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Xueqing Li

Publications and source records attributed to Xueqing Li.

17 recordsLinked to original sources

DuoMorph: Synergistic Integration of FDM Printing and Pneumatic Actuation for Shape-Changing Interfaces

We introduce DuoMorph, a design and fabrication method that synergistically integrates Fused Deposition Modeling (FDM) printing and pneumatic actuation to create novel shape-changing interfaces. In DuoMorph, the printed structures and heat-sealed pneumatic elements are mutually designed to actuate and constrain each other, enabling functions that are difficult for either component to achieve in isolation. Moreover, the entire hybrid structure can be fabricated through a single, seamless process using only a standard FDM printer, including both heat-sealing and 3D and 4D printing. In this paper, we define a design space including four primitive categories that capture the fundamental ways in which printed and pneumatic components can interact. To support this process, we present a fabrication method and an accompanying design tool. Finally, we demonstrate the potential of DuoMorph through a series of example applications and performance demonstrations.

cs.HC

Bridging the Gap between Continuous and Informative Discrete Representations by Random Product Quantization

Self-supervised learning (SSL) has become a core technique in speech processing, but the high dimensionality of its representations makes discretization essential for improving efficiency. However, existing discretization methods still suffer from significant information loss, resulting in a notable performance gap compared to continuous representations. To overcome these limitations, we propose two quantization-based discretization methods: Product Quantization (PQ) and Random Product Quantization (RPQ). PQ partitions the original feature space into multiple subspaces and independently quantizes each sub-vector, producing a fused set of discrete units that retain diverse information from different subspaces, thereby mitigating the loss associated with single-cluster quantization. RPQ further enhances representation diversity by randomly sampling a fixed proportion of feature dimensions multiple times to construct sub-vectors, thereby better capturing the variability in the data distribution. Theoretical analysis shows that RPQ reduces the correlation coefficient rho (where 0 <= rho <= 1) between sub-quantizers. Its quantization error is lower-bounded by the product of rho and epsilon-kms, where epsilon-kms denotes the quantization error of a single K-means quantizer. Experimental results on a combined dataset built from LibriSpeech and ML-SUPERB show that PQ and RPQ outperform standard K-means discretization, achieving relative improvements of 21.8 percent and 20.0 percent in WER on LibriSpeech, and 24.1 percent and 19.6 percent in CER on ML-SUPERB, respectively. Moreover, their performance is competitive with, and in some cases even surpasses, that of continuous SSL representations.

eess.AS

Multilingual Speech Recognition Using Discrete Tokens with a Two-step Training Strategy

Pre-trained models, especially self-supervised learning (SSL) models, have demonstrated impressive results in automatic speech recognition (ASR) task. While most applications of SSL models focus on leveraging continuous representations as features for training downstream tasks, the utilization of discrete units has gained increasing attention in recent years owing to its lower storage requirements and broader range of applications. In multilingual ASR tasks, representations at different layers of the model contribute differently to various languages, complicating the unification of discrete unit modeling. In this paper, we propose a two-stage training strategy to improve the discrete token performance of pre-trained models and narrow the gap with continuous representation performance. We validate our method on the XLS-R model following the settings of Interspeech2024 Speech Processing Using Discrete Speech Unit Challenge. Our method demonstrates a significant improvement on the ML-SUPERB dataset, achieving a 44% relative reduction on CER for the XLS-R model. This surpasses the previous baseline set by the WavLM model, which achieves a 26% relative reduction on CER. Furthermore, our method achieves the first place among all the single-system results on the leaderboard.

eess.AS

AI-Gadget Kit: Integrating Swarm User Interfaces with LLM-driven Agents for Rich Tabletop Game Applications

While Swarm User Interfaces (SUIs) have succeeded in enriching tangible interaction experiences, their limitations in autonomous action planning have hindered the potential for personalized and dynamic interaction generation in tabletop games. Based on the AI-Gadget Kit we developed, this paper explores how to integrate LLM-driven agents within tabletop games to enable SUIs to execute complex interaction tasks. After defining the design space of this kit, we elucidate the method for designing agents that can extend the meta-actions of SUIs to complex motion planning. Furthermore, we introduce an add-on prompt method that simplifies the design process for four interaction behaviors and four interaction relationships in tabletop games. Lastly, we present several application scenarios that illustrate the potential of AI-Gadget Kit to construct personalized interaction in SUI tabletop games. We expect to use our work as a case study to inspire research on multi-agent-driven SUI for other scenarios with complex interaction tasks.

cs.HC

A 65nm 8b-Activation 8b-Weight SRAM-Based Charge-Domain Computing-in-Memory Macro Using A Fully-Parallel Analog Adder Network and A Single-ADC Interface

Performing data-intensive tasks in the von Neumann architecture is challenging to achieve both high performance and power efficiency due to the memory wall bottleneck. Computing-in-memory (CiM) is a promising mitigation approach by enabling parallel in-situ multiply-accumulate (MAC) operations within the memory with support from the peripheral interface and datapath. SRAM-based charge-domain CiM (CD-CiM) has shown its potential of enhanced power efficiency and computing accuracy. However, existing SRAM-based CD-CiM faces scaling challenges to meet the throughput requirement of high-performance multi-bit-quantization applications. This paper presents an SRAM-based high-throughput ReLU-optimized CD-CiM macro. It is capable of completing MAC and ReLU of two signed 8b vectors in one CiM cycle with only one A/D conversion. Along with non-linearity compensation for the analog computing and A/D conversion interfaces, this work achieves 51.2GOPS throughput and 10.3TOPS/W energy efficiency, while showing 88.6% accuracy in the CIFAR-10 dataset.

cs.AR

TL-nvSRAM-CIM: Ultra-High-Density Three-Level ReRAM-Assisted Computing-in-nvSRAM with DC-Power Free Restore and Ternary MAC Operations

Accommodating all the weights on-chip for large-scale NNs remains a great challenge for SRAM based computing-in-memory (SRAM-CIM) with limited on-chip capacity. Previous non-volatile SRAM-CIM (nvSRAM-CIM) addresses this issue by integrating high-density single-level ReRAMs on the top of high-efficiency SRAM-CIM for weight storage to eliminate the off-chip memory access. However, previous SL-nvSRAM-CIM suffers from poor scalability for an increased number of SL-ReRAMs and limited computing efficiency. To overcome these challenges, this work proposes an ultra-high-density three-level ReRAMs-assisted computing-in-nonvolatile-SRAM (TL-nvSRAM-CIM) scheme for large NN models. The clustered n-selector-n-ReRAM (cluster-nSnRs) is employed for reliable weight-restore with eliminated DC power. Furthermore, a ternary SRAM-CIM mechanism with differential computing scheme is proposed for energy-efficient ternary MAC operations while preserving high NN accuracy. The proposed TL-nvSRAM-CIM achieves 7.8x higher storage density, compared with the state-of-art works. Moreover, TL-nvSRAM-CIM shows up to 2.9x and 1.9x enhanced energy-efficiency, respectively, compared to the baseline designs of SRAM-CIM and ReRAM-CIM, respectively.

cs.AR

ASMCap: An Approximate String Matching Accelerator for Genome Sequence Analysis Based on Capacitive Content Addressable Memory

Genome sequence analysis is a powerful tool in medical and scientific research. Considering the inevitable sequencing errors and genetic variations, approximate string matching (ASM) has been adopted in practice for genome sequencing. However, with exponentially increasing bio-data, ASM hardware acceleration is facing severe challenges in improving the throughput and energy efficiency with the accuracy constraint. This paper presents ASMCap, an ASM acceleration approach for genome sequence analysis with hardware-algorithm co-optimization. At the circuit level, ASMCap adopts charge-domain computing based on the capacitive multi-level content addressable memories (ML-CAMs), and outperforms the state-of-the-art ML-CAM-based ASM accelerators EDAM with higher accuracy and energy efficiency. ASMCap also has misjudgment correction capability with two proposed hardware-friendly strategies, namely the Hamming-Distance Aid Correction (HDAC) for the substitution-dominant edits and the Threshold-Aware Sequence Rotation (TASR) for the consecutive indels. Evaluation results show that ASMCap can achieve an average of 1.2x (from 74.7% to 87.6%) and up to 1.8x (from 46.3% to 81.2%) higher F1 score (the key metric of accuracy), 1.4x speedup, and 10.8x energy efficiency improvement compared with EDAM. Compared with the other ASM accelerators, including ResMA based on the comparison matrix, and SaVI based on the seeding strategy, ASMCap achieves an average improvement of 174x and 61x speedup, and 8.7e3x and 943x higher energy efficiency, respectively.

cs.AR

Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors

Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role in enhancing the overall system performance and quality of service. Conventional volatile memories, including static random-access memory (SRAM) and embedded dynamic random-access memory (eDRAM) in the complementary metal-oxide-semiconductor technology, have high performance and good reliability. However, the inherent leakage in both SRAM and eDRAM hinders further improvement towards smaller feature sizes and higher energy efficiency. Although the emerging nonvolatile memories can eliminate the leakage efficiently, the penalties of lower speed and degraded reliability are significant. This article reveals a new opportunity towards leakage-free volatile static memory beyond the known paradigms of existing volatile and nonvolatile memories. By engineering a double-well energy landscape with the assistance of a clamping voltage bias, leakage-free and refresh-free state retention of volatile memory is achieved for the first time. This new memory is highlighted by both the ultra-low leakage of nonvolatile memories and the speed, energy, and reliability advantages of volatile memories. A proof-of-concept memory is demonstrated using in-house anti-ferroelectric field-effect transistors (AFeFETs), delivering an extrapolated endurance of about 1012 cycles, a retention time of over 10 years, and no subthreshold channel leakage current. Such a new concept of AFeFET-based memory enables an improved balance between density, power, and reliability beyond all existing memory solutions.

cs.ET

FAST: A Fully-Concurrent Access Technique to All SRAM Rows for Enhanced Speed and Energy Efficiency in Data-Intensive Applications

Compute-in-memory (CiM) is a promising approach to improving the computing speed and energy efficiency in dataintensive applications. Beyond existing CiM techniques of bitwise logic-in-memory operations and dot product operations, this paper extends the CiM paradigm with FAST, a new shift-based inmemory computation technique to handle high-concurrency operations on multiple rows in an SRAM. Such high-concurrency operations are widely seen in both conventional applications (e.g. the table update in a database), and emerging applications (e.g. the parallel weight update in neural network accelerators), in which low latency and low energy consumption are critical. The proposed shift-based CiM architecture is enabled by integrating the shifter function into each SRAM cell, and by creating a datapath that exploits the high-parallelism of shifting operations in multiple rows in the array. A 128-row 16-column shiftable SRAM in 65nm CMOS is designed to evaluate the proposed architecture. Postlayout SPICE simulations show average improvements of 4.4x energy efficiency and 96.0x speed over a conventional fully-digital memory-computing-separated scheme, when performing the 8-bit weight update task in a VGG-7 framework.

cs.AR

Ferroelectric FET-based strong physical unclonable function: a low-power, high-reliable and reconfigurable solution for Internet-of-Things security

Hardware security has been a key concern in modern information technologies. Especially, as the number of Internet-of-Things (IoT) devices grows rapidly, to protect the device security with low-cost security primitives becomes essential, among which Physical Unclonable Function (PUF) is a widely-used solution. In this paper, we propose the first FeFET-based strong PUF exploiting the cycle-to-cycle (C2C) variation of FeFETs as the entropy source. Based on the experimental measurements, the proposed PUF shows satisfying performance including high uniformity, uniqueness, reconfigurability and reliability. To resist machine-learning attack, XOR structure was introduced, and simulations show that our proposed PUF has similar resistance to existing attack models with traditional arbiter PUFs. Furthermore, our design is shown to be power-efficient, and highly robust to write voltage, temperature and device size, which makes it a competitive security solution for Internet-of-Things edge devices.

cs.ET

GRAPHIC: GatheR-And-Process in Highly parallel with In-SSD Compression Architecture in Very Large-Scale Graph

Graph convolutional network (GCN), an emerging algorithm for graph computing, has achieved promising performance in graphstructure tasks. To achieve acceleration for data-intensive and sparse graph computing, ASICs such as GCNAX have been proposed for efficient execution of aggregation and combination in GCN. GCNAX reducing 8x DRAM accesses compared with previous efforts. However, as graphs have reached terabytes in size, off-chip data movement from SSD to DRAM becomes a serious latency bottleneck. This paper proposes Compressive Graph Transmission (CGTrans), which performs the aggregation in SSD to dramatically relieves the transfer latency bottleneck due to SSD loading compared to CMOS-based graph accelerator ASICs. InSSD computing technique is required for CGTrans. Recently, Insider was proposed as a near-SSD processing system computing by integrating FPGA in SSD. However, the Insider still suffers low area efficiency, which will limit the performance of CGTrans. The recently proposed Fully Concurrent Access Technique (FAST) is utilized. FAST-GAS, as an in-SSD graph computing accelerator, is proposed to provide high-concurrent gather-andscatter operations to overcome the area efficiency problem. We proposed the GRAPHIC system containing CGTrans dataflow deployed on FAST-GAS. Experiments show CGTrans reduces SSD loading by a factor of 50x, while GRAPHIC achieves 3.6x, and 2.4x speedup on average over GCNAX and CGTrans on Insider, respectively.

cs.AR

ALL-MASK: A Reconfigurable Logic Locking Method for Multicore Architecture with Sequential-Instruction-Oriented Key

Intellectual property (IP) piracy has become a non-negligible problem as the integrated circuit (IC) production supply chain is becoming increasingly globalized and separated that enables attacks by potentially untrusted attackers. Logic locking is a widely adopted method to lock the circuit module with a key and prevent hackers from cracking it. The key is the critical aspect of logic locking, but the existing works have overlooked three possible challenges of the key: safety of key storage, easy key-attempt from interface and key-related overheads, bringing the further challenges of low error rate and small state space. In this work, the key is dynamically generated by utilizing the huge space of a CPU core, and the unlocking is performed implicitly through the interconnection inside the chip. A novel low-cost logic reconfigurable gate is together proposed with ferroelectric FET (FeFET) to mitigate the reverse engineering and removal attack. Compared to the common logic locking methods, our proposed approach is 19,945 times more time consuming to traverse all the possible combinations in only 9-bit-key condition. Furthermore, our technique let key length increases this complexity exponentially and ensure the logic obfuscation effect.

cs.AR

YOLoC: DeploY Large-Scale Neural Network by ROM-based Computing-in-Memory using ResiduaL Branch on a Chip

Computing-in-memory (CiM) is a promising technique to achieve high energy efficiency in data-intensive matrix-vector multiplication (MVM) by relieving the memory bottleneck. Unfortunately, due to the limited SRAM capacity, existing SRAM-based CiM needs to reload the weights from DRAM in large-scale networks. This undesired fact weakens the energy efficiency significantly. This work, for the first time, proposes the concept, design, and optimization of computing-in-ROM to achieve much higher on-chip memory capacity, and thus less DRAM access and lower energy consumption. Furthermore, to support different computing scenarios with varying weights, a weight fine-tune technique, namely Residual Branch (ReBranch), is also proposed. ReBranch combines ROM-CiM and assisting SRAM-CiM to ahieve high versatility. YOLoC, a ReBranch-assisted ROM-CiM framework for object detection is presented and evaluated. With the same area in 28nm CMOS, YOLoC for several datasets has shown significant energy efficiency improvement by 14.8x for YOLO (Darknet-19) and 4.8x for ResNet-18, with <8% latency overhead and almost no mean average precision (mAP) loss (-0.5% ~ +0.2%), compared with the fully SRAM-based CiM.

cs.AR

UGRec: Modeling Directed and Undirected Relations for Recommendation

Recommender systems, which merely leverage user-item interactions for user preference prediction (such as the collaborative filtering-based ones), often face dramatic performance degradation when the interactions of users or items are insufficient. In recent years, various types of side information have been explored to alleviate this problem. Among them, knowledge graph (KG) has attracted extensive research interests as it can encode users/items and their associated attributes in the graph structure to preserve the relation information. In contrast, less attention has been paid to the item-item co-occurrence information (i.e., \textit{co-view}), which contains rich item-item similarity information. It provides information from a perspective different from the user/item-attribute graph and is also valuable for the CF recommendation models. In this work, we make an effort to study the potential of integrating both types of side information (i.e., KG and item-item co-occurrence data) for recommendation. To achieve the goal, we propose a unified graph-based recommendation model (UGRec), which integrates the traditional directed relations in KG and the undirected item-item co-occurrence relations simultaneously. In particular, for a directed relation, we transform the head and tail entities into the corresponding relation space to model their relation; and for an undirected co-occurrence relation, we project head and tail entities into a unique hyperplane in the entity space to minimize their distance. In addition, a head-tail relation-aware attentive mechanism is designed for fine-grained relation modeling. Extensive experiments have been conducted on several publicly accessible datasets to evaluate the proposed model. Results show that our model outperforms several previous state-of-the-art methods and demonstrate the effectiveness of our UGRec model.

cs.IR

Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing with Ferroelectric FETs

Compute-in-memory (CiM) is a promising approach to alleviating the memory wall problem for domain-specific applications. Compared to current-domain CiM solutions, charge-domain CiM shows the opportunity for higher energy efficiency and resistance to device variations. However, the area occupation and standby leakage power of existing SRAMbased charge-domain CiM (CD-CiM) are high. This paper proposes the first concept and analysis of CD-CiM using nonvolatile memory (NVM) devices. The design implementation and performance evaluation are based on a proposed 2-transistor-1-capacitor (2T1C) CiM macro using ferroelectric field-effect-transistors (FeFETs), which is free from leakage power and much denser than the SRAM solution. With the supply voltage between 0.45V and 0.90V, operating frequency between 100MHz to 1.0GHz, binary neural network application simulations show over 47%, 60%, and 64% energy consumption reduction from existing SRAM-based CD-CiM, SRAM-based current-domain CiM, and RRAM-based current-domain CiM, respectively. For classifications in MNIST and CIFAR-10 data sets, the proposed FeFETbased CD-CiM achieves an accuracy over 95% and 80%, respectively.

cs.ET

Dynamic Ternary Content-Addressable Memory Is Indeed Promising: Design and Benchmarking Using Nanoelectromechanical Relays

Ternary content addressable memory (TCAM) has been a critical component in caches, routers, etc., in which density, speed, power efficiency, and reliability are the major design targets. There have been the conventional low-write-power but bulky SRAM-based TCAM design, and also denser but less reliable or higher-write-power TCAM designs using nonvolatile memory (NVM) devices. Meanwhile, some TCAM designs using dynamic memories have been also proposed. Although dynamic design TCAM is denser than CMOS SRAM TCAM and more reliable than NVM TCAM, the conventional row-by-row refresh operations land up with a bottleneck of interference with normal TCAM activities. Therefore, this paper proposes a custom low-power dynamic TCAM using nanoelectromechanical (NEM) relay devices utilizing one-shot refresh to solve the memory refresh problem. By harnessing the unique NEM relay characteristics with a proposed novel cell structure, the proposed TCAM occupies a small footprint of only 3 transistors (with two NEM relays integrated on the top through the back-end-of-line process), which significantly outperforms the density of 16-transistor SRAM-based TCAM. In addition, evaluations show that the proposed TCAM improves the write energy efficiency by 2.31x, 131x, and 13.5x over SRAM, RRAM, and FeFET TCAMs, respectively; The search energy-delay-product is improved by 12.7x, 1.30x, and 2.83x over SRAM, RRAM, and FeFET TCAMs, respectively.

cs.ET

High Area/Energy Efficiency RRAM CNN Accelerator with Kernel-Reordering Weight Mapping Scheme Based on Pattern Pruning

Resistive Random Access Memory (RRAM) is an emerging device for processing-in-memory (PIM) architecture to accelerate convolutional neural network (CNN). However, due to the highly coupled crossbar structure in the RRAM array, it is difficult to exploit the sparsity of the network in RRAM-based CNN accelerator. To optimize the weight mapping of sparse network in the RRAM array and achieve high area and energy efficiency, we propose a novel weight mapping scheme and corresponding RRAM-based CNN accelerator architecture based on pattern pruning and Operation Unit(OU) mechanism. Experimental results show that our work can achieve 4.16x-5.20x crossbar area efficiency, 1.98x-2.15x energy efficiency, and 1.15x-1.35x performance speedup in comparison with the traditional weight mapping method.

cs.AR