arXiv subjects

Xuedong Hu

Publications and source records attributed to Xuedong Hu.

At least 55 records · Page 3Linked to original sources

arXiv2018

Coherent transfer of electron spin correlations assisted by dephasing noise

Quantum coherence of superposed states, especially of entangled states, is indispensable for many quantum technologies. However, it is vulnerable to environmental noises, posing a fundamental challenge in solid-state systems including spin qubits. Here we show a scheme of entanglement engineering where pure dephasing assists the generation of quantum entanglement at distant sites in a chain of electron spins confined in semiconductor quantum dots. One party of an entangled spin pair, prepared at a single site, is transferred to the next site and then adiabatically swapped with a third spin using a transition across a multi-level avoided crossing. This process is accelerated by the noise-induced dephasing through a variant of the quantum Zeno effect, without sacrificing the coherence of the entangled state. Our finding brings insight into the spin dynamics in open quantum systems coupled to noisy environments, opening an avenue to quantum state manipulation utilizing decoherence effects.

cond-mat.mes-hall↗

arXiv2018

Spin-orbit coupling and electric-dipole spin resonance in a nanowire double quantum dot

We study the electric-dipole transitions for a single electron in a double quantum dot located in a semiconductor nanowire. Enabled by spin-orbit coupling (SOC), electric-dipole spin resonance (EDSR) for such an electron can be generated via two mechanisms: the SOC-induced intradot pseudospin states mixing and the interdot spin-flipped tunneling. The EDSR frequency and strength are determined by these mechanisms together. For both mechanisms the electric-dipole transition rates are strongly dependent on the external magnetic field. Their competition can be revealed by increasing the magnetic field and/or the interdot distance for the double dot. To clarify whether the strong SOC significantly impact the electron state coherence, we also calculate relaxations from excited levels via phonon emission. We show that spin-flip relaxations can be effectively suppressed by the phonon bottleneck effect even at relatively low magnetic fields because of the very large $g$-factor of strong SOC materials such as InSb.

cond-mat.mes-hall↗

arXiv2017

Entanglement control and magic angles for acceptor qubits in Si

Full electrical control of quantum bits could enable fast, low-power, scalable quantum computation. Although electric dipoles are highly attractive to couple spin qubits electrically over long distances, mechanisms identified to control two-qubit couplings do not permit single-qubit operations while two-qubit couplings are off. Here we identify a mechanism to modulate electrical coupling of spin qubits that overcomes this drawback for hole spin qubits in acceptors,that is based on the electrical tuning of the direction of the spin-dependent electric dipole by a gate. In this way, inter-qubit coupling can be turned off electrically by tuning to a "magic angle" of vanishing electric dipole-dipole interactions, while retaining the ability to manipulate the individual qubits. This effect stems from the interplay of the $\rm T_d$ symmetry of the acceptor state in the Si lattice with the magnetic field orientation, and the spin-3/2 characteristic of hole systems. Magnetic field direction also allows to greatly suppress spin relaxation by phonons that limit single qubit performance, while retaining sweet spots where the qubits are insensitive to charge noise. Our findings can be directly applied to state-of-the-art acceptor based architectures, for which we propose suitable protocols to practically achieve full electrical tunability of entanglement and the realization of a decoherence-free subspace.

cond-mat.mes-hall↗

arXiv2017

Toward high-fidelity coherent electron spin transport in a GaAs double quantum dot

In this paper, we investigate how to achieve high-fidelity electron spin transport in a GaAs double quantum dot. Our study examines spin transport from multiple perspectives. We first study how a double dot potential may affect/accelerate spin relaxation. We calculate spin relaxation rate in a wide range of experimental parameters and focus on the occurrence of spin hot spots. A safe parameter regime is identified in order to avoid these spin hot spots. We also study the non-adiabatic transitions in the Landau-Zener process of sweeping the interdot detuning, and propose a scheme to take advantage of possible Landau-Zener-Stükelburg interference to achieve high-fidelity spin transport at a higher speed. Finally, we calculate the double-dot correction on the effective $g$-factor for the tunneling electron, and estimate the resulting phase error between different spin states. Our results should provide a useful guidance for future experiments on coherent electron spin transport.

cond-mat.mes-hall↗

arXiv2017

Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor

We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra agree with a model of strongly coupled two-spin states in the presence of a spin-orbit-induced anti-crossing. Detailed spectroscopy at the anti-crossing shows a suppressed spin resonance signal due to spin-orbit-induced quantum state mixing. This suppression is also observed for multi-photon spin resonances. Our experimental observations agree with theoretical calculations.

cond-mat.mes-hall↗

arXiv2017

A tunable hybrid qubit in a triple quantum dot

We experimentally demonstrate quantum coherent dynamics of a triple-dot-based multi-electron hybrid qubit. Pulsed experiments show that this system can be conveniently initialized, controlled, and measured electrically, and has good coherence time as compared to gate time. Furthermore, the current multi-electron hybrid qubit has an operation frequency that is tunable in a wide range, from 2 to about 15 GHz. We provide qualitative understandings of the experimental observations by mapping it onto a three-electron system, and compare it with the double dot hybrid qubit and the all-exchange triple-dot qubit.

cond-mat.mes-hall↗

arXiv2016

Spin blockade and coherent dynamics of high-spin states in a three-electron double quantum dot

Asymmetry in a three-electron double quantum dot (DQD) allows spin blockade, when spin-3/2 (quadruplet) states and spin-1/2 (doublet) states have different charge configurations. We have observed this DQD spin blockade near the (1,2)-(2,1) charge transition using a pulsed-gate technique and a charge sensor. We then use this spin blockade to detect Landau-Zener-Stückelberg (LZS) interference and coherent oscillations between the spin quadruplet and doublet states. Such studies add to our understandings of coherence and control properties of three-spin states in a double dot, which in turn would benefit the explorations into various qubit encoding schemes in semiconductor nanostructures.

cond-mat.mes-hall↗

arXiv2016

Tunable Hybrid Qubit in a GaAs Double Quantum Dot

We experimentally demonstrate a tunable hybrid qubit in a five-electron GaAs double quantum dot. The qubit is encoded in the (1,4) charge regime of the double dot and can be manipulated completely electrically. More importantly, dot anharmonicity leads to quasiparallel energy levels and a new anticrossing, which help preserve quantum coherence of the qubit and yield a useful working point. We have performed Larmor precession and Ramsey fringe experiments near the new working point and find that the qubit decoherence time is significantly improved over a charge qubit. This work shows a new way to encode a semiconductor qubit that is controllable and coherent.

cond-mat.mes-hall↗

arXiv2015

An exactly solvable model for a strongly spin-orbit-coupled nanowire quantum dot

In the presence of spin-orbit coupling, quantum models for semiconductor materials are generally not exactly solvable. As a result, understanding of the strong spin-orbit coupling effects in these systems remains poor. Here we develop an analytical method to solve the one-dimensional hard-wall quantum dot problem in the presence of strong spin-orbit coupling and magnetic field, which allows us to obtain exact eigenenergies and eigenstates of a single electron. With the help of the exact solution, we demonstrate some unique effects from the strong spin-orbit coupling in a semiconductor quantum dot, in particular the anisotropy of the electron g-factor and its tunability.

cond-mat.mes-hall↗

arXiv2015

Singularity of the time-energy uncertainty in adiabatic perturbation and cycloids on a Bloch sphere

The adiabatic perturbation is shown to be singular from the exact solution of a spin-1/2 particle in a uniformly rotating magnetic field. Due to a non-adiabatic effect, its quantum trajectory on a Bloch sphere is a cycloid traced by a circle rolling along an adiabatic path. As the magnetic field rotates more and more slowly, the time-energy uncertainty, proportional to the distance of the quantum trajectory, calculated by the exact solution is entirely different from the one obtained by the adiabatic path traced by the instantaneous state. However, the non-adiabatic Aharonov-Anandan geometric phase, measured by the area enclosed by the exact path, approaches smoothly the adiabatic Berry phase, proportional to the area enclosed by the adiabatic path. The singular limit of the time-energy uncertainty and the regular limit of the geometric phase are associated with the arc length and arc area of the cycloid on a Bloch sphere, respectively. Prolate and curtate cycloids are also traced by different initial states outside and inside of the rolling circle, respectively. The axis trajectory of the rolling circle, parallel to the adiabatic path, is shown to be an example of transitionless driving. The non-adiabatic resonance is visualized by the number of complete cycloid arcs.

quant-ph↗

arXiv2015

Characterizing gate operations near the sweet spot of an exchange-only qubit

Optimal working points or "sweet spots" have arisen as an important tool for mitigating charge noise in quantum dot logical spin qubits. The exchange-only qubit provides an ideal system for studying this effect because $Z$ rotations are performed directly at the sweet spot, while $X$ rotations are not. Here for the first time we quantify the ability of the sweet spot to mitigate charge noise by treating $X$ and $Z$ rotations on an equal footing. Specifically, we optimize $X$ rotations and determine an upper bound on their fidelity. We find that sweet spots offer a fidelity improvement factor of at least 20 for typical GaAs devices, and more for Si devices.

cond-mat.mes-hall↗

arXiv2015

Scaling Behavior in the Decoherence of Decoupled Multi-spin System

We study the scaling of decoherence of decoupled electron spin qubits due to hyperfine interaction. For a superposed state consisting of product states from a single Zeeman manifold, both $T_2^*(n)$ and $T_2(n)$ are scale-free with respect to $n$ and the number of basis states, $m$. For a superposed state made up of states from different Zeeman manifolds, both $T_2(n)$ and $T_2^*(n)$ are roughly inversely proportional to $\sqrt{n}$. Our results can be extended to other decoherence mechanisms, including in the presence of dynamical decoupling, which allow meaningful discussions on the scalability of spin-based coherent solid state quantum technology.

quant-ph↗

arXiv2015

Phonon mediated spin relaxation in a moving quantum dot: Doppler shift, Cherenkov radiation, and spin relaxation boom

We study relaxation of a moving spin qubit caused by phonon noise. As we vary the speed of the qubit, we observe several interesting features in spin relaxation and the associated phonon emission, induced by Doppler effect. In particular, in the supersonic regime, the phonons emitted by the relaxing qubit is concentrated along certain directions, similar to the shock waves produced in classical Cherenkov effect. As the speed of the moving qubit increases from the subsonic regime to the supersonic regime, the qubit experiences a peak in the spin relaxation rate near the speed of sound, which we term a spin relaxation boom in analogy to the classical sonic boom. We also find that the moving spin qubit may have a lower relaxation rate than a static qubit, which hints at the possibility of coherence-preserving transportation for a spin qubit. While the physics we have studied here has strong classical analogies, we do find that quantum confinement for the spin qubit plays an important role in all the phenomena we observe. Specifically, it produces a correction on the Cherenkov angle, and removes the divergence in relaxation rate at the sonic barrier. It is our hope that our results would encourage further research into approaches for transferring and preserving quantum information in spin qubit architectures.

cond-mat.mes-hall↗

arXiv2014

Spin relaxation in a Si quantum dot due to spin-valley mixing

We study the relaxation of an electron spin qubit in a Si quantum dot due to electrical noise. In particular, we clarify how the presence of conduction-band valleys influences spin relaxation. In single-valley semiconductor quantum dots, spin relaxation is through the mixing of spin and envelope orbital states via spin-orbit interaction. In Si, the relaxation could also be through the mixing of spin and valley states. We find that the additional spin relaxation channel, via spin-valley mixing and electrical noise, is indeed important for an electron spin in a Si quantum dot. By considering both spin-valley and intravalley spin-orbit mixings and Johnson noise in a Si device, we find that the spin relaxation rate peaks at the hot spot, where the Zeeman splitting matches the valley splitting. Furthermore, because of a weaker field dependence, the spin relaxation rate due to Johnson noise could dominate over phonon noise at low magnetic fields, which fits well with recent experiments.

cond-mat.mes-hall↗

arXiv2014

Decoherence of an exchange qubit by hyperfine interaction

We study three-electron-spin decoherence in a semiconductor triple quantum dot with a linear geometry. The three electron spins are coupled by exchange interactions J_{12} and J_{23}, and we clarify inhomogeneous and homogeneous dephasing dynamics for a logical qubit encoded in the (S=1/2,S_{z} =1/2) subspace. We first justify that qubit leakage via the fluctuating Overhauser field can be effectively suppressed by sufficiently large Zeeman and exchange splittings. For J_{12}=J_{23} and the case of J_{12} and J_{23} being different, we construct an effective pure dephasing Hamiltonian with the Zeeman splitting much larger than the exchange splitting. Both effective Hamiltonians have the same order of magnitude as that for a single-spin qubit, and the relevant dephasing time scales are of the same order as those for a single spin. We provide estimates of the dynamics of three-spin free induction decay, the decay of a Hahn spin echo, and the decay of echoes from a CPMG pulse sequence for GaAs quantum dots.

cond-mat.mes-hall↗

arXiv2014

Decoherence of a Driven Qubit

We study decoherence of a field-driven qubit in the presence of environmental noises. For a general qubit, we find that driving, whether on-resonance or off-resonance, alters the qubit decoherence rates (including dissipation and pure dephasing), allowing both blue and red sideband contributions from the reservoir. Depending on the noise spectral density, driving field detuning and driving field phase shift, the qubit decoherence rates could be either accelerated or reduced. We apply our general theory to the system of an electron spin qubit that is confined in a quantum dot and driven by an in-plane electric field. We analyze how spin relaxation induced by the electrical noise due to electron-phonon interaction varies as a function of driving frequency, driving magnitude, driving field phase shift and spin-orbit coupling strengths.

quant-ph↗

arXiv2014

Spin Relaxation due to Charge Noise

We study decoherence of an electron spin qubit in a quantum dot due to charge noise. We find that at the lowest order, the pure dephasing channel is suppressed for both $1/f$ charge noise and Johnson noise, so that charge noise leads to a pure relaxation channel of decoherence. Because of the weaker magnetic field dependence, the spin relaxation rate due to charge noise could dominate over phonon noise at low magnetic fields in a gate-defined GaAs or Si quantum dot or a InAs self-assembled quantum dot. Furthermore, in a large InAs self-assembled quantum dot, the spin relaxation rate due to phonon noise could be suppressed in high magnetic field, and the spin relaxation due to charge noise could dominate in both low and high magnetic field. Numerically, in a 1 Tesla field, the spin relaxation time due to typical charge noise is about $100$ s in Si, $0.1$ s in GaAs for a gate-defined quantum dot with a $1$ meV confinement, and $10$ $μ$s in InAs self-assembled quantum dot with a $4$ meV confinement.

cond-mat.mes-hall↗

arXiv2013

Hyperfine interaction induced dephasing of coupled spin qubits in semiconductor double quantum dots

We investigate theoretically the hyperfine-induced dephasing of two-electron-spin states in a double quantum dot with a finite singlet-triplet splitting J. In particular, we derive an effective pure dephasing Hamiltonian, which is valid when the hyperfine-induced mixing is suppressed due to the relatively large J and the external magnetic field. Using both a quantum theory based on resummation of ring diagrams and semiclassical methods, we identify the dominant dephasing processes in regimes defined by values of the external magnetic field, the singlet-triplet splitting, and inhomogeneity in the total effective magnetic field. We address both free induction and Hahn echo decay of superposition of singlet and unpolarized triplet states (both cases are relevant for singlet-triplet qubits realized in double quantum dots). We also study hyperfine-induced exchange gate errors for two single-spin qubits. Results for III-V semiconductors as well as silicon-based quantum dots are presented.

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