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Y. G. Wei

Publications and source records attributed to Y. G. Wei.

4 recordsLinked to original sources

Modelling Electron Spin Accumulation in a Metallic Nanoparticle

A model describing spin-polarized current via discrete energy levels of a metallic nanoparticle, which has strongly asymmetric tunnel contacts to two ferromagnetic leads, is presented. In absence of spin-relaxation, the model leads to a spin-accumulation in the nanoparticle, a difference ($Δμ$) between the chemical potentials of spin-up and spin-down electrons, proportional to the current and the Julliere's tunnel magnetoresistance. Taking into account an energy dependent spin-relaxation rate $Ω(ω)$, $Δμ$ as a function of bias voltage ($V$) exhibits a crossover from linear to a much weaker dependence, when $|e|Ω(Δμ)$ equals the spin-polarized current through the nanoparticle. Assuming that the spin-relaxation takes place via electron-phonon emission and Elliot-Yafet mechanism, the model leads to a crossover from linear to $V^{1/5}$ dependence. The crossover explains recent measurements of the saturation of the spin-polarized current with $V$ in Aluminum nanoparticles, and leads to the spin-relaxation rate of $\approx 1.6 MHz$ in an Aluminum nanoparticle of diameter $6nm$, for a transition with an energy difference of one level spacing.

cond-mat.mes-hall

Saturation of Spin-Polarized Current in Nanometer Scale Aluminum Grains

We describe measurements of spin-polarized tunnelling via discrete energy levels of single Aluminum grains. In high resistance samples ($\sim GΩ$), the spin-polarized tunnelling current rapidly saturates as a function of the bias voltage. This indicates that spin-polarized current is carried only via the ground state and the few lowest in energy excited states of the grain. At the saturation voltage, the spin-relaxation rate $T_1^{-1}$ of the highest excited states is comparable to the electron tunnelling rate: $T_1^{-1}\approx 1.5\cdot 10^6 s^{-1}$ and $10^7s^{-1}$ in two samples. The ratio of $T_1^{-1}$ to the electron-phonon relaxation rate is in agreement with the Elliot-Yafet scaling, an evidence that spin-relaxation in Al grains is governed by the spin-orbit interaction.

cond-mat.mes-hall

Mesoscopic Resistance Fluctuations in Cobalt Nanoparticles

We present measurements of mesoscopic resistance fluctuations in cobalt nanoparticles and study how the fluctuations with bias voltage, bias fingerprints, respond to magnetization reversal processes. Bias fingerprints rearrange when domains are nucleated or annihilated. The domain-wall causes an electron wavefunction phase-shift of $\approx 5π$. The phase-shift is not caused by the Aharonov-Bohm effect; we explain how it arises from the mistracking effect, where electron spins lag in orientation with respect to the moments inside the domain-wall. Dephasing time in Co at $0.03K$ is short, $τ_ϕ\sim ps$, which we attribute to the strong magnetocrystalline anisotropy.

cond-mat.mes-hall

Spin-Polarized Electron Transport through Nanometer-Scale Al Grains

We investigate spin-polarized electron tunnelling through ensembles of nanometer scale Al grains embedded between two Co-reservoirs at 4.2K, and observe tunnelling-magnetoresistance (TMR) and effects from spin-precession in the perpendicular applied magnetic field (the Hanle effect). The spin-coherence time ($T_2^\star$) measured using the Hanle effect is of order $ns$. The dephasing is attributed to electron spin-precession in local magnetic fields. Dephasing process does not destroy $TMR$, which is strongly asymmetric with bias voltage. The asymmetric TMR is explained by spin relaxation in Al grains and asymmetric electron dwell times.

cond-mat.mes-hall