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Y. Kishi

Publications and source records attributed to Y. Kishi.

3 recordsLinked to original sources

Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier

We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output signals which originate from the spin accumulation in a Si channel at low temperatures.

cond-mat.mes-hall

Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe$_{3}$Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 $^circ$C, we realize epitaxial growth of ferromagnetic Fe$_{3}$Si layers on Si (111) with keeping an abrupt interface, and the grown Fe$_{3}$Si layer has the ordered $DO_{3}$ phase. Measurements of magnetic and electrical properties for the Fe$_{3}$Si/Si(111) yield a magnetic moment of ~ 3.16 $mu_{B}$/f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ~ 1.08, respectively.

cond-mat.mtrl-sci

Search for the Decay K+ -> pi+ pi0 nu nubar

The first search for the decay K^+ -> pi^+ pi^0 nu nubar has been performed with the E787 detector at BNL. Based on zero events observed in the kinematical search region defined by 90 MeV/c < P_{pi^+} < 188 MeV/c and 135 MeV < E_{pi^0} < 180 MeV, an upper limit B(K^+ -> pi^+ pi^0 nu nubar) < 4.3 x 10^{-5} at 90% confidence level is established.

hep-ex