arXiv subjects

Xiufeng Han

Publications and source records attributed to Xiufeng Han.

At least 37 records · Page 2Linked to original sources

arXiv2024

Electrical switching of the perpendicular Neel order in a collinear antiferromagnet

Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the Néel vector of antiferromagnetic (AFM) materials, particularly to collinear antiferromagnets with the perpendicular magnetic anisotropy (PMA), as the negligible stray fields and terahertz spin dynamics can enable memory devices with higher integration density and ultrafast speed. Here we demonstrate that the Néel order information in a prototypical collinear AFM insulator with PMA, Cr2O3, can be reliably readout via the anomalous Hall effect and efficiently switched by the spin-orbit torque (SOT) effect with a low current density of 5.8*106 A/cm2. Moreover, using Cr2O3 as a mediator, we electrically switch the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer, unambiguously confirming the Néel order switching of the Cr2O3 layer. This work provides a significant basis for developing AFM memory devices based on collinear AFM materials with PMA.

physics.app-ph↗

arXiv2023

In-Plane Magnon Valve Effect in Magnetic Insulator/Heavy Metal/ Magnetic Insulator Device

We propose an in-plane magnon valve (MV), a sandwich structure composed of ferromagnetic insulator/heavy metal/ferromagnetic insulator (MI/HM/MI). When the magnetizations of the two MI layers are parallel, the longitudinal conductance in the HM layer is greater than that in the antiparallel state according to the magnetic proximity effect, termed as the in-plane magnon valve effect. We investigate the dependence of MV ratio (MVR), which is the relative change in longitudinal conductance between the parallel and antiparallel MV states, on the difference in electronic structure between magnetized and non-magnetized metal atoms, revealing that MVR can reach 100%. Additionally, the dependence of MVR on the thickness of metal layer is analyzed, revealing an exponential decrease with increasing thickness. Then we investigate the dependence of HM layer conductance on the relative angle between the magnetizations of two MI layers, illustrating the potential of MV as a magneto-sensitive magnonic sensor. We also investigate the effect of Joule heating on the measurement signal based on the spin Seebeck effect. Two designed configurations are proposed according to whether the electron current is parallel or perpendicular to the magnetization of the MI layer. In the parallel configuration, the transverse voltage differs between the parallel and antiparallel MV states. While in the perpendicular configuration, the longitudinal resistance differs. Quantitative numerical results indicate the feasibility of detecting a voltage signal using the first configuration in experiments. Our work contributes valuable insights for the design, development and integration of magnon devices

cond-mat.mes-hall↗

arXiv2023

Crystal facet orientated Altermagnets for detecting ferromagnetic and antiferromagnetic states by giant tunneling magnetoresistance effect

Emerging altermagnetic materials with vanishing net magnetizations and unique band structures have been envisioned as an ideal electrode to design antiferromagnetic tunnel junctions. Their momentum-resolved spin splitting in band structures defines a spin-polarized Fermi surface, which allows altermagnetic materials to polarize current as a ferromagnet, when the current flows along specific directions relevant to their altermagnetism. Here, we design an Altermagnet/Insulator barrier/Ferromagnet junction, renamed as altermagnetic tunnel junction (ATMTJ), using RuO$_2$/TiO$_2$/CrO$_2$ as a prototype. Through first-principles calculations, we investigate the tunneling properties of the ATMTJ along the [001] and [110] directions, which shows that the tunneling magnetoresistance (TMR) is almost zero when the current flows along the [001] direction, while it can reach as high as 6100\% with current flows along the [110] direction. The spin-resolved conduction channels of the altermagnetic RuO$_2$ electrode are found responsible for this momentum-dependent (or transport-direction-dependent) TMR effect. Furthermore, this ATMTJ can also be used to readout the Néel vector of the altermagnetic electrode RuO$_2$. Our work promotes the understanding toward the altermagnetic materials and provides an alternative way to design magnetic tunnel junctions with ultrahigh TMR ratios and robustness of the altermagnetic electrode against external disturbance, which broadens the application avenue for antiferromagnetic spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Broad-Wavevector Spin Pumping of Flat-Band Magnons

We report the experimental observation of large spin pumping signals in YIG/Pt system driven by broad-wavevector spin-wave spin current. 280 nm-wide microwave inductive antennas offer broad-wavevector excitation which, in combination with quasi-flatband of YIG, allows a large number of magnons to participate in spin pumping at a given frequency. Through comparison with ferromagnetic resonance spin pumping, we attribute the enhancement of the spin current to the multichromatic magnons. The high efficiency of spin current generation enables us to uncover nontrivial propagating properties in ultra-low power regions. Additionally, our study achieves the spatially separated detection of magnons, allowing the direct extraction of the decay length. The synergistic combination of the capability of broad-wavevector excitation, enhanced voltage signals, and nonlocal detection provides a new avenue for the electrical exploration of spin waves dynamics.

cond-mat.mes-hall↗

arXiv2023

Observation of Fluctuation Spin Hall Effect in Antiferromagnet

The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase-transition is proved as an effective mechanism to create an additional part of SHE, named as fluctuation spin Hall effect (FSHE). This FSHE enhances the SHA due to the AFM spin fluctuation between conduction electrons and local spins. We detect the FSHE with the inverse and direct spin Hall effect (ISHE and DSHE) set-up and their temperature (T) dependences in the Cr/MgO/Fe magnetic tunnel junctions (MTJs). The SHA is significantly enhanced when temperature is approached to the Néel temperature (T_N) and has a peak value of -0.34 at 200 K near T_N. This value is higher than the room-temperature value by 240% and comparable to that of heavy metals Ta and W. Furthermore, the spin Hall resistivity of Cr well fits the modeled T-dependence when T approaches T_N from low temperatures, implying the AFM spin fluctuation nature of strong SHA enhancement. Thus, this study demonstrates the critical spin fluctuation as a prospective way of increasing SHA and enriches the AFM material candidates for spin-orbitronic devices.

cond-mat.mes-hall↗

arXiv2023

Observation of spin-wave moiré edge and cavity modes in twisted magnetic lattices

We report the experimental observation of the spin-wave moiré edge and cavity modes using Brillouin light scattering spectro-microscopy in a nanostructured magnetic moiré lattice consisting of two twisted triangle antidot lattices based on an yttrium iron garnet thin film. Spin-wave moiré edge modes are detected at an optimal twist angle and with a selective excitation frequency. At a given twist angle, the magnetic field acts as an additional degree of freedom for tuning the chiral behavior of the magnon edge modes. Micromagnetic simulations indicate that the edge modes emerge within the original magnonic band gap and at the intersection between a mini-flatband and a propagation magnon branch. Our theoretical estimate for the Berry curvature of the magnon-magnon coupling suggests a non-trivial topology for the chiral edge modes and confirms the key role played by the dipolar interaction. Our findings shed light on the topological nature of the magnon edge mode for emergent moiré magnonics.

cond-mat.mes-hall↗

arXiv2023

Voltage-Controlled Magnon Transistor via Tunning Interfacial Exchange Coupling

Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact with an electric field and it is thus difficult to manipulate magnon transport by voltages straightforwardly. Here, we demonstrated a gate voltage ($V_{\rm g}$) applied on a nonmagnetic metal/magnetic insulator (NM/MI) interface that bended the energy band of the MI and then modulated the possibility for conduction electrons in the NM to tunnel into the MI can consequently enhance or weaken the spin-magnon conversion efficiency at the interface. A voltage-controlled magnon transistor based on the magnon-mediated electric current drag (MECD) effect in a Pt/Y$_{\rm 3}$Fe$_{\rm 5}$O$_{\rm 12}$ (YIG)/Pt sandwich was then experimentally realized with $V_{\rm g}$ modulating the magnitude of the MECD signal. The obtained efficiency (the change ratio between the MECD voltage at $\pm V_{\rm g}$) reached 10%/(MV/cm) at 300 K. This prototype of magnon transistor offers an effective scheme to control magnon transport by a gate voltage.

cond-mat.mes-hall↗

arXiv2022

Nonlocal detection of interlayer three-magnon coupling

A leading nonlinear effect in magnonics is the interaction that splits a high-frequency magnon into two low-frequency ones with conserved linear momentum. Here, we report experimental observation of nonlocal three-magnon scattering between spatially separated magnetic systems, viz. a CoFeB nanowire and an yttrium iron garnet (YIG) thin film. Above a certain threshold power of an applied microwave field, a CoFeB Kittel magnon splits into a pair of counter-propagating YIG magnons that induce voltage signals in Pt electrodes on each side, in excellent agreement with model calculations based on the interlayer dipolar interaction. The excited YIG magnon pairs reside mainly in the first excited (n=1) perpdendicular standing spin-wave mode. With increasing power, the n=1 magnons successively scatter into nodeless (n=0) magnons through a four-magnon process. Our results help to assess non-local scattering processes in magnonic circuits that may enable quantum entanglement between distant magnons for quantum information applications.

cond-mat.mes-hall↗

arXiv2022

Field-free spin-orbit torque switching enabled by interlayer Dzyaloshinskii-Moriya interaction

Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory(SOT-MRAM).Several structures have been developed;however,new structures with a simple stack structure and MRAM compatibility are urgently needed.Herein,a typical structure in a perpendicular spin-transfer torque MRAM,the Pt/Co multilayer and its synthetic antiferromagnetic counterpart with perpendicular magnetic anisotropy, was observed to possess an intrinsic interlayer chiral interaction between neighboring magnetic layers,namely the interlayer Dzyaloshinskii-Moriya interaction (DMI) effect. Furthermore, using a current parallel to the eigenvector of the interlayer DMI, we switched the perpendicular magnetization of both structures without a magnetic field, owing to the additional symmetry-breaking introduced by the interlayer DMI. This SOT switching scheme realized in the Pt/Co multilayer and its synthetic antiferromagnet structure may open a new avenue toward practical perpendicular SOT-MRAM and other SOT devices.

physics.app-ph↗

arXiv2022

Plasmonic dichroism and all-optical magnetization switching in nanophotonic structures with GdFeCo

We report on a phenomenon of plasmonic dichroism observed in magnetic materials with the transverse magnetization under the excitation of the surface plasmon polariton waves. The effect originates from the interplay of the two magnetization-dependent contributions to the material absorption, both of which are enhanced under plasmon excitation. Similar to the recently discovered effect of a all-optical helicity-dependent magnetization switching, this effect provides a possibility to perform a deterministic magnetization switching to the desired state. We show by electromagnetic modeling that laser pulses exciting counter-propagating plasmons can be used to write +M or -M state in a deterministic way independent on the initial magnetization state. The presented approach applies to various ferrimagnetic materials exhibiting the phenomenon of all-optical switching of thermal nature and broadens the horizons of their applications in data storage devices.

physics.optics↗

arXiv2021

Transition of laser-induced terahertz spin currents from torque- to conduction-electron-mediated transport

Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1) spin-polarized conduction electrons and/or (2) torque between electron spins. To identify a cross-over from (1) to (2), we study laser-driven spin currents in F|Pt stacks where F consists of model materials with different degrees of electrical conductivity. For the magnetic insulators YIG, GIG and maghemite, identical dynamics is observed. It arises from the THz interfacial spin Seebeck effect (SSE), is fully determined by the relaxation of the electrons in the metal layer and provides an estimate of the spin-mixing conductance of the GIG/Pt interface. Remarkably, in the half-metallic ferrimagnet Fe3O4 (magnetite), our measurements reveal two spin-current components with opposite direction. The slower, positive component exhibits SSE dynamics and is assigned to torque-type magnon excitation of the A- and B-spin sublattices of Fe3O4. The faster, negative component arises from the pyro-spintronic effect and can consistently be assigned to ultrafast demagnetization of e-sublattice minority-spin hopping electrons. This observation supports the magneto-electronic model of Fe3O4. In general, our results provide a new route to the contact-free separation of torque- and conduction-electron-mediated spin currents.

cond-mat.mes-hall↗

arXiv2021

Magnon-mediated interlayer coupling in an all-antiferromagnetic junction

The interlayer coupling mediated by fermions in ferromagnets brings about parallel and anti-parallel magnetization orientations of two magnetic layers, resulting in the giant magnetoresistance, which forms the foundation in spintronics and accelerates the development of information technology. However, the interlayer coupling mediated by another kind of quasi-particle, boson, is still lacking. Here we demonstrate such a static interlayer coupling at room temperature in an antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the two antiferromagnetic Fe2O3 layers are functional materials and the antiferromagnetic Cr2O3 layer serves as a spacer. The Néel vectors in the top and bottom Fe2O3 are strongly orthogonally coupled, which is bridged by a typical bosonic excitation (magnon) in the Cr2O3 spacer. Such an orthogonally coupling exceeds the category of traditional collinear interlayer coupling via fermions in ground state, reflecting the fluctuating nature of the magnons, as supported by our magnon quantum well model. Besides the fundamental significance on the quasi-particle-mediated interaction, the strong coupling in an antiferromagnetic magnon junction makes it a realistic candidate for practical antiferromagnetic spintronics and magnonics with ultrahigh-density integration.

cond-mat.mtrl-sci↗

arXiv2020

Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field

Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n diode. Our main goal is to take advantage of the long electron spin relaxation time expected in these nano-objects. In these experiments, no external magnetic field is required thanks to the use of an ultrathin magnetic CoFeB/MgO electrode, presenting perpendicular magnetic anisotropy (PMA). We observe a clear asymmetry of the photocurrent measured under respective right and left polarized light that follows the hysteresis of the magnetic layer. The amplitude of this asymmetry at zero magnetic field decreases with increasing temperatures and can be controlled with the bias. Polarization-resolved photoluminescence is detected in parallel while the device is operated as a photodetector. This demonstrates the multifunctional capabilities of the device and gives valuable insights into the spin relaxation of the electrons in the quantum dots.

physics.app-ph↗

arXiv2020

Magnetic asymmetry induced anomalous spin-orbit torque in IrMn

We demonstrate an anomalous spin-orbit torque induced by the broken magnetic symmetry in the antiferromagnet IrMn. We study the magnetic structure of three phases of IrMn thin films using neutron diffraction technique. The magnetic mirror symmetry M' is broken laterally in both L10-IrMn and L12-IrMn3 but not γ-IrMn3. We observe an out-of-plane damping-like spin-orbit torque in both L10-IrMn/permalloy and L12-IrMn3/permalloy bilayers but not in γ-IrMn3/permalloy. This is consistent with both the symmetry analysis on the effects of a broken M' on spin-orbit torque and the theoretical predictions of the spin Hall effect and the Rashba-Edelstein effect. In addition, the measured spin-orbit torque efficiencies are 0.61+-0.01, 1.01+-0.03 and 0.80+-0.01 for the L10, L12 and γ phases, respectively. Our work highlights the critical roles of the magnetic asymmetry in spin-orbit torque generation.

cond-mat.mtrl-sci↗

arXiv2020

Current-induced in-plane magnetization switching in biaxial ferrimagnetic insulator

Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is generally switched by applying external magnetic fields. Here we investigate current-induced spin-orbit torque (SOT) switching of the magnetization in Y3Fe5O12 (YIG)/Pt bilayers with in-plane magnetic anisotropy, where the switching is detected by spin Hall magnetoresistance. Reversible switching is found at room temperature for a threshold current density of 10^7 A cm^-2. The YIG sublattices with antiparallel and unequal magnetic moments are aligned parallel or antiparallel to the direction of current pulses, which is consistent to the Neel order switching in antiferromagnetic system. It is proposed that such a switching behavior may be triggered by the antidamping-torque acting on the two antiparallel sublattices of FiMI. Our finding not only broadens the magnetization switching by electrical means and promotes the understanding of magnetization switching, but also paves the way for all-electrically modulated microwave devices and spin caloritronics with low power consumption.

cond-mat.mtrl-sci↗

arXiv2020

Non-Hermitian coherent coupling of nanomagnets by exchange spin waves

Non-Hermitian physics has recently attracted much attention in optics and photonics. Less explored is non-Hermitian magnonics that provides opportunities to take advantage of the inevitable dissipation of magnons or spin waves in magnetic systems. Here we demonstrate non-Hermitian coherent coupling of two distant nanomagnets by fast spin waves with sub-50 nm wavelengths. Magnons in two nanomagnets are unidirectionally phase-locked with phase shifts controlled by magnon spin torque and spin-wave propagation. Our results are attractive for analog neuromorphic computing that requires unidirectional information transmission.

cond-mat.mes-hall↗

arXiv2020

Spin transport and dynamic properties of two-dimensional spin-momentum locked states

Materials with spin-momentum locked surface or interface states provide an interesting playground for studying physics and application of charge-spin current conversion. To characterize their non-equilibrium magnetic and transport properties in the presence of a time-dependent external magnetic field and a spin injection from a contact, we introduce three macroscopic variables: a vectorial helical magnetization, a scaler helical magnetization, and the conventional magnetization. We derive a set of closed dynamic equations for these variables by using the spinor Boltzmann approach with the collision terms consistent with the symmetry of spin-momentum locked states. By solving the dynamic equations, we predict several intriguing magnetic and transport phenomena which are experimentally accessible, including magnetic resonant response to an AC applied magnetic field, charge-spin conversion, and spin current induced by the dynamics of helical magnetization.

cond-mat.mes-hall↗

arXiv2020

Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, layered structures provide a new platform for the discovery of new physics and effects. Recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials offer new opportunities. Here we demonstrate the Dzyaloshinskii-Moriya interaction and Néel-type skyrmions are induced at the WTe2/Fe3GeTe2 interface. Fe3GeTe2 is a ferromagnetic material with strong perpendicular magnetic anisotropy. We demonstrate that the strong spin orbit interaction in 1T'-WTe2 does induce a large interfacial Dzyaloshinskii-Moriya interaction at the interface with Fe3GeTe2 due to the inversion symmetry breaking to stabilize skyrmions. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmions along with aligned and stripe-like domain structure. This interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ/m^2, which can stabilize the Néel-type skyrmions in this heterostructure. This work paves a path towards the skyrmionic devices based on van der Waals heterostructures.

cond-mat.mtrl-sci↗