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Xueyan Wang

Publications and source records attributed to Xueyan Wang.

At least 19 recordsLinked to original sources

HPIM: Heterogeneous Processing-In-Memory-based Accelerator for Large Language Models Inference

The deployment of large language models (LLMs) presents significant challenges due to their enormous memory footprints, low arithmetic intensity, and stringent latency requirements, particularly during the autoregressive decoding stage. Traditional compute-centric accelerators, such as GPUs, suffer from severe resource underutilization and memory bandwidth bottlenecks in these memory-bound workloads. To overcome these fundamental limitations, we propose HPIM, the first memory-centric heterogeneous Processing-In-Memory (PIM) accelerator that integrates SRAM-PIM and HBM-PIM subsystems designed specifically for LLM inference. HPIM employs a software-hardware co-design approach that combines a specialized compiler framework with a heterogeneous hardware architecture. It intelligently partitions workloads based on their characteristics: latency-critical attention operations are mapped to the SRAM-PIM subsystem to exploit its ultra-low latency and high computational flexibility, while weight-intensive GEMV computations are assigned to the HBM-PIM subsystem to leverage its high internal bandwidth and large storage capacity. Furthermore, HPIM introduces a tightly coupled pipeline strategy across SRAM-PIM and HBM-PIM subsystems to maximize intra-token parallelism, thereby significantly mitigating the serial dependency of the autoregressive decoding stage. Comprehensive evaluations using a cycle-accurate simulator demonstrate that HPIM significantly outperforms state-of-the-art accelerators, achieving a peak speedup of up to 23.1x compared to the NVIDIA A100 GPU. Moreover, HPIM exhibits superior performance over contemporary PIM-based accelerators, highlighting its potential as a highly practical and scalable solution for accelerating large-scale LLM inference.

cs.AR

Etching-free dual-lift-off for direct patterning of epitaxial oxide thin films

Although monocrystalline oxide films offer broad functional capabilities, their practical use is hampered by challenges in patterning. Traditional patterning relies on etching, which can be costly and prone to issues like film or substrate damage, under-etching, over-etching, and lateral etching. In this study, we introduce a dual-lift-off method for direct patterning of oxide films, circumventing the etching process and associated issues. Our method involves an initial lift-off of amorphous Sr$_3$Al$_2$O$_6$ or Sr$_4$Al$_2$O$_7$ ($a$SAO) through stripping the photoresist, followed by a subsequent lift-off of the functional oxide thin films by dissolving the $a$SAO layer. $a$SAO functions as a ``high-temperature photoresist", making it compatible with the high-temperature growth of monocrystalline oxides. Using this method, patterned ferromagnetic La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ and ferroelectric BiFeO$_3$ were fabricated, accurately mirroring the shape of the photoresist. Our study presents a straightforward, flexible, precise, environmentally friendly, and cost-effective method for patterning high-quality oxide thin films.

cond-mat.mtrl-sci

Superconducting Diode Effect in Gradiently Strained Nb0.5Ti0.5N Films

The superconducting diode effect (SDE), combining superconductivity with diode-like nonreciprocal current flow, recently emerges as an ideal candidate for zero-dissipation electronic circuits. Such technologically advantageous diodes are achieved by intricate material engineering to disrupt inversion symmetry, which leads to the production challenges as well as a limited pool of viable materials. Here we exploit the gradient interfacial strain to experimentally induce the SDE in Nb0.5Ti0.5N (NTN) films grown on MgO substrates. Additionally, the SDE is tunable with an in-plane magnetic field and can be further enhanced by introducing an interfacial anisotropic pinning potential. Our findings establish interfacial strain gradient as a versatile tool for creating and enhancing tunable SDE.

cond-mat.supr-con

Efficient SRAM-PIM Co-design by Joint Exploration of Value-Level and Bit-Level Sparsity

Processing-in-memory (PIM) is a transformative architectural paradigm designed to overcome the Von Neumann bottleneck. Among PIM architectures, digital SRAM-PIM emerges as a promising solution, offering significant advantages by directly integrating digital logic within the SRAM array. However, rigid crossbar architecture and full array activation pose challenges in efficiently utilizing traditional value-level sparsity. Moreover, neural network models exhibit a high proportion of zero bits within non-zero values, which remain underutilized due to architectural constraints. To overcome these limitations, we present Dyadic Block PIM (DB-PIM), a groundbreaking algorithm-architecture co-design framework to harness both value-level and bit-level sparsity. At the algorithm level, our hybrid-grained pruning technique, combined with a novel sparsity pattern, enables effective sparsity management. Architecturally, DB-PIM incorporates a sparse network and customized digital SRAM-PIM macros, including input pre-processing unit (IPU), dyadic block multiply units (DBMUs), and Canonical Signed Digit (CSD)-based adder trees. It circumvents structured zero values in weights and bypasses unstructured zero bits within non-zero weights and block-wise all-zero bit columns in input features. As a result, the DB-PIM framework skips a majority of unnecessary computations, thereby driving significant gains in computational efficiency. Results demonstrate that our DB-PIM framework achieves up to 8.01x speedup and 85.28% energy savings, significantly boosting computational efficiency in digital SRAM-PIM systems.

cs.AR

Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier

Nonreciprocal electrical transport, characterized by an asymmetric relationship between current and voltage, plays a crucial role in modern electronic industries. Recent studies have extended this phenomenon to superconductors, introducing the concept of the superconducting diode effect (SDE). The SDE is characterized by unequal critical supercurrents along opposite directions. Due to the requirement on broken inversion symmetry, the SDE is commonly accompanied by electrical magnetochiral anisotropy (eMCA) in the resistive state. Achieving a magnetic field-free SDE with field tunability is pivotal for advancements in superconductor devices. Conventionally, the field-free SDE has been achieved in Josephson junctions by intentionally intercalating an asymmetric barrier layer. Alternatively, internal magnetism was employed. Both approaches pose challenges in the selection of superconductors and fabrication processes, thereby impeding the development of SDE. Here, we present a field-free SDE in FeTe0.7Se0.3 (FTS) junction with eMCA, a phenomenon absent in FTS single nanosheets. The field-free property is associated with the presence of a gradient oxide layer on the upper surface of each FTS nanosheet, while the eMCA is linked to spin-splitting arising from the absence of inversion symmetry. Both the SDE and eMCA respond to magnetic fields with distinct temperature dependencies. This work presents a versatile and straightforward strategy for advancing superconducting electronics.

cond-mat.supr-con

Towards Efficient SRAM-PIM Architecture Design by Exploiting Unstructured Bit-Level Sparsity

Bit-level sparsity in neural network models harbors immense untapped potential. Eliminating redundant calculations of randomly distributed zero-bits significantly boosts computational efficiency. Yet, traditional digital SRAM-PIM architecture, limited by rigid crossbar architecture, struggles to effectively exploit this unstructured sparsity. To address this challenge, we propose Dyadic Block PIM (DB-PIM), a groundbreaking algorithm-architecture co-design framework. First, we propose an algorithm coupled with a distinctive sparsity pattern, termed a dyadic block (DB), that preserves the random distribution of non-zero bits to maintain accuracy while restricting the number of these bits in each weight to improve regularity. Architecturally, we develop a custom PIM macro that includes dyadic block multiplication units (DBMUs) and Canonical Signed Digit (CSD)-based adder trees, specifically tailored for Multiply-Accumulate (MAC) operations. An input pre-processing unit (IPU) further refines performance and efficiency by capitalizing on block-wise input sparsity. Results show that our proposed co-design framework achieves a remarkable speedup of up to 7.69x and energy savings of 83.43%.

cs.AR

Giant third-order nonlinear Hall effect in misfit layer compound (SnS)${1.17}$(NbS$_2$)$_3$

Nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall effect (THE), which is governed by an intrinsic band geometric quantity called the Berry Connection Polarizability (BCP) tensor. Here we demonstrate a giant THE in a misfit layer compound, (SnS)${1.17}$(NbS$_2$)$_3$. While the THE is prohibited in individual NbS$_2$ and SnS due to the constraints imposed by the crystal symmetry and their band structures, a remarkable THE emerges when a superlattice is formed by introducing a monolayer of SnS. The angular-dependent THE and its scaling relationship indicate that the phenomenon could be correlated to the band geometry modulation, concurrently with the symmetry breaking. The resulting strength of THE is orders of magnitude higher compared to recent studies. Our work illuminates the modulation of structural and electronic geometries for novel quantum phenomena through interface engineering.

cond-mat.mes-hall

DDC-PIM: Efficient Algorithm/Architecture Co-design for Doubling Data Capacity of SRAM-based Processing-In-Memory

Processing-in-memory (PIM), as a novel computing paradigm, provides significant performance benefits from the aspect of effective data movement reduction. SRAM-based PIM has been demonstrated as one of the most promising candidates due to its endurance and compatibility. However, the integration density of SRAM-based PIM is much lower than other non-volatile memory-based ones, due to its inherent 6T structure for storing a single bit. Within comparable area constraints, SRAM-based PIM exhibits notably lower capacity. Thus, aiming to unleash its capacity potential, we propose DDC-PIM, an efficient algorithm/architecture co-design methodology that effectively doubles the equivalent data capacity. At the algorithmic level, we propose a filter-wise complementary correlation (FCC) algorithm to obtain a bitwise complementary pair. At the architecture level, we exploit the intrinsic cross-coupled structure of 6T SRAM to store the bitwise complementary pair in their complementary states ($Q/\overline{Q}$), thereby maximizing the data capacity of each SRAM cell. The dual-broadcast input structure and reconfigurable unit support both depthwise and pointwise convolution, adhering to the requirements of various neural networks. Evaluation results show that DDC-PIM yields about $2.84\times$ speedup on MobileNetV2 and $2.69\times$ on EfficientNet-B0 with negligible accuracy loss compared with PIM baseline implementation. Compared with state-of-the-art SRAM-based PIM macros, DDC-PIM achieves up to $8.41\times$ and $2.75\times$ improvement in weight density and area efficiency, respectively.

cs.AR

Competition of electronic correlation and reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures

Electronic correlation and reconstruction are two important factors that play a critical role in shaping the magnetic and electronic properties of correlated low-dimensional systems. Here, we report a competition between the electronic correlation and structural reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures by modulating material polarity and interfacial strain, respectively. The heterostructures exhibit a critical thickness (tc) at which a metal-to-insulator transition (MIT) abruptly occurs at certain thickness, accompanied by the coexistence of two- and three-dimensional (2D and 3D) carriers. Intriguingly, the tc exhibits a V-shaped dependence on the doping concentration of Sr, with the smallest tc value at x = 0.5. We attribute this V-shaped dependence to the competition between the electronic reconstruction (modulated by the polarity) and the electronic correlation (modulated by strain), which are borne out by the experimental results, including strain-dependent electronic properties and the evolution of 2D and 3D carriers. Our findings underscore the significance of the interplay between electronic reconstruction and correlation in the realization and utilization of emergent electronic functionalities in low-dimensional correlated systems.

cond-mat.str-el

MP-MVS: Multi-Scale Windows PatchMatch and Planar Prior Multi-View Stereo

Significant strides have been made in enhancing the accuracy of Multi-View Stereo (MVS)-based 3D reconstruction. However, untextured areas with unstable photometric consistency often remain incompletely reconstructed. In this paper, we propose a resilient and effective multi-view stereo approach (MP-MVS). We design a multi-scale windows PatchMatch (mPM) to obtain reliable depth of untextured areas. In contrast with other multi-scale approaches, which is faster and can be easily extended to PatchMatch-based MVS approaches. Subsequently, we improve the existing checkerboard sampling schemes by limiting our sampling to distant regions, which can effectively improve the efficiency of spatial propagation while mitigating outlier generation. Finally, we introduce and improve planar prior assisted PatchMatch of ACMP. Instead of relying on photometric consistency, we utilize geometric consistency information between multi-views to select reliable triangulated vertices. This strategy can obtain a more accurate planar prior model to rectify photometric consistency measurements. Our approach has been tested on the ETH3D High-res multi-view benchmark with several state-of-the-art approaches. The results demonstrate that our approach can reach the state-of-the-art. The associated codes will be accessible at https://github.com/RongxuanTan/MP-MVS.

cs.CV

Phase diagram of superconducting vortex ratchet motion in a superlattice with noncentrosymmetry

Ratchet motion of superconducting vortices, which is a directional flow of vortices in superconductors, is highly useful for exploring quantum phenomena and developing superconducting devices, such as superconducting diode and microwave antenna. However, because of the challenges in the quantitative characterization of the dynamic motion of vortices, a phase diagram of the vortex ratchet motion is still missing, especially in the superconductors with low dimensional structures. Here we establish a quantitative phase diagram of the vortex ratchet motion in a highly anisotropic superlattice superconductor, (SnS)1.17NbS2, using nonreciprocal magnetotransport. The (SnS)1.17NbS2, which possesses a layered atomic structure and noncentrosymmetry, exhibits nonreciprocal magnetotransport in a magnetic field perpendicular and parallel to the plane, which is considered a manifest of ratchet motion of superconducting vortices. We demonstrated that the ratchet motion is responsive to current excitation, magnetic field and thermal perturbation. Furthermore, we extrapolated a giant nonreciprocal coefficient (γ), which quantitatively describes the magnitude of the vortex ratchet motion, and eventually established phase diagrams of the ratchet motion of the vortices with a quantitative description. Last, we propose that the ratchet motion originates from the coexistence of pancake vortices (PVs) and Josephson vortices (JVs). The phase diagrams are desirable for controlling the vortex motion in superlattice superconductors and developing next-generation energy-efficient superconducting devices.

cond-mat.supr-con

Synaptic modulation of conductivity and magnetism in a CoPt-based electrochemical transistor

Among various types of neuromorphic devices towards artificial intelligence, the electrochemical synaptic transistor emerges, in which the channel conductance is modulated by the insertion of ions according to the history of gate voltage across the electrolyte. Despite the striking progress in exploring novel channel materials, few studies report on the ferromagnetic metal-based synaptic transistors, limiting the development of spin-based neuromorphic devices. Here, we present synaptic modulation of both conductivity as well as magnetism based on an electrochemical transistor with a metallic channel of ferromagnetic CoPt alloy. We first demonstrate its essential synaptic functionalities in the transistor, including depression and potentiation of synaptic weight, and paired-pulse facilitation. Then, we show a short- to long-term plasticity transition induced by different gate parameters, such as amplitude, duration, and frequency. Furthermore, the device presents multilevel and reversible nonvolatile states in both conductivity and coercivity. The results demonstrate simultaneous modulation of conductivity and magnetism, paving the way for building future spin-based multifunctional synaptic devices.

physics.app-ph

NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration

The performance and efficiency of running large-scale datasets on traditional computing systems exhibit critical bottlenecks due to the existing "power wall" and "memory wall" problems. To resolve those problems, processing-in-memory (PIM) architectures are developed to bring computation logic in or near memory to alleviate the bandwidth limitations during data transmission. NAND-like spintronics memory (NAND-SPIN) is one kind of promising magnetoresistive random-access memory (MRAM) with low write energy and high integration density, and it can be employed to perform efficient in-memory computation operations. In this work, we propose a NAND-SPIN-based PIM architecture for efficient convolutional neural network (CNN) acceleration. A straightforward data mapping scheme is exploited to improve the parallelism while reducing data movements. Benefiting from the excellent characteristics of NAND-SPIN and in-memory processing architecture, experimental results show that the proposed approach can achieve $\sim$2.6$\times$ speedup and $\sim$1.4$\times$ improvement in energy efficiency over state-of-the-art PIM solutions.

cs.AR

Triangle Counting Accelerations: From Algorithm to In-Memory Computing Architecture

Triangles are the basic substructure of networks and triangle counting (TC) has been a fundamental graph computing problem in numerous fields such as social network analysis. Nevertheless, like other graph computing problems, due to the high memory-computation ratio and random memory access pattern, TC involves a large amount of data transfers thus suffers from the bandwidth bottleneck in the traditional Von-Neumann architecture. To overcome this challenge, in this paper, we propose to accelerate TC with the emerging processing-in-memory (PIM) architecture through an algorithm-architecture co-optimization manner. To enable the efficient in-memory implementations, we come up to reformulate TC with bitwise logic operations (such as AND), and develop customized graph compression and mapping techniques for efficient data flow management. With the emerging computational Spin-Transfer Torque Magnetic RAM (STT-MRAM) array, which is one of the most promising PIM enabling techniques, the device-to-architecture co-simulation results demonstrate that the proposed TC in-memory accelerator outperforms the state-of-the-art GPU and FPGA accelerations by 12.2x and 31.8x, respectively, and achieves a 34x energy efficiency improvement over the FPGA accelerator.

cs.AR

TCIM: Triangle Counting Acceleration With Processing-In-MRAM Architecture

Triangle counting (TC) is a fundamental problem in graph analysis and has found numerous applications, which motivates many TC acceleration solutions in the traditional computing platforms like GPU and FPGA. However, these approaches suffer from the bandwidth bottleneck because TC calculation involves a large amount of data transfers. In this paper, we propose to overcome this challenge by designing a TC accelerator utilizing the emerging processing-in-MRAM (PIM) architecture. The true innovation behind our approach is a novel method to perform TC with bitwise logic operations (such as \texttt{AND}), instead of the traditional approaches such as matrix computations. This enables the efficient in-memory implementations of TC computation, which we demonstrate in this paper with computational Spin-Transfer Torque Magnetic RAM (STT-MRAM) arrays. Furthermore, we develop customized graph slicing and mapping techniques to speed up the computation and reduce the energy consumption. We use a device-to-architecture co-simulation framework to validate our proposed TC accelerator. The results show that our data mapping strategy could reduce $99.99\%$ of the computation and $72\%$ of the memory \texttt{WRITE} operations. Compared with the existing GPU or FPGA accelerators, our in-memory accelerator achieves speedups of $9\times$ and $23.4\times$, respectively, and a $20.6\times$ energy efficiency improvement over the FPGA accelerator.

cs.AR

Hardware Security in Spin-Based Computing-In-Memory: Analysis, Exploits, and Mitigation Techniques

Computing-in-memory (CIM) is proposed to alleviate the processor-memory data transfer bottleneck in traditional Von-Neumann architectures, and spintronics-based magnetic memory has demonstrated many facilitation in implementing CIM paradigm. Since hardware security has become one of the major concerns in circuit designs, this paper, for the first time, investigates spin-based computing-in-memory (SpinCIM) from a security perspective. We focus on two fundamental questions: 1) how the new SpinCIM computing paradigm can be exploited to enhance hardware security? 2) what security concerns has this new SpinCIM computing paradigm incurred?

cs.ET

Hydrogen permeation on defected α-Al2O3 surfaces: DFT calculations

One of the key challenges to realize controlled fusion energy is tritium self-sufficiency. The application of hydrogen permeation barrier (HPB) is considered to be necessary for tritium self-sufficiency. α-Al2O3 is currently a candidate material for HPB. However, a crucial issue for α-Al2O3 is that its permeability reduction factor (PRF) will dramatically drop after ion or neutron irradiations. At present, little is known about the relevant mechanism. In order to shed light on this issue, the kinetics and energetic changes of hydrogen on defected α-Al2O3 surfaces in comparison with perfect α-Al2O3 surfaces were studied by density functional theory. For perfect α-Al2O3 surfaces, the results show that the barrier for hydrogen migration from the outermost layer into the subsurface layer is the highest, making this migration step to be a rate limiting process. In contrast, surface point defects dramatically reduce this maximum barrier. Consequently, hydrogen can preferentially permeate into the interior of the material through surface defects. The findings can help explain the possible mechanism of significant decrease of PRF under radiation.

cond-mat.mtrl-sci

Efficient Computation Reduction in Bayesian Neural Networks Through Feature Decomposition and Memorization

Bayesian method is capable of capturing real world uncertainties/incompleteness and properly addressing the over-fitting issue faced by deep neural networks. In recent years, Bayesian Neural Networks (BNNs) have drawn tremendous attentions of AI researchers and proved to be successful in many applications. However, the required high computation complexity makes BNNs difficult to be deployed in computing systems with limited power budget. In this paper, an efficient BNN inference flow is proposed to reduce the computation cost then is evaluated by means of both software and hardware implementations. A feature decomposition and memorization (\texttt{DM}) strategy is utilized to reform the BNN inference flow in a reduced manner. About half of the computations could be eliminated compared to the traditional approach that has been proved by theoretical analysis and software validations. Subsequently, in order to resolve the hardware resource limitations, a memory-friendly computing framework is further deployed to reduce the memory overhead introduced by \texttt{DM} strategy. Finally, we implement our approach in Verilog and synthesise it with 45 $nm$ FreePDK technology. Hardware simulation results on multi-layer BNNs demonstrate that, when compared with the traditional BNN inference method, it provides an energy consumption reduction of 73\% and a 4$\times$ speedup at the expense of 14\% area overhead.

cs.LG