arXiv subjects

Xin-Zhong Yan

Publications and source records attributed to Xin-Zhong Yan.

At least 19 recordsLinked to original sources

arXiv2018

Surface states of gapped electron systems and semi-metals

With a generic lattice model for electrons occupying a semi-infinite crystal with a hard surface, we study the eigenstates of the system with a bulk band gap (or the gap with nodal points). The exact solution to the wave functions of scattering states is obtained. From the scattering states, we derive the criterion for the existence of surface states. The wave functions and the energy of the surface states are then determined. We obtain a connection between the wave functions of the bulk states and the surface states. For electrons in a system with time-reversal symmetry, with this connection, we rigorously prove the correspondence between the change of Kramers degeneracy of the surface states and the bulk time-reversal $Z_2$ invariant. The theory is applicable to systems of (topological) insulators, superconductors, and semi-metals. Examples for solving the edge states of electrons with/without the spin-orbit interactions in graphene with a hard zigzag edge and that in a two-dimensional $d$-wave superconductor with a (1,1) edge are given in appendices.

cond-mat.str-el↗

arXiv2017

Orbital magnetization of interacting Dirac fermions in graphene

We present a formalism to calculate the orbital magnetization of interacting Dirac fermions under a magnetic field. In this approach, the divergence difficulty is overcome with a special limit of the derivative of the thermodynamic potential with respect to the magnetic field. The formalism satisfies the particle-hole symmetry of the Dirac fermions system. We apply the formalism to the interacting Dirac fermions in graphene. The charge and spin orderings and the exchange interactions between all the Landau levels are taken into account by the mean-field theory. The results for the orbital magnetization of interacting Dirac fermions are compared with that of non-interacting cases.

cond-mat.str-el↗

arXiv2017

Integer Quantum Hall Effect of Interacting Electrons in Graphene

By taking into account the charge and spin orderings and the exchange interactions between all the Landau levels, we investigate the integer quantum Hall effect of electrons in graphene using the mean-field theory. At the fillings $ν= 4n+2$ with $n = 0, 1, \cdots$, the system is in the high-symmetry state with the Landau levels four-fold degenerated. We show that with doping the degenerated lowest empty levels can be sequentially filled one level by one level, the filled level is lower than the empty ones because of the symmetry breaking. This result explains the step $Δν$ = 1 in the integer quantized Hall conductivity of the experimental observations. We also present in the supplemental material a high efficient method for dealing with huge number of the Coulomb couplings between all the levels.

cond-mat.str-el↗

arXiv2016

Phase boundary of spin-polarized-current state of electrons in bilayer graphene

Using a four-band Hamiltonian, we study the phase boundary of spin-polarized-current state (SPCS) of interacting electrons in bilayer graphene. The model of spin-polarized-current state has previously been shown to resolve a number of experimental puzzles in bilayer graphene. The phase boundaries of the SPCS with and without the external voltage between the two layers are obtained in this work. An unusual phase boundary where there are two transition temperatures for a given carrier concentration is found at finite external voltage. The physics of this phenomenon is explained.

cond-mat.str-el↗

arXiv2015

Current orderings of interacting electrons in bilayer graphene

By taking into account the possibility of all the intralayer as well as the interlayer current orderings, we derive an eight-band model for interacting electrons in bilayer graphene. With the numerical solution to the model, we show that only the current orderings between the same sublattice sites can exist within the range of the physical interacting strength. This result confirms our previous model of spin-polarized-current phase for the ground-state of interacting electrons in bilayer graphene that resolves a number of experimental puzzles.

cond-mat.str-el↗

arXiv2014

Spin-Polarized-Current State of Electrons in Bilayer Graphene

We propose a model of spin-polarized-current state for electrons in bilayer graphene. The model resolves the puzzles as revealed by experiments that (a) the energy gap $E_{\rm gap}$ of the insulating ground state at the charge neutrality point (CNP) can be closed by a perpendicular electric field of either polarity, (b) $E_{\rm gap}$ increases significantly with increasing the magnetic field $B$, (c) the particle-hole spectrum is asymmetric in the presence of $B$, (d) there is a peak structure in the electric conductivity at small $B$ at the CNP, and (e) there are quantum Hall states stemming from lifting of degeneracy in the lowest Landau level. The model predicts that the ground state of the system close to the CNP is a ferrimagnet at finite $B$ and the Hall current is spin polarized.

cond-mat.str-el↗

arXiv2013

Super-high-efficiency approximate calculation of series sum and discrete Fourier transform

We present a super-high-efficiency approximate computing scheme for series sum and discrete Fourier transform. The summation of a series sum or a discrete Fourier transform is approximated by summing over part of the terms multiplied by corresponding weights. The calculation is valid for the function under the transform being piecewise smooth in the continuum variable. The scheme reduces significantly the requirement for computer memory storage and enhances the numerical computation efficiency without losing accuracy. By comparing with the known results of examples, we show the accuracy and the efficiency of the scheme. The efficiency can be higher than $10^6$ for the examples.

math.NA↗

arXiv2013

Ordered-Current State of Electrons in Bilayer Graphene

Based on the four-band continuum model, we study the ordered-current state (OCS) for electrons in bilayer graphene at the charge neutrality point. The present work resolves the puzzles that (a) the energy gap increases significantly with increasing the magnetic field $B$, (b) the energy gap can be closed by the external electric field of either polarization, and (c) the particle-hole spectrum is asymmetric in the presence of $B$, all these as observed by the experiment. We also present the prediction of the hysteresis energy gap behavior with varying $B$, which explains the existing experimental observation on the electric conductance at weak $B$. The large energy gap of the OCS is shown to originate from the disappearance of Landau levels of $n$ = 0 and 1 states in conduction/valence band. By comparing with the existing models and the experiments, we conclude that the OCS is a possible ground state of electrons in bilayer graphene.

cond-mat.str-el↗

arXiv2012

Possible Broken Inversion and Time-Reversal Symmetry State of Electrons in Bilayer Graphene

With the two-band continuum model, we study the broken inversion and time-reversal symmetry state of electrons with finite-range repulsive interactions in bilayer graphene. With the analytical solution to the mean-field Hamiltonian, we obtain the electronic spectra. The ground state is gapped. In the presence of the magnetic field $B$, the energy gap grows with increasing $B$, in excellently agreement with the experimental observation. Such an energy gap behavior originates from the disappearance of a Landau level of $n$ = 0 and 1 states. The present result resolves explicitly the puzzle of the gap dependence of $B$.

cond-mat.str-el↗

arXiv2012

Absence of broken inversion symmetry phase of electrons in bilayer graphene under charge density fluctuations

On a lattice model, we study the possibility of existence of gapped broken inversion symmetry phase (GBISP) of electrons with long-range Coulomb interaction in bilayer graphene using both self-consistent Hartree-Fock approximation (SCHFA) and the renormalized-ring-diagram approximation (RRDA). RRDA takes into account the charge-density fluctuations beyond the mean field. While GBISP at low temperature and low carrier concentration is predicted by SCHFA, we show here the state can be destroyed by the charge-density fluctuations. We also present a numerical algorithm for calculating the self-energy of electrons with the singular long-range Coulomb interaction on the lattice model.

cond-mat.str-el↗

arXiv2011

Compressibility of Interacting Electrons in Bilayer Graphene

Using the renormalized-ring-diagram approximation, we study the compressibility of the interacting electrons in bilayer graphene. The compressibility is equivalent to the spin susceptibility apart from a constant factor. The chemical potential and the compressibility of the electrons can be significantly altered by an energy gap (tunable by external gate voltages) between the valence and conduction bands. For zero gap and a typical finite gap in the experiments, we show both systems are stable.

cond-mat.str-el↗

arXiv2011

Approximation for discrete Fourier transform and application in study of three-dimensional interacting electron gas

The discrete Fourier transform is approximated by summing over part of the terms with corresponding weights. The approximation reduces significantly the requirement for computer memory storage and enhances the numerical computation efficiency with several orders without loosing accuracy. As an example, we apply the algorithm to study the three-dimensional interacting electron gas under the renormalized-ring-diagram approximation where the Green's function needs to be self-consistently solved. We present the results for the chemical potential, compressibility, free energy, entropy, and specific heat of the system. The ground-state energy obtained by the present calculation is compared with the existing results of Monte Carlo simulation and random-phase approximation.

cond-mat.str-el↗

arXiv2011

Compressibility Instability of Interacting Electrons in Bilayer Graphene

Using the self-consistent Hartree-Fock approximation, we study the compressibility instability of the interacting electrons in bilayer graphene. The chemical potential and the compressibility of the electrons can be significantly altered by an energy gap (tunable by external gate voltages) between the valence and conduction bands. For zero gap case, we show that the homogeneous system is stable. When the gap is finite, the compressibility of the electron system becomes negative at low carrier doping concentrations and low temperature. The phase diagram distinguishing the stable and unstable regions of a typically gapped system in terms of temperature and doping is also presented.

cond-mat.str-el↗

arXiv2010

Nernst effect of Dirac fermions in graphene under weak magnetic field

The derivation for the transport coefficients of an electron system in the presence of temperature gradient and the electric and magnetic fields are presented. The Nernst conductivity and the transverse thermoelectric power of the Dirac fermions in graphene under charged impurity scatterings and weak magnetic field are calculated on basis of the self-consistent Born approximation. The result is compared with so far the available experimental data.

cond-mat.str-el↗

arXiv2009

Thermo-Electric Power of Dirac Fermions in Graphene

On the basis of self-consistent Born approximation for Dirac fermions under charged impurity scatterings in graphene, the theory for calculating the thermo-electric power is developed by using the heat current-current correlation function. The advantage of the present approach is its ability to effectively treat the low doping case where the coherence process involving carriers in both upper and lower bands becomes important. We show that the low temperature behavior of the thermo-electric power as function of the carrier concentration and the temperature observed by the experiments can be successfully explained by our calculation.

cond-mat.str-el↗

arXiv2009

Magnetoconductivity of Dirac fermions in graphene under charged impurity scatterings

On the basis of self-consistent Born approximation, we solve the Bethe-Salpeter matrix equations for Cooperon propagator of the Dirac fermions in graphene under the charged impurity scatterings and a weak external magnetic field. In the absence of the magnetic field, the quantum interference effect in the electric conductivity from the contribution of Cooperon propagator will be studied and possible weak localization in the system is discussed in terms of the sample length and temperature. The magnetoconductivity stemming from the quantum interference effect is calculated, and the obtained results are in good agreement with experimental measurements.

cond-mat.str-el↗

arXiv2009

Hall Coefficient of Dirac Fermions in Graphene under Charged Impurity Scatterings

With a conserving formalism within the self-consistent Born approximation, we study the Hall conductivity of Dirac fermions in graphene under charged impurity scatterings. The calculated inverse Hall coefficient is compared with the experimental data. It is shown that the present calculations for the Hall coefficient and the electric conductivity are in good agreement with the experimental measurements.

cond-mat.str-el↗

arXiv2008

Weak localization and magnetoconductance of Dirac fermions under charged impurities in graphene

On the basis of self-consistent Born approximation, we present a theory of weak localization of Dirac fermions under finite-range scatters in graphene. With an explicit solution to the ground state of singlet pseudospin Cooperons, we solve the Bethe-Salpeter matrix equation for all the singlet and triplet pseudospin Cooperons at long-wave length states by perturbation treatment. The solution to the Cooperon in the presence of the external weak magnetic field is also obtained. We calculate the quantum interference correction to the conductivity and present the comparison with experiments. It is shown that the present calculation for the magnetoconductivity is in good agreement with some of the experimental measurements.

cond-mat.str-el↗