Xinhui Zhan | Searcharxiv

arXiv2022

Evolution of Superatomic-Charge-density-wave and Superconductivity under Pressure in AuTe$_2$Se$_{4/3}$

Superatomic crystal is a class of hierarchical materials composed of atomically precise clusters assembled via van der Waals or covalent-like interactions. AuTe$_2$Se$_{4/3}$, an all-inorganic superatomic superconductor exhibiting superatomic-charge-density-wave (S-CDW), provides a first platform to study the response of their collectively quantum phenomenon to the external pressure in superatomic crystals. We reveal a competition between S-CDW and superconductivity using cutting-edge measurements on thin flakes at low pressures. Prominently, the pressure modulation of S-CDW ordering is 1$\sim$2 order of magnitudes (0.1 GPa) lower than that of conventional atomic superconductors. As pressure increases to 2.5 GPa, the $T_{\mathrm{CDW}}$ is suppressed and the superconducting transition temperature ($T_{\mathrm{c}}$) is firstly enhanced, and reaches the maximum then quenches with increasing pressure. Above 7.3 GPa, a second superconducting phase emerges, and then a three-fold enhancement in the transition temperature ($T_{\mathrm{c}}$) happens. Analyses of the crystal structure and theoretical calculations suggest a pressure-mediated switch of the conduction channel from the $a$- to the $b$-axis occur, followed by a dimensional crossover of conductivity and the Fermi surface from 2D to 3D.

cond-mat.supr-con↗

arXiv2021

Highly-robust reentrant superconductivity in CsV3Sb5 under pressure

Here we present the superconducting property and structural stability of kagome CsV3Sb5 under in-situ high pressures. For the initial SC-I phase, its Tc is quickly enhanced from 3.5 K to 7.6 K and then totally suppressed at P~10 GPa. Further increasing the applied pressures, an SC-II phase emerges at P~15 GPa and persists up to 100 GPa. The Tc rapidly increases to the maximal value of 5.2 K at P=53.6 GPa and rather slowly decreases to 4.7 K at P=100 GPa. A two-dome-like variation of Tc in CsV3Sb5 is concluded here. The Raman measurements demonstrate that weakening of E2g model and strengthening of A1g model occur without phase transition as entering the SC-II phase, which is supported by the results of phonon spectra calculations. Electronic structure calculations reveal that exertion of pressure may bridge the gap of topological surface nontrivial states near EF, i. e. Z2 invariant. Meanwhile, it enlarges Fermi surface significantly, consistent with the increased carrier density. The findings here point out the change of electronic structure and strengthened electron-phonon coupling should be responsible for the pressure-induced reentrant SC.

cond-mat.supr-con↗