arXiv subjects

Xiuwen Zhang

Publications and source records attributed to Xiuwen Zhang.

At least 19 recordsLinked to original sources

arXiv2026

Spin disorder competing with positional symmetry breaking governs the metal-insulator behavior in oxide paramagnets

Numerous transition-metal oxides have low-temperature, long-range-ordered antiferromagnetic (AFM) states that are generally insulating, and high-temperature, disordered paramagnetic (PM) phases. The latter can be either insulating (predicted here for NaFeO3), or metallic (predicted here and previously observed in NaOsO3). Similar distinctions have been traditionally affected in strongly correlated models by the value used for Coulomb repulsion U. Here we show an alternative, strong-correlation-free (U=0) view suggesting that the distinction between insulating and metallic PM phases is governed by the competition between local magnetic moment disorder and the polymorphous distribution of off-center atomic displacements. Such parameter-free, energy-lowering symmetry breaking density functional calculations provide a framework for understanding metal-insulator behaviors across different quantum materials in terms of measurable local structural and magnetic parameters.

physics.comp-ph↗

arXiv2026

Upward band gap bowing and negative mixing enthalpy in multi-component cubic halide perovskite alloys

Physical properties intermediate between constituents of alloys can be achieved as downward convex positive bowing, upward concave negative bowing, or zero bowing. Such bowing effects are essential for band gap engineering in semiconductor alloys. Upward band gap bowing effects are rather rare, hindering the exploration on half of the available physical property space of alloys. Part of the this being a rare event is related to the need to stabilize an alloy with low mixing enthalpy, so it does not phase separate. In this paper we find via density functional theory that one can satisfy the simultaneous conditions of negative mixing enthalpy and upward band gap bowing in four-component ABX3 halide perovskite alloys in the cubic perovskite structure. Such perovskite alloys have the B-site occupied by a mixture of group IVB and IIB elements that have the IVB-s and IIB-s states in the valence bands and conduction bands, respectively, leaving the delocalized s states strongly repel each other. This s-s repulsion leads to the upward band gap bowing and negative mixing enthalpies simultaneously. Remarkably, we identify a perovskite alloy that has a band gap much larger than all its components. Analogous trends of upward band gap bowing and negative mixing enthalpy also appear in the corresponding three-component and two-component ABX3 halide perovskite alloys. These observations of upward band gap bowing and negative mixing enthalpy will significantly accelerate the design of stable upward band gap bowing alloys in a broad range of material families.

cond-mat.mtrl-sci↗

arXiv2026

Matter with apparent and hidden spin physics

Materials with interesting physical properties are often designed based on our understanding of the target physical effects. The physical properties can be either explicitly observed ("apparent") or concealed by the perceived symmetry ("hidden") but still exist. Both are enabled by specific symmetries and induced by certain physical interactions. Using the underlying approach of condensed matter theory of real materials (rather than schematic model Hamiltonians), we discuss apparent and hidden physics in real materials focusing on the properties of spin splitting and spin polarization. Depending on the enabling symmetries and underlying physical interactions, we classify spin effects into four categories with each having two subtypes; representative materials are pointed out. We then discuss the electric tunability and switch of apparent and hidden spin splitting and polarization in antiferromagnets. Finally, we extend "hidden effects" to views that are farsighted in the sense of resolving the correct atomistic and reciprocal symmetry and replaced by the incorrect higher symmetry. This framework could guide and enable systematic discovery of such intriguing effects.

cond-mat.mtrl-sci↗

arXiv2024

Energy-lowering symmetry breaking creates a flat-band insulator in paramagnetic Nb3Cl8

Ordinary band structure calculations of quantum materials often incorrectly predicted metallic, instead of insulating electronic structure, motivating Mott-Hubbard strong electron correlation as a gapping mechanism. More recently, allowing the formation of local structural symmetry breaking motifs in otherwise ordinary band theory was shown to lower the total energy while predicting insulating gaps when they are observed. An important counter example was recently pointed out whereby the flat band formed in Nb3Cl8 by symmetry breaking is by itself partially occupied, thus failing to account for the observed insulating state. It is shown here that a generalized symmetry breaking involving the cooperative structural and magnetic effects produces in mean-field-like density functional theory an energy lowering insulating phase.

cond-mat.mtrl-sci↗

arXiv2022

Explore of exfoliable multifunctional high-k two-dimensional oxides

As the continuing down-scaling of field-effect transistors (FETs) in more-than-Moore integrated circuits, finding new functional two-dimensional (2D) materials with a higher dielectric constant (high-k) serve as gate dielectrics is critical. Here, we identify dozens of binary 2D oxides by screening potentially exfoliable bulk metal oxides despite of their non-layered structures followed by simulation of the exfoliation process. For dynamically stable materials, we fully characterize their static dielectric constants and electronic structures, among which GeO2(011)/(101)/(1-11) 2D oxides exhibit unusually high k values (85-99), being much higher than the k of the currently highly regarded 2D dielectrics CaF2 (k ~6) and \b{eta}-Bi2SeO5 (k ~22), together with band gap of 3.3 eV. We further design 2D high-k oxides/2D semiconductors (such as MoS2) heterostructures, and determine by DFT calculations whether they can form Van der Waals interfaces to evaluate their compatibility as gate dielectrics in 2D FETs. In addition to dielectric properties, we also explore magnetic and mechanical properties of potentially exfoliable 2D oxides, revealing a number of functional materials that can be studied experimentally, notably including ferromagnetic half semiconductors, non-magnetic spintronic materials, flexible high-k 2D oxides, and auxetic monolayers.

cond-mat.mtrl-sci↗

arXiv2022

Uncovering hidden spin polarization of energy bands in antiferromagnets

Many textbook physical effects in crystals are enabled by some specific symmetries. In contrast to such "apparent effects", "hidden effect X" refers to the general condition where the nominal global system symmetry would disallow the effect X, whereas the symmetry of local sectors within the crystal would enable effect X. Known examples include the hidden Rashba and/or hidden Dresselhaus spin polarization that require spin orbit coupling, but (unlike the apparent Rashba and Dresselhaus counterparts) can exist even in inversion-symmetric non-magnetic crystals. Here we point out that the spin splitting effect that does not require spin-orbit coupling (SOC) can have a hidden spin polarization counterpart in antiferromagnets. We show that such hidden, SOC-independent effects reflect intrinsic properties of the perfect crystal rather than an effect due to imperfections, opening the possibility for experimental realization, and offering a potential way to switch antiferromagnetic ordering.

cond-mat.mtrl-sci↗

arXiv2020

Ferri-chiral compounds with potentially switchable Dresselhaus spin split-ting

Spin splitting of energy bands can be induced by relativistic spin-orbit interactions in materials without inversion symmetry. Whereas polar space group symmetries permit Rashba (R-1) spin splitting with helical spin textures in momentum space, which could be reversed upon switching a ferroelectric polarization via applied electric fields, the ordinary Dresselhaus effect (D-1A) is ac-tive only in materials exhibiting nonpolar noncentrosymmetric crystal classes with atoms occupy-ing exclusively non-polar lattice sites. Consequently, the spin-momentum locking induced by D-1A is not electric field-switchable. An alternative type of Dresselhaus symmetry, referred to as D-1B, exhibits crystal class constraints similar to D-1A (all dipoles add up to zero), but unlike D-1A, at least one polar site is occupied. We find that this behavior exists in a class of ferri-chiral crys-tals, which in principle could be reversed upon a change in chirality. Focusing on alkali metal chalcogenides, we identify NaCu5S3 in the nonentiamorphic ferri-chiral structure, which exhibits CuS3 chiral units differing in the magnitude of their Cu displacements. We then synthesize NaCu5S3 (space group P6322) and confirm its ferri-chiral structure with power x-ray diffraction. Our electronic structure calculations demonstrate it exhibits D-1B spin splitting as well as a ferri-chiral phase transition, revealing spin splitting interdependent on chirality. Our electronic struc-ture calculations show that a few percent biaxial tensile strain can reduce (or nearly quench) the switching barrier separating the monodomain ferri-chiral P6322 states. We discuss what type of external stimuli might switch the chirality so as to reverse the (non-helical) Dresselhaus D-1B spin texture, offering an alternative to the traditional reversal of the (helical) Rashba spin texture.

cond-mat.mtrl-sci↗

arXiv2020

Two-dimensional Topological Semimetals Protected by Symmorphic Symmetries

Two-dimensional (2D) band crossing semimetals (BCSMs) could be used to build a range of novel nanoscale devices such as superlenses and transistors. We find that symmorphic symmetry can protect a new type of robust 2D BCSMs, unlike the previously proposed 2D essential BCSMs protected by non-symmorphic symmetry [Young et al., Phys. Rev. Lett. 115, 126803 (2015)]. This type of symmorphic symmetry protected (SSP) 2D essential BCSMs cannot be pair annihilated without destroying the crystalline symmetries, as opposed to the 2D BCSMs caused by the accidental band crossing. Through group theory analysis, we find that 2D SSP BCSMs can only exist at the K (K') point of Brillouin zone (BZ) of four layer groups and identify nonmagnetic 2D FeB2 as a candidate. Interestingly, nonmagnetic 2D SSP BCSMs can host a single pair of band crossing points (BCPs), whereas nonmagnetic three-dimensional (3D) Weyl semimetals (WSMs) have at least two pairs of band crossing Weyl points. It is found that the single pair of BCPs are robust against any kinds of strain. Furthermore, our calculation suggests that essential 2D SSP BCSMs can be used to realize electric field control of spin-texture, thus are promising candidates for spintronic devices.

cond-mat.mes-hall↗

arXiv2019

Electric field modulation on negative Poisson's ratio of Two-dimensional arsenic and antimony monolayers by first-principles calculation

We have introduced the auxetic effect in MBP-analog Sb for the first time, and achieve NPR modulations on monolayer As and Sb via first-principles calculation. Comparing with As, the monolayer Sb is phonon unstable. By applying an uniaxial strain along each directions, we discovered a zigzag-vertical reversibility on out-of-plane NPR, and the NPR values for monolayer As and Sb are simulated to be -0.125/-0.172 and -0.036/-0.063 by applying strain along zigzag/vertical directions. The NPR values could be significantly manipulated by applying vertical electrical fields, as increased up to 70.3% for monolayer As and decreased up to 55.6% for monolayer Sb. Such intrinsic NPR and electric field modulation could make those monolayers potential applications in auxetic optoelectronic devices, electrodes and sensors, leading to novel multi-functionalities.

physics.app-ph↗

arXiv2018

Uncovering and tailoring hidden Rashba spin-orbit splitting in centrosymmetric crystals

Hidden Rashba and Dresselhaus spin-splittings in centrosymmetric crystals with subunits (sectors) having non-centrosymmetric symmetries (the R-2 and D-2 effects) have been predicted and observed experimentally, but the microscopic mechanism remains unclear. Here we demonstrate that the spin-splitting in R-2 is enforced by specific symmetries (such as the non-symmorphic in the present example) which ensures that the pertinent spin wavefunctions segregate spatially on just one of the two inversion-partner sectors and thus avoid compensation. This finding establishes a common fundamental source for the conventional Rashba (R-1) effect and the R-2 effect, both originating from the local sector symmetries, rather than from the global crystal asymmetry alone for R-1 per se. We further show that the effective Hamiltonian for the R-1 effect is also applicable for the R-2 effect, but applying a symmetry-breaking electric field to an R-2 compound produces different spin-splitting pattern than applying a field to a trivial (non-R-2) centrosymmetric compound.

cond-mat.mtrl-sci↗

arXiv2018

Topological insulators vs. topological Dirac semimetals in honeycomb compounds

Intriguing physical property of materials stems from their chemical constituent whereas the connection between them is often not clear. Here, we uncover a general chemical classification for the two quantum phases in the honeycomb ABX structure--topological insulator (TI) and topological Dirac semimetal (TDSM). First, we find among the 816 (existing as well as hypothetical) calculated compounds, 160 TI's (none were noted before), 96 TDSM's, 282 normal insulators (NI's), and 278 metals. Second, based on this classification, we have distilled a simple chemical regularity based on compound formulae for the selectivity between TI and TDSM: The ABX compounds that are TDSM have B atoms (part of the BX honeycomb layers) that come from the Periodic Table columns XI (Cu, Ag, Au) or XII (Zn, Cd, Hg), or Mg (group II), whereas the ABX compounds whose B atoms come from columns I (Li, Na, K, Rb, Cs) or II (Ca, Sr, Ba) are TI's. Third, focusing on the ABX Bismide compounds that are thermodynamically stable, we find a structural motif that delivers topological insulation and stability at the same time. This study opens the way to simultaneously design new topological materials based on the compositional rules indicated here.

cond-mat.mtrl-sci↗

arXiv2018

High-resolution single-shot ultrafast imaging at ten trillion frames per second

Ultrafast imaging is a powerful tool for studying space-time dynamics in photonic material, plasma physics, living cells, and neural activity. Pushing the imaging speed to the quantum limit could reveal extraordinary scenes about the questionable quantization of life and intelligence, or the wave-particle duality of light. However, previous designs of ultrafast photography are intrinsically limited by framing speed. Here, we introduce a new technique based on a multiple non-collinear optical parametric amplifier principle (MOPA), which readily push the frame rate into the area of ten trillion frames per second with higher spatial resolution than 30 line pairs per millimeter. The MOPA imaging is applied to record the femtosecond early evolution of laser-induced plasma grating in air for the first time. Our approach avoids the intrinsic limitations of previous methods, thus can be potentially optimized for higher speed and resolution, opening the way of approaching quantum limits to test the fundamentals.

physics.ins-det↗

arXiv2018

First principles investigation of pressure related quantum transport in pure black phosphorus devices

We propose a first-principles calculation to investigate the pressure-related transport properties of two kinds of pure monolayer black phosphorus (MBP) devices. Numerical results show that semi-conducting MBP can withstand a considerable compression pressure until it is transformed to be a conductor. The pure MBP devices can work as flexible electronic devices, "negative" pressure sensors, and "positive" pressure sensors depending on the chirality of BP and the magnitude of vertical pressure. When pressure is relatively small, the conductance is robust against the stress for zigzag MBP devices, while shows pressure-sensitive properties for armchair MBP devices. The pressure-stable property of zigzag MBP devices implies a good application prospects as flexible electronic devices, however, the distinct negative increase of conductance versus pressure indicates that armchair MBP devices can work as "negative" pressure sensors. When pressure is relatively large, both armchair MBP devices and zigzag MBP devices show favorable properties of "positive" pressure sensors, whose conductivities rise promptly versus pressure. The longer the device, the more the pressure sensitivity. Band alignment analysis and empirical Wentzel$-$Kramers$-$Brillouin (WKB) approximations are also performed to testify the tunneling process of pure MBP devices from first principles calculation.

cond-mat.mtrl-sci↗

arXiv2017

The enabling electronic motif for topological insulation in ABO3 perovskites and its structural stability

Stable oxide topological insulators (TIs) that could bring together the traditional oxide functionalities with the dissipationless surface states of TIs have been sought for years but none was found. Yet, heavier chalcogenides (selenides, tellurides) were readily found to be TIs. We clarify here the basic contradiction between TI-ness and stability which is maximal for oxides, and trace the basic design principles necessary to identify the window of opportunity of stable TIs. We first identify the electronic motif that can achieve topological band inversion ("topological gene") in ABO3 as being a lone-pair electron-rich B atom (e.g. Te, I, Bi) at the octahedral site. We then illustrate that poorly screened oxide systems with large inversion energies can undergo energy-lowering atomic distortions that remove the band inversion. We identify the coexistence windows of TI functionality and structure stability for different pressures and find that the common cubic ABO3 structures have inversion energies lying outside this coexistence window at zero pressure but could be moved into the coexistence window at moderate pressures. Our study demonstrates the interplay between topological band inversion and structural stability and traces the basic principles needed to design stable oxide topological insulators at ambient pressures.

cond-mat.mtrl-sci↗

arXiv2017

Predicted electronic markers for polytypes of LaOBiS2 examined via angular resolved photoemission spectroscopy

The natural periodic stacking of symmetry-inequivalent planes in layered compounds can lead to the formation of natural superlattices; albeit close in total energy, (thus in their thermodynamic stability), such polytype superlattices can exhibit different structural symmetries, thus have markedly different electronic properties which can in turn be used as "structural markers". We illustrate this general principle on the layered LaOBiS2 compound where density-functional theory (DFT) calculations on the (BiS2)/(LaO)/(BiS2) polytype superlattices reveal both qualitatively and quantitatively distinct electronic structure markers associated with the Rashba physics, yet the total energies are only ~ 0.1 meV apart. This opens the exciting possibility of identifying subtle structural features via electronic markers. We show that the pattern of removal of band degeneracies in different polytypes by the different forms of symmetry breaking leads to new Rashba "mini gaps" with characteristic Rashba parameters that can be determined from spectroscopy, thereby narrowing down the physically possible polytypes. By identifying these distinct DFT-predicted fingerprints via ARPES measurements on LaBiOS2 we found the dominant polytype with small amounts of mixtures of other polytypes. This conclusion, consistent with neutron scattering results, establishes ARPES detection of theoretically established electronic markers as a powerful tool to delineate energetically quasidegenerate polytypes.

cond-mat.mtrl-sci↗

arXiv2016

Minimal Ingredients for Orbital Texture Switches at Dirac Points in Strong Spin-Orbit Coupled Materials

Recent angle resolved photoemission spectroscopy measurements on strong spin-orbit coupled materials have shown an in-plane orbital texture switch at their respective Dirac points, regardless of whether they are topological insulators or "trivial" Rashba materials. This feature has also been demonstrated in a few materials ($\text{Bi}_2\text{Se}_3$, $\text{Bi}_2\text{Te}_3$, and $\text{BiTeI}$) though DFT calculations. Here we present a minimal orbital-derived tight binding model to calculate the electron wave-function in a two-dimensional crystal lattice. We show that the orbital components of the wave-function demonstrate an orbital-texture switch in addition to the usual spin switch seen in spin polarized bands. This orbital texture switch is determined by the existence of three main properties: local or global inversion symmetry breaking, strong spin-orbit coupling, and non-local physics (the electrons are on a lattice). Using our model we demonstrate that the orbital texture switch is ubiquitous and to be expected in many real systems. The orbital hybridization of the bands is the key aspect for understanding the unique wave function properties of these materials, and this minimal model helps to establish the quantum perturbations that drive these hybridizations.

cond-mat.mtrl-sci↗

arXiv2016

Orbital mapping of energy bands and the truncated spin polarization in three-dimensional Rashba semiconductors

Associated with spin-orbit coupling (SOC) and inversion symmetry breaking, Rashba spin polarization opens a new avenue for spintronic applications that was previously limited to ordinary magnets. However, spin polarization effects in actual Rashba systems are far more complicated than what conventional single-orbital models would suggest. By studying via first-principles DFT and a multi-orbital k.p model a 3D bulk Rashba system (free of complications by surface effects) we find that the physical origin of the leading spin polarization effects is SOC-induced hybridization between spin and multiple orbitals, especially those with nonzero orbital angular momenta. In this framework we establish a general understanding of the orbital mapping, common to the surface of topological insulators and Rashba system. Consequently, the intrinsic mechanism of various spin polarization effects, which pertain to all Rashba systems even those with global inversion symmetry, is understood as a manifestation of the orbital textures. This finding suggests a route for designing high spin-polarization materials by considering the atomic-orbital content.

physics.comp-ph↗

arXiv2016

Polytypism in LaOBiS2-type compounds based on different three-dimensional stacking sequences of two-dimensional BiS2 layers

LaOBiS2-type materials have drawn much attention recently because of various interesting physical properties, such as low-temperature superconductivity, hidden spin polarization, and electrically tunable Dirac cones. However, it was generally assumed that each LaOBiS2-type compound has a unique and specific crystallographic structure (with a space group P4/nmm) separated from other phases. Using first-principles total energy and stability calculations we confirm that the previous assignment of the centrosymetric P4/nmm structure to LaOBiS2 is incorrect as a phonon instability renders this structure impossible. Furthermore, we find that the unstable structure is replaced by a family of energetically closely spaced modifications (polytypes) differing by the layer sequences and orientations. We find that the local Bi-S distortion leads to three polytypes of LaOBiS2 with different stacking patterns of the distorted BiS2 layers. The energy difference between the polytypes of LaOBiS2 is merely ~1 meV/u.c., indicating the possible coexistence of all polytypes in the real sample and that the particular distribution of polytypes may be growth-induced. The in-plane distortion can be suppressed by pressure, leading to a phase transition from polytypes to the high-symmetry P4/nmm structure with a pressure larger than 2.5 GPa. In addition, different choices of the intermediate atoms (replacing La) or active atoms (BiS2) could also manifest different ground state structures. One can thus tune the distortion and the ground state by pressure or substituting covalence atoms in LaOBiS2-family.

cond-mat.mtrl-sci↗