arXiv subjects

Xinxin Cai

Publications and source records attributed to Xinxin Cai.

9 recordsLinked to original sources

arXiv2024

Dynamically corrected gates in silicon singlet-triplet spin qubits

Fault-tolerant quantum computation requires low physical-qubit gate errors. Many approaches exist to reduce gate errors, including both hardware- and control-optimization strategies. Dynamically corrected gates are designed to cancel specific errors and offer the potential for high-fidelity gates, but they have yet to be implemented in singlet-triplet spin qubits in semiconductor quantum dots, due in part to the stringent control constraints in these systems. In this work, we experimentally implement dynamically corrected gates designed to mitigate hyperfine noise in a singlet-triplet qubit realized in a Si/SiGe double quantum dot. The corrected gates reduce infidelities by about a factor of three, resulting in gate fidelities above 0.99 for both identity and Hadamard gates. The gate performances depend sensitively on pulse distortions, and their specific performance reveals an unexpected distortion in our experimental setup.

quant-ph↗

arXiv2024

The formation of a nuclear-spin dark state in silicon

Silicon-based qubits are often made by trapping individual electrons in quantum dots defined by electric gates. Quantum information can then be stored using the spin states of the electrons. However, the nuclei of the surrounding atoms also have spin degrees of freedom that couple to the electron spin qubits and cause decoherence. The emergence of a nuclear-spin dark state has been predicted to reduce this coupling during dynamic nuclear polarization, when the electrons in the quantum dot drive the nuclei in the semiconductor into a decoupled state. Here, we report the formation of a nuclear-spin dark state in a gate-defined silicon double quantum dot. We show that, as expected, the transverse electron-nuclear coupling rapidly diminishes in the dark state, and that this state depends on the synchronized precession of the nuclear spins. Moreover, the dark state significantly reduces the relaxation rate between the singlet and triplet electronic spin states. This nuclear-spin dark state has potential applications as a quantum memory or in quantum sensing, and might enable increased polarization of nuclear spin ensembles.

cond-mat.mes-hall↗

arXiv2021

Coherent spin-valley oscillations in silicon

Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results from the specific character of the Si band structure, is a unique feature of electrons in Si spin qubits. However, the small difference in energy between different valley levels often poses a challenge for quantum computing in Si. Here, we show that the spin-valley coupling in Si, which enables transitions between states with different spin and valley quantum numbers, enables coherent control of electron spins in Si. We demonstrate coherent manipulation of effective single- and two-electron spin states in a Si/SiGe double quantum dot without ac magnetic or electric fields. Our results illustrate that the valley degree of freedom, which is often regarded as an inconvenience, can itself enable quantum manipulation of electron spin states.

cond-mat.mes-hall↗

arXiv2020

Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4

The observation of the highly unusual half-quantum vortex (HQV) in a single crystalline superconductor excludes unequivocally the spin-singlet symmetry of the superconducting order parameter. HQVs were observed previously in mesoscopic samples of Sr2RuO4 in cantilever torque magnetometry measurements, thus providing direct evidence for spin-triplet pairing in the material. In addition, it raised important questions on HQV, including its stability and dynamics. These issues have remained largely unexplored, in particular, experimentally. We report in this paper the detection of HQVs in mesoscopic, doubly connected cylinders of single-crystalline Sr2RuO4 of a mesoscopic size and the examination of the effect of the in-plane magnetic field needed for the observation of the HQV by magnetoresistance (MR) oscillations measurements. Several distinct features found in our data, especially a dip and secondary peaks in the MR oscillations seen only in the presence of a sufficiently large in-plane magnetic field as well as a large measurement current, are linked to the formation of the HQV fluxoid state in and crossing of an Abrikosov HQV through the sample. The conclusion is drawn from the analysis of our data using a model of thermally activated vortex crossing overcoming a free-energy barrier which is modulated by the applied magnetic flux enclosed in the cylinder as well as the measurement current. Evidence for the trapping of an HQV fluxoid state in the sample was also found. Our observation of the HQV in mesoscopic Sr2RuO4 provided not only additional evidence for spin-triplet superconductivity in Sr2RuO4 but also insights into the physics of HQV, including its spontaneous spin polarization, stability, and dynamics. Our study also revealed a possible effect of the measurement current on the magnitude of the spontaneous spin polarization associated with the HQV.

cond-mat.supr-con↗

arXiv2020

From Weak Antilocalization to Kondo Scattering in a Magnetic Complex Oxide Interface

Quantum corrections to electrical resistance can serve as sensitive probes of the magnetic landscape of a material. For example, interference between time-reversed electron paths gives rise to weak localization effects, which can provide information about the coupling between spins and orbital motion, while the Kondo effect is sensitive to the presence of spin impurities. Here we use low-temperature magnetotransport measurements to reveal a transition from weak antilocalization (WAL) to Kondo scattering in the quasi-two-dimensional electron gas formed at the interface between SrTiO$_3$ and the Mott insulator NdTiO$_3$. This transition occurs as the thickness of the NdTiO$_3$ layer is increased. Analysis of the Kondo scattering and WAL points to the presence of atomic-scale magnetic impurities coexisting with extended magnetic regions that affect transport via a strong magnetic exchange interaction. This leads to distinct magnetoresistance behaviors that can serve as a sensitive probe of magnetic properties in two dimensions.

cond-mat.mtrl-sci↗

arXiv2019

Disentangling spin-orbit coupling and local magnetism in a quasi-two-dimensional electron system

Quantum interference between time-reversed electron paths in two dimensions leads to the well-known weak localization correction to resistance. If spin-orbit coupling is present, the resistance correction is negative, termed weak anti-localization (WAL). Here we report the observation of WAL coexisting with exchange coupling between itinerant electrons and localized magnetic moments. We use low-temperature magneto-transport measurements to investigate the quasi-two-dimensional, high-electron-density interface formed between SrTiO$_3$ (STO) and the anti-ferromagnetic Mott insulator NdTiO$_3$ (NTO). As the magnetic field angle is gradually tilted away from the sample normal, the data reveals the interplay between strong $k$-cubic Rashba-type spin-orbit coupling and a substantial magnetic exchange interaction from local magnetic regions. The resulting quantum corrections to the conduction are in excellent agreement with existing models and allow sensitive determination of the small magnetic moments (22 $μ_B$ on average), their magnetic anisotropy and mutual coupling strength. This effect is expected to arise in other 2D magnetic materials systems.

cond-mat.mes-hall↗

arXiv2018

Existence of electron and hole pockets and partial gap opening in the correlated semimetal Ca3Ru2O7

The electronic band structure of correlated Ca3Ru2O7 featuring an antiferromagnetic as well as a structural transition has been determined theoretically at high temperatures, which has led to the understanding of the remarkable properties of Ca3Ru2O7 such as the bulk spin valve effects. However, its band structure and Fermi surface (FS) below the structural transition have not been resolved even though a FS consisting of electron pockets was found experimentally. Here we report magneto electrical transport and thermoelectric measurements with the electric current and temper- ature gradient directed along a and b axes of an untwined single crystal of Ca3Ru2O7 respectively. The thermopower obtained along the two crystal axes were found to show opposite signs at low temperatures, demonstrating the presence of both electron and hole pockets on the FS. In addition, how the FS evolves across T* = 30 K at which a distinct transition from coherent to incoherent behavior occurs was also inferred - the Hall and Nernst coefficient results suggest a temperature and momentum dependent partial gap opening in Ca3Ru2O7 below the structural transition, with a pos- sible Lifshitz transition occurring at T*. The experimental demonstration of a correlated semimetal ground state in Ca3Ru2O7 calls for further theoretical studies of this remarkable material.

cond-mat.str-el↗

arXiv2015

Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$

Strong spin-orbital coupling (SOC) was found previously to lead to dramatic effects in quantum materials, such as those found in topological insulators. It was shown theoretically that local noncentrosymmetricity resulting from the rotation of RuO$_6$ octahedral in Sr$_3$Ru$_2$O$_7$ will also give rise to an effective SOC\cite{SocSr327,MicroscopicnematicSr327}. In the presence of a magnetic field applied along a specific in-plane direction, the Fermi surface was predicted to undergo a reconstruction. Here we report results of our in-plane magnetoresistivity and magnetothermopower measurements on single crystals of Sr$_3$Ru$_2$O$_7$ with an electrical or a thermal current applied along specific crystalline directions and a magnetic field rotating in the $ab$ plane (Fig. 1a), showing a minimal value for field directions predicted by the local noncentrosymmetricity theory. Furthermore, the thermopower, and therefore, the electron entropy, were found to be suppressed as the field was applied perpendicular to the thermal current, which suggests that the spin and the momentum in Sr$_3$Ru$_2$O$_7$ are locked over substantial parts of the Fermi surface, likely originating from local noncentrosymmetricity as well.

cond-mat.str-el↗

arXiv2013

Structural and metal-insulator transitions in ionic liquid-gated Ca3Ru2O7 surface

We report the fabrication and measurements of ionic liquid gated Hall bar devices prepared on thin Ca$_3$Ru$_2$O$_7$ flakes exfoliated from bulk single crystals that were grown by a floating zone method. Two types of devices with their electrical transport properties dominated by $c$-axis transport in Type A or that of the in-plane in Type B devices, were prepared. Bulk physical phenomena, including a magnetic transition near 56 K, a structural and metal-insulator transition at a slightly lower temperature, as well as the emergence of a highly unusual metallic state as the temperature is further lowered, were found in both types of devices. However, the Shubnikov-de Haas oscillations were found in Type A but not Type B devices, most likely due to enhanced disorder on the flake surface. Finally, the ionic liquid gating of a Type B device revealed a shift in critical temperature of the structural and metal-insulator transitions, suggesting that such transitions can be tuned by the electric field effect.

cond-mat.str-el↗