arXiv subjects

Y. B. Zhang

Publications and source records attributed to Y. B. Zhang.

6 recordsLinked to original sources

arXiv2020

Spin-valley locking, bulk quantum Hall effect and chiral surface state in a noncentrosymmetric Dirac semimetal BaMnSb$_2$

Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently coupled for both valence and conduction bands in this material. This is revealed by comprehensive studies using first principle calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy and quantum transport measurements. Moreover, this material also exhibits a stacked quantum Hall effect. The spin-valley degeneracy extracted from the plateau height of quantized Hall resistivity is close to 2. This result, together with the observed Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we have also observed a two-dimensional chiral metal at the side surface, which represents a novel topological quantum liquid. These findings establish BaMnSb$_2$ as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states.

cond-mat.mtrl-sci↗

arXiv2016

Tuning phase transitions of FeSe thin flakes by field effect transistor with solid ion conductor as gate dielectric

We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control the material properties and its phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with $T_c$ $\sim$ 46.6 K for the optimal doping, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, using solid ion conductor as a gate dielectric, the SIC-FET device can achieve much higher carrier doping in the bulk, and suit many surface sensitive experimental probes, and can stabilize novel structural phases that are inaccessible in ordinary conditions.

cond-mat.supr-con↗

arXiv2015

Pressure-induced Lifshitz transition in black phosphorus

In a semimetal, both electron and hole carriers contribute to the density of states at the Fermi level. The small band overlaps and multi-band effects give rise to many novel electronic properties, such as relativistic Dirac fermions with linear dispersion, titanic magnetoresistance and unconventional superconductivity. Black phosphorus has recently emerged as an exceptional semiconductor with high carrier mobility and a direct, tunable bandgap. Of particular importance is the search for exotic electronic states in black phosphorus, which may amplify the material's potential beyond semiconductor devices. Here we show that a moderate hydrostatic pressure effectively suppresses the band gap and induces a Lifshitz transition from semiconductor to semimetal in black phosphorus; a colossal magnetoresistance is observed in the semimetallic phase. Quantum oscillations in high magnetic field reveal the complex Fermi surface topology of the semimetallic black phosphorus. In particular, a Dirac-like fermion emerges at around 1.2 GPa, which is continuously tuned by external pressure. The observed semi-metallic behavior greatly enriches black phosphorus's material property, and sets the stage for the exploration of novel electronic states in this material. Moreover, these interesting behaviors make phosphorene a good candidate for the realization of a new two-dimensional relativistic electron system, other than graphene.

cond-mat.mtrl-sci↗

arXiv2010

Intrinsic Ferromagnetism in Eu doped ZnO

We report room temperature ferromagnetism in as-implanted Eu doped ZnO (ZnO:Eu). To address the origin of ferromagnetism ab initio calculations of ZnO:Eu system are performed. Results show that the ferromagnetism is induced by ZnO point defects as Eu ions in perfect ZnO tend to align antiferromagnetically.

cond-mat.mtrl-sci↗

arXiv1999

Macroscopic quantum coherence in mesoscopic ferromagnetic systems

In this paper we study the Macroscopic Quantum Oscillation (MQO) effect in ferromagnetic single domain magnets with a magnetic field applied along the hard anistropy axis. The level splitting for the ground state, derived with the conventional instanton method, oscillates with the external field and is quenched at some field values. A formula for quantum tunneling at excited levels is also obtained. The existence of topological phase accounts for this kind of oscillation and the corresponding thermodynamical quantities exhibit similar interference effects which resembles to some extent the electron quantum phase interference induced by gauge potential in the Aharonov-Bohm effect and the $Θ$-vacuum in Yang-Mills field theory..

cond-mat.mes-hall↗

arXiv1999

Crossover from thermal hopping to quantum tunneling in Mn_{12}Ac

The crossover from thermal hopping to quantum tunneling is studied. We show that the decay rate $Γ$ with dissipation can accurately be determined near the crossover temperature. Besides considering the Wentzel-Kramers-Brillouin (WKB) exponent, we also calculate contribution of the fluctuation modes around the saddle point and give an extended account of a previous study of crossover region. We deal with two dangerous fluctuation modes whose contribution can't be calculated by the steepest descent method and show that higher order couplings between the two dangerous modes need to be taken into considerations. At last the crossover from thermal hopping to quantum tunneling in the molecular magnet Mn_{12}Ac is studied.

cond-mat.mes-hall↗