arXiv subjects

Xuekui Xi

Publications and source records attributed to Xuekui Xi.

22 records · Page 2Linked to original sources

arXiv2016

NMR Evidence for the Topologically Nontrivial Nature in a Family of Half-Heusler Compounds

Spin-orbit coupling (SOC) is expected to partly determine the topologically nontrivial electronic structure of heavy half-Heusler ternary compounds. However, to date, attempts to experimentally observe either the strength of SOC or how it modifies the bulk band structure have been unsuccessful. By using bulk-sensitive nuclear magnetic resonance (NMR) spectroscopy combined with first-principles calculations, we reveal that 209Bi NMR isotropic shifts scale with relativity in terms of the strength of SOC and average atomic numbers, indicating strong relativistic effects on NMR parameters. According to first-principles calculations, we further claim that nuclear magnetic shieldings from relativistic p1/2 states and paramagnetic contributions from low-lying unoccupied p3/2 states are both sensitive to the details of band structures tuned by relativity, which explains why the hidden relativistic effects on band structure can be revealed by 209Bi NMR isotropic shifts in topologically nontrivial half-Heusler compounds. Used in complement to surface-sensitive methods, such as angle resolved photon electron spectroscopy and scanning tunneling spectroscopy, NMR can provide valuable information on bulk electronic states.

cond-mat.str-el↗

arXiv2015

High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

cond-mat.mtrl-sci↗

arXiv2015

Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb

High quality half-Heusler single crystals of LuPtSb have been synthesized by a Pb flux method. The temperature dependent resistivity and Hall effects indicate that the LuPtSb crystal is a p-type gapless semiconductor showing a transition from semiconducting to metallic conducting at 150 K. Moreover, a weakly temperature-dependent positive magnetoresistance (MR) as large as 109 % and high carrier mobility up to 2950 cm2/Vs are experimentally observed at temperatures below 150 K. The low-field MR data shows evidence for weak antilocalization (WAL) effect at temperatures even up to 150 K. Analysis of the temperature and angle dependent magnetoconductance manifests that the WAL effect originates from the bulk contribution owing to the strong spin-orbital coupling.

cond-mat.str-el↗

arXiv2014

NMR evidence for enhanced orbital diamagnetism in topologically nontrivial half-Heusler semimetals

209Bi nuclear magnetic resonance (NMR) spectroscopy was employed to probe potential spin-orbit effects on orbital diamagnetism in YPtBi and YPdBi crystals. The observed opposite sign and temperature dependent magnitude of 209Bi NMR shifts of both crystals reveal experimental signatures of enhanced orbital diamagnetism induced by spin-orbit interactions. This investigation indicates that NMR isotropic shifts might be beneficial in search of interesting spin-electronic phases among a vast number of topological nontrivial half-Heusler semimetals.

cond-mat.str-el↗