arXiv subjects

Xing-Qiang Shi

Publications and source records attributed to Xing-Qiang Shi.

17 recordsLinked to original sources

arXiv2026

On the origin of diverse interlayer charge redistribution in transition-metal dichalcogenides

The interlayer quasi-chemical-bonding (QCB) interactions of two-dimensional (2D) layered materials promote the research field of interlayer-engineering and cause interlayer charge density redistributions (ICDRs). The ICDRs have been reported experimentally and theoretically, which show different redistributions, e.g., accumulation, depletion, or a more complicated behavior. The underlying mechanism for the different ICDRs remain to be elucidated. In the current work, via a systematic theoretical study of the ICDRs of transition metal dichalcogenides with different number of d-electrons filling (d^0 TiS2, d^1 NbS2, and d^2 MoS2) in T and H phases, we reveal three mechanisms based on the coexistence of different types of interlayer QCB interactions. Mechanism (1) is from a competition between two types of interlayer interactions: namely, the interlayer interaction between fully occupied energy levels (in short: o-o interaction) depletes electrons in the overlap region while that between occupied and empty levels (o-e interaction) promotes electron accumulation; and the competition between them leads to that the d^0 TiS2 tends to electron accumulation in T phase than in H phase. Mechanism (2), the interlayer interaction between half-filled levels (h-h interaction) promotes the electron accumulation of d^1 NbS2. Mechanism (3), the interlayer interaction of multiple filled-levels of d^2 MoS2 (namely, the multi-level o-o interaction) leads to a more complicated ICDR. The current study provides a unified understanding to the different ICDRs of van der Waals materials and paves the way for further exploration of their electronic properties and applications.

cond-mat.mtrl-sci↗

arXiv2025

Engineering Graphene Nanoribbons via Periodically Embedding Oxygen Atoms

Heteroatom doping is an important method for engineering graphene nanoribbons (GNRs) because of its ability to modify electronic properties by introducing extra electrons or vacancies. However, precisely integrating oxygen atoms into the lattice of GNRs is unexplored, and the resulting electronic properties remain elusive. Here, we achieve the precise embedding of oxygen atoms into the lattice of GNRs via in situ formation of pyrans, synthesizing two types of oxygen-doped GNRs (O-doped chevron-GNR and O-doped chiral (2,1)-GNR). Using scanning tunneling microscopy, non-contact atomic force microscopy, and density functional theory calculations, the atomic structures and electronic properties of O-doped GNRs are determined, demonstrating that both GNRs are direct bandgap semiconductors with different sensitivities to oxygen dopants. Oxygen dopants have a minor impact on the bandgap of chevron-GNR but a significant effect on the bandgap of chiral (2,1)-GNR, which is attributed to the difference in density of states near the Fermi level between substituted intrinsic carbon atoms and their pristine counterparts. Compared with the pristine chiral (2,1)-GNR, the band structure of O-doped chiral (2,1)-GNR exhibits unexpected band edges transition, which is ascribed to sp2-hybridized oxygen atoms which introduces additional electrons to the conduction band of chiral (2,1)-GNR, leading to the upward shift of Fermi surface.

cond-mat.mtrl-sci↗

arXiv2025

Anisotropic Schottky-barrier-height in high-symmetry 2D WSe$_2$: Momentum-space anisotropy

It is usually supposed that only low-symmetry two-dimensional (2D) materials exhibit anisotropy, here we show that high-symmetry 2D semiconductors can show significant anisotropy in momentum space due to the band structure anisotropy in k-space. The basic reason is that different k-points in the Brillouin zone have different symmetry. Using 2D semiconductor WSe$_2$ as the example, we construct lateral heterostructures with zigzag and armchair connections to 2D metal NbSe$_2$, and the electronic structure and contact characteristics of these two connections are analyzed. It is found that both connections exhibit p-type Schottky barrier height (SBH) but the sizes of SBH are very different (of 0.03 eV and 0.50 eV), mainly because the band-edge energies of WSe$_2$ are different along the two mutually perpendicular directions in momentum space. There are two factors contributing to the SBH anisotropy: one is the different interface structure and the other is the band edge anisotropy of the 2D semiconductor WSe$_2$. Since the two interface structures give only a difference in interface potential change by less than 0.1 eV, the SBH variation of ~0.47 eV is mainly from the band structure anisotropy in momentum-space. So, high-symmetry 2D materials may exhibit highly anisotropic electronic states in momentum space and this affects the transport properties. Our current work extends the research field of 2D material anisotropy to 2D materials with high real-space symmetry, thus greatly expands the candidate materials for anisotropic studies and provides new guidance for optimizing the performance of 2D material devices via controlling transport directions.

cond-mat.mtrl-sci↗

arXiv2024

Unified understanding to the rich electronic-structure evolutions of 2D black phosphorus under pressure

The electronic structure evolutions of few-layer black phosphorus (BP) under pressure shows a wealth of phenomena, such as the nonmonotonic change of direct gap at the Γ point, the layer-number dependence, and the distinct responses to normal and hydrostatic pressures. A full and unified understanding to these rich phenomena remains lacking. Here, we provide a unified understanding from the competition between interlayer quasi-bonding (QB) interactions and intralayer chemical bonding interactions. The former decreases while the latter increases the band gap under pressure and the origin can be correlated to different combinations of inter- and intra-layer antibonding or bonding interactions at the band edges. More interestingly, the interlayer QB interactions are a coexistence of two categories of interactions, namely, the coexistence of interactions between bands of the same occupancy (occupied-occupied and empty-empty interactions) and of different occupancies (occupied-empty interaction); and, the overall effect is a four-level interaction, which explains the anomalous interlayer-antibonding feature of the conduction band edge of bilayer BP. Our current study lay the foundation for the electronic structure tuning of two-dimensional (2D) BP, and, our analysis method for multi-energy-level interactions can be applied to other 2D semiconductor homo- and hetero-structures that have occupied-empty interlayer interactions.

cond-mat.mtrl-sci↗

arXiv2023

Elemental topological ferroelectrics and polar metals of few-layer materials

Ferroelectricity can exist in elemental phases as a result of charge transfers between atoms occupying inequivalent Wyckoff positions. We investigate the emergence of ferroelectricity in two-dimensional elemental materials with buckled honeycomb lattices. Various multi-bilayer structures hosting ferroelectricity are designed by stacking-engineering. Ferroelectric materials candidates formed by group IV and V elements are predicted theoretically. Ultrathin Bi films show layer-stacking-dependent physical properties of ferroelectricity, topology, and metallicity. The two-bilayer Bi film with a polar stacking sequence is found to be an elemental topological ferroelectric material. Three and four bilayers Bi films with polar structures are ferroelectric-like elemental polar metals with topological nontrivial edge states. For Ge and Sn, trivial elemental polar metals are predicted. Our work reveals the possibility of design two-dimensional elemental topological ferroelectrics and polar metals by stacking-engineering.

cond-mat.mtrl-sci↗

arXiv2023

Momentum matching and band-alignment type in van der Waals heterostructures: Interfacial effects and materials screening

Momentum-matched type II van der Waals heterostructures (vdWHs) have been designed by assembling layered two-dimensional semiconductors (2DSs) with special band-structure combinations - that is, the valence band edge at the Gamma point (the Brillouin-zone center) for one 2DS and the conduction band edge at the Gamma point for the other [Ubrig et al., Nat. Mater. 19, 299 (2020)]. However, the band offset sizes, band-alignment types, and whether momentum matched or not, all are affected by the interfacial effects between the component 2DSs, such as the quasichemical-bonding (QB) interaction between layers and the electrical dipole moment formed around the vdW interface. Here, based on density-functional theory calculations, first we probe the interfacial effects (including different QBs for valence and conduction bands, interface dipole, and, the synergistic effects of these two aspects) on band-edge evolution in energy and valley (location in the Brillouin zone) and the resulting changes in band alignment and momentum matching for a typical vdWH of monolayer InSe and bilayer WS2, in which the band edges of subsystems satisfy the special band-structure combination for a momentum-matched type II vdWH. Then, based on the conclusions of the studied interfacial effects, we propose a practical screening method for robust momentum-matched type II vdWHs. This practical screening method can also be applied to other band alignment types. Our current study opens a way for practical screening and designing of vdWHs with robust momentum-matching and band alignment type.

cond-mat.mtrl-sci↗

arXiv2023

Copper-based charge transfer multiferroics with a $d^9$ configuration

Multiferroics are materials with a coexistence of magnetic and ferroelectric order allowing the manipulation of magnetism by applications of an electric field through magnetoelectric coupling effects. Here we propose an idea to design a class of multiferroics with a $d^9$ configuration using the magnetic order in copper-oxygen layers appearing in copper oxide high-temperature superconductors by inducing ferroelectricity. Copper-based charge transfer multiferroics SnCuO2 and PbCuO2 having the inversion symmetry breaking $P4mm$ polar space group are predicted to be such materials. The active inner s electrons in Sn and Pb hybridize with O $2p$ states leading the buckling in copper-oxygen layers and thus induces ferroelectricity, which is known as the lone pair mechanism. As a result of the $d^9$ configuration, SnCuO2 and PbCuO2 are charge transfer insulators with the antiferromagnetic ground state of the moment on Cu retaining some strongly correlated physical properties of parent compounds of copper oxide high-temperature superconductors. Our work reveals the possibility of designing multiferroics based on copper oxide high-temperature superconductors.

cond-mat.str-el↗

arXiv2023

From a superconductor NdNiO$_2$ to a Mott multiferroic BiNiO$_2$

Motivated by the recently discovered superconductivity in Sr-doped nickelate oxides NdNiO$_2$, we predict a material BiNiO$_2$ that provides an opportunity to study the intertwined ferroelectricity, metallicity, and magnetism in a crystal with very simple atomic structures. There is a ferroelectric structural transition from the nonpolar phase with the P4/mmm space group to the polar phase with the P4mm space group, which is driven by the lone pair on Bi. Calculations based on the Heyd-Scuseria-Ernzerhof hybrid density functional reveal that both the nonmagnetic and ferromagnetic states are metallic for nonpolar and polar phases, while the lowest energy ground-state for polar BiNiO$_2$ is a Hubbard Mott insulator with the G-type antiferromagnetic spin configurations. As a ferroelectric material with an electric polarization of 0.49 C/m2, it may be possible to control the magnetic order in BiNiO$_2$ by an applied electric field. The replacement of Nd by Bi serves as a connecting link between a high-temperature superconductor and a Mott multiferroic. Our work supports a route towards strongly correlated ferroelectrics.

cond-mat.str-el↗

arXiv2022

Spin field-effect transistors based on massless birefringent Dirac fermions in polar Dirac semimetals

The Datta-Das-type spin field-effect transistor, using a two-dimensional electron gas in a semiconductor heterostructure as a channel, plays a key role in spintronics. Here, we theoretically present a type of spin field-effect transistor based on massless birefringent Dirac fermions in polar Dirac semimetals. The manipulation of spin arises from the existence of the strong spin-orbit coupling, polar space groups, and Dirac cones in a single phase. The oscillatory channel conductance can be controlled by the sign of gate voltage in addition to its magnitude due to the gapless band structures of polar Dirac semimetals. Such spin field-effect transistor provides guidance for the further design of spintronic devices.

cond-mat.mes-hall↗

arXiv2022

Parity-breaking in single-element phases: Ferroelectric-like elemental polar metals

Polar metals based on binary and ternary compounds have been demonstrated in literature. Here, we propose a design principle for ferroelectric-like elemental polar metals and relate it to real materials. The design principle is that, to be an elemental polar metal, atoms should occupy at least two inequivalent Wyckoff positions in a crystal with a polar space group, where inversion symmetry is spontaneously broken. According to this rule, we propose the first class of potential ferroelectric-like elemental polar metals in a distorted α-La-like structure with a polar space group P63mc in which two inequivalent Wyckoff positions 2a (0, 0, z) and 2b (1/3, 2/3, z) are occupied by group-V elements (phosphorus, arsenic, antimony, and bismuth). Analyses based on first-principles calculations indicate that the dynamically stable polar phase results from a lone pair driven polar distortion of the nonploar phase in P63/mmc symmetry where two inequivalent Wyckoff positions 2a (0, 0, 0) and 2c (1/3, 2/3, 1/4) are occupied. This ferroelectric-like transition involves a transition from a metallic state to a semimetallic state. These predicted polar phases are metastable with respect to their corresponding ground phases. Moreover, ionic bonding characters are found due to the inequivalence in Wyckoff positions between group-V atoms. Our work opens a route to single-element parity-breaking phases.

cond-mat.mtrl-sci↗

arXiv2022

Double version of the Rashba and Dresselhaus spin-orbit coupling

The Rashba and Dresselhaus types of spin-orbit coupling are two typical linear coupling forms. We establish the fundamental physics of a model which can be viewed as the double version of the Rashba and Dresselhaus spin-orbit coupling. This model describes the low energy physics of a class of massless Dirac fermions in spin-orbit systems. The physical properties of the massless Dirac fermions are determined by the mathematical relations of spin-orbit coefficients. For equal Rashba and Dresselhauss coupling constants, k-independent eigenspinors and a persistent spin helix combined with massless birefringent Dirac fermions emerge in this model. The spin-orbit coupled systems described by this model have potential technological applications from spintronics to quantum computation.

cond-mat.mes-hall↗

arXiv2021

Interlayer Quasi-Bonding Interactions in 2D Layered Materials: A Classification According to the Occupancy of Involved Energy Bands

Recent studies have revealed that the interlayer interaction in two-dimensional (2D) layered materials is not simply of van der Waals character but could coexist with quasi-bonding character. Here we classify the interlayer quasi-bonding interactions into two main categories (I: homo-occupancy interaction, II: hetero-occupancy interaction) according to the occupancy of the involved energy bands near the Fermi level. Then we investigate the quasi-bonding-interaction-induced band structure evolution of several representative 2D materials based on density functional theory calculations. Further calculations confirm that this classification is applicable to generic 2D layered materials and provides a unified understanding of the total strength of interlayer interaction, which is a synergetic effect of the van der Waals attraction and the quasi-bonding interaction. The latter is stabilizing in main category II and destabilizing in main category I. Thus, the total interlayer interaction strength is relatively stronger in category II and weaker in category I.

cond-mat.mtrl-sci↗

arXiv2021

Hole- and electron-injection driven phase transitions in transition metal dichalcogenides and beyond: A unified understanding

The phase transitions among polymorphic two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted increasing attention for their potential in enabling distinct functionalities in the same material for making integrated devices. Electron-injection to TMDs has been proved to be a feasible way to drive structural phase transition from the semiconducting H-phase to the semimetal dT-phase. In this contribution, based on density-functional theory (DFT) calculations, firstly we demonstrate that hole-injection drives the transition of the H-phase more efficiently to the metallic T-phase than to the semimetallic dT-phase for group VI-B TMDs (MoS2, WS2, and MoSe2, etc.). The origin can be attributed to the smaller work function of the T-phase than that of the dT-phase. Our work function analysis can distinguish the T and dT phases quantitatively while it is challenging for the commonly used crystal field splitting analysis. In addition, our analysis provides a unified understanding for both hole- and electron-injection induced phase transitions for 2D materials beyond TMDs, such as the newly synthesized MoSi2N4 family. Moreover, the hole-driven T-phase transition mechanism can explain the recent experiment of WS2 phase transition by hole-doping with yttrium (Y) atoms. Using 1/3 Y-doped WS2 and MoSe2 as examples, we show that the Mo and W valency increases to 5+. These above findings open up an avenue to obtain the metallic T-phase, which expands the possible stable phases of 2D materials.

cond-mat.mtrl-sci↗

arXiv2019

Uncovering A Two-Dimensional Semiconductor with Intrinsic Ferromagnetism at Room Temperature

Two-dimensional materials have been gaining great attention as they displayed a broad series of electronic properties that ranging from superconductivity to topology. Among them, those which possess magnetism are most desirable, enabling us to manipulate charge and spin simultaneously. Here, based on first-principles calculation, we demonstrate monolayer chromium iodide arsenide (CrIAs), an undiscovered stable two-dimensional material, is an intrinsic ferromagnetic semiconductor with out-of-plane spin magnetization. The indirect bandgaps are predicted to be 0.32 eV for majority spin and 3.31 eV for minority spin, large enough to preserve semiconducting features at room temperature. Its Curie temperature, estimated by Heisenberg model with magnetic anisotropic energy using Monte Carlo method, is as high as 655 K that well above the room temperature, owing to strong direct exchange interaction between chromium d and iodine p orbitals. This work offers the affirmative answer of whether there exists two-dimensional ferromagnetic semiconductor at room temperature. And the practical realization of quantum spintronic devices, which have been suppressed because of lacking suitable room temperature magnetic materials, would embrace a great opportunity.

cond-mat.mtrl-sci↗

arXiv2019

Influences of spin-orbit coupling on Fermi surfaces and Dirac cones in ferroelectric-like polar metals

Based on first-principles calculations and k .p effective models, we report physical properties of ferroelectric-like hexagonal polar metals with P63mc symmetry, which are distinct from those of conventional metals with spatial inversion symmetry. Spin textures exist on the Fermi surface of polar metals (e.g. ternary LiGaGe and elemental polar metal of Bi) and spin-momentum locking exist on accidental Dirac cones on the sixfold rotational axis, due to the spin-orbit coupling and lack of inversion symmetry in polar space group. This effect has potential applications in spin-orbitronics. Dirac points are also predicted in LiGaGe.

cond-mat.mtrl-sci↗

arXiv2019

Super-Exchange Theory for Polyvalent Anion Magnets

The Goodenough-Kanamori-Anderson (GKA) rules have been widely applied for explaining the magnetic properties induced by super-exchange interaction. As conclusions of the super-exchange theory, they reveal the antiferromagnetic (ferromagnetic) ordering along with bond angle of 180 degrees (90 degrees) in the cation-anion-cation interaction path, in which the theory sets a pre-condition that the electronic states of cations in all paths are identical. We observed that the GKA rules are in fact not universal and even invalid to materials containing anions with different valence states, for example, the layered CrOCl crystal (with two valence states of anions: O2- and Cl-). In this study, we propose an extended super-exchange theory (ESET) related to superposed electronic states of cation in a specific path. ESET is capable of predicting not only the sign and relative magnitude of magnetic exchange constants in different cation-anion-cation paths, but also the magnetic ground state. Through our proposed theory, we conclude that the magnetic ordering along with bond angle of 90 degrees in Cr-Cl-Cr path is moderately antiferromagnetic and of 180 degrees in Cr-O-Cr path is strongly ferromagnetic, which are opposite to the contents of GKA rules. Moreover, we clarify that monolayer CrOCl has antiferromagnetic ordering rather than ferromagnetic as reported recently. The reliability of ESET is verified via first-principles calculation and previous experimental report as well, and its universality is also demonstrated. Thus, our theory is powerful to predict the magnetic properties, which makes it possible to design new high Curie temperature two-dimensional semiconducting ferromagnets with polyvalent anion materials.

cond-mat.mtrl-sci↗

arXiv2017

Robust and Pristine Top ological Dirac Semimetal Phase in Pressured Two-Dimensional Black Phosphorous

Very recently, in spite of various efforts in searching for two dimensional topological Dirac semimetals (2D TDSMs) in phosphorene, there remains a lack of experimentally efficient way to activate such phase transition and the underlying mechanism for the topological phase acquisition is still controversial. Here, from first-principles calculations in combination with a band-sorting technique based on k.p theory, a layer-pressure topological phase diagram is obtained and some of the controversies are clarified. We demonstrate that, compared with tuning by external electric-fields, strain or doping by adsorption, hydrostatic pressure can be an experimentally more feasible way to activate the topological phase transition for 2D TDSM acquisition in phosphorene. More importantly, the resultant TDSM state is a pristine phase possessing a single pair of symmetry-protected Dirac cones right at the Fermi level, in startling contrast to the pressured bulk black phosphorous where only a carrier-mixed Dirac state can be obtained. We corroborate that the Dirac points are robust under external perturbation as long as the glide-plane symmetry preserves. Our findings provide a means to realize 2D pristine TDSM in a more achievable manner, which could be crucial in the realization of controllable TDSM states in phosphorene and related 2D materials.

cond-mat.mes-hall↗