arXiv subjects

Xueyang Shen

Publications and source records attributed to Xueyang Shen.

4 recordsLinked to original sources

arXiv2026

Low-loss phase-change material based programmable mode converter for photonic computing

Phase-change materials (PCMs)-based integrated photonic memory offers a viable pathway for the development of neuromorphic computing chip. The sizable optical contrast in the telecom band between amorphous and crystalline phases of PCM, in particular, Ge2Sb2Te5 (GST), is used for multilevel programming. However, the high extinction coefficient k of crystalline GST leads to high optical loss, posing a serious challenge for scaling up the device array for practical use. In this work, we focus on the atomic understanding and application of the so-called low-loss PCM, Sb2Se3, through multiscale simulations. First, we elucidate the bonding origin of the wavelength dependent optical properties of amorphous and crystalline Sb2Se3 via ab initio calculations. Given the suppressed k in the telecom band, we design a programable mode converter (PMC) waveguide device that utilizes only the contrast in refractive index n between amorphous and crystalline Sb2Se3 to encode multiple optical levels per waveguide device. The finite-difference time-domain simulations show that a single PMC device can achieve 5-bit programming precision (32 levels) via direct laser writing, and the photonic tensor core formed by the PMC array could possibly be scaled to 128*128. Finally, a thorough comparison between low-loss PCM and conventional PCM is provided.

cond-mat.mtrl-sci↗

arXiv2025

Atomistic understanding of two-dimensional monatomic phase-change material for non-volatile optical applications

Elemental antimony (Sb) is a promising material for phase-change memory, neuromorphic computing and nanophotonic applications, because its compositional simplicity can prevent phase segregation upon extensive programming. Scaling down the film thickness is a necessary step to prolong the lifetime of amorphous Sb, but the optical properties of Sb are also significantly altered as the thickness is reduced to a few nanometers, adding complexity to device optimization. In this work, we aim to provide atomistic understanding of the thickness-dependent optical responses in Sb thin films. As thickness decreases, both the extinction coefficient and optical contrast reduce in the near-infrared spectrum, consistent with previous optical measurements. Such thickness dependence gives rise to a bottom thickness limit of 2 nm in photonic applications, as predicted by coarse-grained device simulations. Further bonding analysis reveals a fundamentally different behavior for amorphous and crystalline Sb upon downscaling, resulting in the reduction of optical contrast. Thin film experiments are also carried out to validate our predictions. The thickness-dependent optical trend is fully demonstrated by our ellipsometric spectroscopy experiments, and the bottom thickness limit of 2 nm is confirmed by structural characterization experiments. Finally, we show that the greatly improved amorphous-phase stability of the 2 nm Sb thin film enables robust and reversible optical switching in a silicon-based waveguide device.

cond-mat.mtrl-sci↗

arXiv2025

Amorphous phase-change memory alloy with no resistance drift

Spontaneous structural relaxation is intrinsic to glassy materials due to their metastable nature. For phase-change materials (PCMs), the resultant temporal change in electrical resistance seriously hamper in-memory computing (IMC) applications. Here, we report an ab-initio-calculation-informed design of amorphous PCM composed of robust "molecule-like" motifs with minimal Peierls distortion, depriving the amorphous alloy of structural ingredients that would gradually evolve upon aging to entail resistance drift. We demonstrate amorphous CrTe3 thin films that display practically no resistance drift at any working temperature from -200 to 165 degree C. We achieve multilevel programming of CrTe3 through both step-wise crystallization and step-wise amorphization using a hybrid opto-electronic device at various temperatures. Moreover, the application potential of CrTe3 in neuromorphic computing is testified by its incorporation in a vehicle with automatic path-tracking function. Our work opens a new avenue to achieving IMC-requisite properties via judicious design of the composition and atomic-level structure of disordered PCM alloys.

cond-mat.mtrl-sci↗

arXiv2025

Role of seed layer in growing atomically flat TiTe2/Sb2Te3 heterostructure thin films at the wafer scale

Chalcogenide phase-change materials (PCMs) are a leading candidate for advanced memory and computing applications. Epitaxial-like growth of chalcogenide thin films at the wafer scale is important to guarantee the homogeneity of the thin film but is challenging with magnetron sputtering, particularly for the growth of phase-change heterostructure (PCH), such as TiTe2/Sb2Te3. In this work, we report how to obtain highly textured TiTe2/Sb2Te3 heterostructure thin films with atomically sharp interfaces on standard silicon substrates. By combining atomic-scale characterization and ab initio simulations, we reveal the critical role of the Sb2Te3 seed layer in forming a continuous Si-Sb-Te mixed transition layer, which provides a wafer-scale flat surface for the subsequent epitaxial-like growth of TiTe2/Sb2Te3 thin film. By gradually reducing the thickness of the seed layer, we determine its critical limit to be ~2 nm. Non-negligible in-plane tensile strain was observed in the TiTe2 slabs due to the lattice mismatch with the adjacent Sb2Te3 ones, suggesting that the chemical interaction across the structural gaps in the heterostructure is stronger than a pure van der Waals interaction. Finally, we outline the potential choices of chalcogenides for atomically flat seed layers on standard silicon substrates, which can be used for wafer-scale synthesis of other high-quality PCM or PCH thin films.

cond-mat.mtrl-sci↗