arXiv subjects

Xingxu Yan

Publications and source records attributed to Xingxu Yan.

8 recordsLinked to original sources

arXiv2026

Subwavelength Coherent Scaling of High-Order Nonlinear Light Generation in Bulk Monolayer MoS2 Thin Films

Monolayer transition metal dichalcogenides (e.g., MoS2) exhibit exceptionally large optical nonlinearities for high-order nonlinear light generation (NLG), yet their inherent atomic thickness fundamentally limits light-matter interactions and thus conversion efficiency. Here, we overcome this intrinsic trade-off using a solution-processed bulk monolayer MoS2 (BM-MoS2) architecture composed of electronically decoupled MoS2 monolayers separated by organic interlayers. This layered superstructure preserves the exceptional intrinsic nonlinear susceptibility of monolayer MoS2 while enabling scalable interaction length. In the subwavelength regime, the NLG scales nearly quadratically with layer number (N1.8), confirming the constructive buildup of nonlinear fields across stacked monolayers. As a result, a 100-nm-thick BM-MoS2 thin film exhibits colossal high-order NLG, including four-wave mixing and high-harmonic generation. The generated nonlinear beam is directly visible to the naked eye and exhibits broad spectral tunability spanning approximately 1000 nm in the mid-IR, enabling mid-IR-to-visible upconversion spectroscopy for resolving molecular vibrational fingerprints. By uniting monolayer-scale nonlinear susceptibility with bulk interaction length and coherent field buildup, BM-MoS2 establishes a thin-film platform for ultra-compact and substrate-agnostic nonlinear photonic systems beyond the constraints of conventional single crystals.

physics.optics↗

arXiv2024

Emergent Moiré fringes in direct-grown quasicrystal

Quasicrystals represent a category of rarely structured solids that challenge traditional periodicity in crystal materials. Recent advancements in the synthesis of two-dimensional (2D) van der Waals materials have paved the way for exploring the unique physical properties of these systems. Here, we report on the synthesis of 2D quasicrystals featuring 30° alternating twist angles between multiple graphene layers, using chemical vapor deposition (CVD). Strikingly, we observed periodic Moiré patterns in the quasicrystal, a finding that has not been previously reported in traditional alloy-based quasicrystals. The Moiré periodicity, varying with the parity of the constituent layers, aligns with the theoretical predictions that suggest a stress cancellation mechanism in force. The emergence of Moiré fringes is attributed to the spontaneous mismatched lattice constant in the oriented graphene layers, proving the existence of atomic relaxation. This phenomenon, which has been largely understudied in graphene systems with large twist angles, has now been validated through our use of scanning transmission electron microscopy (STEM). Our CVD-grown Moiré quasicrystal provides an ideal platform for exploring the unusual physical properties that arise from Moiré periodicity within quasicrystals.

cond-mat.mtrl-sci↗

arXiv2024

Atomic-scale tunable phonon transport at tailored grain boundaries and Their Impact on Thermal Conductivity

Grain boundaries (GBs) strongly influence thermal transport in crystalline solids by disrupting lattice periodicity and scattering phonons. Due to the atomic-level disorder and structural complexity, a fundamental understanding of how specific GB geometries regulate nanoscale phonon behavior and macroscopic thermal conductivity has remained elusive. Here, using emerging atomic-resolution vibrational spectroscopy, we directly correlate GB structure, defect-specific vibrational states, and thermal transport in bicrystal strontium titanate with controlled tilt and twist angles. The phonon characterizations and thermal conductivity data reveal two distinct regimes, where low-angle tilt GBs (2deg, 6deg, 10deg) substantially modulate phonon populations and mode frequencies, resulting in pronounced changes in thermal conductivity, whereas high-angle tilt GBs (22deg, 36deg) exhibit weak conductivity variation due to saturated structural disorder and scattering. In contrast, twist GBs introduce periodic defect motifs that only locally tailor phonon transport. Our results suggest tilt and twist angles as complementary knobs for coarse and fine control of phonon propagation and cross-GB thermal transport, providing a predictive framework for thermal engineering in materials.

cond-mat.mes-hall↗

arXiv2024

Inelastic electron scattering at large angles: the phonon polariton contribution

We explore the inelastic electron scattering in SrTiO3, PbTiO3, and SiC in their phonon energy range, challenging the assumption that phonon polaritons are excluded at large angles in high-resolution transmission electron energy-loss spectroscopy. We demonstrate that through multiple scattering, the electron beam can excite both phonons and phonon polaritons, and the relative proportion of each varies depending on the structure factor and scattering angle. Integrating dielectric theory, density functional theory, and multi-slice simulations, we provide a comprehensive framework for understanding these interactions in materials with polar optical phonons.

cond-mat.mtrl-sci↗

arXiv2023

Real-Space Visualization of Frequency-Dependent Anisotropy of Atomic Vibrations

The underlying dielectric properties of materials, intertwined with intriguing phenomena such as topological polariton modes and anisotropic thermal conductivities, stem from the anisotropy in atomic vibrations. Conventionally, X-ray diffraction techniques have been employed to estimate thermal ellipsoids of distinct elements, albeit lacking the desired spatial and energy resolutions. Here we introduce a novel approach utilizing the dark-field monochromated electron energy-loss spectroscopy for momentum-selective vibrational spectroscopy, enabling the cartographic delineation of variations of phonon polarization vectors. By applying this technique to centrosymmetric cubic-phase strontium titanate, we successfully discern two types of oxygen atoms exhibiting contrasting vibrational anisotropies below and above 60 meV due to their frequency-linked thermal ellipsoids. This method establishes a new pathway to visualize phonon eigenvectors at specific crystalline sites for diverse elements, thus delving into uncharted realms of dielectric, optical, and thermal property investigations with unprecedented spatial resolutions.

cond-mat.mtrl-sci↗

arXiv2021

Experimental Observation of Localized Interfacial Phonon Modes

Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic interfacial details, which are found critical to correctly describing thermal boundary conductance (TBC). Recent theoretical studies predicted the existence of localized phonon modes at the interface which can play an important role in understanding interfacial thermal transport. However, experimental validation is still lacking. Through a combination of Raman spectroscopy and high-energy resolution electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope, we report the first experimental observation of localized interfacial phonon modes at ~12 THz at a high-quality epitaxial Si-Ge interface. These modes are further confirmed using molecular dynamics simulations with a high-fidelity neural network interatomic potential, which also yield TBC agreeing well with that measured from time-domain thermoreflectance (TDTR) experiments. Simulations find that the interfacial phonon modes have obvious contribution to the total TBC. Our findings may significantly contribute to the understanding of interfacial thermal transport physics and have impact on engineering TBC at interfaces in applications such as electronics thermal management and thermoelectric energy conversion.

cond-mat.mes-hall↗

arXiv2021

Capturing 3D atomic defects and phonon localization at the 2D heterostructure interface

The 3D local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic and topological quantum properties, but have thus far eluded any direct experimental determination. Here we determine the 3D local atomic positions at the interface of a MoS2-WSe2 heterojunction with picometer precision and correlate 3D atomic defects with localized vibrational properties at the epitaxial interface. We observe point defects, bond distortion, atomic-scale ripples and measure the full 3D strain tensor at the heterointerface. By using the experimental 3D atomic coordinates as direct input to first principles calculations, we reveal new phonon modes localized at the interface, which are corroborated by spatially resolved electron energy-loss spectroscopy. We expect that this work will open the door to correlate structure-property relationships of a wide range of heterostructure interfaces at the single-atom level.

cond-mat.mtrl-sci↗

arXiv2018

Gate-Induced Interfacial Superconductivity in 1T-SnSe2

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. Here, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc around 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on 1) a 2D Tinkham description of the angle-dependent upper critical field, 2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane approaching zero temperature was found to be 2-3 times higher than the Pauli limit, which might be related to an electric field-modulated spin-orbit interaction. Such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.

cond-mat.supr-con↗