arXiv subjects

Xiong Huang

Publications and source records attributed to Xiong Huang.

15 recordsLinked to original sources

arXiv2025

Charge Density Wave and Ferromagnetism in Intercalated CrSBr

In materials with one-dimensional electronic bands, electron-electron interactions can produce intriguing quantum phenomena, including spin-charge separation and charge density waves (CDW). Most of these systems, however, are non-magnetic, motivating a search for anisotropic materials where the coupling of charge and spin may affect emergent quantum states. Here, chemical intercalation of the van der Waals magnetic semiconductor CrSBr yields $Li_{0.17(2)} (tetrahydrofuran)_{0.26(3)} CrSBr$, which possess an electronically driven quasi-1D CDW with an onset temperature above room temperature. Concurrently, electron doping increases the magnetic ordering temperature from 132 K to 200 K and switches its interlayer magnetic coupling from antiferromagnetic to ferromagnetic. The spin-polarized nature of the anisotropic bands that give rise to this CDW enforces an intrinsic coupling of charge and spin. The coexistence and interplay of ferromagnetism and charge modulation in this exfoliatable material provides a promising platform for studying tunable quantum phenomena across a range of temperatures and thicknesses.

cond-mat.mtrl-sci↗

arXiv2024

Electronic Bound States in the Continuum in a 2D Metal

Bound states in the continuum (BICs) are quantum states that remain localized despite existing within a continuum of extended, delocalized states. They defy conventional wave theories and could be instrumental for quantum technologies that rely on the precise control of quantum states. While optical BICs have been realized in photonic systems, achieving electronic bound states in a metallic background remains an ongoing challenge. Here, we observe two defect states that remain localized within the metallic continuum of Pd5AlI2, a two-dimensional van der Waals metal. The emergence of these states is a manifestation of the hopping interference in the Pd5AlI2 lattice. This interference results in a (quasi) flat band and spatially localized eigenstates that are orthogonal to the metallic continuum thus avoiding hybridization with extended states.

cond-mat.mtrl-sci↗

arXiv2024

Low-Energy Electronic Structure in the Unconventional Charge-Ordered State of ScV$_6$Sn$_6$

Kagome vanadates {\it A}V$_3$Sb$_5$ display unusual low-temperature electronic properties including charge density waves (CDW), whose microscopic origin remains unsettled. Recently, CDW order has been discovered in a new material ScV$_6$Sn$_6$, providing an opportunity to explore whether the onset of CDW leads to unusual electronic properties. Here, we study this question using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). The ARPES measurements show minimal changes to the electronic structure after the onset of CDW. However, STM quasiparticle interference (QPI) measurements show strong dispersing features related to the CDW ordering vectors. A plausible explanation is the presence of a strong momentum-dependent scattering potential peaked at the CDW wavevector, associated with the existence of competing CDW instabilities. Our STM results further indicate that the bands most affected by the CDW are near vHS, analogous to the case of {\it A}V$_3$Sb$_5$ despite very different CDW wavevectors.

cond-mat.str-el↗

arXiv2023

Valley-polarized Exitonic Mott Insulator in WS2/WSe2 Moiré Superlattice

Strongly enhanced electron-electron interaction in semiconducting moiré superlattices formed by transition metal dichalcogenides (TMDCs) heterobilayers has led to a plethora of intriguing fermionic correlated states. Meanwhile, interlayer excitons in a type-II aligned TMDC heterobilayer moiré superlattice, with electrons and holes separated in different layers, inherit this enhanced interaction and strongly interact with each other, promising for realizing tunable correlated bosonic quasiparticles with valley degree of freedom. We employ photoluminescence spectroscopy to investigate the strong repulsion between interlayer excitons and correlated electrons in a WS2/WSe2 moiré superlattice and combine with theoretical calculations to reveal the spatial extent of interlayer excitons and the band hierarchy of correlated states. We further find that an excitonic Mott insulator state emerges when one interlayer exciton occupies one moiré cell, evidenced by emerging photoluminescence peaks under increased optical excitation power. Double occupancy of excitons in one unit cell requires overcoming the energy cost of exciton-exciton repulsion of about 30-40 meV, depending on the stacking configuration of the WS2/WSe2 heterobilayer. Further, the valley polarization of the excitonic Mott insulator state is enhanced by nearly one order of magnitude. Our study demonstrates the WS2/WSe2 moiré superlattice as a promising platform for engineering and exploring new correlated states of fermion, bosons, and a mixture of both.

cond-mat.mes-hall↗

arXiv2023

Measurements of Correlated Insulator Gaps in a Transition Metal Dichalcogenide Moiré Superlattice

Moiré superlattices of transitional metal dichalcogenides exhibit strong electron-electron interaction that has led to experimental observations of Mott insulators and generalized Wigner crystals. In this letter, we report direct measurements of the thermodynamic gaps of these correlated insulating states in a dual-gate WS2/WSe2 moiré bilayer. We employ the microwave impedance microscopy to probe the electronic features in both the graphene top gate and the moiré bilayer, from which we extract the doping dependence of the chemical potential of the moiré bilayer and the energy gaps for various correlated insulating states utilizing the Landau quantization of graphene. These gaps are relatively insensitive to the application of an external electric field to the WS2/WSe2 moiré bilayer.

cond-mat.str-el↗

arXiv2023

Quadrupolar Excitons and Hybridized Interlayer Mott Insulator in a Trilayer Moiré Superlattice

Transition metal dichalcogenide (TMDC) moiré superlattices, owing to the moiré flatbands and strong correlation, can host periodic electron crystals and fascinating correlated physics. The TMDC heterojunctions in the type-II alignment also enable long-lived interlayer excitons that are promising for correlated bosonic states, while the interaction is dictated by the asymmetry of the heterojunction. Here we demonstrate a new excitonic state, quadrupolar exciton, in a symmetric WSe2-WS2-WSe2 trilayer moiré superlattice. The quadrupolar excitons exhibit a quadratic dependence on the electric field, distinctively different from the linear Stark shift of the dipolar excitons in heterobilayers. This quadrupolar exciton stems from the hybridization of WSe2 valence moiré flatbands. The same mechanism also gives rise to an interlayer Mott insulator state, in which the two WSe2 layers share one hole laterally confined in one moiré unit cell. In contrast, the hole occupation probability in each layer can be continuously tuned via an out-of-plane electric field, reaching 100% in the top or bottom WSe2 under a large electric field, accompanying the transition from quadrupolar excitons to dipolar excitons. Our work demonstrates a trilayer moiré system as a new exciting playground for realizing novel correlated states and engineering quantum phase transitions.

cond-mat.mes-hall↗

arXiv2021

Evidence for equilibrium excitons and exciton condensation in monolayer WTe2

A single monolayer of the layered semimetal WTe2 behaves as a two-dimensional topological insulator, with helical conducting edge modes surrounding a bulk state that becomes insulating at low temperatures. Here we present evidence that the bulk state has a very unusual nature, containing electrons and holes bound by Coulomb attraction (excitons) that spontaneously form in thermal equilibrium. On cooling from room temperature to 100 K the conductivity develops a V-shaped dependence on electrostatic doping, while the chemical potential develops a ~43 meV step at the neutral point. These features are much sharper than is possible in an independent-electron picture, but they can be largely accounted for by positing that some of the electrons and holes are paired in equilibrium. Our calculations from first principles show that the exciton binding energy is larger than 100 meV and the radius as small as 4 nm, explaining their formation at high temperature and doping levels. Below 100 K more strongly insulating behavior is seen, suggesting that a charge-ordered state forms. The observed absence of charge density waves in this state appears surprising within an excitonic insulator picture, but we show that it can be explained by the symmetries of the exciton wave function. Monolayer WTe2 therefore presents an exceptional combination of topological properties and strong correlations over a wide temperature range.

cond-mat.str-el↗

arXiv2021

Moire Superlattice Modulations in Single-Unit-Cell FeTe Films Grown on NbSe2 Single Crystals

Interface can be a fertile ground for exotic quantum states, including topological superconductivity, Majorana mode, fractal quantum Hall effect, unconventional superconductivity, Mott insulator, etc. Here we grow single-unit-cell (1UC) FeTe film on NbSe2 single crystal by molecular beam epitaxy (MBE) and investigate the film in-situ with home-made cryogenic scanning tunneling microscopy (STM) and non-contact atomic force microscopy (AFM) combined system. We find different stripe-like superlattice modulations on grown FeTe film with different misorientation angles with respect to NbSe2 substrate. We show that these stripe-like superlattice modulations can be understood as moire pattern forming between FeTe film and NbSe2 substrate. Our results indicate that the interface between FeTe and NbSe2 is atomically sharp. By STM-AFM combined measurement, we suggest the moire superlattice modulations have an electronic origin when the misorientation angle is relatively small (<= 3 degree) and have structural relaxation when the misorientation angle is relatively large (>= 10 degree).

cond-mat.str-el↗

arXiv2021

Thermal dynamics of charge density wave pinning in ZrTe3

Impurity pinning has long been discussed to have a profound effect on the dynamics of an incommensurate charge density wave (CDW), which would otherwise slide through the lattice without resistance. Here we visualize the impurity pinning evolution of the CDW in ZrTe3 using the variable temperature scanning tunneling microscopy (STM). At low temperatures, we observe a quasi-1D incommensurate CDW modulation moderately correlated to the impurity positions, indicating a weak impurity pinning. As we raise the sample temperature, the CDW modulation gets progressively weakened and distorted, while the correlation with the impurities becomes stronger. Above the CDW transition temperature, short-range modulations persist with the phase almost all pinned by impurities. The evolution from weak to strong impurity pinning through the CDW transition can be understood as a result of losing phase rigidity.

cond-mat.str-el↗

arXiv2021

Determination of the spin axis in quantum spin Hall insulator monolayer WTe2

Evidence for the quantum spin Hall (QSH) effect has been reported in several experimental systems in the form of approximately quantized edge conductance. However, the most fundamental feature of the QSH effect, spin-momentum locking in the edge channels, has never been demonstrated experimentally. Here, we report clear evidence for spin-momentum locking in the edge channels of monolayer WTe2, thought to be a two-dimensional topological insulator (2D TI). We observe that the edge conductance is controlled by the component of an applied magnetic field perpendicular to a particular axis, which we identify as the spin axis. The axis is the same for all edges, situated in the mirror plane perpendicular to the tungsten chains at 40$\pm$2° to the layer normal, implying that the spin-orbit coupling is inherited from the bulk band structure. We show that this finding is consistent with theory if the band-edge orbitals are taken to have like parity. We conclude that this parity assignment is correct and that both edge states and bulk bands in monolayer WTe2 share the same simple spin structure. Combined with other known features of the edge states this establishes spin-momentum locking, and therefore that monolayer WTe2 is truly a natural 2D TI.

cond-mat.mes-hall↗

arXiv2021

Moiré Imaging in Twisted Bilayer Graphene Aligned on Hexagonal Boron Nitride

Moiré superlattices (MSL) formed in angle-aligned bilayers of van der Waals materials have become a promising platform to realize novel two-dimensional electronic states. Angle-aligned trilayer structures can form two sets of MSLs which could potentially interfere with each other. In this work, we directly image the moiré patterns in both monolayer graphene aligned on hBN and twisted bilayer graphene aligned on hBN, using combined scanning microwave impedance microscopy and conductive atomic force microscopy. Correlation of the two techniques reveals the contrast mechanism for the achieved ultrahigh spatial resolution (<2 nm). We observe two sets of MSLs with different periodicities in the trilayer stack. The smaller MSL breaks the 6-fold rotational symmetry and exhibits abrupt discontinuities at the boundaries of the larger MSL. Using a rigid atomic-stacking model, we demonstrate that the hBN layer considerably modifies the MSL of twisted bilayer graphene. We further analyze its effect on the reciprocal space spectrum of the dual-moiré system.

cond-mat.mes-hall↗

arXiv2020

Correlated Insulating States at Fractional Fillings of the WS2/WSe2 Moiré Lattice

Moiré superlattices of van der Waals materials, such as twisted graphene and transitional metal dichalcogenides, have recently emerged as a fascinating platform to study strongly correlated states in two dimensions, thanks to the strong electron interaction in the moiré minibands. In most systems, the correlated states appear when the moiré lattice is filled by integer number of electrons per moiré unit cell. Recently, correlated states at fractional fillings of 1/3 and 2/3 holes per moiré unit cell has been reported in the WS2/WSe2 heterobilayer, hinting the long range nature of the electron interaction. In this work, employing a scanning microwave impedance microscopy technique that is sensitive to local electrical properties, we observe a series of correlated insulating states at fractional fillings of the moiré minibands on both electron- and hole-doped sides in angle-aligned WS2/WSe2 hetero-bilayers, with certain states persisting at temperatures up to 120 K. Monte Carlo simulations reveal that these insulating states correspond to ordering of electrons in the moiré lattice with a periodicity much larger than the moiré unit cell, indicating a surprisingly strong and long-range interaction beyond the nearest neighbors. Our findings usher in unprecedented opportunities in the study of strongly correlated states in two dimensions.

cond-mat.mes-hall↗

arXiv2020

Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi2Te4

The interplay between band topology and magnetic order plays a key role in quantum states of matter. MnBi2Te4, a van der Waals magnet, has recently emerged as an exciting platform for exploring Chern insulator physics. Its layered antiferromagnetic order was predicted to enable even-odd layer-number dependent topological states, supported by promising edge transport measurements. Furthermore, it becomes a Chern insulator when all spins are aligned by an applied magnetic field. However, the evolution of the bulk electronic structure as the magnetic state is continuously tuned and its dependence on layer number remains unexplored. Here, employing multimodal probes, we establish one-to-one correspondence between bulk electronic structure, magnetic state, topological order, and layer thickness in atomically thin MnBi2Te4 devices. As the magnetic state is tuned through the canted magnetic phase, we observe a band crossing, i.e., the closing and reopening of the bulk bandgap, corresponding to the concurrent topological phase transition. Surprisingly, we find that the even- and odd-layer number devices exhibit a similar topological phase transition coupled to magnetic states, distinct from recent theoretical and experimental reports. Our findings shed new light on the interplay between band topology and magnetic order in this newly discovered topological magnet and validate the band crossing with concurrent measurements of topological invariant in a continuously tuned topological phase transition.

cond-mat.mes-hall↗

arXiv2020

Experimental observations indicating the topological nature of the edge states on HfTe5

The topological edge states of two-dimensional topological insulators with large energy gap furnish ideal conduction channels for dissipationless current transport. Transition metal tellurides XTe5 (X=Zr, Hf) are theoretically predicted to be large-gap two-dimensional topological insulators and the experimental observations of their bulk insulating gap and in-gap edge states have been reported, but the topological nature of these edge states still remains to be further elucidated. Here, we report our low temperature scanning tunneling microscopy/spectroscopy study on single crystals of HfTe5. We demonstrate a full energy gap of ~80 meV near the Fermi level on the surface monolayer of HfTe5 and that such insulating energy gap gets filled with finite energy states when measured at the monolayer step edges. Remarkably, such states are absent at the edges of a narrow monolayer strip of one-unit-cell in width but persist at both step edges of a unit-cell wide monolayer groove. These experimental observations strongly indicate that the edge states of HfTe5 monolayers are not trivially caused by translational symmetry breaking, instead they are topological in nature protected by the 2D nontrivial bulk properties.

cond-mat.mtrl-sci↗

arXiv2019

Coexistence of Magnetic Orders in Two-Dimensional Magnet CrI$_3$

The magnetic properties in two-dimensional van der Waals materials depend sensitively on structure. CrI3, as an example, has been recently demonstrated to exhibit distinct magnetic properties depending on the layer thickness and stacking order. Bulk CrI3 is ferromagnetic (FM) with a Curie temperature of 61 K and a rhombohedral layer stacking, while few-layer CrI3 has a layered antiferromagnetic (AFM) phase with a lower ordering temperature of 45 K and a monoclinic stacking. In this work, we use cryogenic magnetic force microscopy to investigate CrI3 flakes in the intermediate thickness range (25 - 200 nm) and find that the two types of magnetic orders hence the stacking orders can coexist in the same flake, with a layer of ~13 nm at each surface being in the layered AFM phase similar to few-layer CrI3 and the rest in the bulk FM phase. The switching of the bulk moment proceeds through a remnant state with nearly compensated magnetic moment along the c-axis, indicating formation of c-axis domains allowed by a weak interlayer coupling strength in the rhombohedral phase. Our results provide a comprehensive picture on the magnetism in CrI3 and point to the possibility of engineering magnetic heterostructures within the same material.

cond-mat.mes-hall↗