSn) epitaxial growth quality continuously improves, the search for an efficient integration strategy of GeSn optoelectronics devices into complementary metal-oxide-semiconductor (CMOS) manufacturing line also accelerates. Selective area growth (SAG) on patterned substrate emerges as a promising approach for this quest, with locally controlled growth of GeSn laser/detector suitable for either co-integration with silicon-based waveguide structure or stand-alone module like focal plane array. In this work, we report successful GeSn SAG with Sn content ranging from 3.2% to 8.7% of good optical quality, with demonstration of tunable GeSn SAG photoluminescence and GeSn SAG photoconductor device, the latter with detection cutoff wavelength up to 2 um. In addition, we present a comprehensive study of GeSn SAG condition at different window sizes, from 2 um to 100 um, and shapes: circle, square, octagon, and rectangle. Presence of loading effect is revealed, where GeSn growth rate increases as pattern fill factor and window size shrink. It introduces a different growth condition compared to thin film growth, which can weaken or inhibit Sn incorporation at very small window size and induce Sn segregation in high Sn content SAG growth.

physics.app-ph↗

arXiv2026

Germanium-tin (GeSn) avalanche photodiode with up to 2.7 micro cutoff wavelength for extended SWIR detection

Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology in SWIR or extended SWIR range, leveraging the excellent k-factor of Si as multiplication layer and SWIR or e-SWIR band absorption of GeSn. However, unlike well-established growth of GeSn on Si with thick Ge buffer in-between to reduce threading dislocation density due to lattice mismatch, GeSn on Si APD design requires relatively thin Ge buffer to limit electric field drop through the background p-doped buffer and efficiently transporting photocarrier from GeSn absorber to Si multiplication layer, therefore making growth of high Sn content APD for e-SWIR coverage very challenging. In this work, we experimentally demonstrate GeSn on Si APD up to 12.7 percent Sn, monolithically grown on Si substrate with 122-nm-thick Ge buffer in between, which is considerably thinner than widely used 700-900 nm thick Ge buffer. Stronger relaxation of GeSn absorber via thin Ge buffer favors Sn incorporation, leading to higher Sn content than the nominal target of 8 percent Sn. Device detection range is significantly improved compared to previous work - with cutoff wavelength increased up to 2.7 micro at 300 K, in parallel with high avalanche gain at 77 K up to 21 at 1.55 micro and up to 52 at 2 micro, and good responsivity in SWIR or e-SWIR range, up to 1.45 AW-1 at 1.55 micro and 0.66 AW-1 at 2 micro.

physics.app-ph↗

arXiv2025

Heterogeneous immune recovery after viral response through a dynamical model of feedback-driven persistence and clearance

Viral infections trigger complex immune responses with heterogeneous outcomes shaped by nonlinear feedbacks. An ordinary differential equation model is developed to investigate immune response dynamics during viral infection, incorporating six modules: viral load, innate immunity, cellular immunity, humoral immunity, immune suppression, and IL-6 levels. Bifurcation analysis reveals that under continuous viral exposure, when viral clearance rate and intrinsic viral death rate satisfy specific conditions, the system exhibits up to five stable equilibria. This indicates that different health and disease states may coexist depending on initial conditions, while severe inflammation mainly arises from strong activation of cellular immunity, highlighting the complexity of immune responses. Simulations of finite-time viral exposure demonstrate multi-timescale recovery characteristics: viral load and IL-6 levels decline rapidly, whereas humoral immune activation and immunosuppression show delayed and sustained patterns. Furthermore, analysis of infectious period and disease duration also indicates that during transition from early acute response to chronic disease, viral replication rate plays a critical role, while immune response intensity is sensitive to both viral clearance and immune self-activation. Subsystem analysis identifies the three-component subsystem of viral load, innate immunity, and cellular immunity as core drivers of bistability and oscillations, while humoral immunity, immune suppression, and IL-6 primarily modulate response amplitude and timing. This work establishes a theoretical framework for analyzing immune response and chronic risks through feedback dynamical modelling, providing insights for intervention strategies.

q-bio.QM↗

arXiv2025

Conditional Success of Adaptive Therapy: The Role of Treatment-Holiday Thresholds and Non-Existence of Optimal Strategies Revealed by Mathematical Modelling and Optimal Control

Adaptive therapy improves cancer treatment by controlling the competition between sensitive and resistant cells through treatment holidays. This study highlights the critical role of treatment-holiday thresholds in adaptive therapy for tumors composed of drug-sensitive and resistant cells. Using a Lotka-Volterra model, adaptive therapy outcomes are compared with maximum tolerated dose therapy and intermittent therapy outcomes, showing that adaptive therapy success depends critically on the threshold for pausing and resuming treatment and on competitive interactions between cell populations. Three comparison scenarios between adaptive therapy and other therapies emerge: uniform-decline where adaptive therapy underperforms regardless of threshold, conditional-improve where efficacy requires threshold optimization, and uniform-improve where adaptive therapy consistently outperforms alternatives. Tumor composition including initial burden and resistant cell proportion influences outcomes. Threshold adjustments enable adaptive therapy to suppress resistant subclones while preserving sensitive cells, extending progression-free survival. Crucially, this work establishes an optimal control problem for time-to-progression and mathematically proves that under biological constraints like neutral competition or low initial burden, the theoretically optimal strategy is unrealizable as it requires infinitely many treatment holidays, rendering it clinically impractical. These findings emphasize personalized treatment strategies for enhancing long-term therapeutic outcomes.

q-bio.OT↗

arXiv2025

Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer

GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength absorption in GeSn and low impact ionization ratio of Si. Due to lattice mismatch between Si and GeSn that would degrade GeSn material quality if with direct growth, a 240-nm-thick Ge buffer was utilized which simultaneously allows for the transporting photo generated electrons from GeSn absorber to Si multiplication layer. Spectral response showed the cut off wavelength beyond 2.1 μm at room temperature. Dart current and capacitance-voltage measurements indicated a punch-through voltage of -10 V. The measured responsivities were 0.55 A/W and 0.34 A/W under 1.55 μm and 1.9 μm excitation lasers, respectively. The maximum gain was obtained as 3.44 at 77 K under 1.9 μm laser. Even at 250 K, the calculated gain was greater than unity. Simulation of electric field distribution revealed that the GeSn is partially depleted at operating voltages, which can be improved by reducing the background doping levels in GeSn absorber and Ge buffer layer.

physics.app-ph↗

arXiv2024

Atomic short-range order: a new degree of freedom for band engineering of GeSn semiconductor alloys

Chemical short-range order (SRO) in alloys denotes the statistical preference or avoidance between atomic species on neighboring lattice sites. Here, we highlight SRO as a powerful new mechanism for semiconductor alloy band engineering. Atom probe tomography reveals a significantly higher probability of Sn-Sn first nearest neighbors (1NNs) in thin-film GeSn alloys grown by molecular beam epitaxy (MBE) vs. chemical vapor deposition (CVD). Remarkably, although lower Sn concentration typically widens the bandgap, we find that the stronger presence of Sn-Sn 1NN pairs in MBE samples overrides this trend, resulting in a narrower bandgap despite having 2 at.\% lower Sn content than CVD samples. First-principles modeling corroborates this effect, attributing these SRO variations to distinctive surface terminations and growth temperatures between MBE and CVD. These findings establish SRO as a new degree of freedom for semiconductor band engineering beyond composition, strain, and quantum confinement, unlocking novel device mechanisms for the post-Moore era.

cond-mat.mtrl-sci↗

arXiv2024

Low-Temperature Synthesis of Stable CaZn$_2$P$_2$ Zintl Phosphide Thin Films as Candidate Top Absorbers

The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range of ~1.5-2.3 eV, for use in the top cell paired with a narrower-gap bottom cell. An outstanding challenge is finding materials with suitable optoelectronic and defect properties, good operational stability, and synthesis conditions that preserve underlying device layers. This study demonstrates the Zintl phosphide compound CaZn$_2$P$_2$ as a compelling candidate semiconductor for these applications. We prepare phase pure, 500 nm-thick CaZn$_2$P$_2$ thin films using a scalable reactive sputter deposition process at growth temperatures as low as 100 °C, which is desirable for device integration. UV-vis spectroscopy shows that CaZn$_2$P$_2$ films exhibit an optical absorptivity of ~10$^4$ cm$^-$$^1$ at ~1.95 eV direct band gap. Room-temperature photoluminescence (PL) measurements show near-band-edge optical emission, and time-resolved microwave conductivity (TRMC) measurements indicate a photoexcited carrier lifetime of ~30 ns. CaZn$_2$P$_2$ is highly stable in both ambient conditions and moisture, as evidenced by PL and TRMC measurements. Experimental data are supported by first-principles calculations, which indicate the absence of low-formation-energy, deep intrinsic defects. Overall, our study should motivate future work integrating this potential top cell absorber material into tandem solar cells.

cond-mat.mtrl-sci↗

arXiv2024

Monolithic Germanium Tin on Si Avalanche Photodiodes

We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn absorber to the Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before avalanche breakdown in GeSn/Si APDs for the first time. The spectral response covers 1500 to 1700 nm. The measured punch-through and breakdown voltages are 15 and 17 V, respectively. Undisputed multiplication gain was obtained with the maximum value of 4.5 at 77 K, and 1.4 at 250 K, directly in reference to the saturated primary responsivity from the same device rather than a different GeSn p-i-n photodiode in previous reports. A peak responsivity was measured as 1.12 A/W at 1550 nm and 77 K.

cond-mat.mtrl-sci↗

arXiv2023

Synergistic Photon Management and Strain-Induced Band Gap Engineering of Two-Dimensional MoS2 Using Semimetal Composite Nanostructures

2D MoS2 attracts increasing attention for its application in flexible electronics and photonic devices. For 2D material optoelectronic devices, light absorption of the molecularly thin 2D absorber would be one of the key limiting factors in device efficiency, and conventional photon management techniques are not necessarily compatible with them. In this paper, we show two semimetal composite nanostructures for synergistic photon management and strain-induced band gap engineering of 2D MoS2: (1) pseudo-periodic Sn nanodots, (2) conductive SnOx (x<1) core-shell nanoneedle structures. Without sophisticated nanolithography, both nanostructures are self-assembled from physical vapor deposition. 2D MoS2 achieves up to >15x enhancement in absorption at λ=650-950 nm under Sn nanodots, and 20-30x at λ=700-900 nm under SnOx (x<1) nanoneedles, both spanning from visible to near infrared regime. Enhanced absorption in MoS2 results from strong near field enhancement and reduced MoS2 band gap due to the tensile strain induced by the Sn nanostructures, as confirmed by Raman and photoluminescence spectroscopy. Especially, we demonstrate that up to 3.5% biaxial tensile strain is introduced to 2D MoS2 using conductive nanoneedle-structured SnOx (x<1), which reduces the band gap by ~0.35 eV to further enhance light absorption at longer wavelengths. To the best of our knowledge, this is the first demonstration of a synergistic triple-functional photon management, stressor, and conductive electrode layer on 2D MoS2. Such synergistic photon management and band gap engineering approach for extended spectral response can be further applied to other 2D materials for future 2D photonic devices.

cond-mat.mes-hall↗

arXiv2023

Extracting optical parameters of Cu-Mn-Fe spinel oxide nanoparticles for optimizing air-stable, high-efficiency solar selective coatings

High-temperature Cu-Mn-Fe spinel-oxide nanoparticle solar selective absorber coatings are investigated experimentally and theoretically. A reliable, general approach to evaluate absorption coefficient spectra from the optical measurements of the nanoparticle-pigmented coatings is developed based on solving the inverse problem using four-flux-radiative method. The derived absorption properties of NP materials can be directly applied to predict the solar absorptance, optimize the nanoparticle-pigmented coatings, and analyze the thermal degradation, which agree well with the experimental results. The analysis reveals that the Cu-Mn-Fe spinel oxides are fundamentally indirect bandgap ranging from 1.7 to 2.1 eV, while iron-free CuMn2O4 is a direct bandgap material with Eg=1.84 eV. With the same coating thickness and nanoparticle load, the solar absorptance ranks in the order of Mn2O3 < MnFe2O4 < CuFe2O4 < CuFeMnO4 < CuMn2O4. The optimized spray-coated iron-free CuMn2O4 NP-pigmented coating demonstrates a high solar absorptance of 97%, a low emittance of 55%, a high optical-to-thermal energy conversion efficiency of ~93.5 % under 1000x solar concentration at 750 degrees C, and long-term endurance upon thermal cycling between 750°C and room temperature in air. The optical parameter analysis approach can be easily extended to other material systems to facilitate the searching and optimizing high-temperature pigmented-solar selective coatings.

cond-mat.mes-hall↗

arXiv2023

Spinel Cu-Mn-Cr Oxide Nanoparticle-Pigmented Solar Selective Coatings Maintaining >94% Efficiency at 750 degrees C

High-temperature concentrating solar power (CSP) system is capable of harvesting and storing solar energy as heat towards cost-effective dispatchable solar electricity. Solar selective coating is a critical component to boost its efficiency by maximizing solar absorptance and minimizing thermal emittance losses. However, maintaining a high solar-thermal conversion efficiency >90% for long-term operation at >750 degrees C remains a significant challenge. Herein, we report spray-coated spinel Cu-Mn-Cr oxide nanoparticle-pigmented solar selective coatings on Inconel tube sections maintaining >94% efficiency at 750 degrees C and >92.5% at 800 degrees C under 1000x solar concentration after 60 simulated day-night thermal cycles in air, each cycle comprising 12h at 750 degrees C/800 degrees C and 12h cooling to 25 degrees C. The solar spectral selectivity is intrinsic to the band-to-band and d-d transitions of non-stoichiometric spinel Cu-Mn-Cr oxide nanoparticles by balancing the lattice site inversion of Cu2+ and Mn3+ on tetrahedral vs. octahedral sites. This feature offers a large fabrication tolerance in nanoparticle volume fraction and coating thickness, facilitating low-cost and scalable spray-coated high-efficiency solar selective absorbers for high-temperature CSP systems.

physics.app-ph↗

arXiv2022

3D Nanoscale Mapping of Short-Range Order in GeSn Alloys

GeSn on Si has attracted much research interest due to its tunable direct bandgap for mid-infrared applications. Recently, short-range order (SRO) in GeSn alloys has been theoretically predicted, which profoundly impacts the band structure. However, characterizing SRO in GeSn is challenging. Guided by physics-informed Poisson statistical analyses of Kth-nearest neighbors (KNN) in atom probe tomography, a new approach is demonstrated here for 3D nanoscale SRO mapping and semi-quantitative strain mapping in GeSn. For GeSn with ~14 at.% Sn, the SRO parameters of Sn-Sn 1NN in 10x10x10 nm$^{3}$ nanocubes can deviate from that of the random alloys by $\pm$15%. The relatively large fluctuation of the SRO parameters contributes to band-edge softening observed optically. Sn-Sn 1NN also tends to be more favored towards the surface, less favored under strain relaxation or tensile strain, while almost independent of local Sn composition. An algorithm based on least square fit of atomic positions further verifies this Poisson-KNN statistical method. Compared to existing macroscopic spectroscopy or electron microscopy techniques, this new APT statistical analysis uniquely offers 3D SRO mapping at nanoscale resolution in a relatively large volume with millions of atoms. It can also be extended to investigate SRO in other alloy systems.

cond-mat.mtrl-sci↗

arXiv2020

Measurement of High-temperature Thermophysical Properties of Bulk and Coatings Using Modulated Photothermal Radiometry

This paper presents the development of instrumentation for the measurement of high-temperature thermal conductivity of bulk and coatings using a modulated photothermal radiometry (MPR) method, where a sample is heated by an intensity-modulated laser to probe into different layers of the sample. While MPR has been previously established, most of the previous studies only focus on the measurement at room temperature. The MPR has not been well studied for measurements of bulk and coating materials at high temperatures, which are increasingly important for a multitude of applications, such as materials used in the concentrating solar power (CSP) plants and the nuclear reactors. MPR is a non-contact technique that utilizes the intrinsic thermal emission from the specimens for thermometry, which is favorable for measurements at high temperatures in harsh environment. The authors designed and utilized a sample holder suitable for high temperature measurement up to 973 K with good temperature uniformity within the sample. The high-temperature MPR setup was validated by measuring bulk materials with known thermal conductivity. The setup and technique were then extended to the measurement of black solar-absorbing coatings of 10 to 50 μm thick on various substrates by modulating the frequency of the laser heating beam and the thermal penetration depth. The studies showed that thermal conductivities of typical solar-absorbing coatings are 0.4 ~ 0.8 W m-1 K-1, indicating a possibly large temperature drop within the coating under high solar irradiation flux, such as over 1000-sun for central solar towers in CSP plants.

cond-mat.mtrl-sci↗