Xinbo Zou | Searcharxiv

arXiv2025

The study of 4H-SiC LGAD after proton radiation

Silicon carbide (SiC) is a promising material for radiation monitoring in harsh environments, due to its low dark current, high breakdown voltage, high thermal conductivity, and radiation hardness.~This work investigates a SiC-based Low-Gain Avalanche Detector (LGAD), named SICAR, with a gain factor of~2 to 3, under 80 MeV proton irradiation up to $1\times 10^{14}$~$n_{eq}/cm^{2}$. Electrical characterization via I-V, C-V, and $α$ particle injection reveals an increase in threshold voltage and a 2 to 4 order of magnitude reduction in leakage current, while charge collection efficiency decreases by about 50\%. X-ray diffraction (XRD) and capacitance deep-level transient spectroscopy (C-DLTS) were employed to characterize the lattice structure and deep-level defects before and after irradiation. Deep-level defect characteristics were integrated into TCAD simulations to develop an electrical degradation model for SiC LGADs. A linear defect-flux relationship is established in the model, showing agreement with experimental results.

physics.ins-det↗

arXiv2022

Timing performance simulation for 3D 4H-SiC detector

To meet high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. SiC detectors could potentially operate in radiation harsh and room temperature environment because of its high thermal conductivity and high atomic displacement threshold energy. 3D structure, which decouples thickness and distance between electrodes, further improves timing performance and radiation hardness of the detector. We developed a simulation software - RASER (RAdiation SEmiconductoR) to simulate the time resolution of planar and 3D 4H-SiC detectors with different parameters and structures, and the reliability of the software is verified by comparing time resolution results of simulation with data. The rough time resolution of 3D 4H-SiC detector was estimated, and the simulation parameters could be used as guideline to 3D 4H-SiC detector design and optimization.

physics.ins-det↗