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Xuedong Hu

Publications and source records attributed to Xuedong Hu.

At least 19 recordsLinked to original sources

CONCORD: Asynchronous Sparse Aggregation for Device-Cloud RAG under Document Isolation

Retrieval-augmented generation (RAG) has emerged as a pivotal technique for improving language models by incorporating external knowledge at inference time. As device-cloud collaborative inference makes it feasible to deploy small language models on edge devices, a new setting arises in which private documents remain on the device and public knowledge resides in the cloud. Privacy and policy constraints often forbid raw document exchange, creating a document-isolated dual-end RAG setting. However, existing methods rely on frequent remote synchronization and dense evidence transfer, limiting throughput under realistic latency and bandwidth conditions. To address this issue, we propose CONCORD, an asynchronous sparse aggregation framework for dual-end RAG under document isolation. CONCORD treats the cloud as an asynchronously arriving evidence source rather than a continuously synchronized co-generator. Specifically, we introduce waiting debt control to decide whether each decoding step should continue waiting for remote participation based on the observed return of waiting. We also design a certificate-guided minimal supplementation mechanism that requests only the remote evidence needed to determine the current greedy decision. Steps that consult the cloud preserve the same greedy token as dense dual-end aggregation, while the remaining steps commit locally without remote evidence. Experiments on Natural Questions and WikiText-2 show that CONCORD improves end-to-end throughput over baselines by $1.66\times$ and $2.15\times$, respectively, while reducing per-token communication by over two orders of magnitude and maintaining comparable answer quality and perplexity.

cs.AI

Co-optimization of spin coherence and valley splitting in Si/SiGe heterostructures

Single electron spins can be used to encode and process information in semiconductor quantum devices. Progress has been hindered by materials challenges, such as the small energy splitting between low-lying valley states and hyperfine coupling to nuclear spins. Here we use density functional theory to optimize the valley splitting and spin dephasing time in realistic Si/SiGe heterostructures. Reductions in the Si quantum well width generally increase the valley splitting. However, in narrow quantum wells, a larger fraction of the electronic wavefunction resides in the SiGe buffer layers, which increases the hyperfine coupling with spinful $^{73}$Ge. Our work shows that Si/SiGe heterostructures with 3~--~4~nm wide quantum wells and $^{73}$Ge and $^{29}$Si concentrations of 50 ppm should support average valley splittings $E_{v}$~$>$~500~$\mu$eV and spin dephasing times $T_2^*$ exceeding 15~$\mu$s assuming an effective quantum dot area of 700 nm$^2$. In addition, sharper Si/SiGe interfaces in general result in larger valley splittings and longer spin dephasing times.

cond-mat.mtrl-sci

Two-electron spectrum of a silicon quantum dot

The energy spectrum and wave functions of electrons in a single silicon quantum dot provide valuable insights into the capabilities and limitations of such a system in quantum information processing. Here we investigate the low-lying singlet and triplet configurations and spectra in a two-electron silicon quantum dot. To build toward a comprehensive understanding, we first examine the competition between Coulomb interaction and electron kinetic and confinement energy in the absence of valley-orbit coupling, as well as consequences of valley blockade in the presence of an ideal smooth interface. For realistic interfaces the variations in the magnitude and phase of valley-orbit coupling lead to inter-valley leakage, particularly when orbital splittings approach the valley splitting. In our study we particularly focus on the impact on the compositions of low-lying singlets and triplets. We find that for experimentally relevant parameter regimes the ground singlet and triplet states usually contain multiple configurations with significant weights as a result of a complicated competition among valley-orbit coupling, confinement potential, and Coulomb interaction. We further analyze the effects of an out-of-plane magnetic field on these the two-electron spectra. Our findings could have important implications for spin qubits in Si quantum dot in various contexts, such as qubit encoding and spin measurement.

cond-mat.mes-hall

Magnon squeezing in the quantum regime

Squeezed states, crucial for quantum metrology and emerging quantum technologies, have been demonstrated in various platforms, but quantum squeezing of magnons in macroscopic spin systems remains elusive. Here we report the experimental observation of quantum-level magnon squeezing in a millimeter-scale yttrium iron garnet (YIG) sphere. By engineering a strong dispersive magnon-superconducting qubit coupling via a microwave cavity, we implement a significant self-Kerr nonlinearity to generate squeezed magnon states with their mean magnon number less than one. Harnessing a magnon-assisted Raman process, we perform Wigner tomography, revealing quadrature variances of $\sim\!0.8$ ($\sim\!1.0$~dB squeezing) relative to the vacuum. These results lay the groundwork for quantum nonlinear magnonics and promise potential applications in quantum metrology.

quant-ph

Hole spin splitting in a Ge quantum dot with finite barriers

We study the low-energy spectrum of a single hole confined in a planar Ge quantum dot (QD) within the effective-mass formalism. The QD is sandwiched between two GeSi barriers of finite potential height grown along the [001] direction. To treat this finite barrier problem, we adopt an independent-band approach in dealing with boundary conditions. The effects of different system parameters are investigated, including the width of the out-of-plane confining well, the size of the dot, and silicon concentration in the confining layers. The more accurate finite-barrier model results in the non-negligible dependence of the anisotropic $g$-factor on the choice of boundary conditions and on the silicon concentration in the barrier. Furthermore, while the ideal model of a planar dot with a square-well heterostructure already has an intrinsic spin-orbit coupling, realistic effects arising from the experimental setup may give rise to additional contributions. We investigate the impact from the top-gate electric field and the residual tensile strain on the qubit states. The results indicate that these effects are important contributions to the total spin-orbit coupling which enables fast electric control.

cond-mat.mes-hall

Effect of disorder and strain on the operation of planar Ge hole spin qubits

Germanium quantum dots in strained $\text{Ge}/\text{Si}_{1-x}\text{Ge}_{x}$ heterostructures exhibit fast and coherent hole qubit control in experiments. In this work, we theoretically and numerically address the effects of random alloy disorder and gate-induced strain on the operation of planar Ge hole spin qubits. Electrical operation of hole quantum dot spin qubits is enabled by the strong Rashba spin-orbit coupling (SOC) originating from the intrinsic SOC in the Ge valence band as well as from the structural inversion asymmetry inherent in the underlying 2D hole gas. We use the atomistic valence force field (VFF) method to compute the strain due to random alloy disorder, and thermal expansion models in COMSOL Multiphysics to obtain the strain from a realistic gate-stack of planar hole quantum dot confinement. Recently, spin-orbit coupling terms $\propto k$ have been shown to be induced by strain inhomogeneity. Our hybrid approach to realistic device modeling suggests that strain inhomogeneity due to both random alloy disorder and gate-induced strain make a strong contribution to the linear-$k$ Dresselhaus spin-orbit coupling, which eventually dominates hole spin EDSR; and there exist specific in-plane orientations of the global magnetic field $\mathbf{B}$ and the microwave drive $\mathbf{\tilde{E}}_{\text{ac}}$ for maximum EDSR Rabi frequency of the hole spin qubit. The current model including strain inhomogeneity accurately predicts the EDSR Rabi frequency to be $\!\sim\!100$ MHz for typical electric and magnetic fields in experiments, which represents at least an order of magnitude improvement in accuracy over phenomenological models assuming uniform uniaxial strain. State-of-the-art atomistic tight binding calculations via nano-electronic modeling (NEMO3D) are in agreement with the $\mathbf{k}{\cdot}\mathbf{p}$ description.

cond-mat.mes-hall

Super-Poissonian Squeezed Light in the Deep Strong Regime of the Quantum Rabi Model

By analytically solving the quantum Rabi model, we investigate the photonic properties of its ground eigenstate. In particular, we find that in the deep strong coupling regime, where the coupling strength $g$ exceeds the mode frequency $\omega$, the photonic state is effectively squeezed in one of its quadratures. The squeezing reaches its maximum at the curve corresponding to the quantum phase transition of the quantum Rabi system, and decreases rapidly on both sides of the phase transition. Notably, for $g/\omega\approx 3$, which is experimentally testable in existing trapped-ion platforms, the achievable squeezing parameter can reach approximately $r\approx 0.8$. Intriguingly, the photonic state is squeezed while its number distribution follows a super-Poissonian distribution, with the largest deviation from Poissonian behavior occurring at the phase transition between the normal and superradiant phases. In other words, the ground state of the quantum Rabi model contains super-Poissonian quantum squeezed photons.

quant-ph

Dephasing of planar Ge hole spin qubits due to 1/$\textit{f}$ charge noise

Hole spin qubits in Ge, investigated for all-electrical spin manipulation because of its large spin-orbit coupling, are exposed to charge noise leading to decoherence. Here we construct a model of $1/f$ noise from individual fluctuators and determine the dephasing time $T_2^*$ as a function of qubit properties. $T_2^*$ decreases with increasing magnetic field and is an order of magnitude longer for out-of-plane than for in-plane fields for the same Zeeman energy. $T_2^*$ shows little variation as a function of the top gate field and is a complex function of the dot radius. Our results should help experiments to enhance coherence in hole qubit architectures.

cond-mat.mes-hall

A diverse set of two-qubit gates for spin qubits in semiconductor quantum dots

To realize large-scale quantum information processes, an ideal scheme for two-qubit operations should enable diverse operations with given hardware and physical interaction. However, for spin qubits in semiconductor quantum dots, the common two-qubit operations, including CPhase gates, SWAP gates, and CROT gates, are realized with distinct parameter regions and control waveforms, posing challenges for their simultaneous implementation. Here, taking advantage of the inherent Heisenberg interaction between spin qubits, we propose and verify a fast composite two-qubit gate scheme to extend the available two-qubit gate types as well as reduce the requirements for device properties. Apart from the formerly proposed CPhase (controlled-phase) gates and SWAP gates, theoretical results indicate that the iSWAP-family gate and Fermionic simulation (fSim) gate set are additionally available for spin qubits. Meanwhile, our gate scheme limits the parameter requirements of all essential two-qubit gates to a common J~{\Delta}E_Z region, facilitate the simultaneous realization of them. Furthermore, we present the preliminary experimental demonstration of the composite gate scheme, observing excellent match between the measured and simulated results. With this versatile composite gate scheme, broad-spectrum two-qubit operations allow us to efficiently utilize the hardware and the underlying physics resources, helping accelerate and broaden the scope of the upcoming noise intermediate-scale quantum (NISQ) computing.

cond-mat.mes-hall

Fast and high-fidelity dispersive readout of a spin qubit via squeezing and resonator nonlinearity

Fast and high-fidelity qubit measurement is crucial for achieving quantum error correction, a fundamental element in the development of universal quantum computing. For electron spin qubits, fast readout stands out as a major obstacle in the pursuit of error correction. In this work, we explore the dispersive measurement of an individual spin in a semiconductor double quantum dot coupled to a nonlinear microwave resonator. By utilizing displaced squeezed vacuum states, we achieve rapid and high-fidelity readout for semiconductor spin qubits. Our findings reveal that introducing modest squeezing and mild nonlinearity can significantly improve both the signal-to-noise ratio (SNR) and the fidelity of qubit-state readout. By properly marching the phases of squeezing, the nonlinear strength, and the local oscillator, the optimal readout time can be reduced to the sub-microsecond range. With current technology parameters ($κ\approx 2χ_s$, $χ_s\approx 2π\times 0.15 \:\mbox{MHz}$), utilizing a displaced squeezed vacuum state with $30$ photons and a modest squeezing parameter $r\approx 0.6$, along with a nonlinear microwave resonator charactered by a strength of $λ\approx -1.2 χ_s$, a readout fidelity of $98\%$ can be attained within a readout time of around $0.6\:μ\mbox{s}$. Intriguing, by using a positive nonlinear strength of $λ\approx 1.2χ_s$, it is possible to achieve an SNR of approximately $6$ and a readout fidelity of $99.99\%$ at a slightly later time, around $0.9\:μ\mbox{s}$, while maintaining all other parameters at the same settings.

cond-mat.mes-hall

Sub-microsecond high-fidelity dispersive readout of a spin qubit with squeezed photons

Fast and high-fidelity qubit measurement is essential for realizing quantum error correction, which is in turn a key ingredient to universal quantum computing. For electron spin qubits, fast readout is one of the significant road blocks toward error correction. Here we examine the dispersive readout of a single spin in a semiconductor double quantum dot coupled to a microwave resonator. We show that using displaced squeezed vacuum states for the probing photons can improve the qubit readout fidelity and speed. Under condition of proper phase matching, we find that a moderate, and only moderate, squeezing can enhance both the signal-to-noise ratio and the fidelity of the qubit-state readout, and the optimal readout time can be shortened to the sub-microsecond range with above $99\%$ fidelity. These enhancements are achieved at low probing microwave intensity, ensuring non-demolition qubit measurement.

quant-ph

A SWAP Gate for Spin Qubits in Silicon

With one- and two-qubit gate fidelities approaching the fault-tolerance threshold for spin qubits in silicon, how to scale up the architecture and make large arrays of spin qubits become the more pressing challenges. In a scaled-up structure, qubit-to-qubit connectivity has crucial impact on gate counts of quantum error correction and general quantum algorithms. In our toolbox of quantum gates for spin qubits, SWAP gate is quite versatile: it can help solve the connectivity problem by realizing both short- and long-range spin state transfer, and act as a basic two-qubit gate, which can reduce quantum circuit depth when combined with other two-qubit gates. However, for spin qubits in silicon quantum dots, high fidelity SWAP gates have not been demonstrated due to the requirements of large circuit bandwidth and a highly adjustable ratio between the strength of the exchange coupling J and the Zeeman energy difference Delta E_z. Here we demonstrate a fast SWAP gate with a duration of ~25 ns based on quantum dots in isotopically enriched silicon, with a highly adjustable ratio between J and Delta E_z, for over two orders of magnitude in our device. We are also able to calibrate the single-qubit local phases during the SWAP gate by incorporating single-qubit gates in our circuit. By independently reading out the qubits, we probe the anti-correlations between the two spins, estimate the operation fidelity and analyze the dominant error sources for our SWAP gate. These results pave the way for high fidelity SWAP gates, and processes based on them, such as quantum communication on chip and quantum simulation by engineering the Heisenberg Hamiltonian in silicon.

cond-mat.mes-hall

Full tunability and quantum coherent dynamics of a driven multilevel system

Tunability of an artificial quantum system is crucial to its capability to process quantum information. However, tunability usually poses significant demand on the design and fabrication of a device. In this work, we demonstrate that Floquet engineering based on longitudinal driving provides distinct possibilities in enhancing the tunability of a quantum system without needing additional resources. In particular, we study a multilevel model based on gate-defined double quantum dots, where coherent interference occurs when the system is driven longitudinally. We develop an effective model to describe the driven dynamics of this multilevel system, and show that it is highly tunable via the driving field. We then illustrate the versatility and rich physics of a driven multilevel system by exploring phenomena such as driving modulation of resonances, adiabatic state transfer, and dark state. In the context of qubit control, we propose noise-resistant quantum gates based on adiabatic passage. The theoretical consideration we present here is rather general, and is in principle valid for other multilevel quantum systems.

cond-mat.mes-hall

Quantum Interference and Coherent Population Trapping in a Double Quantum Dot

Quantum interference is a natural consequence of wave-particle duality in quantum mechanics, and is widely observed at the atomic scale. One interesting manifestation of quantum interference is coherent population trapping (CPT), first proposed in three-level driven atomic systems and observed in quantum optical experiments. Here, we demonstrate CPT in a gate-defined semiconductor double quantum dot (DQD), with some unique twists as compared to the atomic systems. Specifically, we observe CPT in both driven and non-driven situations. We further show that CPT in a driven DQD could be used to generate adiabatic state transfer. Moreover, our experiment reveals a non-trivial modulation to the CPT caused by the longitudinal driving field, yielding an odd-even effect and a tunable CPT.

cond-mat.mes-hall

Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot

Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here we experimentally demonstrate a tunable SOI in a double quantum dot in a Germanium (Ge) hut wire (HW), which could help enable fast all-electric spin manipulations while suppressing unwanted decoherence. Specifically, we measure the transport spectra in the Pauli spin blockade regime in the double quantum dot device.By adjusting the interdot tunnel coupling, we obtain an electric field tuned spin-orbit length lso = 2.0 - 48.9 nm. This tunability of the SOI could pave the way toward the realization of high-fidelity qubits in Ge HW systems.

cond-mat.mes-hall

Optimisation of electrically-driven multi-donor quantum dot qubits

Multi-donor quantum dots have been at the forefront of recent progress in Si-based quantum computation. Among them, $2P:1P$ qubits have a built-in dipole moment, enabling all-electrical spin operation via hyperfine mediated electron dipole spin resonance (EDSR). The development of all-electrical multi-donor dot qubits requires a full understanding of their EDSR and coherence properties, incorporating multi-valley nature of their ground state. Here, by introducing a variational effective mass wave-function, we examine the impact of qubit geometry and nearby charge defects on the electrical operation and coherence of $2P:1P$ qubits. We report four outcomes: (i) The difference in the hyperfine interaction between the $2P$ and $1P$ sites enables fast EDSR, with $T_π\sim 10-50$ ns and a Rabi ratio $ (T_1/T_π) \sim 10^6$. We analyse qubits with the $2P:1P$ axis aligned along the [100], [110] and [111] crystal axes, finding that the fastest EDSR time $T_π$ occurs when the $2P:1P$ axis is $\parallel$[111], while the best Rabi ratio occurs when it is $\parallel$ [100]. This difference is attributed to the difference in the wave function overlap between $2P$ and $1P$ for different geometries. In contrast, the choice of $2P$ axis has no visible impact on qubit operation. (ii) Sensitivity to random telegraph noise due to nearby charge defects depends strongly on the location of the nearby defects with respect to the qubit. For certain orientations of defects random telegraph noise has an appreciable effect both on detuning and $2P-1P$ tunneling, with the latter inducing gate errors. (iii) The qubit is robust against $1/f$ noise provided it is operated away from the charge anticrossing. (iv) Entanglement via exchange is several orders of magnitude faster than dipole-dipole coupling. These findings pave the way towards fast, low-power, coherent and scalable donor dot-based quantum computing.

cond-mat.mes-hall

Entanglement generation in a quantum network with finite quantum memory lifetime

We simulate entanglement sharing between two end-nodes of a quantum network using SeQUeNCe, an open-source simulation package for quantum networks. Our focus is on the rate of entanglement generation between the end-nodes with many repeaters with a finite quantum memory lifetime. Our findings demonstrate that the performance of quantum connection depends highly on the entanglement management protocol scheduling entanglement generation and swapping, resulting in the final end-to-end entanglement. Numerical and analytical simulations show limits of connection performance for a given number of repeaters involved, memory lifetimes for a given distance between the end nodes, and an entanglement management protocol.

quant-ph

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with rapid, all-electrical coherent control. Here we report ultrafast single-spin manipulation in a hole-based double quantum dot in a germanium hut wire (GHW). Mediated by the strong SOI, a Rabi frequency exceeding 540 MHz is observed at a magnetic field of 100 mT, setting a record for ultrafast spin qubit control in semiconductor systems. We demonstrate that the strong SOI of heavy holes (HHs) in our GHW, characterized by a very short spin-orbit length of 1.5 nm, enables the rapid gate operations we accomplish. Our results demonstrate the potential of ultrafast coherent control of hole spin qubits to meet the requirement of DiVincenzo's criteria for a scalable quantum information processor.

cond-mat.mes-hall