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Xunqing Yin

Publications and source records attributed to Xunqing Yin.

4 recordsLinked to original sources

Ferroelectricity in Atomically Thin Metallic TaNiTe$_5$ with Ultrahigh Carrier Density

Ferroelectric metals, characterized by the coexistence of ferroelectricity and metallic conductivity, present a fundamental challenge due to the screening effect of free charge carriers on the long-range electric dipole order. Existing strategies to circumvent this obstacle include employing two-dimensional (2D) crystals, where reduced dimensionality and low carrier densities suppress screening, or designing materials of van der Waals (vdW) superlattice with spatially separated and decoupled conductive and nearly insulating ferroelectric layers. Here, we report an alternative paradigm in TaNiTe5, where an ultrahigh carrier density coexists with an out-of-plane ferroelectric order within the same surface monolayer. Using piezoresponse force microscopy (PFM), we observed robust ferroelectric behavior in TaNiTe5 down to single-unit-cell thickness (~1.3 nm) at room temperature. Scanning transmission electron microscopy (STEM) gives structural evidence that the ferroelectricity might originate from the vertical displacement of outmost Te atoms on the surface, breaking the inversion symmetry. Concurrently, electrical transport measurements reveal a metallic state with a carrier density on the order of 10$^{15}$ cm$^{-2}$ (or 10$^{22}$ cm$^{-3}$) -- comparable to that of Copper (Cu). Our findings establish a unique platform for exploring the interplay between ferroelectricity and an ultrahigh density of mobile carriers in the 2D limit.

cond-mat.mtrl-sci

Transient dynamics of the phase transition in VO2 revealed by mega electron-volt ultrafast electron diffraction

Vanadium dioxide (VO2) exhibits an insulator-to-metal transition accompanied by a structural transition near room temperature. This transition can be triggered by an ultrafast laser pulse. Exotic transient states, such as a metallic state without structural transition, were also proposed. These unique characteristics let VO2 have great potential in thermal switchable devices and photonic applications. Although great efforts have been made, the atomic pathway during the photoinduced phase transition is still not clear. Here, we synthesized freestanding quasi-single-crystal VO2 films and examined their photoinduced structural phase transition with mega-electron-volt ultrafast electron diffraction. Leveraging the high signal-to-noise ratio and high temporal resolution, we observe that the disappearance of vanadium dimers and zigzag chains does not coincide with the transformation of crystal symmetry. After photoexcitation, the initial structure is strongly modified within 200 femtoseconds, resulting in a transient monoclinic structure without vanadium dimers and zigzag chains. Then, it continues to evolve to the final tetragonal structure in approximately 5 picoseconds. In addition, only one laser fluence threshold instead of two thresholds suggested in polycrystalline samples was observed in our quasi-single-crystal samples. Our findings provide new essential information for a comprehensive understanding of the photoinduced ultrafast phase transition in VO2.

cond-mat.mtrl-sci

Magnetic properties of the quasi two-dimensional centered honeycomb antiferromagnet GdInO$_3$

The crystal structure and magnetic property of the single crystalline hexagonal rare-earth indium oxides GdInO$_3$ have been studied by combing experiments and model calculations. The two inequivalent Gd$^{3+}$ ions form the centered honeycomb lattice, which consists of honeycomb and triangular sublattices. The dc magnetic susceptibility and specific heat measurements suggest two antiferromagnetic phase transitions at $T_\textrm{N1}$ = 2.3 K and $T_\textrm{N2}$ = 1.02 K. An inflection point is observed in the isothermal magnetization curve, which implies an up-up-down phase with a 1/3 magnetization plateau. We also observe a large magnetic entropy change originated from the magnetic frustration in GdInO$_3$. By considering a classical spin Hamiltonian, we establish the ground state phase diagram, which suggests that GdInO$_3$ has a weak easy-axis anisotropy and is close to the equilateral triangular-lattice system. The theoretical ground-state phase diagram may be used as a reference in NMR, ESR, or $μ$SR experiments in future.

cond-mat.str-el

Mn-doping induced ferromagnetism and enhanced superconductivity in Bi_4-x Mn_x O_4 S_3 (0.075 < = x < = 0.15)

We demonstrate that Mn-doping in the layered sulfides Bi_4O_4S_3 leads to stable Bi_4-x Mn_x O_4 S_3 compounds that exhibit both long-range ferromagnetism and enhanced superconductivity for 0.075 < = x < = 0.15, with a possible record superconducting transition temperature (T_c) = 15 K among all BiS_2-based superconductors. We conjecture that the coexistence of superconductivity and ferromagnetism may be attributed to Mn-doping in the spacer Bi2O2 layers away from the superconducting BiS_2 layers, whereas the enhancement of T_c may be due to excess electron transfer to BiS_2 from the Mn4+/Mn3+-substitutions in Bi_2O_2. This notion is empirically corroborated by the increased electron-carrier densities upon Mn doping, and by further studies of the Bi_4-x A_x O_4 S_3 compounds (A = Co, Ni; x = 0.1, 0.125), where the T_c values remain comparable to that of the undoped Bi_4O_4S_3 system (= 4.5 K) due to lack of 4+ valences in either Co or Ni ions for excess electron transfer to the BiS_2 layers. These findings therefore shed new light on feasible pathways to enhance the T_c values of BiS_2-based superconductors.

cond-mat.supr-con