arXiv subjects

Y. Chuang

Publications and source records attributed to Y. Chuang.

4 recordsLinked to original sources

arXiv2021

Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing a top and a bottom gate, allowing the investigation of quantum wells at both imbalanced and matched densities. Integer quantum Hall states at total filling factor $ν_{\text{T}} = 1$ and $ν_{\text{T}} = 2$ are observed in both density regimes, and the evolution of their excitation gaps is reported as a function of density. The $ν_{\text{T}} = 1$ gap evolution departs from the behavior generally observed for valley splitting in the single layer regime. Furthermore, by comparing the $ν_{\text{T}} = 2$ gap to the single particle tunneling energy, $Δ_{\text{SAS}}$, obtained from Schrödinger-Poisson (SP) simulations, evidence for the onset of spontaneous inter-layer coherence (SIC) is observed for a relative filling fraction imbalance smaller than ${\sim}50\%$

cond-mat.mes-hall↗

arXiv2017

Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices

As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure and elastic state, we use a T $\leq 800^\circ$C process to prepare clean Si$_{0.86}$Ge$_{0.14}$ surfaces suitable for atomic-precision fabrication. P-saturated atomic-layer doping is incorporated and capped with epitaxial Si under a thermal budget compatible with atomic-precision fabrication. Hall measurements at T$=0.3$ K show that the doped heterostructure has R$_{\square}=570\pm30$ $Ω$, yielding an electron density $n_{e}=2.1\pm0.1\times10^{14}$cm$^{-2}$ and mobility $μ_e=52\pm3$ cm$^{2}$ V$^{-1}$ s$^{-1}$, similar to saturated atomic-layer doping in pure Si and Ge. The magnitude of $μ_e$ and the complete absence of Shubnikov-de Haas oscillations in magnetotransport measurements indicate that electrons are overwhelmingly localized in the donor layer, and not within a nearby buried Si well. This conclusion is supported by self-consistent Schrödinger-Poisson calculations that predict electron occupation primarily in the donor layer.

cond-mat.mtrl-sci↗

arXiv2017

Effective g factor of low-density two-dimensional holes in a Ge quantum well

We report measurements of the effective $g$ factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective $g$ factor in a magnetic field perpendicular to the sample surface. Very large values of the effective $g$ factor, ranging from $\sim13$ to $\sim28$, are observed in the density range of $1.4\times10^{10}$ cm$^{-2}$ to $1.4\times10^{11}$ cm$^{-2}$. When the magnetic field is oriented parallel to the sample surface, the effective $g$ factor is obtained from a protrusion in the magneto-resistance data that signifies full spin polarization. In the latter orientation, a small effective $g$ factor, $\sim1.3-1.4$, is measured in the density range of $1.5\times10^{10}$ cm$^{-2}$ to $2\times10^{10}$ cm$^{-2}$. This very strong anisotropy is consistent with theoretical predictions and previous measurements in other 2D hole systems, such as InGaAs and GaSb.

cond-mat.mes-hall↗

arXiv2017

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system

Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices can be induced by gate control. We report here a gate-controlled quantum Hall ferromagnetic transition between two real spin states in a conventional two-dimensional system without any in-plane magnetic field. We show that the ratio of the Zeeman splitting to the cyclotron gap in a Ge two-dimensional hole system increases with decreasing density owing to inter-carrier interactions. Below a critical density of $\sim2.4\times 10^{10}$ cm$^{-2}$, this ratio grows greater than $1$, resulting in a ferromagnetic ground state at filling factor $ν=2$. At the critical density, a resistance peak due to the formation of microscopic domains of opposite spin orientations is observed. Such gate-controlled spin-polarizations in the quantum Hall regime opens the door to realizing Majorana modes using two-dimensional systems in conventional, low-spin-orbit-coupling semiconductors.

cond-mat.mes-hall↗