arXiv subjects

Xue-Jing Zhang

Publications and source records attributed to Xue-Jing Zhang.

8 recordsLinked to original sources

arXiv2024

Origin of the transitions inversion in rare-earth vanadates

The surprising inversion of the orbital- and magnetic-order transition temperatures in the RVO3 series with increasing the rare-earth radius makes the series unique among orbitally-ordered materials. Here, augmenting dynamical mean-field theory with a decomposition of the order parameter into irreducible tensors, we show that this anomalous behavior emerges from an unusual hierarchy of interactions. First, increasing the rare-earth radius, orbital physics comes to be controlled by xz-xz quadrupolar super-exchange rather than by lattice distortion. Next, for antiferromagnetic spin order, orbital super-exchange terms with different spin rank compete, so that the dipolar spin-spin interaction dominates. Eventually, G-type magnetic order (anti-ferro in all directions) can appear already above the orbital ordering transition, and C-type order (anti-ferro in the ab plane) right around it. The strict constraints we found explain why the inversion is rare, giving at the same time criteria to look for similar behavior in other materials.

cond-mat.str-el↗

arXiv2022

LaVO$_3$: a true Kugel-Khomskii system

We show that the $t_{2g}^2$ perovskite LaVO$_3$, in its orthorhombic phase, is a rare case of a system hosting an orbital-ordering Kugel-Khomskii phase transition, rather than being controlled by the Coulomb-enhanced crystal-field splitting. We find that, as a consequence of this, the magnetic transition is close to (and even above) the super-exchange driven orbital-ordering transition, whereas typically magnetism arises at much lower temperatures than orbital ordering. Our results support the experimental scenario of orbital-ordering and G-type spin correlations just above the monoclinic-to-orthorhombic structural change. To explore the effects of crystal-field splitting and filling, we compare to YVO$_3$ and $t_{2g}^1$ titanates. In all these materials the crystal-field is sufficiently large to suppress the Kugel-Khomskii phase transition.

cond-mat.str-el↗

arXiv2020

Giant Rashba spin splitting in strained KTaO3 ultrathin films for circular photogalvanic currents

Strong Rashba effects at surfaces and interfaces have attracted great attention for basic scientific exploration and practical applications. Here, the first-principles investigation shows that giant and tunable Rashba effects can be achieved in KTaO$_3$ (KTO) ultrathin films by applying biaxial stress. When increasing the in-plane compressive strain nearly to -5\%, the Rashba spin splitting energy reaches $E_{R}=140$ meV, approximately corresponding to the Rashba coupling constant $α_{R}=1.3$ eV Å. We investigate its strain-dependent crystal structures, energy bands, and related properties, and thereby elucidate the mechanism for the giant Rashba effects. Furthermore, we show that giant Rashba spin splitting can be kept in the presence of SrTiO$_3$ capping layer and/or Si substrate, and strong circular photogalvanic effect can be achieved to generate spin-polarized currents in the KTO thin films or related heterostructures, which are promising for future spintronic and optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2018

Strain-driven sign interchange of surface two-dimensional electron and hole gases in KTaO3 thin film

Since the discovery of two-dimensional (2D) electron gas in LaAlO3/SrTiO3 interface, 2D carrier gases in perovskite oxides have attracted great attention because they can host many important phenomena and may produce novel functional devices. Here, we show that there is one pair of surface 2D electron and hole gases in KTaO3 thin film and they can be tuned by applying biaxial stress. For increasing compressive in-plane strain, the 2D carrier concentrations decrease down to zero, and then a new pair of surface 2D electron and hole gases are formed and the carrier signs are interchanged. Our analysis indicates that this carrier sign interchange happens because the increasing compressive strain reverses the slope of monolayer-resolved electrostatic potential along the [001] direction. Furthermore, we also present strain-dependent carrier concentrations and effective masses and their thickness dependence, and show that the surface 2D carrier gases and their strain-driven sign interchange can persist even in the presence of overlayers and epitaxial substrates. These phenomena should be useful to design novel functional devices.

cond-mat.mtrl-sci↗

arXiv2017

Mechanically-controllable strong 2D ferroelectricity and anisotropic optical properties of flexible BiN monolayer

Structural, electronic, ferroelectric, and optical properties of two-dimensional (2D) BiN monolayer material with phosphorene-like structure are studied in terms of the density functional theory and modern Berry phase ferroelectric method. Both phonon spectra and molecular dynamics simulations indicate that the BiN monolayer is a room-temperature stable 2D ferroelectric with polarization as large as 580 pC/m. Further studies show that the polarization in the BiN monolayer can be easily switched from [100] to [010] direction over the bridging saddle phase by applying a tensile [010] stress of 2.54 N/m or compressive [100] stress of -1.18 N/m. This phase transition makes its lattice constants vary in a large range compared to other non-ferroelectric 2D materials. Moreover, through applying uniaxial tensile stress parallel to the polarization, one can fix the polarization and change the semiconductor energy gap from direct to indirect one. The optical properties feature a very strong anisotropy in reflectivity below the photon energy of 4 eV. All these significant ferroelectric, electronic, and optical properties make us believe that the 2D BiN monolayer can be used to make stretchable electronic devices and optical applications.

cond-mat.mtrl-sci↗

arXiv2017

Strain-controlled Insulator-Metal Transition in YTiO3/SrTiO3 Superlattices: A First-Principles Study

The structural, magnetic, and electronic properties of (STO)$_4$/(YTO)$_2$ superlattice consisting of Mott insulator YTiO$_3$ (YTO) and band insulator SrTiO$_3$ (STO) under strain are investigated by the density-functional-theory plus \emph{U} method. It is found that an insulator-metal transition occurs when a compressive strain of 0.2\% is applied. The structural analyses reveal that the presence of metallic state in such superlattices accompanies structural phase transition with restoring of inversion symmetry. Further study shows that this strain-induced structural transition makes the $d$ energy level of the interfacial Ti atoms of the YTO layer move upward due to the decreasing of the TiO$_{6}$ octahedral volume and induces the electron reconstruction in the whole superlattice systems. In addition, when the on-site interaction $U$ is changed from 5 to 4 eV, a similar insulator-metal transition also occurs in such superlattices due to the weakened electron correlation. These findings can improve our understanding of the insulator-metal transitions in such oxide superlattices.

cond-mat.mes-hall↗

arXiv2016

Ferroelectricity-induced asymmetrical two-dimensional electron gas in superlattices consisteing of insulating GdTiO3 and ferroelectric BaTiO3

Two-dimensional electron gas due to semiconductor interfaces can have high mobility and exhibits superconductivity, magnetism, and other exotic properties that are unexpected in constituent bulk materials. We study crystal structures, electronic states, and magnetism of short-period (BTO)$_m$/(GTO)$_2$ ($m$=2 and 4) superlattices consisting of ferroelectric BaTiO$_3$ (BTO) and ferrimagnetic insulating polar GdTiO$_3$ (GTO) by first principles calculations. Our investigation shows that the middle Ti-O monolayer in the GTO layer becomes metallic because the ferroelectricity in the insulating BTO layer induces an inhomogeneous electric field against the polarity-produced electric field in the GTO layer and thus differentially changes the d energy levels of the three Ti-O monolayers related with the GTO layer. Through avoiding electron reconstruction, the ferroelectric polarization also makes the electronic states and magnetism of two interfacial Ti-O monolayers become substantially different from those in the GTO/SrTiO$_3$ superlattices without ferroelectricity. Such superlattices are interesting for potential spintronics applications because of their unique asymmetrical two-dimensional electron-gas properties and possible useful spin-orbit effects.

cond-mat.mtrl-sci↗

arXiv2016

Two-Dimensional Wide-Band-Gap II-V Semiconductors with a Dilated Graphene-like Structure

Since the advent of graphene, two-dimensional (2D) materials become very attractive and there is growing interest to explore new 2D beyond graphene. Here, through density functional theory (DFT) calculations, we predict 2D wide-band-gap II-V semiconductor materials of M$_3$X$_2$ (M=Zn, Cd and X=N, P, As) with a dilated graphene-like honeycomb structure. The structure features that the group-V X atoms form two X-atomic planes symmetrically astride the centering group-IIB M atomic plane. The 2D Zn$_3$N$_2$, Zn$_3$P$_2$, and Zn$_3$As$_2$ are shown to have direct band gaps of 2.87, 3.81, and 3.55 eV, respectively, and the 2D Cd$_3$N$_2$, Cd$_3$P$_2$, and Cd$_3$As$_2$ exhibit indirect band gaps of 2.74, 3.51, and 3.29 eV, respectively. Each of the six 2D materials is shown to have effective carrier (either hole or electron) masses down to $0.03\sim 0.05$ $m_0$. The structural stability and feasibility of experimental realization of these 2D materials has been shown in terms of DFT phonon spectra and total energy comparison with related existing bulk materials. On the experimental side, there already are many similar two-coordinate structures of Zn and other transition metals in various organic materials, which can be considered to support our DFT prediction. Therefore, these 2D semiconductors can enrich the family of 2D electronic materials and may have promising potential for achieving novel transistors and optoelectronic devices.

cond-mat.mes-hall↗