arXiv subjects

Xuetao Gan

Publications and source records attributed to Xuetao Gan.

At least 19 recordsLinked to original sources

arXiv2026

Spatiotemporal programming via asymmetric dielectric engineering for nonvolatile 2D optoelectronics

Ambipolar two dimensional (2D) semiconductors integrated with floating-gate architectures offer a promising platform for nonvolatile, reconfigurable electronics. However, the switching between p-n and n-p junction polarities has conventionally required complex multi-gate designs, hindering the scalability and integration density. Here, we demonstrate a spatiotemporal programming strategy using a dual-floating-gate architecture with a symmetry broken tunneling dielectric. An asymmetric dielectric stack creates distinct tunneling thresholds for two floating gates, enabling a single input gate to encode spatial doping profiles in the 2D channel via defined voltage pulse sequences. We achieve on demand, nonvolatile, and reversible switching between p-n and n-p configurations with excellent retention and endurance. The reconfigurable homojunction serves as a multifunctional platform for logic encoding, rectification, photodetection, and in sensor computing. This work establishes a design paradigm that replaces spatial input complexity with spatiotemporal programming, paving the way for high-density, multifunctional intelligent hardware.

cond-mat.mes-hall↗

arXiv2026

High-speed and high-gain graphene photovoltaic phototransistor gated by a van der Waals heterojunction

Two-dimensional (2D) material-based phototransistors offer a unique combination of optical sensing, signal amplification, and logic operation within a single device, yet fundamentally suffering from an inherent gain-speed trade-off. Here, we demonstrate a 2D photovoltaic phototransistor that overcomes this limitation using a MoS2/PtSe2 heterojunction to gate a graphene channel. The ultrafast photovoltaic effect in the heterojunction enables charge separation, yielding ultrahigh photoconductive gain (up to 10^8) in graphene channel via interfacial gating. Besides, the response time (below the instrumental resolution of 550 ns) is governed by carrier transit in graphene channel, enabling simultaneous high speed and high gain. Moreover, broadband photodetection from visible to near-infrared is enabled by the optical properties of the MoS2/PtSe2 heterojunction, with the detectivity exceeding 10^11 Jones. These results establish a new paradigm for high-performance 2D phototransistors by harnessing photovoltaic and photogating effects to overcome the classical gain-speed trade-off.

cond-mat.mtrl-sci↗

arXiv2026

Low-Energy, Octave-Spanning Supercontinuum Generation in Ta_2O_5 Waveguides: Towards Optical Coherence Metrology

Supercontinuum generation (SCG) on integrated photonic platforms is a pivotal technology for developing next-generation chip-scale systems for precision spectroscopy and metrology. While significant progress has been made with silicon (Si) and silicon nitride ($Si_3N_4$) platforms, they are often constrained by two-photon absorption (TPA) or moderate nonlinear coefficients, necessitating a trade-off between energy efficiency and bandwidth. Tantalum pentoxide ($Ta_2O_5$), possessing both high nonlinearity and a wide bandgap, emerges as a promising candidate; however, current implementations remain challenged by high pump energy consumption. Here, we report a low-loss $Ta_2O_5$ integrated waveguide fabricated via the Damascene process. It enables the generation of a two-octave-spanning spectrum with a low pulse energy of only 92.9 pJ (60 fs, 1550 nm). Notably, the corresponding peak power is a mere 1.36 kW, which is nearly an order of magnitude lower than that of state-of-the-art comparable broadband sources. Furthermore, at the maximum pump energy, our spectrum exhibits an ultrabroad coverage from 450 nm to 3400 nm, spanning nearly three octaves. Supported by numerical simulations, we analyze the dynamics of soliton fission. Furthermore, a Michelson interferometry system developed using this source exhibits superior performance, achieving not only micrometer-scale axial resolution but also a 6 dB sensitivity roll-off length of 3.1 mm. This exceptional roll-off performance, combined with a displacement measurement sensitivity of 346 nm, underscores the immense potential of the $Ta_2O_5$ platform for applications in biomedical imaging and precision metrology.

physics.optics↗

arXiv2026

On-Chip Erbium-Doped Tantalum Oxide Microring Hybrid Cavity Single-Mode Laser

We demonstrate a high-performance, single-mode Er:Ta2O5 microring laser monolithically integrated on a silicon platform via a customized Damascene process. The Er:Ta2O5 gain medium exhibits a low propagation loss of 0.73 dB/cm and a high intrinsic Q-factor of 5.03 x 105. By utilizing a hybrid cavity_consisting of a microring coupled to a U-shaped waveguide at two symmetric points_we exploit the Vernier effect to achieve robust longitudinal mode selection. Under a non-resonant 1480 nm pumping scheme, the laser yields a side_mode suppression ratio (SMSR) of 53.3 dB and a narrow linewidth of 9.5 pm. A slope efficiency of 2.76 % is achieved_the highest reported to date for Er:Ta2O5 lasers_with a lasing threshold of 3.3 mW. Furthermore, stable single-mode tuning is demonstrated across a temperature range of 18_68 celsius, consistently aligning with theoretical transfer matrix models. This work provides a scalable pathway for high-efficiency, tunable on-chip light sources, bridging the gap for monolithic active-passive integration on the tantalum oxide photonic platform.

physics.optics↗

arXiv2025

On-chip quadratically nonlinear photodetector

Involving deterministically nonlinear photoresponse in on-chip photodetector is intriguing to develop sophisticated functions in photonic integrated circuits, such as in-sensor computing and optoelectronic mixing, though the corresponding devices are still lack of sufficient investigation. Here, we demonstrate an on-chip quadratically nonlinear photodetector (QNPD) by configuring an InSe p-i-n homojunction on a silicon waveguide. Telecom-band light guiding in the waveguide couples with the InSe evanescently and is frequency up-converted into visible light via InSe's second-harmonic generation (SHG), which is subsequently absorbed by InSe and finally generates photocurrent under the built-in electric field of the p-i-n homojunction. Governed by these sequential processes, the on-chip QNPD presents a quadratic function between photocurrent and optical power. Thanks to the efficient SHG and well-established homojunction in InSe, the QNPD reaches a high normalized responsivity of 37.1 A/W2 and low dark current of 1 pA, representing greatly improved performances among reported nonlinear photodetectors. Benefiting from the extra SHG process, the on-chip QNPD intrinsically incorporates light-light interactions, enabling straightforwardly monitoring all-optically mixing signals electrically. As an example, an array of 16-pixel QNPDs was designed to implement a fully single-shot on-chip autocorrelator without requirement of bulky optics and external cameras, which precisely measures picosecond pulses with high sensitivity of 6.1*10-10 W2.

physics.optics↗

arXiv2025

Multifunctional Wideband Digital Metasurface for Secure Electromagnetic Manipulation in S-Band

Digital metasurfaces have attracted significant attention in recent years due to their ability to manipulate electromagnetic (EM) waves for secure sensing and communication. However, most reported metasurfaces operate at relatively high frequencies, primarily due to the constraints imposed by the physical scale of the dielectric substrate, thus limiting their full-wave system applications. In this work, a wideband digital reflective metasurface is presented for capable of dynamically controlling EM waves, with multifunctional applications in the lower-frequency S-band. The metasurface is composed of electronically reconfigurable meta-atoms with wideband characteristics, and designed by using trapezoidal and M-shaped patches connected by a pin diode. Simulation results show that the proposed digital metasurface could achieve wideband 1-bit phase quantization with a stable phase difference within 180 degree +/- 25 degree and small reflection loss below 0.6 dB from 2.72 to 3.25 GHz. To validate the proposed design, a 20x20-unit metasurface array was designed, simulated and fabricated. By dynamically adjusting the coding sequence, the metasurface could enable multi-mode orbital angular momentum (OAM) beam generation, dynamic beam scanning, and precise direction finding. These capabilities support secure sensing and secure communications through high-resolution target detection and anti-jamming beam steering, as well as physical-layer security. The proposed wideband metasurface may serve as an effective candidate for enhancing spectral efficiency and security performance in radar and wireless systems.

eess.SP↗

arXiv2025

Efficient second-harmonic emission via strong modal overlap in single-resonant lithium niobate nanocavity

High-efficiency second-harmonic generation (SHG) in compact integrated photonic systems is crucial for advancing nonlinear optical technologies. However, achieving exceptional conversion efficiencies while maintaining stable performance remains a significant challenge. Here, we report a high-Q single-resonant photonic crystal nanobeam cavity (PCNBC) on a polymer-loaded lithium niobate on insulator (LNOI) platform, which enables bright second-harmonic (SH) emission. Through synergistic optimization of modal confinement and spatial overlap in a y-cut LN architecture, our device achieves a normalized SHG conversion efficiency of 163%/W, outperforming previous LN-based photonic crystal cavities LN-based photonic crystal cavities by over three orders of magnitude. The visible SH emission at 768.77 nm exhibits a single-lobe radiation pattern with precise spectral alignment between fundamental (FH) and second-harmonic (SH) modes, a critical feature for integrated photonic circuits. Remarkably, the conversion efficiency remains stable under thermal variations up to 20°C, addressing a key limitation of multi-resonant systems. High-order cavity modes are directly visualized via CCD imaging, confirming strong spatial overlap. This work establishes a record SHG conversion efficiency for LN microcavities and provides a scalable, temperature-insensitive architecture for nonlinear light sources, with immediate applications in quantum optics and chip-scale interconnects.

physics.optics↗

arXiv2024

Cavity-enhanced acousto-optic modulators on polymer-loaded lithium niobate integrated platform

On chip acousto-optic (AO) modulation represents a significant advancement in the development of highly integrated information processing systems. However, conventional photonic devices face substantial challenges in achieving efficient conversion due to the limited overlap between acoustic waves and optical waves. In this study, we address this limitation by demonstrating an enhanced conversion effect of photonic crystal nanobeam cavities (PCNBCs) in AO modulation on a polymer-loaded lithium niobate integrated platform. Attributed to the high ratio of quality factor (Q) to mode volume (V) and optimal light-sound overlap within the nanocavity, PCNBCs-based AO modulator exhibits a significantly enhanced extinction ratio of 38 dB with a threshold RF power below -50 dBm, which is two orders of magnitude lower than that based on micro-ring resonator (MRRs). In addition, robust digital amplitude shift keying modulations using selected RF and optical channels of the PCNBCs-enhanced AO modulators. These findings validate the compelling properties of the PCNBCs photonic platform, establishing it as a promising candidate for on-chip integrated microwave photonics, optical transceivers, and computing applications.

physics.optics↗

arXiv2024

Microcavity induced by few-layer GaSe crystal on silicon photonic crystal waveguide for efficient optical frequency conversion

We demonstrate the post-induction of high-quality microcavity on silicon photonic crystal (PC) waveguide by integrating few-layer GaSe crystal, which promises highly efficient on-chip optical frequency conversions. The integration of GaSe shifts the dispersion bands of the PC waveguide mode into the bandgap, resulting in localized modes confined by the bare PC waveguides. Thanks to the small contrast of refractive index at the boundaries of microcavity, it is reliably to obtain quality (Q) factors exceeding 10^4. With the enhanced light-GaSe interaction by the microcavity modes and high second-order nonlinearity of GaSe, remarkable second-harmonic generation (SHG) and sum-frequency generation (SFG) are achieved. A record-high on-chip SHG conversion efficiency of 131100% W^-1 is obtained, enabling the clear SHG imaging of the resonant modes with the pump of sub-milliwatts continuous-wave (CW) laser. Driven by a pump of on-resonance CW laser, strong SFGs are successfully carried out with the other pump of a CW laser spanning over the broad telecom-band. Broadband frequency conversion of an incoherent superluminescent light-emitting diode with low spectral power density is also realized in the integrated GaSe-PC waveguide. Our results are expected to provide new strategies for high-efficiency light-matter interactions, nonlinear photonics and light source generation in silicon photonic integrated circuits.

physics.optics↗

arXiv2024

Nonlinear photodetector based on InSe p-n homojunction for improving spatial imaging resolution

We demonstrate an efficient nonlinear photodetector (NLPD) with quadratic response based on a few-layer InSe p-n homojunction, which is beneficial from the strong second harmonic generation (SHG) process in InSe and effective harvest of photocarriers actuated by the high-quality homojunction. The NLPD can sense light with photon energy smaller than InSe electronic bandgap because the SHG process in InSe doubles the frequency of incident light, extending InSe photodetection wavelength range to 1750 nm. The InSe p-n homojunction, which is electrostatically doped by two split back gates, presents a rectification ratio exceeding 106 with a dark current down to 2 pA and a high normalized responsivity of 0.534 A/W2 for the telecom-band pulsed light at 1550 nm. The photocurrents of the SHG-assisted photodetection have a quadratic dependence on the optical powers, making the NLPD highly sensitive to light intensity variation with improved spatial resolution. As examples, the NLPD is employed to precisely determine the localization point of a focused laser beam waist and implement spatial imaging with an improved resolution compared with the linear photodetector. These features highlight the potential of the proposed NLPD in developing advanced optical sensing and imaging systems.

physics.optics↗

arXiv2024

Compact on-chip power splitter based on topological photonic crystal

We propose and demonstrate an on-chip 1*N power splitter based on topological photonic crystal (TPC) on a monolithic silicon photonic platform. Benefiting from the valley-locked propagation mode at the interface of TPCs with different topological phases, the proposed power splitter has negligible backscattering around the sharp bendings and good robustness to fabrication defects, which therefore enable lower insertion loss, better uniformity, and more compact footprint than the conventional designs. For the fabricated 1*2 (8) power splitter, the uniformity among the output ports is below 0.35 (0.65) dB and the maximum insertion loss is 0.38 (0.58) dB with compact footprint of 5*5 um2 (10*12 um2) within a bandwidth of 70 nm. In addition, the topological power splitter only requires simple configurations of TPCs with different topological phases, which is more reliable in design and fabrication compared with the conventional designs.

physics.optics↗

arXiv2023

Approaching the robust linearity in dual-floating van der Waals photodiode

Two-dimensional (2D) material photodetectors have gained great attention as potential elements for optoelectronic applications. However, the linearity of the photoresponse is often compromised by the carrier interaction, even in 2D photodiodes. In this study, we present a new device concept of dual-floating van der Waals heterostructures (vdWHs) photodiode by employing ambipolar MoTe2 and n-type MoS2 2D semiconductors. The presence of type II heterojunctions on both sides of channel layers effectively deplete carriers and restrict the photocarrier trapping within the channel layers. As a result, the device exhibits robust linear photoresponse under photovoltaic mode from the visible (405 nm) to near-infrared (1600 nm) band. With the built-in electric field of the vdWHs, we achieve a linear dynamic range of ~ 100 dB, responsivity of ~ 1.57 A/W, detectivity of ~ 4.28 * 10^11 Jones, and response speed of ~ 30 μs. Our results showcase a promising device concept with excellent linearity towards fast and low-loss detection, high-resolution imaging, and logic optoelectronics.

cond-mat.mes-hall↗

arXiv2023

Self-powered programmable van der Waals photodetectors with nonvolatile semi-floating gate

Tunable photovoltaic photodetectors are of significant relevance in the fields of programmable and neuromorphic optoelectronics. However, their widespread adoption is hindered by intricate architectural design and energy consumption challenges. This study employs a nonvolatile MoTe2/hBN/graphene semi-floating photodetector to address these issues. Programed with pulsed gate voltage, the MoTe2 channel can be reconfigured from an n+-n to a p-n homojunction, and the photocurrent transition changes from negative to positive values. Scanning photocurrent mapping reveals that the negative and positive photocurrents are attributed to Schottky junction and p-n homojunction, respectively. In the p-n configuration, the device demonstrates self-driven, linear, rapid response (~3 ms), and broadband sensitivity (from 405 to 1500 nm) for photodetection, with typical performances of responsivity at ~0.5 A/W and detectivity ~1.6*10^12 Jones under 635 nm illumination. These outstanding photodetection capabilities emphasize the potential of the semi-floating photodetector as a pioneering approach for advancing logical and nonvolatile optoelectronics.

cond-mat.mes-hall↗

arXiv2022

High-responsivity MoS$_2$ hot-electron telecom-band photodetector integrated with microring resonator

We report a high-responsive hot-electron photodetector based on the integration of an Au-MoS$_2$ junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au-MoS$_2$ Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500 nm-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems.

physics.optics↗

arXiv2022

Tunable linearity of high-performance vertical dual-gate vdW phototransistor

Layered two-dimensional (2D) semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic, photothermoelectric, and other effects have been used in phototransistors and photodiodes made with 2D semiconductors or hybrid structures. However, it is difficult to achieve the desired high responsivity and linear photoresponse simultaneously in a monopolar conduction channel or a p-n junction. Here we present dual-channel conduction with ambipolar multilayer WSe2 by employing the device concept of dual-gate phototransistor, where p-type and n-type channels are produced in the same semiconductor using opposite dual-gating. It is possible to tune the photoconductive gain using a vertical electric field, so that the gain is constant with respect to the light intensity-a linear photoresponse, with a high responsivity of ~2.5*10^4 A/W. Additionally, the 1/f noise of the device is kept at a low level under the opposite dual-gating due to the reduction of current and carrier fluctuation, resulting in a high detectivity of ~2*10^13 Jones in the linear photoresponse regime. The linear photoresponse and high performance of our dual-gate WSe2 phototransistor offer the possibility of achieving high-resolution and quantitative light detection with layered 2D semiconductors.

cond-mat.mtrl-sci↗

arXiv2022

Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity

Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metal-semiconductor-metal, suffering from high dark currents and low responsivities at high operation speed. Here, we report a van der Waals PN heterojunction photodetector, composed of p-type black phosphorous and n-type molybdenum telluride, integrated on a silicon nitride waveguide. The built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the responsivity. Under a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous, the dark current is lower than 7 nA, which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus photodetectors. An intrinsic responsivity up to 577 mA/W is obtained. Remarkably, the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection, enabling an increased responsivity of 709 mA/W. Besides, the heterojunction photodetector exhibits a response bandwidth of ~1.0 GHz and a uniform photodetection over a wide spectral range, as experimentally measured from 1500 to 1630 nm. The demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current, high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon, lithium niobate, polymer, etc.

physics.optics↗

arXiv2022

Strong Second Harmonic Generation from Bilayer Graphene with Symmetry Breaking by Redox-Governed Charge Doping

Missing second-order nonlinearity in centrosymmetric graphene overshadows its intriguing optical attribute. Here, we report redox-governed charge doping could effectively break the centrosymmetry of bilayer graphene (BLG), enabling a strong second harmonic generation (SHG) with a strength close to that of the well-known monolayer MoS2. Verified from control experiments with in situ electrical current annealing and electrically gate-controlled SHG, the required centrosymmetry breaking of the emerging SHG arises from the charge-doping on the bottom layer of BLG by the oxygen/water redox couple. Our results not only reveal that charge doping is an effective way to break the inversion symmetry of BLG despite its strong interlayer coupling but also indicate that SHG spectroscopy is a valid technique to probe molecular doping on two-dimensional materials.

physics.optics↗

arXiv2022

Electrically tunable second harmonic generation in atomically thin ReS2

Electrical tuning of second-order nonlinearity in optical materials is attractive to strengthen and expand the functionalities of nonlinear optical technologies, though its implementation remains elusive. Here, we report the electrically tunable second-order nonlinearity in atomically thin ReS2 flakes benefiting from their distorted 1T crystal structure and interlayer charge transfer. Enabled by the efficient electrostatic control of the few-atomic-layer ReS2, we show that second harmonic generation (SHG) can be induced in odd-number-layered ReS2 flakes which are centrosymmetric and thus without intrinsic SHG. Moreover, the SHG can be precisely modulated by the electric field, reversibly switching from almost zero to an amplitude more than one order of magnitude stronger than that of the monolayer MoS2. For the even-number-layered ReS2 flakes with the intrinsic SHG, the external electric field could be leveraged to enhance the SHG. We further perform the first-principles calculations which suggest that the modification of in-plane second-order hyperpolarizability by the redistributed interlayer-transferring charges in the distorted 1T crystal structure underlies the electrically tunable SHG in ReS2. With its active SHG tunability while using the facile electrostatic control, our work may further expand the nonlinear optoelectronic functions of two-dimensional materials for developing electrically controllable nonlinear optoelectronic devices.

physics.optics↗