Searcharxiv⌕ Search

arXiv subjects

Xingxing Li

Publications and source records attributed to Xingxing Li.

36 records · Page 2Linked to original sources

Seed-Music: A Unified Framework for High Quality and Controlled Music Generation

We introduce Seed-Music, a suite of music generation systems capable of producing high-quality music with fine-grained style control. Our unified framework leverages both auto-regressive language modeling and diffusion approaches to support two key music creation workflows: controlled music generation and post-production editing. For controlled music generation, our system enables vocal music generation with performance controls from multi-modal inputs, including style descriptions, audio references, musical scores, and voice prompts. For post-production editing, it offers interactive tools for editing lyrics and vocal melodies directly in the generated audio. We encourage readers to listen to demo audio examples at https://team.doubao.com/seed-music "https://team.doubao.com/seed-music".

cs.SD↗

Seed-TTS: A Family of High-Quality Versatile Speech Generation Models

We introduce Seed-TTS, a family of large-scale autoregressive text-to-speech (TTS) models capable of generating speech that is virtually indistinguishable from human speech. Seed-TTS serves as a foundation model for speech generation and excels in speech in-context learning, achieving performance in speaker similarity and naturalness that matches ground truth human speech in both objective and subjective evaluations. With fine-tuning, we achieve even higher subjective scores across these metrics. Seed-TTS offers superior controllability over various speech attributes such as emotion and is capable of generating highly expressive and diverse speech for speakers in the wild. Furthermore, we propose a self-distillation method for speech factorization, as well as a reinforcement learning approach to enhance model robustness, speaker similarity, and controllability. We additionally present a non-autoregressive (NAR) variant of the Seed-TTS model, named $\text{Seed-TTS}_\text{DiT}$, which utilizes a fully diffusion-based architecture. Unlike previous NAR-based TTS systems, $\text{Seed-TTS}_\text{DiT}$ does not depend on pre-estimated phoneme durations and performs speech generation through end-to-end processing. We demonstrate that this variant achieves comparable performance to the language model-based variant and showcase its effectiveness in speech editing. We encourage readers to listen to demos at \url{https://bytedancespeech.github.io/seedtts_tech_report}.

eess.AS↗

DBA-Fusion: Tightly Integrating Deep Dense Visual Bundle Adjustment with Multiple Sensors for Large-Scale Localization and Mapping

Visual simultaneous localization and mapping (VSLAM) has broad applications, with state-of-the-art methods leveraging deep neural networks for better robustness and applicability. However, there is a lack of research in fusing these learning-based methods with multi-sensor information, which could be indispensable to push related applications to large-scale and complex scenarios. In this paper, we tightly integrate the trainable deep dense bundle adjustment (DBA) with multi-sensor information through a factor graph. In the framework, recurrent optical flow and DBA are performed among sequential images. The Hessian information derived from DBA is fed into a generic factor graph for multi-sensor fusion, which employs a sliding window and supports probabilistic marginalization. A pipeline for visual-inertial integration is firstly developed, which provides the minimum ability of metric-scale localization and mapping. Furthermore, other sensors (e.g., global navigation satellite system) are integrated for driftless and geo-referencing functionality. Extensive tests are conducted on both public datasets and self-collected datasets. The results validate the superior localization performance of our approach, which enables real-time dense mapping in large-scale environments. The code has been made open-source (https://github.com/GREAT-WHU/DBA-Fusion).

cs.RO↗

Two-dimensional bimetal-embedded expanded phthalocyanine monolayers: a class of multifunctional materials with fascinating properties

The expanded phthalocyanine (EPc) single-layer sheets with double transition metals (labeled as TM2EPc, TM = Sc-Zn) are predicted to be a new class of two-dimensional (2D) metal-organic materials with a series of favorable functional properties by means of systematic first-principle calculations and molecular dynamics simulations. The strong coordination between metal and EPc substrate accounts for the excellent structural stability. Chemical bonding analysis has demonstrated the absence of TM-TM bonding. Each metal center is isolated, but connected to the organic framework by four 2c-2e TM-N σ-bonds to form an extended 2D network. Unexpectedly, it is found that the V2EPc is an antiferromagnetic metal with Dirac cone, while Cr2EPc exhibits ferromagnetic Dirac half-metallicity, which is not common in 2D materials. Excitingly, the ferromagnetic Cr2EPc and antiferromagnetic Mn2- and Fe2-EPc have high magnetic transition temperatures of 223, 217, and 325 K, respectively, which are crucial for the practical applications of spintronics. Cr2EPc can maintain the Dirac half-metallicity under -6 % ~ 2 % biaxial strains, and Fe2EPc can transform from semiconductor to half-metal by applying -6 % ~ -10 % compressive strains. Additionally, the TM2EPc monolayers exhibit a full response to visible light and some materials have strong absorption in the ultraviolet and infrared regions in addition to visible light, showing extraordinary solar light-harvesting ability. Notably, the designed type-II heterojunctions Fe2EPc/SnC, Co2EPc/GeS, and Ni2EPc/2H-WSe2 have high power conversion efficiency (PCE > 15%), especially the PCE of Ni2EPc/2H-WSe2 reaches 25.19%, which has great potential in solar cell applications. All these desired properties render 2D TM2EPc monolayers promising candidates for future applications in nanoelectronics, spintronics,optoelectronics, and photovoltaic devices.

cond-mat.mtrl-sci↗

Ground-VIO: Monocular Visual-Inertial Odometry with Online Calibration of Camera-Ground Geometric Parameters

Monocular visual-inertial odometry (VIO) is a low-cost solution to provide high-accuracy, low-drifting pose estimation. However, it has been meeting challenges in vehicular scenarios due to limited dynamics and lack of stable features. In this paper, we propose Ground-VIO, which utilizes ground features and the specific camera-ground geometry to enhance monocular VIO performance in realistic road environments. In the method, the camera-ground geometry is modeled with vehicle-centered parameters and integrated into an optimization-based VIO framework. These parameters could be calibrated online and simultaneously improve the odometry accuracy by providing stable scale-awareness. Besides, a specially designed visual front-end is developed to stably extract and track ground features via the inverse perspective mapping (IPM) technique. Both simulation tests and real-world experiments are conducted to verify the effectiveness of the proposed method. The results show that our implementation could dramatically improve monocular VIO accuracy in vehicular scenarios, achieving comparable or even better performance than state-of-art stereo VIO solutions. The system could also be used for the auto-calibration of IPM which is widely used in vehicle perception. A toolkit for ground feature processing, together with the experimental datasets, would be made open-source (https://github.com/GREAT-WHU/gv_tools).

cs.RO↗

Two-Dimensional Semiconducting Metal Organic Frameworks with Auxetic Effect, Room Temperature Ferrimagnetism, Chiral Ferroelectricity, Bipolar Spin Polarization and Topological Nodal Lines/Points

Two-dimensional (2D) semiconductors integrated with two or more functions are the cornerstone for constructing multifunctional nanodevices, but remain largely limited. Here, by tuning the spin state of organic linkers and the symmetry/topology of crystal lattice, we predict a class of unprecedented multifunctional semiconductors in 2D Cr(II) five-membered heterocyclic metal organic frameworks that simultaneously possess auxetic effect, room temperature ferrimagnetism, chiral ferroe-lectricity, electrically reversible spin polarization and topological nodal lines/points. Taking 2D Cr(TDZ)$_2$ (TDZ=1.2.5-thiadiazole) as an exemplification, the auxetic effect is produced by the anti-tetra-chiral lattice structure. The high temperature ferrimagnetism originates from the strong d-p direct magnetic exchange interaction between Cr cations and TDZ doublet radical anions. Meanwhile, the clockwise-counterclockwise alignment of TDZ' dipoles results in unique 2D chiral ferroelectricity with atomic-scale vortex-antivortex states. 2D Cr(TDZ)$_2$ is an intrinsic bipolar magnetic semiconductor where half-metallic conduction with switchable spin-polarization direction can be induced by applying a gate voltage. Besides, the symmetry of the little group C$_4$ of lattice structure endows 2D Cr(TDZ)$_2$ with topological nodal lines and a quadratic nodal point in the Brillouin zone near the Fermi level.

cond-mat.mtrl-sci↗

Ferromagnetic Negative Charge-Transfer Insulator: from Theoretical Proposal to Material Realization

Here we propose another type of ferromagnetic semiconductors: ferromagnetic negative charge-transfer insulator (FNCTI). In FNCTI, the negative charge-transfer states strongly enhance the ferromagnetic (FM) exchange interactions and the orbital hybridization gap permits the magnetic molecular orbitals as the underlying magnetic units rather than local atomic orbitals. Thus the FM exchange interactions are rather strong and decay slowly due to the large spearding of magnetic molecular orbitals. This is distinct from the superexchange mechanism where FM exchange interactions are quite weak as summarized in the well-known Goodenough-Kanamori-Anderson semi-empirical rules.Through first-principle calculations with the hybrid functional, PbO-type CrAs monolayer is mapped out to be a FNCTI, which possesses a band gap $\sim$ 0.35 eV, FM nearest-/next-nearest-neighbor exchange coupling strength $\sim$ 57/40 meV, and a high $T_c$ $\sim$ 1500 K respectively. It is believed that the existence of FNCTI validates the long-pending hypothesis by D. I. Khomskii and G. A. Sawatzky in 1997 [Solid State Commun. 102, 87 (1997)].

cond-mat.str-el↗

High-throughput computational screening for bipolar magnetic semiconductors

Searching ferromagnetic semiconductor materials with electrically controllable spin polarization is a long-term challenge for spintronics. Bipolar magnetic semiconductors (BMS), with valence and conduction band edges fully spin-polarized in different spin directions, show great promise in this aspect because the carrier's spin polarization direction can be easily tuned by voltage gate. Here, we propose a standard high-throughput computational screening scheme for searching BMS materials. The application of this scheme to the Materials Project database gives 11 intrinsic BMS materials (1 experimental and 10 theoretical) from nearly 40000 structures. Among them, a room temperature BMS Li2V3TeO8 (mp-771246) is discovered with a Curie temperature of 478K. Moreover, the BMS feature can be maintained well when cutting the bulk Li2V3TeO8 into (001) nanofilms for realistic applications. This work provides a feasible solution for discovering novel intrinsic BMS materials from various crystal structure databases, paving the way for realizing electric-field controlled spintronic devices.

cond-mat.mtrl-sci↗

Thickness Dependent Magnetic Transition in Few Layer 1T Phase CrTe2

Room temperature two-dimensional (2D) ferromagnetism is highly desired in practical spintronics applications. Recently, 1T phase CrTe2 (1T-CrTe2) nanosheets with five and thicker layers have been successfully synthesized, which all exhibit the properties of ferromagnetic (FM) metals with Curie temperatures around 305 K. However, whether the ferromagnetism therein can be maintained when continuously reducing the nanosheet's thickness to monolayer limit remains unknown. Here, through first-principles calculations, we explore the evolution of magnetic properties of 1 to 6 layers CrTe2 nanosheets and several interesting points are found: First, unexpectedly, monolayer CrTe2 prefers a zigzag antiferromagnetic (AFM) state with its energy much lower than that of FM state. Second, in 2 to 4 layers CrTe2, both the intralayer and interlayer magnetic coupling are AFM. Last, when the number of layers is equal to or greater than five, the intralayer and interlayer magnetic coupling become FM. Theoretical analysis reveals that the in-plane lattice contraction of few layer CrTe2 compared to bulk is the main factor producing intralayer AFM-FM magnetic transition. At the same time, as long as the intralayer coupling gets FM, the interlayer coupling will concomitantly switch from AFM to FM. Such highly thickness dependent magnetism provides a new perspective to control the magnetic properties of 2D materials.

cond-mat.mtrl-sci↗

Two-Dimensional Bipolar Magnetic Semiconductor with High Curie Temperature and Electrically Controllable Spin Polarization Realized in Exfoliated Cr(pyrazine)$_2$ Monolayer

Exploring two-dimensional (2D) magnetic semiconductors with room temperature magnetic ordering and electrically controllable spin polarization is a highly desirable but challenging task for nanospintronics. Here, through first principles calculations, we propose to realize such a material by exfoliating the recently synthesized organometallic layered crystal Li$_{0.7}$[Cr(pyz)$_2$]Cl$_{0.7}$0.25$\cdot$(THF) (pyz = pyrazine, THF = tetrahydrofuran) [Science 370, 587 (2020)]. The feasibility of exfoliation is confirmed by the rather low exfoliation energy of 0.27 J/m$^2$, even smaller than that of graphite. In exfoliated Cr(pyz)$_2$ monolayer, each pyrazine ring grabs one electron from the Cr atom to become a radical anion, then a strong $d$-$p$ direct exchange magnetic interaction emerges between Cr cations and pyrazine radicals, resulting in room temperature ferrimagnetism with a Curie temperature of 342 K. Moreover, Cr(pyz)$_2$ monolayer is revealed to be an intrinsic bipolar magnetic semiconductor where electrical doping can induce half-metallic conduction with controllable spin-polarization direction.

cond-mat.mtrl-sci↗

Strong Edge Magnetism and Tunable Energy Gaps in Zigzag Graphene Quantum Dots with High Stability

Graphene is a nonmagnetic semimetal and cannot be directly used as electronic or spintronic devices. We demonstrate that graphene quantum dots (GQDs) can exhibit strong edge magnetism and tunable energy gaps due to the presence of localized edge states. By using large-scale first principle density functional theory (DFT) calculations and detailed analysis based on model Hamiltonians, we can show that the zigzag edge states in GQDs become much stronger and more localized as the system size increases. The enhanced edge states induce strong electron-electron interactions along the edges of GQDs, ultimately resulting in a magnetic phase transition from nonmagnetic to intra-edge ferromagnetic and inter-edge antiferromagnetic, when the diameter is larger than 4.5 nm. Our analysis shows that the inter-edge superexchange interaction of antiferromagnetic states between two nearest-neighbor zigzag edges in GQDs is much stronger than that exists between two parallel zigzag edges in GQDs and graphene nanoribbons. Furthermore, such strong and localized edge states also induce GQDs semiconducting with tunable energy gaps, mainly controlled by adjusting the system size. Our results show that the quantum confinement effect, inter-edge superexchange (antiferromagnetic), and intra-edge direct exchange (ferromagnetic) interactions are crucial for the electronic and magnetic properties of zigzag GQDs at the nanoscale.

cond-mat.mtrl-sci↗

BP_5 Monolayer with Multiferroicity and Negative Poisson's Ratio: A Prediction by Global Optimization Method

Based on variable components global optimization algorithm, we predict a stable two-dimensional (2D) phase of boron phosphide with 1:5 stoichiometry, i.e. boron pentaphosphide (BP_5) monolayer, which has a lower formation energy than that of the commonly believed graphitic phase (g-BP). BP_5 monolayer is a multiferroic material with coupled ferroelasticity and ferroelectricity. The predicted reversible strain is up to 41.41%, which is the largest among all reported ferroelastic materials. Due to the non-centrosymmetric structure and electronegativity differences between boron and phosphorus atoms, an in-plane spontaneous polarization of 326.0 pC/m occurs in BP_5. Moreover, the recently hunted negative Poisson's ratio property, is also observed in BP_5. As an indirect semiconductor with a band gap of 1.34 eV, BP_5 displays outstanding optical and electronic properties, for instance strongly anisotropic visible-light absorption and high carrier mobility. The rich and extraordinary properties of BP_5 make it a potential nanomaterial for designing electromechanical or optoelectronic devices, such as nonvolatile memory with conveniently readable/writeable capability. Finally, we demonstrate that AlN (010) surface could be a suitable substrate for epitaxy growth of BP_5 monolayer.

cond-mat.mtrl-sci↗

δ-phosphorene: a two dimensional material with high negative Poisson's ratio

As a basic mechanical parameter, Poisson's ratio (ν) measures the mechanical responses of solids against external loads. In rare cases, materials have a negative Poisson's ratio (NPR), and present an interesting auxetic effect. That is, when a material is stretched in one direction, it will expand in the perpendicular direction. To design modern nanoscale electromechanical devices with special functions, two dimensional (2D) auxetic materials are highly desirable. In this work, based on first principles calculations, we rediscover the previously proposed δ-phosphorene (δ-P) nanosheets [Jie Guan et al., Phys. Rev. Lett. 2014, 113, 046804] are good auxetic materials with a high NPR. The results show that the Young's modulus and Poisson's ratio of δ-P are all anisotropic. The NPR value along the grooved direction is up to -0.267, which is much higher than the recently reported 2D auxetic materials. The auxetic effect of δ-P originated from its puckered structure is robust and insensitive to the number of layers due to weak interlayer interactions. Moreover, δ-P possesses good flexibility because of its relatively small Young's modulus and high critical crack strain. If δ-P can be synthesized, these extraordinary properties would endow it great potential in designing low dimensional electromechanical devices.

cond-mat.mtrl-sci↗

A many-body GW+BSE investigation of electronic and optical properties of C2N

A newly synthesized layered material C2N was investigated based on many- body perturbation theory using GW plus Bethe-Salpeter equation approach. The electronic band gap was determined to be ranging from 3.75 to 1.89 eV from monolayer to bulk. Significant GW quasiparticle corrections, of more than 0.9 eV, to the Kohn-Sham band gaps from the local density approximation (LDA) calculations are found. Strong excitonic effects play a crucial role in optical properties. We found large binding energies of greater than 0.6 eV for bound excitons in few-layer C2N, while it is only 0.04 eV in bulk C2N. All the structures exhibit strong and broad optical absorption in the visible light region, which makes C2N a promising candidate for solar energy conversion, such as photocatalytic water splitting.

cond-mat.mtrl-sci↗

Single layer of MX3 (M=Ti, Zr; X=S, Se, Te): a new platform for nano-electronics and optics

A serial of two dimensional titanium and zirconium trichalcogenides nanosheets MX3 (M=Ti, Zr; X=S, Se, Te) are investigated based on first-principles calculations. The evaluated low cleavage energy indicates that stable two dimensional monolayers can be exfoliated from their bulk crystals in experiment. Electronic studies reveal very rich electronic properties in these monolayers, including metallic TiTe3 and ZrTe3, direct band gap semiconductor TiS3 and indirect band gap semiconductors TiSe3, ZrS3 and ZrSe3. The band gaps of all the semiconductors are between 0.57~1.90 eV, which implies their potential applications in nano-electronics. And the calculated effective masses demonstrate highly anisotropic conduction properties for all the semiconductors. Optically, TiS3 and TiSe3 monolayers exhibit good light absorption in the visible and near-infrared region respectively, indicating their potential applications in optical devices. In particular, the highly anisotropic optical absorption of TiS3 monolayer suggests it could be used in designing nano optical waveguide polarizers.

cond-mat.mtrl-sci↗

Electrical Control of Carriers Spin Orientation in FeVTiSi Heusler Alloy

The direct control of carriers spin by electric field under room temperature is one of the most important challenges in the field of spintronics. For this purpose, we here propose a quaternary Heusler alloy FeVTiSi. Based on first principles calculations, FeVTiSi alloy is found to be an intrinsic bipolar magnetic semiconductor in which the valence band and conduction band approach the Fermi level through opposite spin channels. Thus FeVTiSi alloy can conduct completely spin-polarized currents with tunable spin-polarization direction simply by applying a gate voltage. Furthermore, by Monte Carlo simulations based on the classical Heisenberg Hamiltonian, the Curie temperature of FeVTiSi alloy is predicted to be as high as 1293 K, far above the room temperature. The bipolar magnetic semiconducting character and the high Curie temperature endow the FeVTiSi alloy great potentials in developing electrically controllable spintronic devices working at room temperature.

cond-mat.mtrl-sci↗

Control of Spin in La(Mn,Zn)AsO Alloy by Carrier Doping

The control of spin without magnetic field is one of challenges in developing spintronic devices. In an attempt to solve this problem, we proposed a novel hypothetic LaMn0.5Zn0.5AsO alloy from two experimentally synthesized rare earth element transition metal arsenide oxides, i.e. LaMnAsO and LaZnAsO. On the basis of the first-principles calculations with strong-correlated correction, we found that the LaMn0.5Zn0.5AsO alloy is an antiferromagnetic semiconductor at ground state, while bipolar magnetic semiconductor at ferromagnetic state. Both electron and hole doping in the LaMn0.5Zn0.5AsO alloy induces the transition from antiferromagnetic to ferromagnetic, as well as semiconductor to half metal. In particular, the spin-polarization direction is switchable depending on the doped carrier's type. As carrier doping can be realized easily in experiment by applying a gate voltage, the LaMn0.5Zn0.5AsO alloy stands for a promising spintronic material to generate and control the spin-polarized carriers with electric field.

cond-mat.mtrl-sci↗

Bipolar Magnetic Semiconductors: A New Class of Spintronics Materials

Electrical control of spin polarization is very desirable in spintronics, since electric field can be easily applied locally in contrast with magnetic field. Here, we propose a new concept of bipolar magnetic semiconductor (BMS) in which completely spin-polarized currents with reversible spin polarization can be created and controlled simply by applying a gate voltage. This is a result of the unique electronic structure of BMS, where the valence and conduction bands possess opposite spin polarization when approaching the Fermi level. Our band structure and spin-polarized electronic transport calculations on semi-hydrogenated single-walled carbon nanotubes confirm the existence of BMS materials and demonstrate the electrical control of spin-polarization in them.

cond-mat.mtrl-sci↗