arXiv subjects

Xiuling Li

Publications and source records attributed to Xiuling Li.

7 recordsLinked to original sources

arXiv2026

Graduate Training in Quantum Information Science and Engineering: Lessons, Challenges, and a Roadmap from the NSF Research Traineeship Programs

Since 2019, eighteen NSF Research Traineeship (NRT) awards in quantum information science and engineering (QISE) and adjacent fields have been funded, constituting the largest NSF-coordinated investment in graduate QISE training in the United States. Synthesizing lessons from our programs, we work through the central tensions that every QISE graduate program must negotiate: between depth in a home discipline and breadth across the field, between structured instruction and open-ended experiential and hands-on learning, and between training individual specialists and cultivating teams that collectively cover all areas of QISE. We describe the structural and pedagogical innovations the NRT programs have developed in response, assess what is working and what remains unresolved, and sketch 12 open problems the community will need to address as QISE graduate education scales beyond the well-resourced research universities where it has up till now been mainly concentrated. Eight concrete recommendations follow: (1) adopt the startup model of team-based training as an organizing philosophy; (2) invest immediately in sensing and communication curriculum development; (3) build student agency into program governance, not just activities; (4) establish structural mechanisms for industrial engagement rather than depending on goodwill; (5) design for sustainability from year one; (6) develop graduate-level textbooks spanning all three QISE pillars: computing, sensing, and communications; (7) establish shared outcome assessment instruments across programs; and (8) develop structured mechanisms for faculty professional development in QISE.

physics.ed-ph↗

arXiv2023

Quantum anomalous Hall state in a fluorinated 1T-MoSe$_2$ monolayer

The quantum anomalous Hall state with a large band gap and a high Chern number is significant for practical applications in spintronics. By performing first-principles calculations, we investigate electronic properties of the fully fluorinated 1T-MoSe$_{2}$ monolayer. Without considering the spin-orbit coupling, the band structure demonstrates single-spin semi-metallic properties and the trigonal warping around $K_{\pm}$ valleys. The introduction of the spin-orbit coupling opens considerable band gaps of $117.2$ meV around the two valleys, leading to a nontrivial quantum anomalous Hall state with a Chern number of $|C|=2$, which provides two chiral dissipationless transport channels from topological edge states and associated quantized anomalous Hall conductivity. In addition, an effective model is constructed to describe the low-energy physics of the monolayer. Our findings in the MoSe$_{2}$F$_{2}$ monolayer sheds light on large-gap quantum anomalous Hall states in two-dimensional materials with the chemical functionalization, and provides opportunities in designing low-power and noise-tolerant spintronic devices.

cond-mat.mes-hall↗

arXiv2023

Turning non-magnetic two-dimensional molybdenum disulfide into room temperature magnets by the synergistic effect of strain engineering and charge injection

The development of two-dimensional (2D) room temperature magnets is of great significance to the practical application of spintronic devices. However, the number of synthesized intrinsic 2D magnets is limited and the performances of them are not satisfactory, e.g. typically with low Curie temperature and poor environmental stability. Magnetic modulation based on developed 2D materials, especially non-magnetic 2D materials, can bring us new breakthroughs. Herein, we report room temperature ferromagnetism in halogenated MoS2 monolayer under the synergistic effect of strain engineering and charge injection, and the combined implementation of these two processes is based on the halogenation of MoS2. The adsorbed halogen atoms X (X = F, Cl, and Br) on the surface leads to lattice superstretching and hole injection, resulting in MoS2 monolayer exhibiting half-metallic properties, with one spin channel being gapless in the band structure. The Curie temperature of halogenated MoS2 monolayer is 513~615 K, which is much higher than the room temperature. In addition, large magnetic anisotropy energy and good environmental stability make halogenated MoS2 display great advantages in practical spintronic nanodevices.

cond-mat.mtrl-sci↗

arXiv2022

Greater than 5 Percent Compressive Strain in Graphene via the Self Rolled up Membrane Platform

Graphene is an atomically thin metallic membrane capable of sustaining reversible strain and offers a tempting prospect of controlling its optoelectronic properties via strain. Graphenes exceptional mechanical flexibility and tensile strength provide a lot of room for strain engineering. Here we use the self-rolled-up membrane platform for strain engineering and integration of graphene with stressed dielectric thin films. Graphene rolls up or down together with the stressed film upon releasing from the substrate and the curvature of the rolled-up film stack enables the strain tuning of the graphene monolayer. Raman spectroscopy was used to characterize the uniaxial strain in rolled up graphene by quantifying the red shift and splitting of the G peak in the doubly degenerate E2g optical mode. Approximately 5 percent compressive strain is realized using a SRuM diameter of roughly 2 microns. By reducing the diameter of the SRuM structure, even higher strain level can be reached. The SRuM approach can also be readily applied to induce strain in other materials beyond the level that can be achieved using conventional approaches.

cond-mat.mes-hall↗

arXiv2018

Lattice-mismatched semiconductor heterostructures

Semiconductor heterostructure is a critical building block for modern semiconductor devices. However, forming semiconductor heterostructures of lattice-mismatch has been a great challenge for several decades. Epitaxial growth is infeasible to form abrupt heterostructures with large lattice-mismatch while mechanical-thermal bonding results in a high density of interface defects and therefore severely limits device applications. Here we show an ultra-thin oxide-interfaced approach for the successful formation of lattice-mismatched semiconductor heterostructures. Following the depiction of a theory on the role of interface oxide in forming the heterostructures, we describe experimental demonstrations of Ge/Si (diamond lattices), Si/GaAs (zinc blende lattice), GaAs/GaN (hexagon lattice), and Si/GaN heterostructures. Extraordinary electrical performances in terms of ideality factor, current on/off ratio, and reverse breakdown voltage are measured from p-n diodes fabricated from the four types of heterostructures, significantly outperforming diodes derived from other methods. Our demonstrations indicate the versatility of the ultra-thin-oxide-interface approach in forming lattice-mismatched heterostructures, open up a much larger possibility for material combinations for heterostructures, and pave the way toward broader applications in electronic and optoelectronic realms.

physics.app-ph↗

arXiv2018

Laterally confined photonic crystal surface emitting laser based on monolayer tungsten disulfide operating at room temperature

We report a photonic crystal surface emitting laser using monolayer tungsten disulfide as the gain medium. The cavity design utilizes a heterostructure in the photonic crystal lattice to provide lateral confinement for a high quality factor with a compact active region. Room temperature continuous wave lasing is realized after integrating monolayer tungsten disulfide flakes onto the silicon nitride photonic crystal on quartz substrate. Highly directional, near surface normal emission has also been experimentally demonstrated.

physics.optics↗

arXiv2017

Single Photon Emission from Plasma Treated 2D Hexagonal Boron Nitride

Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Yet, synthesis of color centers that act as single photon emitters which are suitable for on-chip applications is still beyond reach. Here, we report a number of plasma and thermal annealing methods for the fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprised of Ar plasma etching and subsequent annealing in Ar is highly robust, and yields a seven-fold increase in the concentration of emitters in hBN. The initial plasma etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature and have an emission energy distribution that is red-shifted relative to that of pristine hBN. An analysis of emitters fabricated by a range of plasma and annealing treatments, combined with a theoretical investigation of point defects in hBN indicates that single photon emitters characterized by a high degree of photostability and emission wavelengths greater than ~700 nm are associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters by annealing hBN in an oxidative atmosphere. Our findings advance present understanding of the structure of quantum emitter in hBN and enhance the nanofabrication toolkit that is needed to realize integrated quantum nanophotonics based on 2D materials.

cond-mat.mtrl-sci↗