arXiv subjects

Y. -Y. Li

Publications and source records attributed to Y. -Y. Li.

3 recordsLinked to original sources

arXiv2024

The Adams operators on connected graded Hopf algebras

The Adams operators on a Hopf algebra $H$ are the convolution powers of the identity map of $H$. They are also called Hopf powers or Sweedler powers. It is a natural family of operators on $H$ that contains the antipode. We study the linear properties of the Adams operators when $H=\bigoplus_{m\in \mathbb{N}} H_m$ is connected graded. The main result is that for any of such $H$, there exist a PBW type homogeneous basis and a natural total order on it such that the restrictions $Ψ_n|_{H_m}$ of the Adams operators are simultaneously upper triangularizable with respect to this ordered basis. Moreover, the diagonal coefficients are determined in terms of $n$ and a combinatorial number assigned to the basis elements. As an immediate consequence, we obtain a complete description of the characteristic polynomial of $Ψ_n|_{H_m}$, both on eigenvalues and their multiplicities, when $H$ is locally finite and the base field is of characteristic zero. It recovers the main result of the paper [2] by Aguiar and Lauve, where the approach is different from ours.

math.RA↗

arXiv2020

Impact of Charge Trapping on the Energy Resolution of Ge Detectors for Rare-Event Physics Searches

Charge trapping degrades the energy resolution of germanium (Ge) detectors, which require to have increased experimental sensitivity in searching for dark matter and neutrinoless double-beta decay. We investigate the charge trapping processes utilizing nine planar detectors fabricated from USD-grown crystals with well-known net impurity levels. The charge collection efficiency as a function of charge trapping length is derived from the Shockley-Ramo theorem. Furthermore, we develop a model that correlates the energy resolution with the charge collection efficiency. This model is then applied to the experimental data. As a result, charge collection efficiency and charge trapping length are determined accordingly. Utilizing the Lax model (further developed by CDMS collaborators), the absolute impurity levels are determined for nine detectors. The knowledge of these parameters when combined with other traits such as the Fano factor serve as a reliable indicator of the intrinsic nature of charge trapping within the crystals. We demonstrate that electron trapping is more severe than hole trapping in a p-type detector and the charge collection efficiency depends on the absolute impurity level of the Ge crystal when an adequate bias voltage is applied to the detector. Negligible charge trapping is found when the absolute impurity level is less than 1.0$\times$10$^{11}/$cm$^{3}$ for collecting electrons and 2.0$\times$10$^{11}/$cm$^{3}$ for collecting holes.

physics.ins-det↗

arXiv2017

Direct Detection of MeV-Scale Dark Matter Utilizing Germanium Internal Amplification for the Charge Created by the Ionization of Impurities

Light, MeV-scale dark matter (DM) is an exciting DM candidate that is undetectable by current experiments. A germanium (Ge) detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a promising new technology with experimental sensitivity for detecting MeV-scale DM. We analyze the physics mechanisms of the signal formation, charge creation, charge internal amplification, and the projected sensitivity for directly detecting MeV-scale DM particles. We present a design for a novel Ge detector at helium temperature ($\sim$4 K) enabling ionization of impurities from DM impacts. With large localized E-fields, the ionized excitations can be accelerated to kinetic energies larger than the Ge bandgap at which point they can create additional electron-hole pairs, producing intrinsic amplification to achieve an ultra-low energy threshold of $\sim$0.1 eV for detecting low-mass DM particles in the MeV scale. Correspondingly, such a Ge detector with 1 kg-year exposure will have high sensitivity to a DM-nucleon cross section of $\sim$5$\times$10$^{-45}$ cm$^{2}$ at a DM mass of $\sim$10 MeV/c$^{2}$ and a DM-electron cross section of $\sim$5$\times$10$^{-46}$cm$^{2}$ at a DM mass of $\sim$1 MeV/c$^2$.

physics.ins-det↗