arXiv subjects

Xizhi Fu

Publications and source records attributed to Xizhi Fu.

5 recordsLinked to original sources

arXiv2026

A Unified Theory of Deterministic Magnetic Switching

The deterministic switching of magnetic order parameters is critically important, as it forms the fundamental basis for manipulating information states in magnetic memory devices. This work presents a general theoretical framework that unifies the mechanisms of magnetic switching by introducing the concept of switching symmetry and establishing that the necessary condition for deterministic switching is the breaking of all switching symmetries, which can be achieved through asymmetric states, asymmetric barriers, and asymmetric torques. Our theory can successfully and universally explain all reported experimental cases of deterministic magnetic switching and provides unified and simple design principles for new switching devices of all magnetic materials without the need of complicated simulations.

cond-mat.other↗

arXiv2025

Broadband nonlinear Hall response and multiple wave mixing in a room temperature altermagnet

Crystalline symmetries determine the linear and nonlinear response of materials to external stimuli such as mechanical pressure and electromagnetic fields, governing phenomena such as piezoelectricity, optical activity, and multiple wave mixing with wide ranging technological applications. Altermagnets present a new class of materials with magnetic crystalline order where specific crystal symmetry operations connect antiferromagnetic sublattices, leading to non-relativistic spin-splitting of the electronic band structure. Hence, the electric material properties of altermagnets should uniquely mirror these underlying symmetry properties, potentially giving rise to novel phenomena in response to external driving fields. Here, we report the discovery of a broadband third-order nonlinear anomalous Hall effect in altermagnetic CrSb at room temperature. The comparison of our observations with symmetry analyses and model calculations shows that this nonlinear Hall response is induced by the nonlinear electric susceptibility of a Berry curvature quadrupole, which exists within the spin-split band structure of CrSb and is characterized by the underlying crystalline and magnetic symmetries. We then utilize this third-order nonlinear electric susceptibility of CrSb to realize a multiple wave mixing device with pronounced four wave mixing output, which could, in principle, be extended to THz frequencies. Our study discovers that the crystalline magnetic order of altermagnets determines their nonlinear electric material properties, which could facilitate applications in high-frequency electronics, THz generation, communication networks, and energy harvesting.

cond-mat.mes-hall↗

arXiv2025

Discovery of a large magnetic nonlinear Hall effect in an altermagnet

Since Edwin Halls groundbreaking discovery of the Hall effect in 1879, magnetism, spin, and quantization have been expanding the scope of Hall effects, continuously driving transformative progress in science and technology. Among them, the latest nonlinear Hall effect (NLHE), where longitudinal electric field tunes quantum geometry to generate nonlinear Hall voltage, attracts wide attention as a sensitive probe of topological phases across a wide range of materials. Here, we report a new Hall effect member: the magnetic nonlinear Hall effect (MNLHE), characterized by a quadratic Hall conductivity dependence on magnetic field, rather than electric field as in NLHE. This finding relies on an altermagnet, Mn5Si3 thin film, whose alternating-sign Berry curvatures ensure higher-order MNLHE clearly distinguishable from the first-order anomalous Hall effect. The observed quadratic dependence originates from chiral next-nearest-neighbor hopping processes that acquire magnetic-exchange-driven Zeeman energies and Haldane-like chiral flux phases. Remarkably, this MNLHE is non-analytic, as reversing the magnetic field flips the alternating spin-splitting bands and reverses the hopping chirality, which is absent in traditional NLHE. Beyond offering a distinctive transport fingerprint for altermagnet Mn5Si3 thin film, this MNLHE is large and unsaturated up to 60 T, providing opportunities for pulsed high-field sensing technologies in both fundamental researches and engineering applications.

cond-mat.mtrl-sci↗

arXiv2024

Observation of non-volatile anomalous Nernst effect in altermagnet with collinear Néel vector

Anomalous Nernst effect (ANE), a widely investigated transverse thermoelectric effect that converts waste heat into electrical energy with remarkable flexibility and integration capability, has been extended to antiferromagnets with non-collinear spin texture recently. ANE in compensated magnet with collinear Néel vector will bring more opportunities to construct magnetic-field-immune and ultrafast transverse thermoelectric converters, but remains unachieved for long. It is due to the degenerated band structure of traditional collinear compensated magnet excludes non-zero Berry curvature. Here, we realize non-volatile ANE in altermagnet Mn5Si3 thin film with collinear Neel vector, whose unique alternating spin-splitting band structure plays vital role in creating non-zero Berry curvature and hotpots of anomalous Nernst conductivity near band intersections. Interestingly, ANE is relatively weak in stoichiometric Mn5Si3, but undergoes a sixfold enhancement through strategically raising the Fermi level by additional Mn doping, indicating sensitive intrinsic influence from specific location of the Fermi level on ANE in altermagnet. Moreover, our investigation reveals a unique Neel-vector-dependent temperature-scaling relationship of anomalous Nernst conductivity in Mn5Si3. Our work not only fills a longstanding gap by confirming the presence of non-volatile ANE in collinear compensated magnet, but also enlightens thermoelectric physics related to exotic spin-splitting band structure in altermagnet.

cond-mat.mtrl-sci↗

arXiv2024

Electrical 180o switching of Néel vector in spin-splitting antiferromagnet

Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90o or 120o switching of Néel vector, which unavoidably require multiple writing channels that contradicts ultra-dense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier, and experimentally achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3. Such a 180o switching is read out by the Néel vector-induced anomalous Hall effect. Based on our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high and low resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.

cond-mat.mtrl-sci↗