arXiv subjects

Xin Ou

Publications and source records attributed to Xin Ou.

At least 19 recordsLinked to original sources

arXiv2026

Physics-Constrained Inverse Estimation of Irradiation-Induced Strain in He-H Ion-Implanted 4H-SiC Using Nanoindentation and Finite Element Modeling

Nanoindentation is widely used to evaluate the mechanical properties of irradiated materials however its potential for quantifying irradiation induced subsurface strain remains underexplored. In this work, an integrated experimental numerical framework based on a physics constrained inverse modeling approach is employed to estimate the magnitude of a depth dependent irradiation induced strain distribution in single crystal 4H SiC following sequential He and H ion implantation. The approach combines depth sensing nanoindentation, finite element modeling FEM, and a simplex based inverse optimization routine to calibrate a physically motivated eigenstrain profile derived from ion damage simulations. The strain field is assumed to follow a lognormal distribution consistent with independently determined damage profiles SRIM, and is implemented in the FEM model through a depth dependent thermal expansion formulation. By minimizing the squared error between simulated and experimental force displacement curves, the peak tensile strain is estimated to be 0.91, accompanied by an effective Young s modulus of 310 GPa and a yield strength of 16.4 GPa. Independent validation using nano beam precession electron diffraction N PED confirms good agreement between the reconstructed and experimentally measured out of plane strain profiles in both magnitude and spatial distribution. The results demonstrate that nanoindentation, when combined with physics based inverse modeling, can provide a practical tool for quantifying irradiation-induced strain and residual stress in nuclear ceramics. This methodology offers a complementary approach to diffraction based techniques for assessing subsurface damage in ion irradiated materials relevant to advanced nuclear systems.

physics.app-ph↗

arXiv2026

Evolution of cooperation with Q-learning: how much information do we need?

Cooperation is ubiquitous in both natural and human societies, yet its evolutionary basis remains a major challenge. A long-standing puzzle is whether having more information leads to better decision-making and thus a higher level of cooperation. To address this question, we adopt a recently developed reinforcement learning framework in which individuals learn through trial and error to maximize cumulative rewards - a paradigm that has successfully explained diverse emergent patterns in human behaviors. Specifically, we equip a structured population with the Q-learning algorithm and systematically vary the size of the interactive neighborhood, which serves as a proxy for perceived information. Interestingly, we observe a non-monotonic relationship between cooperation prevalence and neighborhood size in both two-dimensional square lattices and Barabasi-Albert scale-free networks. This inverted U-shaped dependence reveals that an optimal amount of information exists, yielding the highest level of cooperation. Mechanistic analyses show that a moderate neighborhood size enables individuals to strike an optimal balance between information sufficiency and decision-making tractability. This balance allows them to detect reciprocal opportunities while avoiding the deterioration of decision quality due to information overload. Our findings challenge everyday intuition, suggesting that a proper amount of information - not more - is optimal for the emergence of cooperation.

physics.soc-ph↗

arXiv2026

Quantum light source with lithium tantalate for scalable photonic quantum circuits

Thin-film lithium tantalate (TFLT) has emerged as a promising integrated photonic platform owing to its low photorefractive noise, high optical damage threshold, and reduced birefringence, attracting increasing interest for scalable photonic technologies. Here, to the best of our knowledge, we demonstrate the first quantum light source with TFLT via spontaneous four-wave mixing, bridging the gap between the rapidly advancing classical TFLT ecosystem and integrated quantum photonics. The fabricated microring exhibits a free spectral range of 350~GHz and an optical quality factor of $10^6$, enabling efficient cavity-enhanced nonlinear interactions. Correlated photon pairs are generated across the telecom band from 1510 to 1570~nm, with a photon pair generation rate of 24 $\mathrm{MHz/mW^{2}}$ at a wavelength of 1535.04 nm. The source delivers strongly antibunched heralded single photons with $g^{(2)}_{H}(0)=0.071\pm0.004$ at a heralding rate of 170 kHz, while the unheralded statistics yield $g^{(2)}(0)=1.93 \pm 0.05$, indicating near-single-temporal-mode emission. Energy-time entanglement is further confirmed by a raw two-photon interference visibility of $92.55\pm0.94\%$, well above the Bell-inequality violation threshold. These results establish TFLT as a manufacturing-compatible platform for scalable photonic quantum circuits, paving the way for the monolithic co-integration of classical and quantum photonic functionalities.

quant-ph↗

arXiv2026

Integrated time-bin entangled quantum light source on a 4H-SiC microring chip

Integrated time-bin-entangled photon-pair source with cavity-enhanced nonlinear optical processes is essential for quantum information technologies. However, microcavities with a high quality factor inherently introduce a trade-off between generation efficiency and photon bandwidth, which hinders the development of high-speed quantum networks with an integrated source. Here, we address this challenge by optimizing the nonlinearity property of the material and the geometry of the integrated microring resonator with a 4H-silicon carbide platform. Operating at a loaded quality factor of 1.9 $\times$ 10^5 - spectral bandwidth of 1.0 GHz and pumped with 300-ps double pulses separated by 1.25 ns at a repetition rate of 160 MHz, the device achieves a time-bin-entangled photon-pair generation rate of 1.35 $\times$ 10^7 s^-1 mW^-2. A raw visibility of 95.55 $\pm$ 0.18% is measured, showing a violation of Bell's inequality by more than 138 standard deviations, and a fidelity of 94.37 $\pm$ 0.22% is obtained by quantum state tomography. These results provide a scalable pathway to an efficient and broadband time-bin entangled quantum light source, overcoming intrinsic limitations of cavity-based designs and advancing integrated platforms for future quantum communication networks.

quant-ph↗

arXiv2026

High-Efficiency Acousto-Optic Modulation on Non-Suspended Thin-Film Lithium Tantalate

Acousto-optic (AO) interactions provide a powerful interface between the microwave and optical domains, enabling functionalities such as optical switching, non-reciprocal propagation and efficient microwave-to-optical transduction. Integrated demonstrations to date have largely relied on thin-film lithium niobate (TFLN), which offers strong piezoelectric response and low optical loss performance. Here, we establish lithium tantalate on insulator (LTOI) as a scalable platform for integrated acousto-optics. LTOI combines intrinsically low birefringence, high optical damage threshold, strong electro-optic and Kerr nonlinearities, and superior acoustic quality factors with a mature high-volume manufacturing base. We demonstrate for the first time acousto-optic modulation on the LTOI platform. By exploiting the anisotropy of surface acoustic waves, we reveal a direct correlation between acousto-optic modulation efficiency and the electromechanical coupling coefficient of lithium tantalate. In particular, acoustic excitation along the crystal Z-axis enhances the higher-order R1 mode, yielding the highest modulation efficiency. Our Mach-Zehnder interferometers achieve a modulation efficiency of 0.68 $\mathrm{\mathbf{V \cdot cm}}$, while racetrack resonators reach 0.022 $\mathrm{\mathbf{V \cdot cm}}$ -representing, to the best of our knowledge, the lowest $\mathrm{V_\pi L}$ demonstrated in non-suspended ferroelectric platforms. This record performance directly enables microwave-to-optical conversion without suspended structures, establishing LTOI as a robust and scalable platform for integrated acousto-optics with broad applications in communications, signal processing, and quantum information technologies.

physics.optics↗

arXiv2026

Toward scalable and bias-stable optical phased arrays on lithium tantalate

Ferroelectric materials are an ideal platform for high-speed reconfigurable photonic integrated circuits (PICs) for classical and quantum photonic computations, communications, and sensing. Most reconfigurable PIC devices achieve their functionalities via interference and are therefore highly sensitive to phase errors. Under static bias, carrier drift in ferroelectric waveguides induces continuous phase drift, creating a severe bottleneck for both PIC functionality and scalability. Here we propose achieving bias-stable and scalable ferroelectric PICs by exploiting the intrinsically low carrier drift of lithium tantalate (LT). Taking one of the PIC devices that is most sensitive to phase drift, the optical phased array (OPA), as an example, we designed and fabricated an integrated LT OPA that can keep the far-field main lobe 8 dB higher than side lobes for over 4 hours, representing at least a two-order-of-magnitude improvement over the state of the art. We demonstrated our device's capability in generating arbitrary spatiotemporal waveforms with a modulation frequency as low as 0.1 Hz, leading to practical applications in optical tweezers, trapped-ion quantum computers, adaptive optics for astronomy, AR, 3D printers, LiDAR, and free-space optical communications. Beyond OPA, our work establishes LT as a bias-stable, scalable, and high-speed PIC platform for large-scale classical and quantum photonic systems.

physics.optics↗

arXiv2026

Monolithic integration of diverse crystalline thin films on diamond for near-junction thermal management

The pursuit of extreme miniaturization and high power in 6G RF front-ends has cast thermal dissipation as the central challenge. Here, we have demonstrated the monolithic integration of functionally distinct single-crystal thin films, including \b{eta}-Ga2O3, Si, GaN, and LiTaO3, onto a single diamond substrate using a multi-step transfer printing technique. Focusing on the critical \b{eta}-Ga2O3/diamond interface, we achieve an exceptional interfacial thermal conductance (ITC) of 149 MW m-2 K-1 through ultra-high vacuum (UHV) annealing, creating an atomically sharp interface featuring covalent bonding. Vibrational electron energy-loss spectroscopy (EELS) analysis combining with molecular dynamics (MD) simulations reveal that distinctive interfacial phonon modes at the \b{eta}-Ga2O3/diamond heterointerface dominate ultrahigh ITC. We experimentally demonstrate that by improving the ITC, the thermal resistance (Rth) of a diamond-based \b{eta}-Ga2O3 MOSFET is driven to a record-low value of 1.58 K mm W-1, underscoring the critical role of interface engineering in near-junction thermal management for diamond-integrated devices. This work demonstrates a scalable, diamond-based monolithic integration platform designed to solve the near-junction thermal challenges in high-power RF front-ends.

cond-mat.mtrl-sci↗

arXiv2026

A brief review of evolutionary game dynamics in the reinforcement learning paradigm

Cooperation, fairness, trust, and resource coordination are cornerstones of modern civilization, yet their emergence remains inadequately explained by the persistent discrepancies between theoretical predictions and behavioral experiments. Part of this gap may arise from the imitation learning paradigm commonly used in prior theoretical models, which assumes individuals merely copy successful neighbors according to predetermined, fixed rules. This review examines recent advances in evolutionary game dynamics that employ reinforcement learning (RL) as an alternative paradigm. In RL, individuals learn through trial and error and introspectively refine their strategies based on environmental feedback. We begin by introducing key concepts in evolutionary game theory and the two learning paradigms, then synthesize progress in applying RL to elucidate cooperation, trust, fairness, optimal resource coordination, and ecological dynamics. Collectively, these studies indicate that RL offers a promising unified framework for understanding the diverse social and ecological phenomena observed in human and natural systems.

q-bio.PE↗

arXiv2025

Octave-spanning, deterministic single soliton generation in 4H-silicon carbide-on-insulator microring resonators

The miniaturization of self-referencing frequency comb systems enables emerging applications in metrology and spectroscopy. One major challenge in realizing the chip-scale self-referencing function is to generate octave-spanning soliton microcombs with low operation power. Accessing soliton states is also not trivial due to the thermal effect. Though an auxiliary laser was utilized to compensate for the thermal effect, deterministic single soliton generation is still elusive, especially for broadband operation. In this work, dispersion management is performed for a 4H-silicon carbide-on-insulator (SiCOI) multi-mode microring resonator, benefiting from the submicron-confinement waveguide layout. The fundamental transverse electric (TE) mode is engineered to anomalous dispersion for two dispersive waves generation over an octave span. While a higher order TE mode is engineered to normal dispersion to accommodate the auxiliary light for thermal compensation. The normal dispersion prevents modulation-instability Kerr comb generation, allowing for a large soliton existence range. We achieve microring resonators with Q up to 5.8 million and sub-milli-watt-threshold Kerr comb generation. Combining the dispersion-managed design and high Q device, we demonstrate the deterministic generation of a single soliton comb spanning beyond an octave with a low on-chip power of 60 mW. Our demonstration paves the way to realize chip-scale, turn-key, self-referenced frequency combs.

physics.optics↗

arXiv2025

An integrated photonic millimeter-wave receiver with sub-ambient noise

Decades of progress in radiofrequency (RF) transistors and receiver frontends have profoundly impacted wireless communications, remote sensing, navigation, and instrumentation. Growing demands for data throughput in 6G networks, timing precision in positioning systems, and resolution in atmospheric sensing and automotive radar have pushed receiver frontends into the millimeter-wave (mmW) and sub-mmW/THz regimes. At these frequencies, however, the noise performance of field-effect transistors (FETs) degrades rapidly due to parasitic effects, limited carrier mobility, hot electrons, and shot noise. Parametric transducers that couple electromagnetic signals to optical fields offer quantum-limited sensitivity at room temperature. Electro-optic materials enable receivers that convert RF signals into optical phase shifts. While early demonstrations used resonant devices and recent efforts have focused on cryogenic microwave-to-optical quantum transduction, room-temperature electro-optic receivers have yet to achieve noise figures comparable to their electronic counterparts. Here we demonstrate a room-temperature integrated cavity electro-optic mmW receiver on a lithium tantalate (LiTaO3) photonic integrated circuit with 2.5% on-chip photon-number transduction efficiency, achieving 250 K noise temperature at 59.33 GHz--matching state-of-the-art LNAs. We report the first direct resolution of thermal noise in cavity electro-optic transduction, showing the system is fundamentally limited by thermal photon occupation (~100) in the mmW cavity. Our work establishes integrated photonics as a path to surpass electronic LNAs while offering exceptional resilience to strong electromagnetic inputs and immunity to EMI, establishing cavity electro-optics as a low-noise, chip-scale, EMI-resilient receiver frontend for mmW applications and scalable analog processing in the optical domain.

physics.optics↗

arXiv2025

Nanoscale Strain Evolution and Grain Boundary-Mediated Defect Sink Behavior in Irradiated SiC: Insights from N-PED and DFT

Understanding irradiation-induced strain in silicon carbide (SiC) is essential for designing radiation-tolerant ceramic materials. However, conventional methods often fail to resolve nanoscale strain gradients, especially in polycrystalline forms. In this study, we employ nano-beam precession electron diffraction (N-PED) to perform high-resolution, multi-directional strain mapping in both single-crystal 4H-SiC and polycrystalline {\alpha}-SiC subjected to helium and hydrogen ion irradiation. The high-resolution X-ray diffraction (HR-XRD) simulations of He + H irradiated single-crystal 4H-SiC closely match the strain profiles obtained from N-PED, demonstrating the reliability and accuracy of the N-PED method. In He-irradiated polycrystalline {\alpha}-SiC at high temperatures, a bubble-depleted zone (BDZ) near the grain boundary (GB) reveals that GBs act as active sinks for irradiation-induced defects. N-PED further shows strain amplification localized at the GBs, reaching up to 2.5%, along with strain relief within the BDZ. To explain this behavior, density functional theory (DFT) calculations of binding and migration energies indicate a strong tendency for Si, C, and He atoms to segregate toward the GB core. This segregation reduces the availability of vacancies to accommodate He atoms and leads to local strain relaxation near the GB. Furthermore, first-principles tensile simulations reveal that Si and C interstitials mitigate He-induced GB embrittlement. Charge density and DOS analyses link this effect to the bonding characteristics between point defects and neighboring atoms at GB. These insights underscore the importance of grain boundary engineering in enhancing radiation tolerance of SiC for nuclear and space applications.

cond-mat.mtrl-sci↗

arXiv2025

Heterogeneously integrated lithium tantalate-on-silicon nitride modulators for high-speed communications

Driven by the prospects of higher bandwidths for optical interconnects, integrated modulators involving materials beyond those available in silicon manufacturing increasingly rely on the Pockels effect. For instance, wafer-scale bonding of lithium niobate films onto ultralow loss silicon nitride photonic integrated circuits provides heterogeneous integrated devices with low modulation voltages operating at higher speeds than silicon photonics. However, in spite of its excellent electro-optic modulation capabilities, lithium niobate suffers from drawbacks such as birefringence and long-term bias instability. Among other available electro-optic materials, lithium tantalate can overcome these shortcomings with its comparable electro-optic coefficient, significantly improved photostability, low birefringence, higher optical damage threshold, and enhanced DC bias stability. Here, we demonstrate wafer-scale heterogeneous integration of lithium tantalate films on low-loss silicon nitride photonic integrated circuits. With this hybrid platform, we implement modulators that combine the ultralow optical loss ($\sim$ 14.2 dB/m), mature processing and wide transparency of silicon nitride waveguides with the ultrafast electro-optic response of thin-film lithium tantalate. The resulting devices achieve a 6 V half-wave voltage, and support modulation bandwidths of up to 100 GHz. We use single intensity modulators and in-phase/quadrature (IQ) modulators to transmit PAM4 and 16-QAM signals reaching up to 333 and 581 Gbit/second net data rates, respectively. Our results demonstrate that lithium tantalate is a viable approach to broadband photonics sustaining extended optical propagation, which can uniquely contribute to technologies such as RF photonics, interconnects, and analog signal processors.

physics.optics↗

arXiv2025

Deterministic and Scalable Coupling of Single 4H-SiC Spin Defects into Bullseye Cavities

Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI (silicon-carbide-on-insulator) makes it an ideal platform for integrated quantum photonic devices and circuits. However, the deterministic integration of single spin defects into high-performance photonic cavities on this platform has remained a key challenge. In this work, we demonstrate the deterministic and scalable coupling of both ensemble (PL4) and single PL6 spin defects into monolithic bullseye cavities on the 4H-SiCOI platform. By tuning the cavity resonance, we achieve a 40-fold enhancement of the zero-phonon line (ZPL) intensity from ensemble PL4 defects, corresponding to a Purcell factor of approximately 5.0. For deterministically coupled single PL6 defects, we observe a threefold increase in the saturated photon count rate, confirm single-photon emission, and demonstrate coherent control of the spin state through optically detected magnetic resonance (ODMR), resonant excitation, and Rabi oscillations. These advancements establish a viable pathway for developing scalable, high-performance SiC-based quantum photonic circuits.

quant-ph↗

arXiv2025

Strain Enhanced Spin Readout Contrast in Silicon Carbide Membranes

Quantum defects in solids have emerged as a transformative platform for advancing quantum technologies. A key requirement for these applications is achieving high-fidelity single-spin readout, particularly at room temperature for quantum biosensing. Here, we demonstrate through ab initio simulations of a primary quantum defect in 4H silicon carbide that strain is an effective control parameter for significantly enhancing readout contrast. We validate this principle experimentally by inducing local strain in silicon carbide-on-insulator membranes, achieving a readout contrast exceeding 60% while preserving the favorable coherence properties of single spins. Our findings establish strain engineering as a powerful and versatile strategy for optimizing coherent spin-photon interfaces in solid-state quantum systems.

quant-ph↗

arXiv2025

Hybrid and scalable photonic circuit cavity quantum electrodynamics

Similar to superconducting circuit quantum electrodynamics (cQED), the development of a photonic analog--specifically, photonic circuit cQED--has become a major focus in integrated quantum photonics. Current solid-state cQED devices, however, face scalability challenges due to the difficulty in simultaneously spectral tuning of cavity modes and quantum emitters while ensuring in-plane optical modes confinement for efficient on-chip light routing. Here, we overcome these limitations by proposing and demonstrating a hybrid solid-state cQED platform integrated on a chip. Our device integrates semiconducting quantum dots (QDs) with a thin-film lithium niobate (TFLN) microring resonator. Leveraging TFLN's ferroelectric and electro-optic (EO) properties, we implement local spectral tuning of both waveguide-coupled QDs and cavity modes. This approach achieves a broad spectral tuning range of up to 4.82 nm for individual QDs, enabling deterministic on-chip single-photon emission with a Purcell factor of 3.52. When combined with EO cavity tuning, we realize a spectrally tunable hybrid photonic circuit cQED device, sustaining near-constant Purcell factors of 1.89 over a 0.30 nm spectral range. This achievement enables scalable on-chip cavity-enhanced single-photon sources while preserving optical properties and maintaining compatibility with advanced photonic architectures, marking a significant step toward practical implementation of large-scale chip-based quantum networks.

quant-ph↗

arXiv2025

Impact of helium ion irradiation on the thermal properties of superconducting nanowire single-photon detectors

SNSPDs are indispensable for applications ranging from quantum information processing to deep-space optical communications, owing to their high detection efficiency, low dark counts, and excellent timing resolution. However, further improving the intrinsic detection efficiency (IDE) remains crucial for optimizing SNSPD performance. Ion irradiation has recently emerged as a powerful post-fabrication method to enhance SNSPD characteristics. Here, we studied the effects of He-ion irradiation on the thermal properties of NbN SNSPDs. We systematically examine the evolution of thermal boundary conductance as a function of ion fluence (0-1.1E17 ions/cm2), observing a 57% decrease from 127 to 54 W/m^2K^4 with increasing fluence, followed by saturation at approximately 9E16 ions/cm2. At this fluence, the minimum hotspot relaxation time measurements indicate a 41% increase, rising from 17 to 24 ps,while the electron-phonon interaction time decreases, with the magnitude of change depending on temperature and sample batch.TEM reveals defect formation at the NbN/SiO2 interface (6-8 nm) and He-bubble formation within the SiO2 layer (30-260 nm), contributing to the extended thermal relaxation time. These irradiation-induced modifications play a key role in enhancing the IDE of the treated devices. We further demonstrate a post-irradiation SNSPD showing a saturated IDE plateau at 2000 nm from 2.7 K to 28 mK, enabled by thermal modifications and a weakly wavelength-dependent avalanche-assisted mechanism. Our findings highlight ion irradiation as a valuable tool for thermal tailoring in SNSPDs and advance the understanding of detection physics and defect engineering in superconducting optoelectronics.

physics.app-ph↗

arXiv2025

Stable Soliton Microcomb Generation in X-cut Lithium Tantalate via Thermal-Assisted Photorefractive Suppression

Chip-based soliton frequency microcombs combine compact size, broad bandwidth, and high coherence, presenting a promising solution for integrated optical telecommunications, precision sensing, and spectroscopy. Recent progress in ferroelectric thin films, particularly thin-film Lithium niobate (LN) and thin-film Lithium tantalate (LT), has significantly advanced electro-optic (EO) modulation and soliton microcombs generation, leveraging their strong third-order nonlinearity and high Pockels coefficients. However, achieving soliton frequency combs in X-cut ferroelectric materials remains challenging due to the competing effects of thermo-optic and photorefractive phenomena. These issues hinder the simultaneous realization of soliton generation and high-speed EO modulation. Here, following the thermal-regulated carrier behaviour and auxiliary-laser-assisted approach, we propose a convenient mechanism to suppress both photorefractive and thermal dragging effect at once, and implement a facile method for soliton formation and its long-term stabilization in integrated X-cut LT microresonators for the first time. The resulting mode-locked states exhibit robust stability against perturbations, enabling new pathways for fully integrated photonic circuits that combine Kerr nonlinearity with high-speed EO functionality.

physics.optics↗

arXiv2025

Least energy solutions of two asymptotically cubic Kirchhoff equations on locally finite graphs

We study the existence of least energy solutions for two Kirchhoff equations with the asymptotically cubic nonlinearity $f(u)=λu+η|u|^2u$ on a locally weighted and connected finite graph $G=(V,E)$. Such nonlinearity satisfies neither $\frac{F(u)}{u^4}\to +\infty$ as $|u|\to\infty$, where $F(u)=\int_0^uf(s)ds$, nor $\frac{f(u)}{u}\to 0$ as $u\to 0$. By utilizing the constrained variational method, we prove that there exist $λ_1\ge 0$ and $η_0\ge 0$ ($λ_1^*\ge 0$ and $η_0^*\ge 0$) such that these two equations have at least a least energy solution if $|λ| η_0$ ($η>η_0^*$).

math.AP↗