arXiv subjects

Xiuju Song

Publications and source records attributed to Xiuju Song.

4 recordsLinked to original sources

arXiv2026

Checkerboard Shells: A Position-Only Thin-Shell Discretization with Scale-Compatible Completion

Checkerboard edge-midpoint geometry provides an exact planar Varignon parallelogram for every spatial quadrilateral, allowing a local tangent frame and normal to be recovered directly from nodal positions even when the raw quadrilateral is warped. Building on this property, we develop a position-only thin-shell discretization with no independent director, rotation, or strain variables. The connected edge-midpoint surface is taken as the physical midsurface: the first fundamental form is evaluated on planar B faces, while a W-centered second fundamental form is constructed from variations of neighboring B-face normals, so membrane and bending share the same geometric carrier. A variational-kernel analysis shows that smooth second-order consistency does not eliminate lattice-scale blind modes. After quotienting out the raw checkerboard gauge, the B metric has one physical membrane blind direction and the symmetric W curvature has two curvature blind directions. We introduce a quotient-minimal membrane compatibility coordinate $X_M$ and an objective reference-relative curvature coordinate $X_W^{rel}$, placed consistently in the $O(t)$ membrane and $O(t^3)$ bending sectors. The formulation admits an explicit midpoint quotient, complete flat blind-mode classification, rigid-motion objectivity, reference-state consistency, and an $O(h^2)$ near-isometry approximation result for aligned generalized cylinders. Numerical tests show second-order curvature convergence, targeted removal of the membrane defect, and a sub-percent, refinement-decaying influence of $X_W^{rel}$. Linear and nonlinear shell benchmarks further demonstrate flat bending, curved-shell membrane-bending coupling, thickness sensitivity, large rotation, nonlinear pinching, and localized ovalization within a single position-only framework.

math.NA↗

arXiv2023

Self-morphing of elastic bilayers induced by mismatch strain: deformation simulation and bio-inspired design

The process of self-morphing in curved surfaces found in nature, such as with the growth of flowers and leaves, has generated interest in the study of self-morphing bilayers, which has been used in many soft robots or switchers. However, previous research has primarily focused on materials or bilayer fabrication technologies. The self-morphing mechanism and process have been rarely investigated, despite their importance. This study proposed a new deformation simulation method for self-morphing bilayers based on a checkerboard-based discrete differential geometry approach. This new method achieved higher efficiency than traditional finite element methods while still maintaining accuracy. It was also effective in handling complex finite strain situations. Finally, the simulation model was used to design three self-morphing bilayers inspired by folding flowers, spiral grass, and conical seashells. These designs further prove the effectiveness of the proposed method. The results of this study propose a good method for predicting deformation and designing self-morphing bilayers and provide a useful viewpoint for using geometrical methods to solve mechanical problems.

math.NA↗

arXiv2015

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Chemical vapor deposition synthesis of large domain hexagonal boron nitride (h-BN) with uniform thickness on Cu foils is of great challenge, originating from the extremely high nucleation densities and the reverse hydrogen etching competition reaction. We report herein the successful growth of wafer-scale high-quality h-BN monolayer film with the largest single crystalline domain sizes up to 72 micrometer in edge length using a folded Cu enclosure approach. The highly-confined growth space with this facile and unique approach enables the drastic decrease of nucleation centers together with the effective suppression of hydrogen etching reaction. It is revealed, for the first time, that the orientations of as-grown h-BN monolayers are strongly correlated with the crystalline facets of growth substrates, with the Cu (111) being the best substrate for growing high-quality single crystalline h-BN monolayer, consistent with the density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films and deepens the fundamental understanding of h-BN growth process.

cond-mat.mtrl-sci↗

arXiv2015

Etching-free transfer of wafer-scale MoS2 films

How to transfer MoS2 films from growth substrates onto target substrates is a critical issue for its practical applications. However, it remains a great challenge to avoid the sample degradation and substrate destruction, since current transfer method inevitably employs a wet chemical etching process. Herein, we develop an etching-free transfer method for transferring wafer-scale MoS2 films onto arbitrary substrates by using ultrasonication. Briefly, the collapse of ultrasonication-generated microbubbles at the interface between polymer-coated MoS2 film and substrates induce sufficient force to delaminate the MoS2 films. Using this method the MoS2 films can be transferred from all the substrates (silica, mica, strontium titanate, sapphire) and remains the original sample morphology and quality. This method guarantees a simple transfer process, allows the reuse of growth substrates, without the presence of any hazardous etchants. The etching-free transfer method may promote the broad applications of MoS2 in electronics, optoelectronics and catalysis.

cond-mat.mtrl-sci↗