arXiv subjects

Xiuzhen Li

Publications and source records attributed to Xiuzhen Li.

3 recordsLinked to original sources

arXiv2026

Supermoir\'e Chern mosaic in helical trilayer WSe2

Helically twisted multilayers offer access to moir\'e physics beyond the single-superlattice paradigm, yet their correlated and topological transport properties remain largely unexplored in semiconductor moir\'e materials. Here we report magnetotransport measurements of helical trilayer WSe2, in which two coupled moir\'e patterns relax into a supermoir\'e landscape composed of inequivalent local topological domains with distinct electronic structures and unequal spatial areas. By electrostatic tuning, we identify a trilayer-hybridized regime where interactions and real-space reconstruction combine to generate a plethora of magnetic and topological states absent in the twisted bilayers. At moir\'e filling factor $\nu$ = -1, we observe a ferromagnetic insulating state that is robust against magnetic field and accompanied by a non-quantized anomalous Hall response ~-4 kOhms. This behaviour is consistent with a time-reversal-symmetry-breaking supermoir\'e Chern mosaic, in which the Hall response arises from the non-cancelling contributions of local domains with opposite Chern character arranged by the relaxed structure. Under strong magnetic fields, a symmetry-broken Chern insulating state (C = 1) emerges near $\nu$ = -2/3, displaying a much larger positive Hall response together with strongly enhanced longitudinal resistance, suggestive of field-reconstructed topological minibands and domain-boundary scattering. These results establish relaxed supermoir\'e semiconductor trilayers as a platform for spatially organized magnetism and topology beyond the bilayer limit.

cond-mat.str-el↗

arXiv2024

Sliding ferroelectric memories and synapses

Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap photovoltaic devices. Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding its fundamental properties, functional devices based on sliding ferroelectrics, the key touchstone toward applications, remain elusive. Here, we demonstrate the rewritable, non-volatile memory devices at room-temperature utilizing a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer molybdenum disulfide. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. Remarkably, flexible SFeMs are achieved with state-of-the-art performances competitive to their rigid counterparts and maintain their performances post bending over 103 cycles. Furthermore, synapse-specific Hebbian forms of plasticity and image recognition with a high accuracy of 97.81% are demonstrated based on flexible SFeMs. Our work demonstrates the sliding ferroelectric memories and synaptic plasticity on both rigid and flexible substrates, highlighting the great potential of sliding ferroelectrics for emerging technological applications in brain-inspired in-memory computing, edge intelligence and energy-efficient wearable electronics.

cond-mat.mes-hall↗

arXiv2023

Electron-infrared phonon coupling in ABC trilayer graphene

Stacking order plays a crucial role in determining the crystal symmetry and has significant impacts on electronic, optical, magnetic, and topological properties. Electron-phonon coupling, which is central to a wide range of intriguing quantum phenomena, is expected to be intricately connected with stacking order. Understanding the stacking order-dependent electron-phonon coupling is essential for understanding peculiar physical phenomena associated with electron-phonon coupling, such as superconductivity and charge density waves. In this study, we investigate the effect of stacking order on electron-infrared phonon coupling in graphene trilayers. By using gate-tunable Raman spectroscopy and excitation frequency-dependent near-field infrared nanoscopy, we show that rhombohedral ABC-stacked trilayer graphene has a significantly stronger electron-infrared phonon coupling strength than the Bernal ABA-stacked trilayer graphene. Our findings provide novel insights into the superconductivity and other fundamental physical properties of rhombohedral ABC-stacked trilayer graphene, and can enable nondestructive and high-throughput imaging of trilayer graphene stacking order using Raman scattering.

physics.optics↗