arXiv subjects

Xiumei Ma

Publications and source records attributed to Xiumei Ma.

8 recordsLinked to original sources

arXiv2025

Direct evidence and atomic-scale mechanisms of reduced dislocation mobility in an inorganic semiconductor under illumination

Photo-plasticity in semiconductors, wherein their mechanical properties such as strength, hardness and ductility are influenced by light exposure, has been reported for several decades. Although such phenomena have drawn significant attention for the manufacturability and usage of deformable semiconductor devices, their underlying mechanisms are not well understood due to the lack of direct evidence. Here we provide experimental observation and atomic insights into the reduced mobility of dislocations in zinc sulfide, as a model material, under light. Using photo-nanoindentation and transmission electron microscopy, we observe that dislocations glide shorter distances under light than those in darkness and there are no apparent deformation twins in both conditions. By atomic-scale simulations, we demonstrate that the decreased dislocation mobility is attributed to the increased Peierls stress for dislocation motion and enhanced stress fields around dislocation cores due to photoexcitation. This study improves the understanding of photo-plastic effects in inorganic semiconductors, offering the opportunities for modulating their mechanical properties using light.

cond-mat.mtrl-sci↗

arXiv2022

Electric-field control of the nucleation and motion of isolated three-fold polar vertices

Recently various topological polar structures have been discovered in oxide thin films. Despite the increasing evidence of their switchability under electrical and/or mechanical fields, the dynamic property of isolated ones, which is usually required for applications such as data storage, is still absent. Here, we show the controlled nucleation and motion of isolated three-fold vertices under an applied electric field. At the PbTiO3/SrRuO3 interface, a two-unit-cell thick SrTiO3 layer provides electrical boundary conditions for the formation of three-fold vertices. Utilizing the SrTiO3 layer and in situ electrical testing system, we find that isolated three-fold vertices can move in a controllable and reversible manner with a velocity up to ~629 nm s-1. Microstructural evolution of the nucleation and propagation of isolated three-fold vertices is further revealed by phase-field simulations. This work demonstrates the ability to electrically manipulate isolated three-fold vertices, shedding light on the dynamic property of isolated topological polar structures.

cond-mat.mtrl-sci↗

arXiv2019

Atomic Imaging of Mechanically Induced Topological Transition of Ferroelectric Vortices

Ferroelectric vortices formed through complex lattice-charge interactions have great potential in applications for future nanoelectronics such as memories. For practical applications, it is crucial to manipulate these topological states under external stimuli. Here, we apply mechanical loads to locally manipulate the vortices in a PbTiO3-SrTiO3 superlattice via atomically resolved in situ scanning transmission electron microscopy. The vortices undergo a transition to the a-domain with in-plane polarization under external compressive stress and spontaneously recover after removal of the stress. We reveal the detailed transition process at the atomic scale and reproduce this numerically using phase-field simulations. These findings provide new pathways to control the exotic topological ferroelectric structures for future nanoelectronics and also valuable insights into understanding of lattice-charge interactions at nanoscale.

cond-mat.mtrl-sci↗

arXiv2018

Atomic Origin of Ti Deficient Dislocation in SrTiO3 Bicrystal and Their Electronic Structures

Dislocations in perovskite oxides have important impacts on their physical and chemical properties, which are determined by their unique atomic environments. In the present study, the structure of dislocations in a 10° low-angle grain boundary of SrTiO3 (STO) is characterized by spherical aberration corrected scanning transmission electron microscopy (Cs-STEM) and spectroscopy. In contrast to previous studies, the deficiency instead of enrichment of titanium (Ti) is observed at the dislocation cores mainly due to the Sr substitution and under occupancy of Ti. The presence of oxygen vacancies and partially reduced Ti are also detected at the Ti deficient dislocations cores. These findings indicate the atomic structure of dislocations can be very different even they have the same Burges vectors. Controllable elemental segregation in the dislocations and grain boundaries via bicrystal engineering should be very useful for design of devices with novel functions.

cond-mat.mtrl-sci↗

arXiv2018

Raman Signatures of Broken Inversion Symmetry and In-plane Anisotropy in Type-II Weyl Semimetal Candidate TaIrTe4

The layered ternary compound TaIrTe4 is an important candidate to host the recently predicted type-II Weyl Fermions. However, a direct and definitive proof of the absence of inversion symmetry in this material, a prerequisite for the existence of Weyl Fermions, has so far remained evasive. Herein, an unambiguous identification of the broken inversion symmetry in TaIrTe4 is established using angle-resolved polarized Raman spectroscopy. Combining with high-resolution transmission electron microscopy, we demonstrate an efficient and nondestructive recipe to determine the exact crystallographic orientation of TaIrTe4 crystals. Such technique could be extended to the fast identification and characterization of other type-II Weyl Fermions candidates. A surprisingly strong in-plane electrical anisotropy in TaIrTe4 thin flakes is also revealed, up to 200% at 10K, which is the strongest known electrical anisotropy for materials with comparable carrier density, notably in such good metals as copper and silver.

cond-mat.mtrl-sci↗

arXiv2018

Facile and fast growth of high mobility nanoribbons of ZrTe$_5$

Recently, ZrTe$_5$ has received a lot of attention as it exhibits various topological phases, such as weak and strong topological insulators, a Dirac semimetal, and a quantum spin Hall insulator in the monolayer limit. While most of studies have been focused on the three-dimensional bulk material, it is highly desired to obtain nanostructured materials due to their advantages in device applications. We report the synthesis and characterizations of ZrTe$_5$ nanoribbons. Via a silicon-assisted chemical vapor transport method, long nanoribbons with thickness as thin as 20 nm can be grown. The growth rate is over an order of magnitude faster than the previous method for growth of bulk crystals. Moreover, transport studies show that nanoribbons are of low unintentional doping and high carrier mobility, over 30,000 cm$^2$/Vs, which enable reliable determination of the Berry phase of $π$ in the $ac$ plane from quantum oscillations. Our method holds great potential in growth of high quality ultra-thin nanostructures of ZrTe$_5$.

cond-mat.mtrl-sci↗

arXiv2017

Electrical transport in nano-thick ZrTe$_5$ sheets: from three to two dimensions

ZrTe$_5$ is a newly discovered topological material. Shortly after a single layer ZrTe$_5$ had been predicted to be a two-dimensional topological insulator, a handful of experiments have been carried out on bulk ZrTe$_5$ crystals, which however suggest that its bulk form may be a three-dimensional topological Dirac semimetal. We report the first transport study on ultra thin ZrTe$_5$ flakes down to 10 nm. A significant modulation of the characteristic resistivity maximum in the temperature dependence by thickness has been observed. Remarkably, the metallic behavior, occurring only below about 150 K in bulk, persists to over 320 K for flakes less than 20 nm thick. Furthermore, the resistivity maximum can be greatly tuned by ionic gating. Combined with the Hall resistance, we identify contributions from a semiconducting and a semimetallic bands. The enhancement of the metallic state in thin flakes are consequence of shifting of the energy bands. Our results suggest that the band structure sensitively depends on the film thickness, which may explain the divergent experimental observations on bulk materials.

cond-mat.mtrl-sci↗

arXiv2016

Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film

Exchange bias is one of the most extensively studied phenomena in magnetism, since it exerts a unidirectional anisotropy to a ferromagnet (FM) when coupled to an antiferromagnet (AFM) and the control of the exchange bias is therefore very important for technological applications, such as magnetic random access memory and giant magnetoresistance sensors. In this letter, we report the crystal structure manipulation of the exchange bias in epitaxial hcp Cr2O3 films. By epitaxially growing twined (10-10) oriented Cr2O3 thin films, of which the c axis and spins of the Cr atoms lie in the film plane, we demonstrate that the exchange bias between Cr2O3 and an adjacent permalloy layer is tuned to in-plane from out-of-plane that has been observed in (0001) oriented Cr2O3 films. This is owing to the collinear exchange coupling between the spins of the Cr atoms and the adjacent FM layer. Such a highly anisotropic exchange bias phenomenon is not possible in polycrystalline films.

cond-mat.mtrl-sci↗