arXiv subjects

Xuehui Liang

Publications and source records attributed to Xuehui Liang.

5 recordsLinked to original sources

arXiv2026

Dressed-state relaxation in coupled qubits as a source of two-qubit gate errors

Understanding error mechanisms in two-qubit gate operations is essential for building high-fidelity quantum processors. While prior studies predominantly treat dephasing noise as either Markovian or predominantly low-frequency, realistic qubit environments exhibit structured, frequency-dependent spectra. Here we demonstrate that noise at frequencies matching the dressed-state energy splitting--set by the inter-qubit coupling strength g--induces a distinct relaxation channel that degrades gate performance. Through combined theoretical analysis and experimental verification on superconducting qubits with engineered noise spectra, we show that two-qubit gate errors scale predictably with the noise power spectral density at frequency 2g, extending the concept of $T_{1\rho}$ relaxation to interacting systems. This frequency-selective relaxation mechanism, universal across platforms, enriches our understanding of decoherence pathways during gate operations. The same mechanism sets coherence limits for dual-rail or singlet-triplet encodings.

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arXiv2023

Error per single-qubit gate below $10^{-4}$ in a superconducting qubit

Implementing arbitrary single-qubit gates with near perfect fidelity is among the most fundamental requirements in gate-based quantum information processing. In this work, we fabric a transmon qubit with long coherence times and demonstrate single-qubit gates with the average gate error below $10^{-4}$, i.e. $(7.42\pm0.04)\times10^{-5}$ by randomized benchmarking (RB). To understand the error sources, we experimentally obtain an error budget, consisting of the decoherence errors lower bounded by $(4.62\pm0.04)\times10^{-5}$ and the leakage rate per gate of $(1.16\pm0.04)\times10^{-5}$. Moreover, we reconstruct the process matrices for the single-qubit gates by the gate set tomography (GST), with which we simulate RB sequences and obtain single-qubit fedlities consistent with experimental results. We also observe non-Markovian behavior in the experiment of long-sequence GST, which may provide guidance for further calibration. The demonstration extends the upper limit that the average fidelity of single-qubit gates can reach in a transmon-qubit system, and thus can be an essential step towards practical and reliable quantum computation in the near future.

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arXiv2023

Mapping Topology-Localization Phase Diagram with Quasiperiodic Disorder Using a Programmable Superconducting Simulator

We explore topology-localization phase diagram by simulating one-dimensional Su-Schrieffer-Heeger (SSH) model with quasiperiodic disorder using a programmable superconducting simulator. We experimentally map out and identify various trivial and topological phases with extended, critical, and localized bulk states. We find that with increasing disorder strength, some extended states can be first replaced by localized states and then by critical states before the system finally becomes fully localized. The critical states exhibit typical features such as multifractality and self-similarity, which lead to surprisingly rich phases with different types of mobility edges and scaling behaviors on the phase boundaries. Our results shed new light on the investigation of the topological and localization phenomena in condensed-matter physics.

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arXiv2021

Vacuum-gap transmon qubits realized using flip-chip technology

Significant progress has been made in building large-scale superconducting quantum processors based on flip-chip technology. In this work, we use the flip-chip technology to realize a modified transmon qubit, donated as the "flipmon", whose large shunt capacitor is replaced by a vacuum-gap parallel plate capacitor. To further reduce the qubit footprint, we place one of the qubit pads and a single Josephson junction on the bottom chip and the other pad on the top chip which is galvanically connected with the single Josephson junction through an indium bump. The electric field participation ratio can arrive at nearly 53% in air when the vacuum-gap is about 5 microns, and thus potentially leading to a lower dielectric loss. The coherence times of the flipmons are measured in the range of 30-60 microseconds, which are comparable with that of traditional transmons with similar fabrication processes. The electric field simulation indicates that the metal-air interface's participation ratio increases significantly and may dominate the qubit's decoherence. This suggests that more careful surface treatment needs to be considered. No evidence shows that the indium bumps inside the flipmons cause significant decoherence. With well-designed geometry and good surface treatment, the coherence of the flipmons can be further improved.

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arXiv2021

Transmon qubit with relaxation time exceeding 0.5 milliseconds

By using the dry etching process of tantalum (Ta) film, we had obtained transmon qubit with the best lifetime (T1) 503 us, suggesting that the dry etching process can be adopted in the following multi-qubit fabrication with Ta film. We also compared the relaxation and coherence times of transmons made with different materials (Ta, Nb and Al) with the same design and fabrication processes of Josephson junction, we found that samples prepared with Ta film had the best performance, followed by those with Al film and Nb film. We inferred that the reason for this difference was due to the different loss of oxide materials located at the metal-air interface.

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