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Xinqing Wang

Publications and source records attributed to Xinqing Wang.

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All-Optical Wide-Field Magnetometry with Van Der Waals Quantum Sensor

Negatively charged boron vacancy ($V_B^-$) centers in hexagonal boron nitride ($h$-BN) have attracted wide-range interests owing to their van der Waals lattice and their potentials for $in$-$situ$ quantum sensing. Here we propose and experimentally demonstrate an all-optical strategy for wide-field magnetometry based on $V_B^-$ centers. This strategy exploits the magnetically sensitive ground-state level anti-crossing (GSLAC) of $V_B^-$ centers, which induces a strong electron spin transition between $m_S = 0$ and $m_S = -1$ states, enabling microwave-free magnetic field measurement. By monitoring the shift of GSLAC feature, the external magnetic field can be precisely determined. Using this technique, we demonstrate all-optical wide-field imaging of near-field DC magnetic field distribution from current-carrying circuits over an area of around 42 $\times$ 21 $μ$m$^2$. An estimated photon shot-noise-limited sensitivity of 67.1 $μ$T/$\sqrt{\text{Hz}}$ is achieved for a single pixel, which is an approximately threefold improvement over the ODMR method, along with a spatial resolution of about 1 $μ$m per pixel. Our approach expands the applicability of $V_B^-$ centers in quantum sensing, paving the way for robust and convenient magnetometry under extreme conditions.

quant-ph

Granularity Noise Limit in Atomic-Ensemble-Based Metrology

Conventional noise analysis in atomic-ensemble sensing assumes a continuous-medium approximation, thereby treating the atomic system as a deterministic dielectric. Here, we demonstrate that this assumption breaks down due to the discrete, particulate nature of the ensemble, giving rise to an intrinsic "atomic granularity noise" (AGN) that fundamentally competes with the optical measurement noise (OMN, typically photon shot noise). By introducing a discrete-atom statistical framework, we derive a unified noise-scaling law governed by a single dimensionless resource ratio, $\mathcal{R} = \bar{N}_{\mathrm{ph}}/\bar{N}_{\mathrm{at}}$ at (the photon-to-atom flux ratio). This law predicts a continuous crossover from an OMN-limited regime to an AGN-limited regime. Crucially, our results reveal a counter-intuitive constraint for sensor optimization: increasing optical probe power -- standard practice to mitigate OMN -- can paradoxically degrade sensitivity by driving the system into the AGN-dominated regime. Furthermore, we identify a critical resource threshold, $\mathcal{R}_{\mathrm{crit}}$, beyond which quantum-enhanced metrology using non-classical light fails to improve sensitivity, as it becomes limited by the AGN.

quant-ph

Noise-Resilient Quantum Metrology with Quantum Computing

Quantum computing has made remarkable strides in recent years, as demonstrated by quantum supremacy experiments and the realization of high-fidelity, fault-tolerant gates. However, a major obstacle persists: practical real-world applications remain scarce, largely due to the inefficiency of loading classical data into quantum processors. Here, we propose an alternative strategy that shifts the focus from classical data encoding to directly processing quantum data. We target quantum metrology, a practical quantum technology whose precision is often constrained by realistic noise. We develop an experimentally feasible scheme in which a quantum computer optimizes information acquired from quantum metrology, thereby enhancing performance in noisy quantum metrology tasks and overcoming the classical-data-loading bottleneck. We demonstrate this approach through experimental implementation with nitrogen-vacancy centers in diamond and numerical simulations using models of distributed superconducting quantum processors. Our results show that this method improves the accuracy of sensing estimates and significantly boosts sensitivity, as quantified by the quantum Fisher information, thus offering a new pathway to harness near-term quantum computers for realistic quantum metrology.

quant-ph

Host dependence of PL5 ensemble in 4H-SiC

Color center PL5 in 4H silicon carbide (4H-SiC) has drawn significant attention due to its room-temperature quantum coherence properties and promising potential of quantum sensing applications. The preparation of PL5 ensemble is a critical prerequisite for practical applications. In this work, we investigated the formation of PL5 ensembles in types of 4H-SiC wafers, focusing on their suitability as hosts for PL5 ensemble. Results demonstrate that PL5 signals are exclusively observed in high-purity semi-insulating (HPSI) substrates, whereas divacancies PL1-PL4 can be detected in both HPSI and epitaxial samples. The type of in-plane stress in HPSI and epitaxial hosts is compressive in the same order of magnitude. Defects like stacking faults and dislocations are not observed simultaneously in the PL5 ensemble. Notably, the PL5 ensemble exhibits a relatively uniform distribution in the HPSI host, highlighting its readiness for integration into quantum sensing platforms. Furthermore, signal of PL5 can always be detected in the HPSI samples with different doses of electron irradiation, which suggests that HPSI wafers are more suitable hosts for the production of PL5 ensemble. This work provides critical insights into the material-specific requirements for PL5 ensemble formation and advances the development of 4H-SiC-based quantum technologies.

cond-mat.mtrl-sci