arXiv subjects
Publications and source records attributed to Xuhui Wang.
We predict theoretically that, when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall conductivity due to the surface scattering and a transverse electric polarization due to the spin-dependent phase shift in the spinor wave functions.
In a ferromagnetic metal layer, the coupled charge and spin diffusion equations are obtained in the presence of both Rashba spin-orbit interaction and magnetism. The mis-alignment between the magnetization and the non-equilibrium spin density induced by the Rashba field gives rise to Rashba spin torque acting on the ferromagnetic order parameter. In a general form, we find that the Rashba torque consists of both in-plane and out-of-plane components, ie $\bm{T}=T_{\bot}\hat{\bm{y}}\times{\hat{\bm m}}+T_{\parallel}{\hat{\bm m}}\times({\hat{\bm y}}\times{\hat{\bm m}})$. Numerical simulations on a two dimensional nano-wire discuss the impact of diffusion on the Rashba torque, which reveals a large enhancement to the ratio $T_{\parallel}/T_{\bot}$ for thin wires. Our theory provides an explanation to the mechanism that drives the magnetization switching in a single ferromagnet as observed in the recent experiments.
In a two-dimensional ferromagnetic metal layer lacking inversion symmetry, the itinerant electrons mediate the interaction between the Rashba spin-orbit interaction and the ferromagnetic order parameter, leading to a Rashba spin torque exerted on the magnetization. Using Keldysh technique, in the presence of both magnetism and a spin-orbit coupling, we derive a spin diffusion equation that provides a coherent description to the diffusive spin dynamics. The characteristics of the spin torque and its implication on magnetization dynamics are discussed in the limits of large and weak spin-orbit coupling.
An extended around mean field (AMF) functional for less localized $p$ electrons is developed to quantify the influence of electronic correlations in $α$-Ga. Both the local density approximation (LDA) and generalized gradient approximation (GGA) are known to mispredict the Ga positional parameters. The extended AMF functional together with an onsite Coulomb interaction of $U_{\rm eff}=1.1$ eV, as obtained from constraint LDA calculations, reduces the deviations by about 20%. The symmetry lowering coming along with the electronic correlations turns out to be in line with the Ga phase diagram.
In spin values the damping parameters of the free layer are determined non-locally by the entire magnetic configuration. In a dual spin valve structure that comprises a free layer embedded between two pinned layers, the spin pumping mechanism, in combination with the angular momentum conservation, renders the tensor-like damping parameters tunable by varying the interfacial and diffusive properties. Simulations based on the Landau-Lifshitz-Gilbert phenomenology for a macrospin model are performed with the tensor-like damping and the relaxation time of the free layer magnetization is found to be largely dependent on while tunable through the magnetic configuration of the source-drain magnetization.
Spin interference due to Rashba spin-orbit interaction (SOI) in a ballistic two-dimensional electron gas (2DEG) ring conductor submitted to a bias voltage is investigated theoretically. We calculate the scattering matrices and differential conductance with lead-ring junction coupling as an adjustable parameter. Due to the interference of electronic waves traversing the ring, the differential conductance modulated by both bias voltage and SOI exhibits a diamond-shaped pattern, thus termed as \ti{Rashba diamond}. This feature offers a supplementary degree of freedom to manipulate phase interference.
In this paper we discuss the relationship between the moving planes of a rational parametric surface and the singular points on it. Firstly, the intersection multiplicity of several planar curves is introduced. Then we derive an equivalent definition for the order of a singular point on a rational parametric surface. Based on the new definition of singularity orders, we derive the relationship between the moving planes of a rational surface and the order of singular points. Especially, the relationship between the $μ$-basis and the order of a singular point is also discussed.
A ferromagnet can resonantly absorbs rf radiation to sustain a steady precession of the magnetization around an internal or applied magnetic field. We show that under these ferromagnetic resonance (FMR) conditions, a dc voltage is generated at a normal-metal electric contact to a ferromagnet with spin-flip scattering. This mechanism allows an easy electric detection of magnetization dyamics.
A "spin-flip transistor" is a lateral spin valve consisting of ferromagnetic source drain contacts to a thin-film normal-metal island with an electrically floating ferromagnetic base contact on top. We analyze the \emph{dc}-current-driven magnetization dynamics of spin-flip transistors in which the source-drain contacts are magnetized perpendicularly to the device plane by magnetoelectronic circuit theory and the macrospin Landau-Lifshitz-Gilbert equation. Spin flip scattering and spin pumping effects are taken into account. We find a steady-state rotation of the base magnetization at GHz frequencies that is tuneable by the source-drain bias. We discuss the advantages of the lateral structure for high-frequency generation and actuation of nanomechanical systems over recently proposed nanopillar structures.
The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane, with source-drain magnetizations chosen fixed and antiparallel, whereas the third contact magnetization is allowed to move in a weak anisotropy field that guarantees thermal stability of the equilibrium structure at room temperature. We analyze the magnetization dynamics of the free layer under a dc source-drain bias current within the macrospin model and magneto-electronic circuit theory. A new tunable two-state behavior of the magnetization is found and the advantages of this phenomenon and potential applications are discussed.