arXiv subjects

Xiaoyuan Hou

Publications and source records attributed to Xiaoyuan Hou.

4 recordsLinked to original sources

arXiv2014

Magnetoresistance from quenching of spin quantum correlation in organic semiconductors

We present a theory of organic magnetoresistance (OMR) based on the quenching of the quantum correlation between the carrier's spin and its local environment when the incoherent hopping takes place. We prove that this process contributes a spin-dependent prefactor to the attempt-to-escape frequency in the hopping rate, with its value modulated by the magnetic field. The resulting OMR exhibits a positive Lorentzian saturation component and a negative small-field component, which are independent of model parameters. These behaviors, with their isotope effects, are in good agreement with experimental results.

cond-mat.mtrl-sci↗

arXiv2012

Thermalization Breakdown and Conductivity Improvement within the Interacting Dynamic Disorder Model

Based on the framework of Kubo formulism, we develop the minimally entangled typical thermal state algorithm to study the temperature and time dependence of current-current correlation function in one-dimensional spinless fermion model, taking into account both the electron-electron (e-e) intersite interaction and the dynamic disorder induced by classical phonons. Without e-e interaction, the numerical results, showing an exponential decay of the time dependent correlation, could be precisely compared with that from the analytical derivation, namely, from the generalized Langevin equation. More importantly, when a strong enough e-e interaction is presence, we find a long-time correlation in the regime of small dynamic disorder, indicating the breakdown of thermal relaxation, which is a typical many-body effect. On the basis of this finding, we show that it might be applied to understand the metalliclike charge transport and the abnormal improvement of the conductivity with respect to the redoping experiment in K$_3$C$_{60}$, an organic superconducting material.

cond-mat.str-el↗

arXiv2012

Monte Carlo simulation based on dynamic disorder model in organic semiconductors: From bandlike to hopping transport

The dynamic disorder model for charge carrier transport in organic semiconductors has been extensively studied in recent years. Although it is successful on determining the value of bandlike mobility in the organic crystalline materials, the incoherent hopping, the typical transport characteristic in organic semiconductors, cannot be described. In this work, the decoherence process is taken into account via a phenomenological parameter, say decoherence time, and the projective and Monte Carlo method is applied for this model to determine the waiting time and thus the diffusion coefficient. We find the type of transport changes from bandlike to incoherent hopping with a sufficiently short decoherence time, which indicates the essential role of decoherence time in determining the type of transport in organics. We have also discussed the spatial extent of carriers for different decoherence time, and the transition from delocalization (carrier resides in about 10 molecules) to localization is observed. Based on the experimental results of spatial extent, we estimate the decoherence time in pentacene has the order of 1ps. Furthermore, the dependence of diffusion coefficient on decoherence time is also investigated, and corresponding experiments are discussed.

cond-mat.mtrl-sci↗

arXiv2010

Spin-Boson Theory for Magnetotransport in Organic Semiconducting Materials

We present a spin-boson theory for magnetotransport in organic semiconducting materials, on the basis of a coupling between charge carriers' spin and a local bosonic environment, which is shown to be an irreducible ingredient in understanding of the anomalous organic magnetoresistance (OMR). Among those composing this environment triplet-excitons play a basic role. The incoherent hopping rate between molecules is calculated to give out the fundamental behavior of OMR. The underlying mechanism is revealed from the calculation of entanglement, represented by the von Neumann entropy, between the carrier's spin and bosons. We also obtain the dependence of OMR on the bias voltage, the spin-boson coupling, and the boson frequency. The results obtained from the theory are in good agreement with experiments.

cond-mat.mtrl-sci↗