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Y. Dagan

Publications and source records attributed to Y. Dagan.

50 records · Page 3Linked to original sources

Hole superconductivity in the electron-doped superconductor PCCO

We measure the resistivity and Hall angle of the electron-doped superconductor Pr_{2-x}Ce_xCuO_4 as a function of doping and temperature. The resistivity Rho_xx at temperatures 100K < T < 300K is mostly sensitive to the electrons. Its temperature behavior is doping independent over a wide doping range and even for non superconducting samples. On the other hand,the transverse resistivity rho_xy, or the Hall angle theta_H where cot(theta_H) = rho_xx/rho_xy, is sensitive to both holes and electrons. Its temperature dependence is strongly influenced by doping, and cot(theta_H) can be used to identify optimum doping (the maximum Tc) even well above the critical temperature. These results lead to a conclusion that in electron doped cuprates holes are responsible for the superconductivity.

cond-mat.supr-con↗

Dirty Superconductivity in the Electron-Doped Cuprate PCCO: a Tunneling Study

We report a tunneling study between Pr_2-xCe_xCuO_{4-delta} (PCCO) and Lead as a function of doping, temperature and magnetic field. The temperature dependence of the gap follows the BCS prediction. Our data fits a nonmonotonic d-wave order parameter for the whole doping range studied. From our data we are able to conclude that the electron-doped cuprate PCCO is a weak coupling, BCS, dirty superconductor.

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Role of oxygen in the electron-doped superconducting cuprates

We report on resistivity and Hall measurements in thin films of the electron-doped superconducting cuprate Pr$_{2-x}$Ce$_{x}$CuO$_{4\pmδ}$. Comparisons between x = 0.17 samples subjected to either ion-irradiation or oxygenation demonstrate that changing the oxygen content has two separable effects: 1) a doping effect similar to that of cerium, and 2) a disorder effect. These results are consistent with prior speculations that apical oxygen removal is necessary to achieve superconductivity in this compound.

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Remarkable change of tunneling conductance in YBCO films in fields up to 32.4T

We studied the tunneling density of states in YBCO films under strong currents flowing along node directions. The currents were induced by fields of up to 32.4T parallel to the film surface and perpendicular to the $CuO_{2}$ planes. We observed a remarkable change in the tunneling conductance at high fields where the gap-like feature shifts discontinuously from 15meV to a lower bias of 11meV, becoming more pronounced as the field increases. The effect takes place in increasing fields around 9T and the transition back to the initial state occurs around 5T in decreasing fields. We argue that this transition is driven by surface currents induced by the applied magnetic field.

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Tunneling into the normal state of Pr(2-x)CexCuO4

The temperature dependence of the tunneling conductance was measured for various doping levels of Pr(2-x)CexCuO4 using planar junctions. A normal state gap is seen at all doping levels studied, x=0.11 to x=0.19. We find it to vanish above a certain temperature T*. T* is greater than Tc for the underdoped region and it follows Tc on the overdoped side. This behavior suggests finite pairing amplitude above Tc on the underdoped side.

cond-mat.supr-con↗

Evidence for a quantum phase transition in the electron-doped cuprate Pr2-xCexCuO4+d from Hall and resistivity measurements

The doping and temperature dependence of the Hall coefficient, RH, and ab-plane resistivity in the normal state down to 350mK is reported for oriented films of the electron-doped high-Tc superconductor Pr2-xCexCuO4+d. The doping dependence of b (r=r0+AT^b) and R_sub_H (at 350 mK) suggest a quantum phase transition at a critical doping near x=0.165.

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Origin of the anomalous low temperature upturn in resistivity in the electron-doped cuprates

The temperature, doping and field dependences of the magnetoresistance (MR) in Pr_(2-x)Ce_(x)CuO_(4-delta) films are reported. We distinguish between orbital MR, found when the magnetic field is applied perpendicular to the ab planes, and the nearly isotropic spin MR. The latter, the major MR effect in the superconducting samples, appears in the region of the doping-temperature phase diagram where d(rho)/dT<0, or an upturn in the resistivity appears. We conclude that the upturn originates from spin scattering processes.

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Infrared Properties of Electron Doped Cuprates: Tracking Normal State Gaps and Quantum Critical Behavior in Pr(2-x)Ce(x)CuO(4)

We report the temperature dependence of the infrared-visible conductivity of Pr(2-x)Ce(x)CuO(4) thin films. When varying the doping from a non-superconducting film (x = 0.11) to a superconducting overdoped film (x = 0.17), we observe, up to optimal doping (x = 0.15), a partial gap opening. A model combining a spin density wave gap and a frequency and temperature dependent self energy reproduces our data reasonably well. The magnitude of this gap extrapolates to zero for x ~ 0.17 indicating the coexistence of magnetism and superconductivity in this material and the existence of a quantum critical point at this Ce concentration.

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Infrared Signature of the Superconducting State in Pr(2-x)Ce(x)CuO(4)

We measured the far infrared reflectivity of two superconducting Pr(2-x)Ce(x)CuO(4) films above and below Tc. The reflectivity in the superconducting state increases and the optical conductivity drops at low energies, in agreement with the opening of a (possibly) anisotropic superconducting gap. The maximum energy of the gap scales roughly with Tc as 2 Delta_{max} / kB Tc ~ 4.7. We determined absolute values of the penetration depth at 5 K as lambda_{ab} = (3300 +/- 700) A for x = 0.15 and lambda_{ab} = (2000 +/- 300) A for x = 0.17. A spectral weight analysis shows that the Ferrell-Glover-Tinkham sum rule is satisfied at conventional low energy scales \~ 4 Delta_{max}.

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Point contact spectroscopy of the electron-doped cuprate superconductor Pr{2-x}Ce{x}CuO4: The dependence of conductance-voltage spectra on cerium doping, barrier strength and magnetic field

We present conductance-voltage (G-V) data for point contact junctions between a normal metal and the electron doped cuprate superconductor Pr{2-x}Ce{x}CuO4 (PCCO). We observe a zero bias conductance peak (ZBCP) for the under-doped composition of this cuprate (x=0.13) which is consistent with d-wave pairing symmetry. For optimally-doped (x=0.15) and over-doped (x=0.17) PCCO, we find that the G-V characteristics indicate the presence of an order parameter without nodes. We investigate this further by obtaining point contact spectroscopy data for different barrier strengths and as a function of magnetic field.

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Order parameter node removal in the d-wave superconductor $YBa_{2}Cu_{3}O_{7-x}$ under magnetic field

hether the node in the order parameter characteristic of a $d-wave$ superconductor can or cannot be removed by an applied magnetic field has been a subject of debate in recent years. Thermal conductivity results on the high Tc superconductor $Bi_{2}Sr_{2}CaCu_{2}O_{8}$ originally explained by Laughlin in terms of such a node removal were complicated by hysteresis effects, and judged inconclusive. We present new tunneling data on $YBa_{2}Cu_{3}O_{7-x}$ that support the existence of the node removal effect, under specific orientations of the sample's surfaces and magnetic field. We also explain the hysteretic behavior and other previous tunneling results so far not understood satisfactorily, attributing them to a combination of node removal and Doppler shift of low energy surface bound states.

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Local and macroscopic tunneling spectroscopy of Y(1-x)CaxBa2Cu3O(7-d) films: evidence for a doping dependent is or idxy component in the order parameter

Tunneling spectroscopy of epitaxial (110) Y1-xCaxBa2Cu3O7-d films reveals a doping dependent transition from pure d(x2-y2) to d(x2-y2)+is or d(x2-y2)+idxy order parameter. The subdominant (is or idxy) component manifests itself in a splitting of the zero bias conductance peak and the appearance of subgap structures. The splitting is seen in the overdoped samples, increases systematically with doping, and is found to be an inherent property of the overdoped films. It was observed in both local tunnel junctions, using scanning tunneling microscopy (STM), and in macroscopic planar junctions, for films prepared by either RF sputtering or laser ablation. The STM measurements exhibit fairly uniform splitting size in [110] oriented areas on the order of 10 nm2 but vary from area to area, indicating some doping inhomogeneity. U and V-shaped gaps were also observed, with good correspondence to the local faceting, a manifestation of the dominant d-wave order parameter.

cond-mat.supr-con↗

Localization by disorder in the infrared conductivity of (Y,Pr)Ba2Cu3O7 films

The ab-plane reflectivity of (Y{1-x}Prx)Ba2Cu3O7 thin films was measured in the 30-30000 cm-1 range for samples with x = 0 (Tc = 90 K), x = 0.4 (Tc = 35 K) and x = 0.5 (Tc = 19 K) as a function of temperature in the normal state. The effective charge density obtained from the integrated spectral weight decreases with increasing x. The variation is consistent with the higher dc resistivity for x = 0.4, but is one order of magnitude smaller than what would be expected for x = 0.5. In the latter sample, the conductivity is dominated at all temperatures by a large localization peak. Its magnitude increases as the temperature decreases. We relate this peak to the dc resistivity enhancement. A simple localization-by-disorder model accounts for the optical conductivity of the x = 0.5 sample.

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Thickness independence of field induced time reversal symmetry breaking in Y/sub1 Ba/sub2 Cu/sub3 O/sub7-delta thin films

We have measured the field dependence of the Zero Bias Conductance Peak (ZBCP) of tunnel junctions prepared on (110) oriented Y1Ba2Cu3O7-d films of various thickness. We have found that the field splitting of the ZBCP, believed to be due to the Time Reversal Symmetry Breaking (TRSB) of Andreev surface bound states, is independent of film thickness. This rules out that Meissner screening currents are at the origin of TRSB. We conclude that TRSB must, instead, be due to a field-induced modification of the Order parameter. Different possibilities involving an imaginary component are discussed.

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