arXiv subjects

Xin-Gang Zhao

Publications and source records attributed to Xin-Gang Zhao.

10 recordsLinked to original sources

arXiv2023

Insulating band gaps both below and above the Néel temperature in d-electron LaTiO3, LaVO3, SrMnO3, and LaMnO3 perovskites as a symmetry-breaking event

Compounds having an odd number of electrons with the same orbital character in occupied and unoccupied band edge states would be expected to have band degeneracy at the Fermi energy, making such reference system metals. Yet, many ABO3 oxide perovskites with a magnetic 3d B-atom are, in fact, insulators both below and above the Neel temperature. These inconsistencies between experimental observation and expectation have been traditionally resolved by invoking degeneracy-breaking physics based largely on high-order electron effects, such as strong interelectronic correlation (the Mott mechanism). Such explanations generally utilize the highest symmetry structure, considering microscopic degrees of freedom (m-DOF) as largely passive spectators. Yet, it has long been known that ABO3 perovskites can manifest an arrangement of m-DOFs in the form of octahedral tilting, bond dimerization, Jahn-Teller distortions, and ordering of local magnetic moments as part of the stabilizing intrinsic symmetry. Such m-DOFs are seen both by local experimental probes and theoretically in total energy minimization of its Born-Oppenheimer state. While such local structural and magnetic symmetry breaking motifs were often considered to be the reason for gapping of the reference system below the transition into Para phases, it was also often thought that above the transition those local motifs might vanish, requiring a different mechanism for gapping - such as strong correlation. Here we examine if such intrinsic structural and magnetic symmetry breaking might systematically explain the formation of insulating band gaps both below and above the magnetic transition and account at the same time for specific and non-accidental exceptions of the absence of gaping in some compounds, such as SrVO3.

cond-mat.str-el↗

arXiv2021

Intrinsic local symmetry-breaking in nominally cubic paraelectric BaTiO3

Whereas low-temperature ferroelectrics have a well understood ordered spatial dipole arrangement, the fate of these dipoles in paraelectric phases remains poorly understood. Using density functional theory (DFT), we find that unlike the case in conventional non-polar ABO$_3$ compounds illustrated here for cubic BaZrO$_3$, the origin of the distribution of the B site off-centering in cubic paraelectric such as BaTiO$_3$ is an intrinsic, energy stabilizing symmetry breaking. Minimizing the internal energy E of a constrained cubic phase already reveals the formation of a distribution of intrinsic local displacements that (i) mimic the symmetries of the low temperature phases, while (ii) being the precursors of what finite temperature DFT Molecular Dynamics finds as thermal motifs. The implications of such symmetry breaking on the microscopic structures and anomalous properties in these kinds of PE materials are discussed.

cond-mat.mtrl-sci↗

arXiv2021

The effects of intrinsic local distortions vs. dynamic thermal motions on the stability and band gaps of cubic oxide and halide perovskites

Corner-shared ABX$_3$ perovskites have long featured prominently in solid-state chemistry and condensed matter physics. Still, the joint understanding of their two main subgroups-halides and oxides-has not been fully developed. Indeed, unlike the case that compounds having a single repeated motif ("monomorphous"), certain cubic perovskites can manifest a non-thermal distribution of local motifs ("polymorphous networks"). Such intrinsic deformations can include positional degrees of freedom. Unlike thermal motion, such intrinsic distortions do not time-average to zero. The present study compares electronic structure features of oxide and halide perovskites starting from the intrinsic polymorphous network described by DFT minimization of the internal energy, continuing to finite temperature thermal disorder using AIMD. We find that (i) different oxide vs. halide ABX$_3$ compounds adopt different energy-lowering distortion modes. The DFT calculated pair distribution function (PDF) of SrTiO$_3$ agrees with the recently measured PDF. (ii) In both oxides and halides, such intrinsic distortions lead to bandgap blueshifts with respect to monomorphous structure. (iii) For oxide perovskites, high-temperature AIMD simulations initiated from the polymorphous structures reveal that the thermally-induced distortions can lead to a bandgap redshift. (iv) In contrast, for cubic CsPbI$_3$, both the intrinsic distortions and the thermal distortions contribute in tandem to bandgap blueshift, the former, intrinsic effect being dominant. (v) In the oxide SrTiO$_3$ and CaTiO$_3$ (but not in halide), octahedral tilting leads to the emergence of a distinct $Γ$-$Γ$ direct bandgap component as a secondary valley minimum to the well-known indirect R-$Γ$ gap. Understanding such intrinsic vs. thermal effects on oxide vs. halide perovskites holds the potential for designing target electronic properties.

cond-mat.mtrl-sci↗

arXiv2021

Local positional and spin symmetry breaking as a source of magnetism and insulation in paramagnetic EuTiO3

We consider theoretically the paramagnetic phases of EuTiO3 that represent configurations created by two sets of microscopic degrees of freedom (m-DOF): positional symmetry breaking due to octahedral rotations and magnetic symmetry breaking due to spin disorder. The effect of these sets of m-DOFs on the electronic structure and properties of the para phases is assessed by considering sufficiently large (super) cells with the required nominal global average symmetry, allowing, however, the local positional and magnetic symmetries to be lowered. We find that tendencies for local symmetry breaking can be monitored by following total energy lowering in mean-field like density functional theory, without recourse for strong correlation effects. While most nominally cubic ABO3 perovskites are known for their symmetry breaking due to the B-atom sublattice, the case of f-electron magnetism in EuTiO3 is associated with A- sublattice symmetry breaking and its coupling to structural distortions. We find that (i) paramagnetic cubic EuTiO3 has an intrinsic tendency for both magnetic and positional symmetry breaking, while paramagnetic tetragonal EuTiO3 has only magnetic symmetry lowering and no noticeable positional symmetry lowering with respect to low-temperature antiferromagnetic tetragonal phase. (ii) Properly modeled paramagnetic tetragonal and cubic EuTiO3 have a nonzero local magnetic moment on each Eu ion, consistent with the experimental observations of local magnetism in the para phases of EuTiO3 significantly above the Néel temperature. Interestingly, (iii) the local positional distortion modes in the short-range ordered para phases are inherited from the long-range ordered low-temperature antiferromagnetic ground state phase.

cond-mat.mtrl-sci↗

arXiv2021

JAMIP: an artificial-intelligence aided data-driven infrastructure for computational materials informatics

Materials informatics has emerged as a promisingly new paradigm for accelerating materials discovery and design. It exploits the intelligent power of machine learning methods in massive materials data from experiments or simulations to seek for new materials, functionality, principles, etc. Developing specialized facility to generate, collect, manage, learn and mine large-scale materials data is crucial to materials informatics. We herein developed an artificial-intelligence-aided data-driven infrastructure named Jilin Artificial-intelligence aided Materials-design Integrated Package (JAMIP), which is an open-source Python framework to meet the research requirements of computational materials informatics. It is integrated by materials production factory, high-throughput first-principles calculations engine, automatic tasks submission and monitoring progress, data extraction, management and storage system, and artificial intelligence machine learning based data mining functions. We have integrated specific features such as inorganic crystal structure prototype database to facilitate high-throughput calculations and essential modules associated with machine learning studies of functional materials. We demonstrated how our developed code is useful in exploring materials informatics of optoelectronic semiconductors by taking halide perovskites as typical case. By obeying the principles of automation, extensibility, reliability and intelligence, the JAMIP code is a promisingly powerful tool contributing to the fast-growing field of computational materials informatics.

cond-mat.mtrl-sci↗

arXiv2019

Computational Design of Mixed-valence Tin Sulfides as Solar Absorbers

Binary tin sulfides are appealing because of their simple stoichiometry and semiconducting properties and are potentially cost-effective optoelectronic materials. The multivalency of Sn allows yet more intermediate compositions, Sn$_x$S$_y$, whose structures and properties are of interest.Sn$_2$S$_3$ is already under consideration as a mixed-valence semiconductor. Other intermediate compositions have remained elusive. Here we report a comprehensive study of phase stability of the Sn$_x$S$_y$ series compounds, utilizing swarm-intelligence crystal structure search method combined with first-principles energetic calculations. We find that the stability of mixed-valence Sn$_x$S$_y$ compounds with respect to decomposition into pure-valence SnS and SnS$_2$ is in general weaker than the Sn$_x$O$_y$ counterparts, likely due to differences in chemical bonding. Besides identifying the experimentally discovered stable phases of Sn$_2$S$_3$, our calculations indicate that the Sn$_3$S$_4$ phase is another mixed-valence composition which shows marginal stability with respect to decomposition into SnS and SnS$_2$. Other studied compositions may be metastable under ambient conditions, with slightly positive formation enthalpies. We find two structures of Sn$_3$S$_4$ having comparably low energies, both of which feature one-dimensional chain-like fragments obtained by breaking up the edge-connected octahedral layers of SnS$_2$. Both structures indicate lattice phonon stability and one shows quasi-direct band gap with a calculated value of 1.43 eV, ideal for solar absorbers. A further analysis of the composition-structure-property relationship supports the notion that lowdimensional Sn-S motifs and van der Waals interaction may lead to diverse structure types and chemical compositions, having functional properties that are yet to be identified in the Sn$_x$S$_y$ series with mixed valency.

cond-mat.mtrl-sci↗

arXiv2018

Bismuth and Antimony Based Oxyhalides and Chalcohalides as Potential Optoelectronic Materials

In the last decade the ns$^2$ cations (e.g., Pb$^{2+}$ and Sn$^{2+}$) based halides have emerged as one of the most exciting new classes of optoelectronic materials, as exemplified by for instance hybrid perovskite solar absorbers. These materials not only exhibit unprecedented performance in some cases, but they also appear to break new ground with their unexpected properties, such as extreme tolerance to defects. However, because of the relatively recent emergence of this class of materials, there remain many yet to be fully explored compounds. Here we assess a series of bismuth/antimony oxyhalides and chalcohalides using consistent first principles methods to ascertain their properties and obtain trends. Based on these calculations, we identify a subset consisting of three types of compounds that may be promising as solar absorbers, transparent conductors, and radiation detectors. Their electronic structure, connection to the crystal geometry, and impact on band-edge dispersion and carrier effective mass are discussed.

cond-mat.mtrl-sci↗

arXiv2018

InSe: a two-dimensional material with strong interlayer coupling

Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention due to large tunability in the band gap (from 1.4 to 2.6 eV) and high carrier mobility. The intriguingly high dependence of band gap on layer thickness may lead to novel device applications, although its origin remains poorly understood, and generally attributed to quantum confinement effect. In this work, we demonstrate via first-principles calculations that strong interlayer coupling may be mainly responsible for this phenomenon, especially in the fewer-layer region, and it could also be an essential factor influencing other material properties of β-InSe and γ-InSe. Existence of strong interlayer coupling manifests itself in three aspects: (i) indirect-to-direct band gap transitions with increasing layer thickness; (ii) fan-like frequency diagrams of the shear and breathing modes of few-layer flakes; (iii) strong layer-dependent carrier mobilities. Our results indicate that multiple-layer InSe may be deserving of attention from FET-based technologies and also an ideal system to study interlayer coupling, possibly inherent in other 2D materials.

cond-mat.mtrl-sci↗

arXiv2017

Design of Lead-Free Inorganic Halide Perovskites for Solar Cells via Cation-Transmutation

Hybrid organic-inorganic halide perovskites with the prototype material of CH$_{3}$NH$_{3}$PbI$_{3}$ have recently attracted intense interest as low-cost and high-performance photovoltaic absorbers. Despite the high power conversion efficiency exceeding 20% achieved by their solar cells, two key issues -- the poor device stabilities associated with their intrinsic material instability and the toxicity due to water soluble Pb$^{2+}$ -- need to be resolved before large-scale commercialization. Here, we address these issues by exploiting the strategy of cation-transmutation to design stable inorganic Pb-free halide perovskites for solar cells. The idea is to convert two divalent Pb$^{2+}$ ions into one monovalent M$^{+}$ and one trivalent M$^{3+}$ ions, forming a rich class of quaternary halides in double-perovskite structure. We find through first-principles calculations this class of materials have good phase stability against decomposition and wide-range tunable optoelectronic properties. With photovoltaic-functionality-directed materials screening, we identify eleven optimal materials with intrinsic thermodynamic stability, suitable band gaps, small carrier effective masses, and low excitons binding energies as promising candidates to replace Pb-based photovoltaic absorbers in perovskite solar cells. The chemical trends of phase stabilities and electronic properties are also established for this class of materials, offering useful guidance for the development of perovskite solar cells fabricated with them.

cond-mat.mtrl-sci↗

arXiv2017

Cu-In Halide Perovskite solar absorbers

The long-term chemical instability and the presence of toxic Pb in otherwise stellar solar absorber APbX$_{3}$ have hindered their large-scale commercialization. Previously explored ways to achieve Pb-free halide perovskites involved replacing Pb$^{2+}$ with other similar M$^{2+}$ cations in ns$^2$ electron configuration, e.g., Sn$^{2+}$ or by Bi$^{3+}$ (plus Ag$^+$), but unfortunately this showed either poor stability (M = Sn) or weakly absorbing oversized indirect gaps (M = Bi), prompting concerns that perhaps stability and good optoelectronic properties might be contraindicated. Herein, we exploit the electronic structure underpinning of classic Cu[In,Ga]Se$_{2}$ (CIGS) chalcopyrite solar absorbers to design Pb-free halide perovskites by transmuting 2Pb to the pair [B$^{IB}$ + C$^{III}$]. The resulting group of double perovskites with formula A$_2$BCX$_6$ (A = K, Rb, Cs; B = Cu, Ag; C = Ga, In; X = Cl, Br, I) benefits from the ionic, yet narrow-gap character of halide perovskites, and at the same time borrows the advantage of the strong and rapidly rising Cu(d)/Se(p) $\rightarrow$ Ga/In(s/p) valence-to-conduction-band absorption spectra known from CIGS. This constitutes a new group of CuIn-based Halide Perovskite (CIHP). Our first-principles calculations guided by such design principles indicate that the CIHPs class has members with clear thermodynamic stability, showing rather strong direct-gap optical transitions, and manifesting a wide-range of tunable gap values (from zero to about 2.5 eV) and combination of light electron and heavy-light hole effective masses. Materials screening of candidate CHIPs then identifies the best-of-class Rb$_2$[CuIn]Cl$_6$, Rb$_2$[AgIn]Br$_6$ and Cs$_2$[AgIn]Br$_6$, having direct band gaps of 1.36, 1.46 and 1.50 eV, and a theoretical spectroscopic limited maximal efficiency comparable to chalcopyrites and CH$_3$NH$_3$PbI$_3$.

cond-mat.mtrl-sci↗