arXiv subjects

Y. Ju

Publications and source records attributed to Y. Ju.

5 recordsLinked to original sources

arXiv2015

LUX-ZEPLIN (LZ) Conceptual Design Report

The design and performance of the LUX-ZEPLIN (LZ) detector is described as of March 2015 in this Conceptual Design Report. LZ is a second-generation dark-matter detector with the potential for unprecedented sensitivity to weakly interacting massive particles (WIMPs) of masses from a few GeV/c2 to hundreds of TeV/c2. With total liquid xenon mass of about 10 tonnes, LZ will be the most sensitive experiment for WIMPs in this mass region by the end of the decade. This report describes in detail the design of the LZ technical systems. Expected backgrounds are quantified and the performance of the experiment is presented. The LZ detector will be located at the Sanford Underground Research Facility in South Dakota. The organization of the LZ Project and a summary of the expected cost and current schedule are given.

physics.ins-det↗

arXiv2008

A Nanostructual Microwave Probe Used for Atomic Force Microscope

In order to develop a new structure microwave probe, the fabrication of AFM probe on the GaAs wafer was studied. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe. A tip having 8 micrometers high, and curvature radius about 50 nm was formed. The dimensions of the cantilever are 250x30x15 micrometers. The open structure of the waveguide at the tip of the probe was introduced by using FIB fabrication. AFM topography of a grating sample was measured by using the fabricated GaAs microwave probe. The fabricated probe was found having nanometer scale resolution, and microwave emission was detected successfully at the tip of the probe by approaching Cr-V steel and Au wire samples.

cs.OH↗

arXiv2008

Development of a Nanostructual Microwave Probe Based on GaAs

With the development of nanotechnology, the measurement of electrical properties in local area of materials and devices has become a great need. Although a lot kind of scanning probe microscope have been developed for satisfying the requirement of nanotechnology, a microscope technique which can determine electrical properties in local area of materials and devices is not yet developed. Recently, microwave microscope has been an interest to many researchers, due to its potential in the evaluation of electrical properties of materials and devices. The advance of microwave is that the response of materials is directly relative to the electromagnetic properties of materials. However, because of the problem of the structure of probes, nanometer-scale resolution has not been successful. To achieve the goal, a new structure microwave probe is required. In this paper, we report a nanostructural microwave probe. To restrain the attenuation of microwave in the probe, GaAs was used as the substrate of the probe. To obtain the desired structure, wet etching was used to fabricate the probe. Different with the dry etching, a side-etching will occur under the etching mask. Utilizing this property, a micro tip can be fabricated by etching a wafer, of which a small mask was introduced on the surface in advance.

cs.OH↗

arXiv2006

Gas Purity effect on GEM Performance in He and Ne at Low Temperatures

The performance of Gas Electron Multipliers (GEMs) in gaseous He, Ne, He+H2 and Ne+H2 was studied at temperatures in the range of 3-293 K. This paper reports on previously published measurements and additional studies on the effects of the purity of the gases in which the GEM performance is evaluated. In He, at temperatures between 77 and 293 K, triple-GEM structures operate at rather high gains, exceeding 1000. There is an indication that this high gain is achieved through the Penning effect as a result of impurities in the gas. At lower temperatures the gain-voltage characteristics are significantly modified probably due to the freeze-out of these impurities. Double-GEM and single-GEM structures can operate down to 3 K at gains reaching only several tens at a gas density of about 0.5 g/l; at higher densities the maximum gain drops further. In Ne, the maximum gain also drops at cryogenic temperatures. The gain drop in Ne at low temperatures can be re-established in Penning mixtures of Ne+H2: very high gains, exceeding 104, have been obtained in these mixtures at 30-77 K, at a density of 9.2 g/l which corresponds to saturated Ne vapor density at 27 K. The addition of small amounts of H2 in He also re-establishes large GEM gains above 30 K but no gain was observed in He+H2 at 4 K and a density of 1.7 g/l (corresponding to roughly one-tenth of the saturated vapor density). These studies are, in part, being pursued in the development of two-phase He and Ne detectors for solar neutrino detection.

physics.ins-det↗

arXiv2005

GEM operation in helium and neon at low temperatures

We study the performance of Gas Electron Multipliers (GEMs) in gaseous He, Ne and Ne+H2 at temperatures in the range of 2.6-293 K. In He, at temperatures between 62 and 293 K, the triple-GEM structures often operate at rather high gains, exceeding 1000. There is an indication that this high gain is achieved by Penning effect in the gas impurities released by outgassing. At lower temperatures the gain-voltage characteristics are significantly modified probably due to the freeze-out of impurities. In particular, the double-GEM and single-GEM structures can operate down to 2.6 K at gains reaching only several tens at a gas density of about 0.5 g/l; at higher densities the maximum gain drops further. In Ne, the maximum gain also drops at cryogenic temperatures. The gain drop in Ne at low temperatures can be reestablished in Penning mixtures of Ne+H2: very high gains, exceeding 10000, have been obtained in these mixtures at 50-60 K, at a density of 9.2 g/l corresponding to that of saturated Ne vapor near 27 K. The results obtained are relevant in the fields of two-phase He and Ne detectors for solar neutrino detection and electron avalanching at low temperatures.

physics.ins-det↗