arXiv subjects

Xingdan Sun

Publications and source records attributed to Xingdan Sun.

8 recordsLinked to original sources

arXiv2026

An AI-driven robotic system for two-dimensional hetero-assemblies

Nanomaterials stacked on-demand, such as rotationally assembled two-dimensional (2D) van der Waals (vdW) layered compounds, provides a versatile platform for quantum simulation and the exploration of exotic electronic phases. Currently, however, such nanoassemblies remain largely confined to inefficiency, manually operated process, limiting their potential for probing emergent physical phenomena. There is a pressing need in the field for high-precision, automated assembling techniques, especially for the scalable fabrication of 2D twistronic heterostructures. Here, we present an intelligent automation system dedicated to the fabrication of van der Waals stacks, following the state-of-the-art protocol for dry transfer of exfoliated 2D materials. The system further employs metadata generated from each automated stacking procedure to perform reinforcement learning, thereby continuously bettering its performances. As a concrete demonstration, we fabricate twisted bilayer graphene (TBLG) -- known for its challenging preparation -- and exhibit its unconventional superconductivity near the magic angle. Our work may pave the way for high-throughput fabrication of low-dimensional nanomaterials including twistronic heterostructures, where integrating data mining and artificial intelligence can accelerate the discovery of novel physical phenomena.

cond-mat.mes-hall↗

arXiv2024

Probing Berry curvature in magnetic topological insulators through resonant infrared magnetic circular dichroism

Probing the quantum geometry and topology in condensed matter systems has relied heavily on static electronic transport experiments in magnetic fields. Yet, contact-free optical measurements have rarely been explored. Magnetic dichroism (MCD), the nonreciprocal absorption of circular polarized light, was theoretically linked to the quantized anomalous Hall effect in magnetic insulators and can identify the bands and momenta responsible for the underlying Berry Curvature (BC). Detecting BC through MCD faces two challenges: First, the relevant inter-band transitions usually generate MCD in the infrared (IR) range, requiring large samples with high quality. Second, while most magnetic materials are metallic, the relation between MCD and BC in metals remains unclear. Here, we report the observation of MCD in the IR range along with the anomalous Hall effect in thin film MnBi2Te4. Both phenomena emerge with a field-driven phase transition from an antiferromagnet to a canted ferromagnet. By theoretically relating the MCD to the anomalous Hall effect via BC in a metal, we show that this transition accompanies an abrupt onset of BC, signaling a topological phase transition from a topological insulator to a doped Chern insulator. Our density functional theory calculation suggests the MCD signal mainly originates from an optical transition at the Brillouin zone edge, hinting at a potential new source of BC away from the commonly considered {\Gamma} point. Our findings demonstrate a novel experimental approach for detecting BC and identifying the responsible bands and momenta, generally applicable to magnetic materials.

cond-mat.mes-hall↗

arXiv2021

Realization of graphene logics in an exciton-enhanced insulating phase

For two decades, two-dimensional carbon species, including graphene, have been the core of research in pursuing next-generation logic applications beyond the silicon technology. Yet the opening of a gap in a controllable range of doping, whilst keeping high conductance outside of this gapped state, has remained a grand challenge in them thus far. Here we show that, by bringing Bernal-stacked bilayer graphene in contact with an anti-ferromagnetic insulator CrOCl, a strong insulating behavior is observed in a wide range of positive total electron doping $n_\mathrm{tot}$ and effective displacement field $D_\mathrm{eff}$ at low temperatures. Transport measurements further prove that such an insulating phase can be well described by the picture of an inter-layer excitonic state in bilayer graphene owing to electron-hole interactions. The consequential over 1 $\mathrm{G\Omega}$ excitonic insulator can be readily killed by tuning $D_\mathrm{eff}$ and/or $n_\mathrm{tot}$, and the system recovers to a high mobility graphene with a sheet resistance of less than 100 $\mathrm{\Omega}$. It thus yields transistors with "ON-OFF" ratios reaching 10$^{7}$, and a CMOS-like graphene logic inverter is demonstrated. Our findings of the robust insulating phase in bilayer graphene may be a leap forward to fertilize the future carbon computing.

cond-mat.mes-hall↗

arXiv2021

Van der Waals Ferromagnetic Josephson Junctions

Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van der Waals (vdW) crystals remains largely unexplored due to the challenge of making an atomically-sharp interface from their layered structures. Here, we build a vdW ferromagnetic Josephson junction (JJ) by inserting a few-layer ferromagnetic insulator Cr2Ge2Te6 into two layers of superconductor NbSe2. Owing to the remanent magnetic moment of the barrier, the critical current and the corresponding junction resistance exhibit a hysteretic and oscillatory behavior against in-plane magnetic fields, manifesting itself as a strong Josephson coupling state. Through the control of this hysteresis, we can effectively trace the magnetic properties of atomic Cr2Ge2Te6 in response to the external magnetic field. Also, we observe a central minimum of critical current in some thick JJ devices, evidencing the coexistence of 0 and {\pi} phase coupling in the junction region. Our study paves the way to exploring the sensitive probes of weak magnetism and multifunctional building blocks for phase-related superconducting circuits with the use of vdW heterostructures.

cond-mat.mes-hall↗

arXiv2020

In-plane magnetic domains and N\'eel-like domain walls in thin flakes of the room temperature CrTe$_2$ van der Waals ferromagnet

The recent discovery of magnetic van der Waals materials has triggered a wealth of investigations in materials science, and now offers genuinely new prospects for both fundamental and applied research. Although the catalogue of van der Waals ferromagnets is rapidly expanding, most of them have a Curie temperature below 300 K, a notable disadvantage for potential applications. Combining element-selective x-ray magnetic imaging and magnetic force microscopy, we resolve at room temperature the magnetic domains and domains walls in micron-sized flakes of the CrTe$_2$ van der Waals ferromagnet. Flux-closure magnetic patterns suggesting in-plane six-fold symmetry are observed. Upon annealing the material above its Curie point (315 K), the magnetic domains disappear. By cooling back down the sample, a different magnetic domain distribution is obtained, indicating material stability and lack of magnetic memory upon thermal cycling. The domain walls presumably have N\'eel texture, are preferentially oriented along directions separated by 120 degrees, and have a width of several tens of nanometers. Besides microscopic mapping of magnetic domains and domain walls, the coercivity of the material is found to be of a few mT only, showing that the CrTe$_2$ compound is magnetically soft. The coercivity is found to increase as the volume of the material decreases.

cond-mat.mtrl-sci↗

arXiv2019

Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$

Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintronics. Although many emerging new phenomena have been unravelled in 2D electronic systems with spin long-range orderings, the scarcely reported room temperature magnetic vdW material has thus far hindered the related applications. Here, we show that intrinsic ferromagnetically aligned spin polarization can hold up to 316 K in a metallic phase of 1$T$-CrTe$_{2}$ in the few-layer limit. This room temperature 2D long range spin interaction may be beneficial from an itinerant enhancement. Spin transport measurements indicate an in-plane room temperature negative anisotropic magnetoresistance (AMR) in few-layered CrTe$_{2}$, but a sign change in the AMR at lower temperature, with -0.6$\%$ at 300 K and +5$\%$ at 10 K, respectively. This behavior may originate from the specific spin polarized band structure of CrTe$_{2}$. Our findings provide insights into magnetism in few-layered CrTe$_{2}$, suggesting potential for future room temperature spintronic applications of such 2D vdW magnets.

cond-mat.mes-hall↗

arXiv2019

Field-free switching of a Spin-orbit torque device aided by interlayer-coupling induced domain walls

The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits. Instead of introducing effective field into the device, in this work we present an alternative way to achieve the field-free current-driven magnetization switching. By adding Tb/Co multilayers at two ends of the current channel, assisting domain wall is created by interlayer exchange coupling. The field-free deterministic switching is achieved by the movement of the domain wall driven by current. By loop shift measurement we find the driven force exerted on the domain wall is determined by the direction of the in-plane moment in the domain wall. Finally, we modify the device into a synthetic antiferromagnetic structure to solve the problem of reading out signal. The present work broadens the choice of field-free spin-orbit torque device design and clearly depicts the difference between two different switching mechanism.

physics.app-ph↗

arXiv2019

Gate tunable giant anisotropic resistance in ultra-thin GaTe

In crystals, the duplication of atoms often follows different periodicity along different directions. It thus gives rise to the so called anisotropy, which is usually even more pronounced in two dimensional (2D) materials due to the absence of $\textbf{z}$ dimension. Indeed, in the emerging 2D materials, electrical anisotropy has been one of the focuses in recent experimental efforts. However, key understandings of the in-plane anisotropic resistance in low-symmetry 2D materials, as well as demonstrations of model devices taking advantage of it, have proven difficult. Here, we show that, in few-layered semiconducting GaTe, electrical conductivity along $\textbf{x}$ and $\textbf{y}$ directions of the 2D crystal can be gate tuned from a ratio of less than one order to as large as 10$^{3}$. This effect is further demonstrated to yield an anisotropic memory resistor behaviour in ultra-thin GaTe, when equipped with an architecture of van der Waals floating gate. Our findings of gate tunable giant anisotropic resistance (GAR) effect pave the way for potential applications in nano-electronics such as multifunctional directional memories in the 2D limit.

cond-mat.mes-hall↗