arXiv subjects

Xingqiang Zhang

Publications and source records attributed to Xingqiang Zhang.

3 recordsLinked to original sources

arXiv2026

Ultralow and Tunable Thermal Conductivity of Parylene C for Thermal Insulation in Advanced Packaging

Parylene C thin films have significant applications in advanced packaging of microelectronics. Their thermal properties are critical for thermal management of electronic devices. However, a unified understanding of the tunable structure and the corresponding thermal conductivity is still missing. This study investigated parylene C thin films of varying thickness and post-annealing temperatures grown via thermal chemical vapor deposition. The ultralow thermal conductivity of as-deposited parylene C measured by time domain thermoreflectance (TDTR) is 0.10 W/m-K. The thermal conductivity can be tuned by post-annealing. Significant increase in thermal conductivity is observed in the annealed samples (0.18 W/m-K) which induces melting and recrystallization. The results of XRD and polarized Raman spectroscopy show that the enhanced thermal conductivity is due to improved crystalline quality and the change in chain orientations. The measured thermal conductivities of the as-deposited and annealed films are much lower than the values predicted by the Cahill minimum thermal conductivity model, which can be explained by the diffuson-mediated minimum thermal conductivity model. Parylene C is found to possess the lowest thermal conductivity among dense low-k materials. Our work provides guidance for the structural design of ultra-low thermal conductivity polymers and corresponding thermal design of electronics.

cond-mat.mtrl-sci↗

arXiv2026

Ion Implantation Enhanced Nucleation Facilitates Heat Transport across Atomically-Sharp Semiconductor Interfaces

Overheating is a critical bottleneck limiting the performance and reliability of next-generation high-power and high-frequency electronics. Interfacial thermal resistance constitutes a significant portion of the total thermal resistance. In this study, we report an ultrahigh thermal boundary conductance (TBC) of approximately 800 MW/m2-K at the atomically-sharp AlN-SiC interface, achieved through an ion implantation-enhanced nucleation epitaxy technique. This value is among the highest TBC values reported for semiconductor interfaces, confirmed by structural characterizations which show an ultrahigh-quality interface. Atomistic Green Function calculations reveal that elastic phonon transmission dominates the interface, with nearly half of the acoustic modes (0-15 THz) exhibiting near-unity transmission due to the atomically sharp structure. Furthermore, using high-energy-resolution electron energy loss spectroscopy, we probe vibrational properties with nanometer spatial resolution and identify unique interfacial phonon modes connecting the mismatched phonon spectra, confirmed by molecular dynamics simulations. The ultrahigh TBC is attributed to both the high elastic phonon transmission due to the high quality interfaces and the inelastic phonon scattering channel due to interfacial phonon modes. These findings not only advance the fundamental understanding of interfacial thermal transport but also provide a pathway for effective thermal management in emerging electronic devices.

cond-mat.mes-hall↗

arXiv2026

Thermal conductance across bonded SiOx-SiOx interfaces in hybrid bonding process

Hybrid bonding is a pivotal technology for enabling three dimensional integrated circuits. Among the foremost challenges facing 3D IC implementation is thermal management, where a deep understanding of heat conduction across bonded interfaces is essential for addressing heat dissipation and reliability issues. Nevertheless, the thermal conductance of bonded dielectric-dielectric interfaces remains poorly understood. In this study, we employ the low-temperature bonding technique integral to hybrid bonding to fabricate SiO-SiO interfaces and investigate their thermal boundary conductance using time domain thermoreflectance. Structural characterizations show high quality bonded interfaces. By fitting the data with an equivalent multilayer thermal model, we establish a lower limit TBC of 150 MW/m2-K for the SiO-SiO interfaces, which corresponds to a thermal resistance lower than that of a 9.2-nm-thick dielectric layer. These findings offer valuable insights into thermal transport in hybrid-bonded structures and provide critical guidance for the thermal design of advanced packaging solutions.

cond-mat.mes-hall↗