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Xinlu Li

Publications and source records attributed to Xinlu Li.

16 recordsLinked to original sources

A Layer-wise Analysis of Supervised Fine-Tuning

While critical for alignment, Supervised Fine-Tuning (SFT) incurs the risk of catastrophic forgetting, yet the layer-wise emergence of instruction-following capabilities remains elusive. We investigate this mechanism via a comprehensive analysis utilizing information-theoretic, geometric, and optimization metrics across model scales (1B-32B). Our experiments reveal a distinct depth-dependent pattern: middle layers (20\%-80\%) are stable, whereas final layers exhibit high sensitivity. Leveraging this insight, we propose Mid-Block Efficient Tuning, which selectively updates these critical intermediate layers. Empirically, our method outperforms standard LoRA up to 10.2\% on GSM8K (OLMo2-7B) with reduced parameter overhead, demonstrating that effective alignment is architecturally localized rather than distributed. The code is publicly available at https://anonymous.4open.science/r/base_sft.

cs.LG

Longitudinal transport spin polarization of spin degenerate antiferromagnets

A vital goal in spintronics is the efficient electrical generation of spin currents, a pursuit that has recently focused on using antiferromagnets (AFMs) as spin current sources. It has been demonstrated that antiferromagnets with broken PT symmetry (parity + time reversal) can efficiently generate longitudinal and transverse spin currents. At the same time, it has been generally thought that antiferromagnets with PT symmetry (PT-AFMs) forbid the longitudinal spin polarization due to their spin-degenerate band structure. Here, in contrast to this common expectation, we show, using theoretical analysis based on magnetic point group symmetry, that most PT-AFMs can generate longitudinal spin currents due to spin-orbit coupling. Using density-functional theory, we calculate the longitudinal spin conductivity of representative PT-AFMs, L10-MnPt and Mn2Au, and show that its magnitude is comparable to that of their PT-broken counterparts. Our symmetry-enabled classification of antiferromagnets and theoretical results for the longitudinal spin conductivity in representative PT-AFMs expands our understanding of spin transport and shows the possibility of robust spin-current generation in a broad range of spin-degenerate antiferromagnets.

cond-mat.mtrl-sci

Nonrelativistic spin-splitting multiferroic antiferromagnet and compensated ferrimagnet with zero net magnetization

Spin-splitting antiferromagnets with spin-polarized band structures in momentum space have garnered intensive research attention due to their zero net magnetic moments, ultras fast spin dynamics as conventional antiferromagnets, and spin-polarized transport properties akin to ferromagnets, making them promising candidates for antiferromagnetic spintronics. However, unlike spin-torque switching of ferromagnets by electric current, efficient electric control of spin-splitting antiferromagnetic order remains challenges. In this work, we identify prototypes of multiferroic spin-splitting antiferromagnets, including BiFeO3, Fe2Mo3O8 and compensated ferrimagnet GaFeO3 with ferroelectric polarization as well as spin-polarized electronic structures. We establish design principles for the spin-splitting multiferroic antiferromagnets and compensated ferrimagnets, elucidating the band symmetry features in Brillouin zone. We demonstrate that the spin polarization in spin-splitting magnets, despite of zero net magnetic moment, can be switched by ferroelectric polarization, providing an efficient means of controlling the antiferromagnetic order. Our work may inspire future development of novel multiferroic functional magnets with zero magnetic moments and pave the way for their applications in magnetoelectric spintronic devices.

cond-mat.mtrl-sci

Spin Hall effect in 3d ferromagnetic metals for field-free switching of perpendicular magnetization: A first-principles investigation

Ferromagnetic metals, with the potential to generate spin current with unconventional spin polarization via the spin Hall effect, offer promising opportunities for field-free switching of perpendicular magnetization and for the spin-orbit torque devices. In this study, we investigate two distinct spin Hall mechanisms in 3d ferromagnetic metals including spin-orbit coupling driven spin Hall effect in Fe, Co, Ni and their alloys, and non-relativistic spin Hall effect arising from anisotropic spin-polarized transport by taking L10-MnAl as an example. By employing first-principles calculations, we examine the temperature and alloy composition dependence of spin Hall conductivity in Fe, Co, Ni and their alloys. Our results reveal that the spin Hall conductivities with out-of-plane spin polarization in 3d ferromagnetic metals are at the order of 1000 \frac{\hbar}{2e} \left( \Omega \, \text{cm} \right)^{-1} at 300 K, but with a relatively low spin Hall angles around 0.01~0.02 due to the large longitudinal conductivity. For L10-MnAl(101), the non-relativistic spin Hall conductivity can reach up to 10000\frac{\hbar}{2e} \left( \Omega \, \text{cm} \right)^{-1}, with a giant spin Hall angle around 0.25 at room temperature. By analyzing the magnetization switching process, we demonstrate deterministic switching of perpendicular magnetization without an external magnetic field by using 3d ferromagnetic metals as spin current sources. Our work may provide an unambiguous understanding on spin Hall effect in ferromagnetic metals and pave the way for their potential applications in related spintronic devices.

cond-mat.mtrl-sci

PromptGCN: Bridging Subgraph Gaps in Lightweight GCNs

Graph Convolutional Networks (GCNs) are widely used in graph-based applications, such as social networks and recommendation systems. Nevertheless, large-scale graphs or deep aggregation layers in full-batch GCNs consume significant GPU memory, causing out of memory (OOM) errors on mainstream GPUs (e.g., 29GB memory consumption on the Ogbnproducts graph with 5 layers). The subgraph sampling methods reduce memory consumption to achieve lightweight GCNs by partitioning the graph into multiple subgraphs and sequentially training GCNs on each subgraph. However, these methods yield gaps among subgraphs, i.e., GCNs can only be trained based on subgraphs instead of global graph information, which reduces the accuracy of GCNs. In this paper, we propose PromptGCN, a novel prompt-based lightweight GCN model to bridge the gaps among subgraphs. First, the learnable prompt embeddings are designed to obtain global information. Then, the prompts are attached into each subgraph to transfer the global information among subgraphs. Extensive experimental results on seven largescale graphs demonstrate that PromptGCN exhibits superior performance compared to baselines. Notably, PromptGCN improves the accuracy of subgraph sampling methods by up to 5.48% on the Flickr dataset. Overall, PromptGCN can be easily combined with any subgraph sampling method to obtain a lightweight GCN model with higher accuracy.

cs.LG

Crystal facet orientation and temperature dependence of charge and spin Hall effects in noncollinear antiferromagnet: A first-principles investigation

Noncollinear antiferromagnets (nc-AFMs) have attracted increasing research attention in spintronics due to their unique spin structures and fascinating charge and spin transport properties. By using first-principles calculations, we comprehensively investigate the charge and spin Hall effects in representative noncollinear antiferromagnet Mn3Pt. Our study reveals that the Hall effects in nc-AFMs are critically dependent on the crystal facet orientation and temperature. For (001) orientated Mn3Pt, each charge and spin Hall conductivity element is comprised of both time reversal odd (T-odd) and even (T-even) contribution, associated with longitudinal conductivity, which leads to sizable and highly anisotropic Hall conductivity. The temperature dependence of charge and spin Hall conductivity has been elucidated by considering both phonon and spin disorder scattering. The scaling relations between Hall conductivity and longitudinal conductivity have also been investigated. The existence of prominent spin Hall effect in nc-AFMs may generate spin current with Sz spin polarization, which is advantageous for field free switching of perpendicular magnetization. Our work may provide unambiguous understanding on the charge and spin transport in noncollinear antiferromagnets and pave their way for applications in antiferromagnetic spintronics.

cond-mat.mtrl-sci

Tunable high-temperature tunneling magnetoresistance in all-van der Waals antiferromagnet/semiconductor/ferromagnet junctions

Magnetic tunnel junctions (MTJs) have been widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) nature of two-dimensional (2D) magnets with atomic-scale flat surfaces and negligible surface roughness greatly facilitates the development of MTJs, yet is only restricted to ferromagnets. Here, we report A-type antiferromagnetism in 2D vdW single-crystal (Fe0.8Co0.2)3GaTe2 with TN~203 K in bulk and ~185 K in 9-nm nanosheets. The metallic nature and out-of-plane magnetic anisotropy make it a suitable candidate for MTJ electrodes. By constructing heterostructures based on (Fe0.8Co0.2)3GaTe2/WSe2/Fe3GaTe2, we obtain a large tunneling magnetoresistance (TMR) ratio of 180% at low temperature and the TMR retains at near-room temperature 280 K. Moreover, the TMR is tunable by the electric field down to 1 mV, implying the potential in energy-efficient spintronic devices. Our work provides new opportunities for 2D antiferromagnetic spintronics and quantum devices.

cond-mat.mtrl-sci

Anatomy of spin Hall effect in ferromagnetic metals

The spin Hall effect in nonmagnetic materials has been intensively studied and became one of the most crucial spin-charge conversion mechanism in spintronics. However, the spin Hall effect in ferromagnetic metals has been less investigated and remains unclear. In this work, we investigate the spin Hall effect in representative ferromagnetic alloy by using first-principles calculations. We first clarify the spin Hall effect into three different types including conventional (CSHE), spin anomalous (SAHE) and magnetic spin Hall effect (MSHE) and then calculate the corresponding spin Hall conductivity and spin Hall angle for (Fe, Co, Ni)Pt, NiFe and CoFe alloy. We find the above three spin Hall mechanisms do coexist in ferromagnetic metals. Particularly, for Pt-based ferromagnetic alloy, a sizable conventional and magnetic spin Hall angles comparable to that of Pt have been predicted. The remarkable unconventional spin Hall effect in ferromagnetic metal may enrich the spin-charge conversion phenomena. For instance, the spin current generated by remarkable MSHE with out-of-plane spin-polarization should be helpful for field-free switching of perpendicular magnetization through spin-orbit torque effect. This work may stimulate future studies on the spin Hall effect in ferromagnetic metals and pave their promising applications for spin-charge conversion devices in spintronics.

cond-mat.mtrl-sci

Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces

Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW material has largely impedes its development in practical spintronics devices. Inspired by the recently discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices.

cond-mat.mtrl-sci

Frequency Fitness Assignment: Optimization without Bias for Good Solutions can be Efficient

A fitness assignment process transforms the features (such as the objective value) of a candidate solution to a scalar fitness, which then is the basis for selection. Under Frequency Fitness Assignment (FFA), the fitness corresponding to an objective value is its encounter frequency in selection steps and is subject to minimization. FFA creates algorithms that are not biased towards better solutions and are invariant under all injective transformations of the objective function value. We investigate the impact of FFA on the performance of two theory-inspired, state-of-the-art EAs, the Greedy (2+1) GA and the Self-Adjusting (1+(lambda,lambda)) GA. FFA improves their performance significantly on some problems that are hard for them. In our experiments, one FFA-based algorithm exhibited mean runtimes that appear to be polynomial on the theory-based benchmark problems in our study, including traps, jumps, and plateaus. We propose two hybrid approaches that use both direct and FFA-based optimization and find that they perform well. All FFA-based algorithms also perform better on satisfiability problems than any of the pure algorithm variants.

cs.NE

Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions

Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics. Here, we demonstrate that non-collinear AFM metals, such as Mn3Sn, exhibit a momentum dependent spin polarization which can be exploited in AFM tunnel junctions to detect the Néel vector. Using first-principles calculations based on density functional theory, we predict a tunneling magnetoresistance (TMR) effect as high as 300% in AFM tunnel junctions with Mn3Sn electrodes, where the junction resistance depends on the relative orientation of their Néel vectors and exhibits four non-volatile resistance states. We argue that the spin-split band structure and the related TMR effect can also be realized in other non-collinear AFM metals like Mn3Ge, Mn3Ga, Mn3Pt, and Mn3GaN. Our work provides a robust method for detecting the Néel vector in non-collinear antiferromagnets via the TMR effect, which may be useful for their application in AFM spintronic devices.

cond-mat.mtrl-sci

Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures

Spin-dependent transport in a full van der Waals (vdW) giant magnetoresistance (GMR) junctions with the structure of Fe3GeTe2/XTe2/Fe3GeTe2 (X = Pt, Pd) has been investigated by using first-principles calculations. The ballistic conductance, magnetoresistance (MR) and resistance-area product (RA) have been calculated in a current-perpendicular-to-plane (CPP) geometry. A giant magnetoresistance of around 2000% and RA less than 0.3 Ω μm2 have been found in the proposed vdW CPP GMR. In addition, the spin-orbit coupling effect on transport and anisotropy magnetoresistance (AMR) has also been investigated. The calculated AMR is found to be around 20% in Fe3GeTe2/trilayer-PdTe2/Fe3GeTe2 CPP GMR. Both GMR and AMR in the proposed vdW CPP GMR mainly originate from the bulk electronic structure properties of Fe3GeTe2. This work demonstrates a vdW CPP GMR with superior advantages including perpendicular magnetic anisotropy, large GMR, low RA as well as sizable AMR may stimulate future experimental explorations and should be appealing for their applications in spintronic devices including magnetic sensor and memory.

cond-mat.mtrl-sci

Ferroelectric control of Néel vector in L10 type of antiferromagnetic films

How to efficiently manipulate the Néel vector of antiferromagnets (AFM) by electric methods is one of the major focuses in current antiferromagnetic spintronics. In this work, we investigated the ferroelectric control of magnetism in AFM L10-MnPt/BaTiO3 bilayers structures by using first-principles calculation. We studied the effect of ferroelectric polarization reversal on magnetic crystalline anisotropy (MCA) of L10-MnPt films with different interface structures. Our results predict a large perpendicular MCA in L10-MnPt films with Pt-O interface, while an in-plane MCA with Mn-O interface when they are interfaced with ferroelectric BaTiO3. In addition, the magnitude of MCA for both interfaces can be modulated efficiently by the polarization reversal of BaTiO3. The ferroelectric control of MCA has been analyzed based on second order perturbation theory, and it can be mainly attributed to the ferroelectric polarization driven redistribution of Pt-5d orbital occupation around Fermi energy. Especially, for Mn-O interface, the Néel vector can be switched between in-plane [100] and [110] directions, or even from in-plane to out-of-plane at certain film thickness by reversing ferroelectric polarization. Our results may provide a non-volatile concept for ferroelectric control of Néel vector in L10-antiferromagnets, which could stimulate experimental investigations on magnetoelectric effect of antiferromagnets and promote its applications in low-power consumption spintronic memory devices.

cond-mat.mtrl-sci

Van der Waals Multiferroic Tunnel Junctions

Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for non-volatile memory devices. So far, however, all the existing MFTJs have been based on perovskite-oxide heterostructures limited by a relatively high resistance-area (RA) product unfavorable for practical applications. Here, using first-principles calculations, we explore spin-dependent transport properties of van der Waals (vdW) MFTJs which consist of two-dimensional (2D) ferromagnetic FenGeTe2 (n = 3, 4, 5) electrodes and 2D ferroelectric In2Se3 barrier layers. We demonstrate that such FemGeTe2/In2Se3/FenGeTe2 (m, n = 3, 4, 5) MFTJs exhibit multiple non-volatile resistance states associated with different polarization orientation of the ferroelectric In2Se3 layer and magnetization alignment of the two ferromagnetic FenGeTe2 layers. We find a remarkably low RA product which makes the proposed vdW MFTJs superior to the conventional MFTJs in terms of their promise for non-volatile memory applications.

cond-mat.mes-hall

Frequency Fitness Assignment: Making Optimization Algorithms Invariant under Bijective Transformations of the Objective Function Value

Under Frequency Fitness Assignment (FFA), the fitness corresponding to an objective value is its encounter frequency in fitness assignment steps and is subject to minimization. FFA renders optimization processes invariant under bijective transformations of the objective function value. On TwoMax, Jump, and Trap functions of dimension s, the classical (1+1)-EA with standard mutation at rate 1/s can have expected runtimes exponential in s. In our experiments, a (1+1)-FEA, the same algorithm but using FFA, exhibits mean runtimes that seem to scale as $s^2\ln{s}$. Since Jump and Trap are bijective transformations of OneMax, it behaves identical on all three. On OneMax, LeadingOnes, and Plateau problems, it seems to be slower than the (1+1)-EA by a factor linear in s. The (1+1)-FEA performs much better than the (1+1)-EA on W-Model and MaxSat instances. We further verify the bijection invariance by applying the Md5 checksum computation as transformation to some of the above problems and yield the same behaviors. Finally, we show that FFA can improve the performance of a memetic algorithm for job shop scheduling.

cs.NE

Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes

Van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional magnetic vdW materials, providing new paradigms for spintronic applications. Here, using density functional theory (DFT) calculations, we investigate the spin-dependent electronic transport across vdW magnetic tunnel junctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a graphene or hexagonal boron nitride (h-BN) spacer layer. For both types of junctions, we find that the junction resistance changes by thousands of percent when the magnetization of the electrodes is switched from parallel to antiparallel. Such a giant tunneling magnetoresistance (TMR) effect is driven by dissimilar electronic structure of the two spin-conducting channels in Fe3GeTe2, resulting in a mismatch between the incoming and outgoing Bloch states in the electrodes and thus suppressed transmission for an antiparallel-aligned MTJ. The vdW bounding between electrodes and a spacer layer makes this result virtually independent of the type of the spacer layer, making the predicted giant TMR effect robust with respect to strain, lattice mismatch, interface distance and other parameters which may vary in the experiment. We hope that our results will further stimulate experimental studies of vdW MTJs and pave the way for their applications in spintronics.

cond-mat.mtrl-sci