arXiv subjects

Xiaoyang Lin

Publications and source records attributed to Xiaoyang Lin.

25 records · Page 2Linked to original sources

arXiv2018

Optical control of magnetism in NiFe/VO2 heterostructures

Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow-power and ultrahigh-speed spin switches, which becomes a hot spot in the field of spintronics. However, a widely applicable and efficient method to combine optical operation with magnetic modulation is still highly desired. Here, the strongly correlated electron material VO2 is introduced to realize phase-transition based optical control of the magnetism in NiFe. The NiFe/VO2 bilayer heterostructure features appreciable modulations in electrical conductivity (55%), coercivity (60%), and magnetic anisotropy (33.5%). Further analyses indicate that interfacial strain coupling plays a crucial role in this modulation. Utilizing this optically controlled magnetism modulation feature, programmable Boolean logic gates (AND, OR, NAND, NOR, XOR, NXOR and NOT) for high-speed and low-power data processing are demonstrated based on this engineered heterostructure. As a demonstration of phase-transition spintronics, this work may pave the way for next-generation electronics in the post-Moore era.

cond-mat.mtrl-sci↗

arXiv2018

Large phase-transition-induced magnetic anisotropy change in (Co/Pt)2/VO2 heterostructure

We report the phase-transition controlled magnetic anisotropy modulation in the (Co/Pt)2/VO2 heterostructure, where VO2 is introduced into the system to applied an interfacial strain by its metal-insulator transition. A large reversible modulation of the perpendicular magnetic anisotropy (PMA) reaching 38 kJ/m3 is observed during this process. The calculated energy density variation of interfacial anisotropy reaches 100 mJ/m2, which shows significant advantage over traditional modulation strategies. Further experimental results including magnetization change versus temperature, strain buffered modulation and pre-strained sample comparison prove that the interfacial coupling between VO2 and PMA layers plays a crucial role in this modulation. This work, demonstrating the great potential of phase-transition material in efficient magnetic anisotropy modulation, would benefit the exploration for low-power consumption devices.

cond-mat.mes-hall↗

arXiv2018

Domain Wall Motion Driven by Laplace Pressure in CoFeB-MgO Nanodots with Perpendicular Anisotropy

We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 μm. Contrary to previous experiments, the switching field distribution is shifted toward lower magnetic fields as the size of the elements is reduced with a mean switching field varying as 1/w. We show that this mechanism can be explained by the nucleation of a pinned magnetic domain wall (DW) at the edges of the nanodots where damages are introduced by the patterning process. As the surface tension (Laplace pressure) applied on the DW increases when reducing the size of the nanodots, we demonstrate that the depinning field to reverse the entire elements varies as 1/w. These results suggest that the presence of DWs has to be considered in the switching process of nanoscale elements and open a path toward scalable spintronic devices.

physics.app-ph↗

arXiv2018

Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory (MRAM) and resistive random access memory (RRAM) suffer from limitations of low tunnel magnetoresistance (TMR), low access speed or finite endurance. NVMs with synergetic advantages are still highly desired for future computer architectures. Here, we report a heterogeneous memristive device composed of a magnetic tunnel junction (MTJ) nanopillar surrounded by resistive silicon switches, named resistively enhanced MTJ (Re-MTJ), that may be utilized for novel memristive memories, enabling new functionalities that are inaccessible for conventional NVMs. The Re-MTJ device features a high ON/OFF ratio of >1000% and multilevel resistance behaviour by combining magnetic switching together with resistive switching mechanisms. The magnetic switching originates from the MTJ, while the resistive switching is induced by a point-switching filament process that is related to the mobile oxygen ions. Microscopic evidence of silicon aggregated as nanocrystals along the edges of the nanopillars verifies the synergetic mechanism of the heterogeneous memristive device. This device may provide new possibilities for advanced memristive memory and computing architectures, e.g., in-memory computing and neuromorphics.

physics.app-ph↗

arXiv2018

Intelligent Identification of Two-Dimensional Structure by Machine-Learning Optical Microscopy

Two-dimensional (2D) materials and their heterostructures, with wafer-scale synthesis methods and fascinating properties, have attracted numerous interest and triggered revolutions of corresponding device applications. However, facile methods to realize accurate, intelligent and large-area characterizations of these 2D structures are still highly desired. Here, we report a successful application of machine-learning strategy in the optical identification of 2D structure. The machine-learning optical identification method (MOI method) endows optical microscopy with intelligent insight into the characteristic colour information in the optical photograph. Experimental results indicate that the MOI method enables accurate, intelligent and large-area characterizations of graphene, molybdenum disulphide (MoS2) and their heterostructures, including identifications of the thickness, the existence of impurities, and even the stacking order. Thanks to the convergence of artificial intelligence and nanoscience, this intelligent identification method can certainly promote the fundamental research and wafer-scale device application of 2D structures.

cond-mat.mtrl-sci↗

arXiv2017

Influence of heavy metal materials on magnetic properties of Pt/Co/heavy metal tri-layered structures

Pt/Co/heavy metal (HM) tri-layered structures with interfacial perpendicular magnetic anisotropy (PMA) are currently under intensive research for several emerging spintronic effects, such as spinorbit torque, domain wall motion, and room temperature skyrmions. HM materials are used as capping layers to generate the structural asymmetry and enhance the interfacial effects. For instance, the Pt/Co/Ta structure attracts a lot of attention as it may exhibit large Dzyaloshinskii-Moriya interaction. However, the dependence of magnetic properties on different capping materials has not been systematically investigated. In this paper, we experimentally show the interfacial PMA and damping constant for Pt/Co/HM tri-layered structures through time-resolved magneto-optical Kerr effect measurements as well as magnetometry measurements, where the capping HM materials are W, Ta, and Pd. We found that the Co/HM interface plays an important role on the magnetic properties. In particular, the magnetic multilayers with a W capping layer features the lowest effective damping value, which may be attributed to the different spin-orbit coupling and interfacial hybridization between Co and HM materials. Our findings allow a deep understanding of the Pt/Co/HM tri-layered structures. Such structures could lead to a better era of data storage and processing devices.

cond-mat.mes-hall↗

arXiv2016

A gate-variable spin current demultiplexer based on graphene

Spintronics, which utilizes spin as information carrier, is a promising solution for nonvolatile memory and low-power computing in the post-Moore era. An important challenge is to realize long distance spin transport, together with efficient manipulation of spin current for novel logic-processing applications. Here, we describe a gate-variable spin current demultiplexer (GSDM) based on graphene, serving as a fundamental building block of reconfigurable spin current logic circuits. The concept relies on electrical gating of carrier density dependent conductivity and spin diffusion length in graphene. As a demo, GSDM is realized for both single-layer and bilayer graphene. The distribution and propagation of spin current in the two branches of GSDM depend on spin relaxation characteristics of graphene. Compared with Elliot-Yafet spin relaxation mechanism, D'yakonov-Perel mechanism results in more appreciable gate-tuning performance. These unique features of GSDM would give rise to abundant spin logic applications, such as on-chip spin current modulators and reconfigurable spin logic circuits.

cond-mat.mes-hall↗