arXiv subjects

Xu-Cun Ma

Publications and source records attributed to Xu-Cun Ma.

At least 73 records · Page 4Linked to original sources

arXiv2016

Observation of Double-Dome Superconductivity in Potassium-Doped FeSe Thin Films

We report on the emergence of two disconnected superconducting domes in alkali-metal potassium (K)-doped FeSe ultra-thin films grown on graphitized SiC(0001). The superconductivity exhibits hypersensitivity to K dosage in the lower-Tc dome, whereas in the heavily electron-doped higher-Tc dome it becomes spatially homogeneous and robust against disorder, supportive of a conventional Cooper-pairing mechanism. Furthermore, the heavily K-doped multilayer FeSe films all reveal a large superconducting gap of ~ 14 meV, irrespective of film thickness, verifying the higher-Tc superconductivity only in the topmost FeSe layer. The unusual finding of a double-dome superconducting phase has stepped towards the mechanistic understanding of superconductivity in FeSe-derived superconductors.

cond-mat.supr-con↗

arXiv2016

Visualizing the elongated vortices in $γ$-Ga nanostrips

We study the magnetic response of superconducting $γ$-Ga via low temperature scanning tunneling microscopy and spectroscopy. The magnetic vortex cores rely substantially on the Ga geometry, and exhibit an unexpectedly-large axial elongation with aspect ratio up to 40 in rectangular Ga nano-strips (width $l$ $<$ 100 nm). This is in stark contrast with the isotropic circular vortex core in a larger round-shaped Ga island. We suggest that the unusual elongated vortices in Ga nanostrips originate from geometric confinement effect probably via the strong repulsive interaction between the vortices and Meissner screening currents at the sample edge. Our finding provides novel conceptual insights into the geometrical confinement effect on magnetic vortices and forms the basis for the technological applications of superconductors.

cond-mat.supr-con↗

arXiv2015

Atomically Resolved FeSe/SrTiO3(001) Interface Structure by Scanning Transmission Electron Microscopy

Interface-enhanced high-temperature superconductivity in one unit-cell (UC) FeSe films on SrTiO3(001) (STO) substrate has recently attracted much attention in condensed matter physics and material science. By combined in-situ scanning tunneling microscopy/spectroscopy (STM/STS) and ex-situ scanning transmission electron microscopy (STEM) studies, we report on atomically resolved structure including both lattice constants and actual atomic positions of the FeSe/STO interface under both non-superconducting and superconducting states. We observed TiO2 double layers (DLs) and significant atomic displacements in the top two layers of STO, lattice compression of the Se-Fe-Se triple layer, and relative shift between bottom Se and topmost Ti atoms. By imaging the interface structures under various superconducting states, we unveil a close correlation between interface structure and superconductivity. Our atomic-scale identification of FeSe/STO interface structure provides useful information on investigating the pairing mechanism of this interface-enhanced high-temperature superconducting system.

cond-mat.supr-con↗

arXiv2015

Mapping the Electronic Structure of Each Ingredient Oxide Layer of High-$T_\textrm{c}$ Cuprate Superconductor Bi2Sr2CaCu2O8+δ

Understanding the mechanism of high transition temperature (Tc) superconductivity in cuprates has been hindered by the apparent complexity of their multilayered crystal structure. Using a cryogenic scanning tunneling microscopy, we report on layer-by-layer probing of the electronic structures of all ingredient planes (BiO, SrO, CuO2) of Bi2Sr2CaCu2O8+δ superconductor prepared by argon-ion bombardment and annealing technique. We show that the well-known pseudogap (PG) feature observed by STM is inherently a property of the BiO planes and thus irrelevant directly to Cooper pairing. The SrO planes exhibit an unexpected Van Hove singularity near the Fermi level, while the CuO2 planes are exclusively characterized by a smaller gap inside the PG. The small gap becomes invisible near Tc, which we identify as the superconducting gap. The above results constitute severe constraints on any microscopic model for high Tc superconductivity in cuprates.

cond-mat.supr-con↗

arXiv2015

Band engineering of Dirac surface states in topological insulators-based van der Waals heterostructures

The existence of gapless Dirac surface band of a three dimensional (3D) topological insulator (TI) is guaranteed by the non-trivial topological character of the bulk band, yet the surface band dispersion is mainly determined by the environment near the surface. In this Letter, through in-situ angle-resolved photoemission spectroscopy (ARPES) and the first-principles calculation on 3D TI-based van der Waals heterostructures, we demonstrate that one can engineer the surface band structures of 3D TIs by surface modifications without destroying their topological non-trivial property. The result provides an accessible method to independently control the surface and bulk electronic structures of 3D TIs, and sheds lights in designing artificial topological materials for electronic and spintronic purposes.

cond-mat.mes-hall↗

arXiv2015

Probing Dirac Fermion Dynamics in Topological Insulator Bi$_2$Se$_3$ Films with Scanning Tunneling Microscope

Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator Bi$_2$Se$_3$ ultrathin films. At two-dimensional limit, bulk electrons becomes quantized and the quantization can be controlled by film thickness at single quintuple layer level. By studying the spatial decay of standing waves (quasiparticle interference patterns) off steps, we measure directly the energy and film thickness dependence of phase relaxation length $l_ϕ$ and inelastic scattering lifetime $τ$ of topological surface-state electrons. We find that $τ$ exhibits a remarkable $(E-E_F)^{-2}$ energy dependence and increases with film thickness. We show that the features revealed are typical for electron-electron scattering between surface and bulk states.

cond-mat.mes-hall↗

arXiv2015

Molecular beam epitaxy growth and scanning tunneling microscopy study of TiSe$_2$ ultrathin films

Molecular beam epitaxy is used to grow TiSe2 ultrathin films on graphitized SiC(0001) substrate. TiSe2films proceed via a nearly layer-by-layer growth mode and exhibit two dominant types of defects, identified as Se vacancy and interstitial, respectively. By means of scanning tunneling microscopy, we demonstrate that the well-established charge density waves can survive in single unit-cell (one triple layer) regime, and find a gradual reduction in their correlation length as the density of surface defects in TiSe2 ultrathin films increases. Our findings offer important insights into the nature of charge density wave in TiSe2, and also pave a material foundation for potential applications based on the collective electronic states.

cond-mat.mtrl-sci↗

arXiv2015

Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate

The stoichiometric "111" iron-based superconductor, LiFeAs, has attacted great research interest in recent years. For the first time, we have successfully grown LiFeAs thin film by molecular beam epitaxy (MBE) on SrTiO3(001) substrate, and studied the interfacial growth behavior by reflection high energy electron diffraction (RHEED) and low-temperature scanning tunneling microscope (LT-STM). The effects of substrate temperature and Li/Fe flux ratio were investigated. Uniform LiFeAs film as thin as 3 quintuple-layer (QL) is formed. Superconducting gap appears in LiFeAs films thicker than 4 QL at 4.7 K. When the film is thicker than 13 QL, the superconducting gap determined by the distance between coherence peaks is about 7 meV, close to the value of bulk material. The ex situ transport measurement of thick LiFeAs film shows a sharp superconducting transition around 16 K. The upper critical field, Hc2(0)=13.0 T, is estimated from the temperature dependent magnetoresistance. The precise thickness and quality control of LiFeAs film paves the road of growing similar ultrathin iron arsenide films.

cond-mat.mtrl-sci↗

arXiv2015

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10000 %, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.

cond-mat.mtrl-sci↗

arXiv2014

Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms

With angle-resolved photoemission spectroscopy, gap-opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which however show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron doping level. Scanning tunneling microscopy and first principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in Bi2Se3 matrix, which contribute to the observed chemical potential dependent gap-opening in the Dirac surface states without long-range ferromagnetic order.

cond-mat.mtrl-sci↗

arXiv2014

Imaging the Electron-Boson Coupling in Superconducting FeSe

Scanning tunneling spectroscopy has been used to reveal signatures of a bosonic mode in the local quasiparticle density of states of superconducting FeSe films. The mode appears below Tc as a 'dip-hump' feature at energy Ω~ 4.7 kBTc beyond the superconducting gap Δ. Spectra on strained regions of the FeSe films reveal simultaneous decreases in Δand Ω. This contrasts with all previous reports on other high-Tc superconductors, where Δlocally anti-correlates with Ω. A local strong coupling model is found to reconcile the discrepancy well, and to provide a unified picture of the electron-boson coupling in unconventional superconductors.

cond-mat.supr-con↗

arXiv2013

Experimental Proof of Universal Conductance Fluctuation in Quasi-1D Epitaxial Bi$_{2}$Se$_{3}$ Wires

We report on conductance fluctuation in quasi-one-dimensional wires made of epitaxial Bi$_{2}$Se$_{3}$ thin film. We found that this type of fluctuation decreases as the wire length becomes longer and that the amplitude of the fluctuation is well scaled to the coherence, thermal diffusion, and wire lengths, as predicted by conventional universal conductance fluctuation (UCF) theory. Additionally, the amplitude of the fluctuation can be understood to be equivalent to the UCF amplitude of a system with strong spin-orbit interaction and no time-reversal symmetry. These results indicate that the conductance fluctuation in Bi$_{2}$Se$_{3}$ wires is explainable through UCF theory. This work is the first to verify the scaling relationship of UCF in a system with strong spin-orbit interaction.

cond-mat.mes-hall↗

arXiv2012

Carrier-independent ferromagnetism and giant anomalous Hall effect in magnetic topological insulator

Breaking the time-reversal symmetry of a topological insulator (TI) by ferromagnetism can induce exotic magnetoelectric phenomena such as quantized anomalous Hall (QAH) effect. Experimental observation of QAH effect in a magnetically doped TI requires ferromagnetism not relying on the charge carriers. We have realized the ferromagnetism independent of both polarity and density of carriers in Cr-doped BixSb2-xTe3 thin films grown by molecular beam epitaxy. Meanwhile, the anomalous Hall effect is found significantly enhanced with decreasing carrier density, with the anomalous Hall angle reaching unusually large value 0.2 and the zero field Hall resistance reaching one quarter of the quantum resistance (h/e2), indicating the approaching of the QAH regime. The work paves the way to ultimately realize QAH effect and other unique magnetoelectric phenomena in TIs.

cond-mat.mtrl-sci↗

arXiv2012

Suppression of Superconductivity by Twin Boundaries in FeSe

Low-temperature scanning tunneling microscopy and spectroscopy are employed to investigate twin boundaries in stoichiometric FeSe films grown by molecular beam epitaxy. Twin boundaries can be unambiguously identified by imaging the 90° change in the orientation of local electronic dimers from Fe site impurities on either side. Twin boundaries run at approximately 45° to the Fe-Fe bond directions, and noticeably suppress the superconducting gap, in contrast with the recent experimental and theoretical findings in other iron pnictides. Furthermore, vortices appear to accumulate on twin boundaries, consistent with the degraded superconductivity there. The variation in superconductivity is likely caused by the increased Se height in the vicinity of twin boundaries, providing the first local evidence for the importance of this height to the mechanism of superconductivity.

cond-mat.supr-con↗

arXiv2012

Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3

In this study, we address the phase coherent transport in a sub-micrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing the weak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K. The WAL effect is well described by the Hikami-Larkin-Nagaoka model, where the temperature dependence of the coherence length indicates that electron conduction occurs quasi-one-dimensionally in the narrow Hall bar. The temperature-dependent magnetoresistance fluctuation is analyzed in terms of the universal conductance fluctuation, which gives a coherence length consistent with that derived from the WAL effect.

cond-mat.mes-hall↗

arXiv2011

Interplay between topological insulators and superconductors

Topological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films contacted by superconducting (In, Al and W) electrodes. The resistance of the film shows an abrupt and significant upturn when the electrodes become superconducting. In turn, the Bi2Se3 film strongly weakens the superconductivity of the electrodes, significantly reducing both their transition temperatures and critical fields. A possible interpretation of these results is that the superconducting electrodes are accessing the surface states and the experimental results are the consequence of the interplay between the Cooper pairs of the electrodes and the spin polarized current of the surface states in Bi2Se3.

cond-mat.mtrl-sci↗

arXiv2011

Current induced anisotropic magnetoresistance in topological insulator films

Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). Detecting these surface states by transport measurement, which might at first appear to be the most direct avenue, was shown to be much more challenging than expected. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films. Measurements under in-plane magnetic field, along and perpendicular to the bias current show opposite magnetoresistance. We argue that this contrasting behavior is related to the locking of the spin and current direction providing evidence for helical spin structure of the topological surface states.

cond-mat.mtrl-sci↗

arXiv2011

Evidence for electron-electron interaction in topological insulator thin films

We consider in our work high quality single crystal thin films of Bi2Se3, grown by molecular beam epitaxy, both with and without Pb doping. Our ARPES data demonstrate topological surface states with a Fermi level lying inside the bulk band gap in the Pb doped filims. Transport data show weak localization behavior, as expected for a 2D system, but a detailed analysis within the standard theoretical framework of diffusive transport shows that the temperature and magnetic field dependences of resistance cannot be reconciled in a theory that neglects inter-electron interactions. We demonstrate that an excellent account of quantum corrections to conductivity is achieved when both disorder and interaction are taken into account. These results clearly demonstrate that it is crucial to include electron electron interaction for a comprehensive understanding of diffusive transport in topological insulators.

cond-mat.mes-hall↗