arXiv subjects

Xuepeng Qiu

Publications and source records attributed to Xuepeng Qiu.

At least 19 recordsLinked to original sources

arXiv2026

Symplectic connection third-order Hall effect in a room-temperature ferromagnet

Third-order nonlinear Hall effects (THE) have recently attracted considerable experimental interest as powerful probes for quantum geometric properties in emergent quantum materials, encompassing quadrupole moments of quantum metric and Berry curvature. Here, we report a fundamentally new THE in room-temperature van der Waals ferromagnet Fe3GaTe2 from second-order Berry connection polarizability, which manifests a higher-order characterization of band geometry called symplectic connection. Our observations show that the third-order transverse response in Fe3GaTe2 is odd to magnetization, vanishes above the Curie temperature and remains independent of driving current directions. Scaling law analysis combined with first-principles calculations establishes this response as the symplectic-connection-induced THE. This discovery opens the door to probing high-order quantum geometric properties beyond Berry curvature and quantum metric through nonlinear transport, unveiling the potential of exploring nonlinear Hall phenomena in broad classes of magnets without breaking inversion symmetry. Moreover, the room-temperature manipulation of THE holds promises for device applications based on harnessing the quantum-geometric connection structure.

cond-mat.mes-hall↗

arXiv2025

Coexistence of unconventional spin-orbit torque and in-plane Hall effect in a single ferromagnetic layer

The symmetry of a material fundamentally governs its spin transport properties. While unconventional spin transport phenomena have been predominantly explored in low-symmetry systems (e.g., $C_{1v}$ symmetry), high-symmetry crystals--which constitute the majority of industry-compatible materials--are generally expected to exhibit only conventional spin-transport behavior. Here, we report the coexistence of two unconventional spin transport effects, the crystal spin-orbit torque (CSOT) and the crystal in-plane Hall effect (CIHE), in a CoPt single ferromagnetic layer with $C_{3v}$ symmetry. Leveraging the CSOT, we achieve nearly 100% field-free perpendicular magnetization switching in a 6 nm CoPt layer at room temperature. Simultaneously, the CIHE observed in this material exhibits nearly identical dependencies on both current angle and growth temperature as the CSOT. Symmetry analysis confirms that both effects share a common physical origin. Our work not only establishes CoPt as a high-performance spin-orbit material, but also demonstrates that unconventional spin transport can be realized in high-symmetry systems, thereby opening a broad pathway for their application in practical spintronics.

cond-mat.mes-hall↗

arXiv2024

Unveiling the nonrelativistic spin current polarization in an altermagnet

Spin current plays a central role in spintronics for driving exotic spin-dependent phenomena and high-performance device applications. Recently, a magnetic spin Hall effect has been discovered in spin-split antiferromagnets including noncollinear antiferromagnets and altermagnets, allowing the efficient generation of unconventional spin currents even in the absence of spin-orbit coupling. However, although such nonrelativistic spin currents are proposed to have a magnetic origin, the direct connection between the Neel vector and the spin current polarization is still missing. Here, using the altermagnetic RuO2 as a representative example, we unveil the spin current polarization by disentangling the conventional and magnetic spin Hall effects using a technique we developed based on the spin Hall magnetoresistance measurement. The results suggest that the nonrelativistic spin current hosts a polarization very close to the Neel vector. Our work offers unambiguous evidence of the magnetic origin of the nonrelativistic spin current in altermagnetic RuO2, and paves a straightforward route to understand the unconventional spin currents that are crucial in spintronics.

cond-mat.mes-hall↗

arXiv2024

Topological surface state dominated nonlinear transverse response and microwave rectification at room temperature

Nonlinear Hall effect (NLHE) offers a novel means of uncovering symmetry and topological properties in quantum materials, holding promise for exotic (opto)electronic applications such as microwave rectification and THz detection. The BCD-independent NLHE could exhibit a robust response even at room temperature, which is highly desirable for practical applications. However, in materials with bulk inversion symmetry, the coexistence of bulk and surface conducting channels often leads to a suppressed NLHE and complex thickness-dependent behavior. Here, we report the observation of room-temperature nonlinear transverse response in 3D topological insulator Bi2Te3 thin films, whose electrical transport properties are dominated by topological surface state (TSS). By varying the thickness of Bi2Te3 epitaxial films from 7 nm to 50 nm, we found that the nonlinear transverse response increases with thickness from 7 nm to 25 nm and remains almost constant above 25 nm. This is consistent with the thickness-dependent basic transport properties, including conductance, carrier density, and mobility, indicating a pure and robust TSS-dominated linear and nonlinear transport in thick (>25 nm) Bi2Te3 films. The weaker nonlinear transverse response in Bi2Te3 below 25 nm was attributed to Te deficiency and poorer crystallinity. By utilizing the TSS-dominated electrical second harmonic generation, we successfully achieved the microwave rectification from 0.01 to 16.6 GHz in 30 nm and bulk Bi2Te3. Our work demonstrated the room temperature nonlinear transverse response in a paradigm topological insulator, addressing the tunability of the topological second harmonic response by thickness engineering.

cond-mat.mtrl-sci↗

arXiv2024

Mimicking synaptic plasticity with wedged Pt/Co/Pt spin-orbit torque device

We fabricated a wedge-shaped Pt/Co/Pt device with perpendicular magnetic anisotropy and manifested that the Co magnetization can be solely switched by spin-orbit torque without any magnetic field. Similar to the synaptic weight, we observed that the state of Co magnetization (presented by the anomalous Hall resistance RH) of the wedged Pt/Co/Pt device can be tuned continuously with a large number of nonvolatile levels by applied pulse currents. Furthermore, we studied the synaptic plasticity of the wedged Pt/Co/Pt device, including the excitatory postsynaptic potentials or inhibitory postsynaptic potentials and spiking-time-dependent plasticity. The work elucidates the promise of the wedged Pt/Co/Pt device as a candidate for a new type of artificial synaptic device that is induced by a spin current and paves a substantial pathway toward the combination of spintronics and synaptic devices.

physics.app-ph↗

arXiv2024

Antisymmetric Planar Hall Effect in Rutile Oxide Films Induced by the Lorentz Force

The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect (APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO2 and IrO2 single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.

cond-mat.mes-hall↗

arXiv2024

Orbital torque switching in perpendicularly magnetized materials

The orbital Hall effect in light materials has attracted considerable attention for developing novel orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the switching of the perpendicularly magnetized materials through the orbital Hall material (OHM), i.e., Zirconium (Zr). The orbital torque efficiency of approximately 0.78 is achieved in the Zr OHM with the perpendicularly magnetized [Co/Pt]3 sample, which significantly surpasses that of the perpendicularly magnetized CoFeB/Gd/CoFeB sample (approximately 0.04). Such notable difference is attributed to the different spin-orbit correlation strength between the [Co/Pt]3 sample and the CoFeB/Gd/CoFeB sample, which has been confirmed through the theoretical calculations. Furthermore, the full magnetization switching of the [Co/Pt]3 sample with a switching current density of approximately 2.6x106 A/cm2 has been realized through Zr, which even outperforms that of the W spin Hall material. Our finding provides a guideline to understand orbital torque efficiency and paves the way to develop energy-efficient orbitronic devices.

cond-mat.mtrl-sci↗

arXiv2022

Anomalous anisotropy of spin current in a cubic spin source with noncollinear antiferromagnetism

Cubic materials host high crystal symmetry and hence are not expected to support anisotropy in transport phenomena. In contrast to this common expectation, here we report an anomalous anisotropy of spin current can emerge in the (001) film of Mn${_3}$Pt, a noncollinear antiferromagnetic spin source with face-centered cubic structure. Such spin current anisotropy originates from the intertwined time reversal-odd ($T$-odd) and time reversal-even ($T$-even) spin Hall effects. Based on symmetry analyses and experimental characterizations of the current-induced spin torques in Mn${_3}$Pt-based heterostructures, we find that the spin current generated by Mn${_3}$Pt (001) exhibits exotic dependences on the current direction for all the spin components, deviating from that in conventional cubic systems. We also demonstrate that such an anisotropic spin current can be used to realize low-power spintronic applications such as the efficient field-free switching of the perpendicular magnetizations.

cond-mat.mtrl-sci↗

arXiv2022

Nonreciprocal transport in a bilayer of MnBi2Te4 and Pt

MnBi2Te4 (MBT) is the first intrinsic magnetic topological insulator with the interaction of spin-momentum locked surface electrons and intrinsic magnetism, and it exhibits novel magnetic and topological phenomena. Recent studies suggested that the interaction of electrons and magnetism can be affected by the Mn-doped Bi2Te3 phase at the surface due to inevitable structural defects. Here we report an observation of nonreciprocal transport, i.e. current-direction-dependent resistance, in a bilayer composed of antiferromagnetic MBT and nonmagnetic Pt. The emergence of the nonreciprocal response below the Néel temperature confirms a correlation between nonreciprocity and intrinsic magnetism in the surface state of MBT. The angular dependence of the nonreciprocal transport indicates that nonreciprocal response originates from the asymmetry scattering of electrons at the surface of MBT mediated by magnon. Our work provides an insight into nonreciprocity arising from the correlation between magnetism and Dirac surface electrons in intrinsic magnetic topological insulators.

cond-mat.mes-hall↗

arXiv2021

Efficient field-free perpendicular magnetization switching by a magnetic spin Hall effect

Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular magnetic anisotropy that are demanded by the high-density magnetic storage and memory devices. Here, we demonstrate that this limitation can be overcome by exploiting a magnetic spin Hall effect in noncollinear antiferromagnets, such as Mn3Sn. The magnetic group symmetry of Mn3Sn allows generation of the out-of-plane spin current carrying spin polarization induced by an in-plane charge current. This spin current drives an out-of-plane anti-damping torque providing deterministic switching of perpendicular magnetization of an adjacent Ni/Co multilayer. Compared to the conventional spin-orbit torque devices, the observed switching does not need any external magnetic field and requires much lower current density. Our results demonstrate great prospects of exploiting the magnetic spin Hall effect in noncollinear antiferromagnets for low-power spintronics.

cond-mat.mtrl-sci↗

arXiv2019

Angular characterization of spin-orbit torque and thermoelectric effects

Arising from the interplay between charge, spin and orbital of electrons, spin-orbit torque (SOT) has attracted immense interest in the past decade. Despite vast progress, the existing quantification methods of SOT still have their respective restrictions on the magnetic anisotropy, the entanglement between SOT effective fields, and the artifacts from the thermal gradient and the planar Hall effect, etc. Thus, accurately characterizing SOT across diverse samples remains as a critical need. In this work, with the aim of removing the afore-mentioned restrictions, thus enabling the universal SOT quantification, we report the characterization of the sign and amplitude of SOT by angular measurements. We first validate the applicability of our angular characterization in a perpendicularly magnetized Pt/Co-Ni heterostructure by showing excellent agreements to the results of conventional quantification methods. Remarkably, the thermoelectric effects, i.e., the anomalous Nernst effect (ANE) arising from the temperature gradient can be self-consistently disentangled and quantified from the field dependence of the angular characterization. The superiority of this angular characterization has been further demonstrated in a Cu/CoTb/Cu sample with large ANE but negligible SOT, and in a Pt/Co-Ni sample with weak perpendicular magnetic anisotropy (PMA), for which the conventional quantification methods are not applicable and even yield fatal error. By providing a comprehensive and versatile way to characterize SOT and thermoelectric effects in diverse heterostructures, our results pave the important foundation for the spin-orbitronic study as well as the interdisciplinary research of thermal spintronic.

cond-mat.mtrl-sci↗

arXiv2018

Current-enhanced broadband THz emission from spintronic devices

An ultra-broadband THz emitter covering a wide range of frequencies from 0.1 to 10 THz is highly desired for spectroscopy applications. So far, spintronic THz emitters have been proven as one class of efficient THz sources with a broadband spectrum while the performance in the lower frequency range (0.1 to 0.5 THz) limits its applications. In this work, we demonstrate a novel concept of a current-enhanced broad spectrum from spintronic THz emitters combined with semiconductor materials. We observe a 2-3 order enhancement of the THz signals in a lower THz frequency range (0.1 to 0.5 THz), in addition to a comparable performance at higher frequencies from this hybrid emitter. With a bias current, there is a photoconduction contribution from semiconductor materials, which can be constructively interfered with the THz signals generated from the magnetic heterostructures driven by the inverse spin Hall effect. Our findings push forward the utilization of metallic heterostructures-based THz emitters on the ultra-broadband THz emission spectroscopy.

physics.app-ph↗

arXiv2018

Long spin coherence length and bulk-like spin-orbit torque in ferrimagnetic multilayers

Ferromagnetic spintronics has been a main focus as it offers non-volatile memory and logic applications through current-induced spin-transfer torques. Enabling wider applications of such magnetic devices requires a lower switching current for a smaller cell while keeping the thermal stability of magnetic cells for non-volatility. As the cell size reduces, however, it becomes extremely difficult to meet this requirement with ferromagnets because spin-transfer torque for ferromagnets is a surface torque due to rapid spin dephasing, leading to the 1/ferromagnet-thickness dependence of the spin-torque efficiency. Requirement of a larger switching current for a thicker and thus more thermally stable ferromagnetic cell is the fundamental obstacle for high-density non-volatile applications with ferromagnets. Theories predicted that antiferromagnets have a long spin coherence length due to the staggered spin order on an atomic scale, thereby resolving the above fundamental limitation. Despite several spin-torque experiments on antiferromagnets and ferrimagnetic alloys, this prediction has remained unexplored. Here we report a long spin coherence length and associated bulk-like-torque characteristic in an antiferromagnetically coupled ferrimagnetic multilayer. We find that a transverse spin current can pass through > 10 nm-thick ferrimagnetic Co/Tb multilayers whereas it is entirely absorbed by 1 nm-thick ferromagnetic Co/Ni multilayer. We also find that the switching efficiency of Co/Tb multilayers partially reflects a bulk-like-torque characteristic as it increases with the ferrimagnet-thickness up to 8 nm and then decreases, in clear contrast to 1/thickness-dependence of Co/Ni multilayers. Our results on antiferromagnetically coupled systems will invigorate researches towards energy-efficient spintronic technologies.

cond-mat.mtrl-sci↗

arXiv2017

Oscillatory spin-orbit torque switching induced by field-like torques

Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching characteristics over time, therefore, it is limited to bipolar operation where a change in polarity of the applied current or field is required for bistable switching. The coherent rotation based oscillatory switching schemes cannot be applied to SOT because the SOT switching occurs through expansion of magnetic domains. Here, we experimentally achieve oscillatory switching in incoherent SOT process by controlling domain wall dynamics. We find that a large field-like component can dynamically influence the domain wall chirality which determines the direction of SOT switching. Consequently, under nanosecond current pulses, the magnetization switches alternatively between the two stable states. By utilizing this oscillatory switching behavior we demonstrate a unipolar deterministic SOT switching scheme by controlling the current pulse duration.

cond-mat.mtrl-sci↗

arXiv2017

Anomalous spin-orbit torque switching due to field-like torque-assisted domain wall reflection

Spin-orbit torques (SOT) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques so that the efficient SOT switching requires to understand combined effects of the two torque-components. Previous quasi-static measurements have reported an increased switching probability with the width of current pulses, as predicted with considering the damping-like torque only. Here we report a decreased switching probability at longer pulse-widths, based on time-resolved measurements. Micromagnetic analysis reveals that this anomalous SOT switching results from domain wall reflections at sample edges. The domain wall reflection is found to strongly depend on the field-like torque and its relative sign to the damping-like torque. Our result demonstrates a key role of the field-like torque in the deterministic SOT switching and notifies the importance of sign correlation of the two torque-components, which may shed light on the SOT switching mechanism.

cond-mat.mtrl-sci↗

arXiv2017

Experimental study of extrinsic spin Hall effect in CuPt alloy

We have experimentally studied the effects on the spin Hall angle due to systematic addition of Pt into the light metal Cu. We perform spin torque ferromagnetic resonance measurements on Py/CuPt bilayer and find that as the Pt concentration increases, the spin Hall angle of CuPt alloy increases. Moreover, only 28% Pt in CuPt alloy can give rise to a spin Hall angle close to that of Pt. We further extract the spin Hall resistivity of CuPt alloy for different Pt concentrations and find that the contribution of skew scattering is larger for lower Pt concentrations, while the side-jump contribution is larger for higher Pt concentrations. From technological perspective, since the CuPt alloy can sustain high processing temperatures and Cu is the most common metallization element in the Si platform, it would be easier to integrate the CuPt alloy based spintronic devices into existing Si fabrication technology.

cond-mat.mtrl-sci↗

arXiv2017

Anomalous current-induced spin torques in ferrimagnets near compensation

While current-induced spin-orbit torques (SOTs) have been extensively studied in ferromagnets and antiferromagnets, ferrimagnets have been less studied. Here we report the presence of enhanced spin-orbit torques resulting from negative exchange interaction in ferrimagnets. The effective field and switching efficiency increase substantially as CoGd approaches its compensation point, giving rise to 9 times larger spin-orbit torques compared to that of non-compensated one. The macrospin modelling results also support efficient spin-orbit torques in a ferrimagnet. Our results suggest that ferrimagnets near compensation can be a new route for spin-orbit torque applications due to their high thermal stability and easy current-induced switching assisted by negative exchange interaction.

cond-mat.mtrl-sci↗

arXiv2017

Continuous Tuning the Magnitude and Direction of Spin-Orbit Torque Using Bilayer Heavy Metals

Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random access memory (MRAM). The effective manipulation of SOT has thus become an important step towards these applications. Here, current induced spin-orbit effective fields and magnetization switching are investigated in Pt/Ta/CoFeB/MgO structures with bilayer heavy metals. With a fixed thickness (1 nm) of the Ta layer, the magnitude and sign of current induced spin-orbit effective fields can be continuously tuned by changing the Pt layer thickness, consistent with the current induced magnetization switching data. The ratio of longitudinal to transverse spin-orbit effective fields is found to be determined by the Ta/CoFeB interface and can be continuously tuned by changing the Pt layer thickness. The Dzyaloshinskii-Moriya interaction (DMI) is found to be weak and shows an insignificant variation with the Pt thickness. The results demonstrate an effective method to tune SOTs utilizing bilayer heavy metals without affecting the DMI, a desirable feature which will be useful for the design of SOT-based devices.

cond-mat.mtrl-sci↗