arXiv subjects

Xu-Cun Ma

Publications and source records attributed to Xu-Cun Ma.

At least 37 records · Page 2Linked to original sources

arXiv2022

Direct observation of nodeless superconductivity and phonon modes in electron-doped copper oxide Sr$_{1-x}$Nd$_x$CuO$_2$

The microscopic understanding of high-temperature superconductivity in cuprates has been hindered by the apparent complexity of crystal structures in these materials. We used scanning tunneling microscopy and spectroscopy to study an electron-doped copper oxide compound Sr$_{1-x}$Nd$_x$CuO$_2$ that has only bare cations separating the CuO$_2$ planes and thus the simplest infinite-layer structure among all cuprate superconductors. Tunneling conductance spectra of the major CuO$_2$ planes in the superconducting state revealed direct evidence for a nodeless pairing gap, regardless of variation of its magnitude with the local doping of trivalent neodymium. Furthermore, three distinct bosonic modes are observed as multiple peak-dip-hump features outside the superconducting gaps and their respective energies depend little on the spatially varying gaps. Along with the bosonic modes with energies identical to those of the external, bending and stretching phonons of copper oxides, our findings indicate their origin from lattice vibrations rather than spin excitations.

cond-mat.supr-con↗

arXiv2022

Percolative Superconductivity in Electron-Doped Sr$_{1-x}$Eu$_{x}$CuO$_{2+y}$ Films

Electron-doped infinite-layer Sr$_{1-x}$Eu$_{x}$CuO$_{2+y}$ films over a wide doping range have been prepared epitaxially on SrTiO$_3$(001) using reactive molecular beam epitaxy. In-plane transport measurements of the single crystalline samples reveal a dome-shaped nodeless superconducting phase centered at $x$ $\sim$ 0.15, a Fermi-liquid behavior and pronounced upturn in low temperature resistivity. We show that the resistivity upturn follows square-root temperature dependence, suggesting the emergence of superconductivity via a three-dimensional percolation process. The percolative superconductivity is corroborated spectroscopically by imaging the electronic phase separation between superconducting and metallic phases with low-temperature scanning tunneling microscopy. Furthermore, we visualize interstitial and apical oxygen anions that rapidly increase in number as $x>$ 0.12, and elucidate their impacts on the superconductivity and normal-state resistivity.

cond-mat.supr-con↗

arXiv2022

Berry-phase switch in electrostatically-confined topological surface states

Here we visualize the trapping of topological surface states in the circular n-p junctions on the top surface of the 7-quintuple-layer three dimensional (3D) topological insulator (TI) Sb2Te3 epitaxial films. As shown by spatially- and field-dependent tunneling spectra, these trapped resonances show field-induced splittings between the degenerate time-reversal-symmetric states at zero magnetic field. These behaviors are attributed unambiguously to Berry-phase switch by comparing the experimental data with both numerical and semi-classical simulations. The successful electrostatic trapping of topological surface states in epitaxial films and the observation of Berry-phase switch provide a rich platform of exploiting new ideas for TI-based quantum devices.

cond-mat.mes-hall↗

arXiv2022

Tuning the electronic states and superconductivity in alkali fulleride films

The successful preparation of superconducting alkali fulleride (A$_x$C$_{60}$, A = K, Rb, Cs) films using state-of-the-art molecular beam epitaxy overcomes the disadvantages of the air-sensitivity and phase separation in bulk A$_x$C$_{60}$, enabling for the first time a direct investigation of the superconductivity in alkali fullerides on the molecular scale. In this paper, we briefly review recent cryogenic scanning tunneling microscopy results of the structural, electronic, and superconducting properties of the fcc A$_x$C$_{60}$ films grown on graphitized SiC substrates. Robust $s$-wave superconductivity is revealed against the pseudogap, electronic correlation, non-magnetic impurities, and merohedral disorder. By controlling the alkali metal species, film thickness, and electron doping, we systematically tune the C$_{60}^{x-}$ orientational orderings and superconductivity in A$_x$C$_{60}$ films and then complete a unified phase diagram of superconducting gap size vs electronic correlation and doping. These investigations are conclusive and elucidated that the $s$-wave superconductivity retains in alkali fullerides despite of the electronic correlation and presence of pseudogap.

cond-mat.supr-con↗

arXiv2022

Selective Trapping of Hexagonally Warped Topological Surface States in a Triangular Quantum Corral

The surface of a three-dimensional topological insulator (TI) hosts two-dimensional massless Dirac fermions (DFs), the gapless and spin-helical nature of which yields many exotic phenomena, such as the immunity of topological surface states (TSS) to back-scattering. This leads to their high transmission through surface defects or potential barriers. Quantum corrals, previously elaborated on metal surfaces, can act as nanometer-sized electronic resonators to trap Schrödinger electrons by quantum confinement. It is thus intriguing, concerning their peculiar nature, to put the Dirac electrons of TSS to the test in similar circumstances. Here, we report the behaviors of TSS in a triangular quantum corral (TQC) fabricated by epitaxially growing Bi bilayer nanostructures on the surfaces of Bi2Te3 films. Unlike a circular corral, the TQC is supposed to be totally transparent for DFs. By mapping the electronic structure of TSS inside TQCs through a low-temperature scanning tunneling microscope in the real space, both the trapping and de-trapping behaviors of the TSS electrons are observed. The selection rules are found to be governed by the geometry and spin texture of the constant energy contour of TSS upon the strong hexagonal warping in Bi2Te3. Careful analysis of the quantum interference patterns of quasi-bound states yields the corresponding wave vectors of trapped TSS, through which two trapping mechanisms favoring momenta in different directions are uncovered. Our work indicates the extended nature of TSS and elucidates the selection rules of the trapping of TSS in the presence of a complicated surface state structure, giving insights into the effective engineering of DFs in TIs.

cond-mat.mes-hall↗

arXiv2022

Semiconductor-metal phase transition and emergent charge density waves in 1T-ZrX$_2$ (X = Se, Te) at the two-dimensional limit

Charge density wave (CDW) is a collective quantum phenomenon in metals and features a wave-like modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX$_2$ (X = Se, Te) ultra-thin films, accompanied by a commensurate 2 $\times$ 2 CDW order. Furthermore, we observed a CDW energy gap up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX$_2$ films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of Zr 4d-derived elliptical electron conduction band at the corners of the Brillouin zone.

cond-mat.mtrl-sci↗

arXiv2021

Honeycomb lattice in metal-rich chalcogenide Fe2Te

Two-dimensional honeycomb crystals have inspired intense research interest for their novel properties and great potential in electronics and optoelectronics. Here, through molecular beam epitaxy on SrTiO3(001), we report successful epitaxial growth of metal-rich chalcogenide Fe2Te, a honeycomb-structured film that has no direct bulk analogue, under Te-limited growth conditions. The structural morphology and electronic properties of Fe2Te are explored with scanning tunneling microscopy and angle resolved photoemission spectroscopy, which reveal electronic bands cross the Fermi level and nearly flat bands. Moreover, we find a weak interfacial interaction between Fe2Te and the underlying substrates, paving a newly developed alternative avenue for honeycomb-based electronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Experimental observation of pseudogap in a modulation-doped Mott insulator: Sn/Si(111)-($\sqrt{3}\times \sqrt{3}$)-R30$^\textrm{o}$

Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a combinatorial molecular beam epitaxy system integrated with cryogenic scanning tunneling microscopy, we investigate the electronic structure of a modulation-doped Mott insulator Sn/Si(111)-($\sqrt{3}\times \sqrt{3}$)-R30$^\textrm{o}$. In underdoped regions, we observe a universal pseudogap opening around the Fermi level, which changes little with the applied magnetic field and the occurrence of Sn vacancies. The pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the Mott insulating phase. Our findings, along with the previously observed superconductivity at a higher doping level, are highly reminiscent of the electronic phase diagram in the doped copper oxide compounds.

cond-mat.str-el↗

arXiv2021

Atomic-Scale Probing of Heterointerface Phonon Bridges in Nitride Semiconductor

Interface phonon modes that are generated by several atomic layers at the heterointerface play a major role in the interface thermal conductance for nanoscale high-power devices such as nitride-based high-electron-mobility transistors and light emitting diodes. Here we measure the local phonon spectra across AlN/Si and AlN/Al interfaces using atomically resolved vibrational electron energy-loss spectroscopy in a scanning transmission electron microscope. At the AlN/Si interface, we observe various localized phonon modes, of which the extended and interfacial modes act as bridges to connect the bulk AlN modes and bulk Si modes, and are expected to boost the inelastic phonon transport thus substantially contribute to interface thermal conductance. In comparison, no such phonon bridge is observed at the AlN/Al interface, for which partially extended modes dominate the interface thermal conductivity. This work provides valuable insights into understanding the interfacial thermal transport in nitride semiconductors and useful guidance for thermal management via interface engineering.

cond-mat.mes-hall↗

arXiv2021

Gate Tunable Supercurrent in Josephson Junctions Based on Bi2Te3 Topological Insulator Thin Films

We report transport measurements on Josephson junctions consisting of Bi2Te3 topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length L = 134 nm, the critical supercurrent Ic can be modulated by an electrical gate which tunes the carrier type and density of the TI film. Ic can reach a minimum when the TI is near the charge neutrality regime with the Fermi energy lying close to the Dirac point of the surface state. In the p-type regime the Josephson current can be well described by a short ballistic junction model. In the n-type regime the junction is ballistic at 0.7 K < T < 3.8 K while for T < 0.7 K the diffusive bulk modes emerge and contribute a larger Ic than the ballistic model. We attribute the lack of diffusive bulk modes in the p-type regime to the formation of p-n junctions. Our work provides new clues for search of Majorana zero mode in TI-based superconducting devices.

cond-mat.supr-con↗

arXiv2021

Merohedral disorder and impurity impacts on superconductivity of fullerenes

Local quasiparticle states around impurities provide essential insight into the mechanism of unconventional superconductivity, especially when the candidate materials are proximate to an antiferromagnetic Mott-insulating phase. While such states have been reported in atom-based cuprates and iron-based compounds, they are unexplored in organic superconductors which feature tunable molecular orientation. Here we employ scanning tunneling microscopy and spectroscopy to reveal multiple forms of robustness of an exotic $s$-wave superconductivity in epitaxial Rb$_3$C$_{60}$ films against merohedral disorder, non-magnetic single impurities and step edges at the atomic scale. Also observed have been Yu-Shiba-Rusinov (YSR) states induced by deliberately incurred Fe adatoms that act as magnetic scatters. The bound states display abrupt spatial decay and vary in energy with the Fe adatom registry. Our results and the universal optimal superconductivity at half-filling point towards local electron pairing in which the multiorbital electronic correlations and intramolecular phonons together drive the high-temperature superconductivity of doped fullerenes.

cond-mat.supr-con↗

arXiv2021

Charge density waves and Fermi level pinning in monolayer and bilayer SnSe$_2$

Materials with reduced dimensionality often exhibit exceptional properties that are different from their bulk counterparts. Here we report the emergence of a commensurate 2 $\times$ 2 charge density wave (CDW) in monolayer and bilayer SnSe$_2$ films by scanning tunneling microscope. The visualized spatial modulation of CDW phase becomes prominent near the Fermi level, which is pinned inside the semiconductor band gap of SnSe$_2$. We show that both CDW and Fermi level pinning are intimately correlated with band bending and virtual induced gap states at the semiconductor heterointerface. Through interface engineering, the electron-density-dependent phase diagram is established in SnSe$_2$. Fermi surface nesting between symmetry inequivalent electron pockets is revealed to drive the CDW formation and to provide an alternative CDW mechanism that might work in other compounds.

cond-mat.mtrl-sci↗

arXiv2020

Origin of the Electronic Structure in Single-Layer FeSe/SrTiO3 Films

The accurate theoretical description of the underlying electronic structures is essential for understanding the superconducting mechanism of iron-based superconductors. Compared to bulk FeSe, the superconducting single-layer FeSe/SrTiO3 films exhibit a distinct electronic structure consisting of only electron Fermi pockets, due to the formation of a new band gap at the Brillouin zone (BZ) corners and an indirect band gap between the BZ center and corners. Although intensive studies have been carried out, the origin of such a distinct electronic structure and its connection to bulk FeSe remain unclear. Here we report a systematic study on the temperature evolution of the electronic structure in single-layer FeSe/SrTiO3 films by angle-resolved photoemission spectroscopy. A temperature-induced electronic phase transition was clearly observed at 200 K, above which the electronic structure of single-layer FeSe/SrTiO3 films restored to that of bulk FeSe, characterized by the closing of the new band gap and the vanishing of the indirect band gap. Moreover, the interfacial charge transfer effect induced band shift of ~ 60 meV was determined for the first time. These observations not only show the first direct evidence that the electronic structure of single-layer FeSe/SrTiO3 films originates from bulk FeSe through a combined effect of an electronic phase transition and an interfacial charge transfer, but also provide a quantitative basis for theoretical models in describing the electronic structure and understanding the superconducting mechanism in single-layer FeSe/SrTiO3 films.

cond-mat.supr-con↗

arXiv2020

Molecular beam epitaxy growth and surface structure of Sr1-xNdxCuO2 cuprate films

We report on the epitaxial growth and surface structure of infinite-layer cuprate Sr1-xNdxCuO2 films on SrTiO3(001) substrates by combining ozone-assisted molecular beam epitaxy and in situ scanning tunneling microscopy. Careful substrate temperature and flux control has been used to achieve single-phase, stoichiometric, and c-axis oriented films. The surface of the films is usually characterized by a mixed CuO2 surface and gridlike superstructure. The superstructure exhibits a periodicity of 3.47 nm that corresponds to a coincidence lattice between the overlayer peroxide SrO2 and underlying CuO2 plane, and gives rise to a conductance spectrum that is distinct from the Mott-Hubbard band structure of CuO2. At a higher Nd composition x > 0.1, a (2 x 2) surface characteristic of the hole-doped CuO2 emerges, which we ascribe to the intake of apical oxygens in the intervening Sr planes.

cond-mat.supr-con↗

arXiv2020

Electronic inhomogeneity and band structure on superstructural CuO2 planes of infinite-layer Sr0.94La0.06CuO2+y films

Scanning tunneling microscopy and spectroscopy are utilized to study the atomic-scale structure and electronic properties of infinite-layer Sr0.94La0.06CuO2+y films prepared on SrRuO3-buffered SrTiO3(001) substrate by ozone-assisted molecular beam epitaxy. Incommensurate structural supermodulation with a period of 24.5Å is identified on the CuO2-terminated surface, leading to characteristic stripes running along the 45o direction with respect to the Cu-O-Cu bonds. Spatially resolved tunneling spectra reveal substantial inhomogeneity on a nanometer length scale and emergence of in-gap states at sufficient doping. Despite the Fermi level shifting up to 0.7 eV, the charge-transfer energy gap of the CuO2 planes remains fundamentally unchanged at different doping levels. The occurrence of the CuO2 superstructure is constrained in the surface region and its formation is found to link with oxygen intake that serves as doping agent of holes in the epitaxial films.

cond-mat.supr-con↗

arXiv2020

Direct visualization of ambipolar Mott transition in cuprate CuO2 planes

Identifying the essence of doped Mott insulators is one of the major outstanding problems in condensed matter physics and the key to understanding the high-temperature superconductivity in cuprates. We report real space visualization of Mott transition in Sr1-xLaxCuO2+y cuprate films that cover the entire electron- and hole-doped regimes. Tunneling conductance measurements directly on the cooper-oxide (CuO2) planes reveal a systematic shift in the Fermi level, while the fundamental Mott-Hubbard band structure remains unchanged. This is further demonstrated by exploring atomic-scale electronic response of CuO2 to substitutional dopants and intrinsic defects in a sister compound Sr0.92Nd0.08CuO2. The results could be better explained in the framework of self-modulation doping, similar to that in semiconductor heterostructures, and form a basis for developing any microscopic theories for cuprate superconductivity.

cond-mat.supr-con↗

arXiv2020

Stoichiometry and defect superstructures in epitaxial FeSe films on SrTiO3

Cryogenic scanning tunneling microscopy is employed to investigate the stoichiometry and defects of epitaxial FeSe thin films on SrTiO3(001) substrates under various post-growth annealing conditions. Low-temperature annealing with an excess supply of Se leads to formation of Fe vacancies and superstructures, accompanied by a superconductivity (metal)-to-insulator transition in FeSe films. By contrast, high-temperature annealing could eliminate the Fe vacancies and superstructures, and thus recover the high-temperature superconducting phase of monolayer FeSe films. We also observe multilayer FeSe during low-temperature annealing, which is revealed to link with Fe vacancy formation and adatom migration. Our results document very special roles of film stoichiometry and help unravel several controversies in the properties of monolayer FeSe films.

cond-mat.supr-con↗

arXiv2019

Visualizing molecular orientational ordering and electronic structure in CsnC60 fulleride films

Alkali-doped fullerides exhibit a wealth of unusual phases that remain controversial by nature. Here we report a cryogenic scanning tunneling microscopy study of the sub-molecular structural and electronic properties of expanded fullerene C60 films with various cesium (Cs) doping. By varying the discrete charge states and film thicknesses, we reveal a large tunability of orientational ordering of C60 anions, yet the tunneling conductance spectra are all robustly characteristic of energy gaps, hallmarks of Jahn-Teller instability and electronic correlations. The Fermi level lies halfway within the insulating gap for stoichiometric Cs doping level of n = 1, 2, 3 and 4, apart from which it moves toward band edges with concomitant electronic states within the energy gap. Our findings establish the universality of Jahn-Teller instability, and clarify the relationship among the doping, structural and electronic structures in CsnC60 fullerides.

cond-mat.supr-con↗